DE2320472C2 - Gehäuseaufbau für einen durch Licht aktivierbaren Halbleitergleichrichter - Google Patents
Gehäuseaufbau für einen durch Licht aktivierbaren HalbleitergleichrichterInfo
- Publication number
- DE2320472C2 DE2320472C2 DE2320472A DE2320472A DE2320472C2 DE 2320472 C2 DE2320472 C2 DE 2320472C2 DE 2320472 A DE2320472 A DE 2320472A DE 2320472 A DE2320472 A DE 2320472A DE 2320472 C2 DE2320472 C2 DE 2320472C2
- Authority
- DE
- Germany
- Prior art keywords
- housing
- housing structure
- light
- semiconductor
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 70
- 125000006850 spacer group Chemical group 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 238000005219 brazing Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4295—Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
- H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor
Landscapes
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Thyristors (AREA)
- Die Bonding (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US24845372A | 1972-04-28 | 1972-04-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2320472A1 DE2320472A1 (de) | 1973-11-15 |
| DE2320472C2 true DE2320472C2 (de) | 1983-05-05 |
Family
ID=22939199
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2320472A Expired DE2320472C2 (de) | 1972-04-28 | 1973-04-21 | Gehäuseaufbau für einen durch Licht aktivierbaren Halbleitergleichrichter |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3796881A (sv) |
| JP (1) | JPS4949587A (sv) |
| CH (1) | CH566645A5 (sv) |
| DE (1) | DE2320472C2 (sv) |
| FR (1) | FR2182224B1 (sv) |
| GB (1) | GB1432676A (sv) |
| SE (1) | SE390086B (sv) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144541A (en) * | 1977-01-27 | 1979-03-13 | Electric Power Research Institute, Inc. | Light-activated semiconductor device package unit |
| US4131905A (en) * | 1977-05-26 | 1978-12-26 | Electric Power Research Institute, Inc. | Light-triggered thyristor and package therefore |
| US4136357A (en) * | 1977-10-03 | 1979-01-23 | National Semiconductor Corporation | Integrated circuit package with optical input coupler |
| US4257058A (en) * | 1979-07-05 | 1981-03-17 | Electric Power Research Institute, Inc. | Package for radiation triggered semiconductor device and method |
| JPS57132471U (sv) * | 1981-02-10 | 1982-08-18 | ||
| JPS589372A (ja) * | 1981-07-08 | 1983-01-19 | Mitsubishi Electric Corp | 光点弧サイリスタ |
| JPS5897864A (ja) * | 1981-12-07 | 1983-06-10 | Mitsubishi Electric Corp | 光トリガサイリスタ |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3590344A (en) * | 1969-06-20 | 1971-06-29 | Westinghouse Electric Corp | Light activated semiconductor controlled rectifier |
-
1972
- 1972-04-28 US US00248453A patent/US3796881A/en not_active Expired - Lifetime
-
1973
- 1973-04-16 GB GB1823073A patent/GB1432676A/en not_active Expired
- 1973-04-21 DE DE2320472A patent/DE2320472C2/de not_active Expired
- 1973-04-26 JP JP48046866A patent/JPS4949587A/ja active Pending
- 1973-04-27 SE SE7306035A patent/SE390086B/sv unknown
- 1973-04-27 FR FR7315516A patent/FR2182224B1/fr not_active Expired
- 1973-04-27 CH CH606173A patent/CH566645A5/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| CH566645A5 (sv) | 1975-09-15 |
| SE390086B (sv) | 1976-11-29 |
| DE2320472A1 (de) | 1973-11-15 |
| FR2182224A1 (sv) | 1973-12-07 |
| US3796881A (en) | 1974-03-12 |
| FR2182224B1 (sv) | 1977-12-30 |
| JPS4949587A (sv) | 1974-05-14 |
| GB1432676A (en) | 1976-04-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE102017108050B4 (de) | Halbleiterstrahlungsquelle | |
| EP1566846B1 (de) | Optoelektronisches Bauelement | |
| EP0852816B1 (de) | Optoelektronisches halbleiter-bauelement | |
| DE19536463C2 (de) | Verfahren zum Herstellen einer Mehrzahl von Laserdiodenbauelementen | |
| DE69932105T2 (de) | Verfahren zum Verpacken einer Subträgerbaugruppe | |
| DE2619312A1 (de) | Halbleiter-heizelement | |
| EP3262728B1 (de) | Verfahren zum herstellen eines diodenlasers und diodenlaser | |
| DE10122666A1 (de) | Licht emittierendes Element vom rückseitig Licht emittierenden Chiptyp und isolierendes Substrat dafür | |
| DE10361899B4 (de) | Ausdehnungsangepasstes wärmespreizendes Mehrlagensubstrat | |
| DE102008000024A1 (de) | Abgesicherte Elektrolytkondensator-Anordnung | |
| WO2013056967A2 (de) | Strahlungsemittierendes bauelement | |
| DE2808508A1 (de) | Halbleiterbauelement | |
| DE2320472C2 (de) | Gehäuseaufbau für einen durch Licht aktivierbaren Halbleitergleichrichter | |
| WO2016180897A1 (de) | Verfahren zur herstellung optoelektronischer bauelemente und oberflächenmontierbares optoelektronisches bauelement | |
| DE1464711C3 (de) | Diodenlaser | |
| EP1680949B1 (de) | Verfahren zur Herstellung einer Lötstoppbarriere | |
| WO2016188908A1 (de) | Bauelement | |
| DE2721250C2 (de) | Optokoppler | |
| DE1817955A1 (de) | Laseranordnung aus zwei halbleiterlasern | |
| CH638641A5 (de) | Halbleiterbauelement, verfahren zu dessen herstellung und verwendung des halbleiterbauelements. | |
| EP1177605B1 (de) | Laserdiodenvorrichtung und herstellungsverfahren | |
| DE4201183A1 (de) | Leistungsdiode | |
| WO2023237531A1 (de) | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements | |
| DE3342329A1 (de) | Elektrischer kondensator aus einem verfestigten stapel von aneinander geschichteten metallisierten dielektrikumslagen und verfahren zu seiner herstellung | |
| DE2310051B2 (de) | Leistungshalbleiterbauelement |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8126 | Change of the secondary classification |
Ipc: H01L 31/02 |
|
| 8181 | Inventor (new situation) |
Free format text: ROBERTS, JOHN S., EXPORT, PA., US |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |