DE2337116A1 - Halbleiterschichtlaser - Google Patents
HalbleiterschichtlaserInfo
- Publication number
- DE2337116A1 DE2337116A1 DE19732337116 DE2337116A DE2337116A1 DE 2337116 A1 DE2337116 A1 DE 2337116A1 DE 19732337116 DE19732337116 DE 19732337116 DE 2337116 A DE2337116 A DE 2337116A DE 2337116 A1 DE2337116 A1 DE 2337116A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- laser
- crystal
- electrode
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 239000013078 crystal Substances 0.000 claims description 29
- 230000003287 optical effect Effects 0.000 claims description 4
- 230000007547 defect Effects 0.000 description 10
- 230000010355 oscillation Effects 0.000 description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 229910052681 coesite Inorganic materials 0.000 description 3
- 229910052906 cristobalite Inorganic materials 0.000 description 3
- 230000006378 damage Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910052682 stishovite Inorganic materials 0.000 description 3
- 229910052905 tridymite Inorganic materials 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 238000003776 cleavage reaction Methods 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000007017 scission Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000003542 behavioural effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7362672A JPS5624397B2 (enrdf_load_stackoverflow) | 1972-07-21 | 1972-07-21 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2337116A1 true DE2337116A1 (de) | 1974-02-14 |
Family
ID=13523701
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19732337116 Pending DE2337116A1 (de) | 1972-07-21 | 1973-07-20 | Halbleiterschichtlaser |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5624397B2 (enrdf_load_stackoverflow) |
| DE (1) | DE2337116A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002060023A1 (en) * | 2001-01-23 | 2002-08-01 | The University Court Of The University Of Glasgow | Improvements in or relating to semiconductor lasers |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4994292A (enrdf_load_stackoverflow) * | 1973-01-11 | 1974-09-06 | ||
| JPS50153589A (enrdf_load_stackoverflow) * | 1974-05-29 | 1975-12-10 | ||
| JPS516491A (en) * | 1974-07-04 | 1976-01-20 | Nippon Electric Co | Handotaireezano seizohoho |
| JPS5193174A (enrdf_load_stackoverflow) * | 1975-02-12 | 1976-08-16 | ||
| JPS559480A (en) * | 1978-07-07 | 1980-01-23 | Nec Corp | Large light output, lateral mode of semiconductor laser element |
| US4349905A (en) * | 1980-07-22 | 1982-09-14 | Hewlett-Packard Company | Tapered stripe semiconductor laser |
| JPS59105394A (ja) * | 1982-12-09 | 1984-06-18 | Nippon Telegr & Teleph Corp <Ntt> | 半導体レ−ザ装置 |
| JPS6066891A (ja) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | 半導体レ−ザ装置 |
| US4722088A (en) * | 1984-09-14 | 1988-01-26 | Siemens Aktiengesellschaft | Semiconductor laser for high optical output power with reduced mirror heating |
| JP2012222296A (ja) * | 2011-04-13 | 2012-11-12 | Sumitomo Electric Ind Ltd | 量子カスケード半導体レーザ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3363195A (en) * | 1963-07-01 | 1968-01-09 | Bell Telephone Labor Inc | Junction diode maser |
-
1972
- 1972-07-21 JP JP7362672A patent/JPS5624397B2/ja not_active Expired
-
1973
- 1973-07-20 DE DE19732337116 patent/DE2337116A1/de active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002060023A1 (en) * | 2001-01-23 | 2002-08-01 | The University Court Of The University Of Glasgow | Improvements in or relating to semiconductor lasers |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5624397B2 (enrdf_load_stackoverflow) | 1981-06-05 |
| JPS4932589A (enrdf_load_stackoverflow) | 1974-03-25 |
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