DE2342298A1 - Multiple light emitting diode (LED) with increased luminance - consists of several LEDs integrated in common semiconductor body - Google Patents
Multiple light emitting diode (LED) with increased luminance - consists of several LEDs integrated in common semiconductor bodyInfo
- Publication number
- DE2342298A1 DE2342298A1 DE19732342298 DE2342298A DE2342298A1 DE 2342298 A1 DE2342298 A1 DE 2342298A1 DE 19732342298 DE19732342298 DE 19732342298 DE 2342298 A DE2342298 A DE 2342298A DE 2342298 A1 DE2342298 A1 DE 2342298A1
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- emitting diode
- semiconductor body
- multiple light
- increased luminance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Abstract
Description
Li c en ti a Patent-^ervaltungs-GtnbHLi c en ti a Patent- ^ ervaltungs-GtnbH
6 Krankfurt/Main, Theodor-Stern-Kni 16 Krankfurt / Main, Theodor-Stern-Kni 1
Ileilbronn, den l6. August 1973 PT-La/sr - HN 73/3'*Ileilbronn, the 16. August 1973 PT-La / sr - HN 73/3 '*
Mehrf ach-LeuchtdiodeMultiple light-emitting diode
Die Erfindung bezieht sich auf eine Mehrfach-Leuchtdiode mit erhöhter Lichtausbeute und Versorgungsspannung«The invention relates to a multiple light emitting diode with increased light output and supply voltage «
Der Einsatz von Leuchtdioden als Signallampen anstelle von Glüh- oder Glimmlampen ist wegen der unterschiedlich großen Versorgungsspannungen und wegen der oft nicht ausreichenden Helligkeit von Leuchtdioden meist nicht möglich.The use of light emitting diodes as signal lamps instead of incandescent or glow lamps is due to the different sizes Supply voltages and because of the often insufficient brightness of light-emitting diodes mostly not possible.
Die normale Betriebsspannung von Leuchtdioden liegt bei etwa 2 V. Zur Anpassung an höhere Versorgungsspannungen, wie sie zum Betrieb von Glüh- und Glimmlampen gebräuchlich sind, ist c?s bereits bekannt, die Leuchtdioden mit einem eingebauten Vorwiderstand zu versehen. Bei dieser Bauweise wird jedoch nur ein kleiner Teil der verbrauchten elektrischen Leistung in sichtbares Licht umgewandelt, während der größte Teil im Vorwiderstand in Wärme umgewandelt wird.The normal operating voltage of light emitting diodes is around 2 V. To adapt to higher supply voltages like them for the operation of incandescent and glow lamps are common, c? s is already known, the light-emitting diodes with a built-in series resistor to provide. With this design, however, only a small part of the electrical power consumed is used in Visible light is converted, while most of it is converted into heat in the series resistor.
509809/0626509809/0626
Hier soll·die Erfindung Abhilfe schaffen. Erfindungsgemäß sind mehrere Einzel-Leuchtdioden in einem gemeinsamen Halbleiterkörper integriert und elektrisch hintereinander geschaltet. The invention is intended to provide a remedy here. According to the invention are several single light-emitting diodes in a common semiconductor body integrated and electrically connected in series.
Durch diese Bauweise ist die Herstellung einer Mehrfacli-Leuchtdiode gemäß der Erfindung mit einer bestimmten, gewünschten Betriebsspannung durch die Hintereinanderschaltung einer entsprechenden Anzahl von integrierten Einzeldioden möglich. Dabei wird eine erheblich höhere Lichtausbeute und ein besserer Wirkungsgrad als bei der bekannten Ausführung mit Vorwiderstand erzielt.This construction makes it possible to produce a multi-faceted light-emitting diode according to the invention with a certain, desired operating voltage through the series connection a corresponding number of integrated individual diodes possible. This results in a significantly higher light output and a better efficiency than with the known version with series resistor is achieved.
Die Zeichnung zeigt ein Ausführungsbeispiel der Mehrfach-Leuchtdiode gemäß der Erfindung. Es sind mit 1 die Anschlußdrähte, mit 2 das Gehäuse, und mit 3 die integrierten Einzeldioden bezeichnet. Bei der dargestellten Integration von vier Einzeldioden ergibt sich z. 3. eine Versorgungsspannung von ca. 8 V. und die vierfache Helligkeit gegenüber einer Einzeldiode. The drawing shows an embodiment of the multiple light-emitting diode according to the invention. There are with 1 the connecting wires, with 2 the housing, and with 3 the integrated single diodes designated. In the case of the integration of four individual diodes shown, z. 3. a supply voltage of approx. 8 V. and four times the brightness compared to a single diode.
Die Mehrfach-Leuchtdiode gemäß der Erfindung kann vorteilhaft eingesetzt werden in den Fällen, wo eine AnzeigelampeThe multiple light emitting diode according to the invention can be advantageous be used in cases where an indicator light
509809/0626509809/0626
mit gleicher Helligkeit wie bei Glüh- oder Glimmlampen, aber bedeutend höherer Lebensdauer und Widerstandsfähigkeit gegen Umwelteinflüsse wie Umgebungstemperatur und Erschütterungen benötigt wird, und wo ferner keine zum Betrieb von normalen Leuchtdioden nötige niedrige Versorgungsspannung zur Verfügung steht.with the same brightness as incandescent or glow lamps, but significantly longer service life and resistance against environmental influences such as ambient temperature and vibrations is required, and where furthermore no low supply voltage required for the operation of normal light-emitting diodes is available stands.
509809/0626509809/0626
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732342298 DE2342298A1 (en) | 1973-08-22 | 1973-08-22 | Multiple light emitting diode (LED) with increased luminance - consists of several LEDs integrated in common semiconductor body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19732342298 DE2342298A1 (en) | 1973-08-22 | 1973-08-22 | Multiple light emitting diode (LED) with increased luminance - consists of several LEDs integrated in common semiconductor body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2342298A1 true DE2342298A1 (en) | 1975-02-27 |
Family
ID=5890362
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732342298 Pending DE2342298A1 (en) | 1973-08-22 | 1973-08-22 | Multiple light emitting diode (LED) with increased luminance - consists of several LEDs integrated in common semiconductor body |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE2342298A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE9404982U1 (en) * | 1994-03-23 | 1994-06-01 | Siemens Ag | LED with high efficiency |
| DE102006046038A1 (en) * | 2006-09-28 | 2008-04-03 | Osram Opto Semiconductors Gmbh | LED semiconductor body for e.g. vehicle lighting, has radiation-generating active layers adjusted to operating voltage such that voltage dropping at series resistor is larger as voltage dropping at semiconductor body |
-
1973
- 1973-08-22 DE DE19732342298 patent/DE2342298A1/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE9404982U1 (en) * | 1994-03-23 | 1994-06-01 | Siemens Ag | LED with high efficiency |
| DE102006046038A1 (en) * | 2006-09-28 | 2008-04-03 | Osram Opto Semiconductors Gmbh | LED semiconductor body for e.g. vehicle lighting, has radiation-generating active layers adjusted to operating voltage such that voltage dropping at series resistor is larger as voltage dropping at semiconductor body |
| US8283684B2 (en) | 2006-09-28 | 2012-10-09 | Osram Opto Semiconductors Gmbh | LED semiconductor body and use of an LED semiconductor body |
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