DE2306701C2 - Method for the relief-like recording of signals a - Google Patents

Description

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⁸⁵ The reaction mentioned under 6 does not occur in * "" if the intensity "^

The invention relates to a method for the relief ar- nemieWfgem ^{™haben &} SouSechicht term recording of signals on a press ™ ^e "J" _emReste ii _t is that only the processes I die or for their production serving metallic radiation .wngesrei ι, ^^

"The carrier is modulated by a laser beam modulated with the 30 th 3 * ^ JZ ^ jS * £ b £ ^ diffuse reflective signals, with which rays are also directed to a photosensitive surface layer of the carrier ^{in a jit" t- * of ° r * intensity} you ^ ^ ^^ ^

first of all an etching mask is generated over which in weak, " ^m evoke. This applies in particular

a subsequent etching process that creates the _{relief corresponding to that} for photolithographic storage signals electroforming Umkopierprozes- ^len "^" ^ ¹ ^ IFJ expose the fotoempfindüchen sen, in a pressing process similar to a finely focused in WirdJg ^ GJT

Production of records conventional methods ^upper plates "f _r ^c ^ ™ _nd et fat as the mentioned effect can be produced on which the stored Si 4" lasers ^ J ^ i ^ düSteStnMung the Fotognale, by deformations mechanically low-i ^^^ J is exposed _here, clearly Barer surface parts are characterized. elteiC · originally desired, by loading

It can be determined in particular from the recording of the '"" P ™ 5 ». * _{Mh naem} i _i greater information large bandwidth ranging from bright taut structure to be achieved namiicn gr several MHz, for example, to the recording of 45 ^ _U ne this knowledge is based and

of a television picture, along a spiral deformation negi u

, on the trace of such a plate (e.g. after German- ^ beij «d« j ^^ üjertajjnef ^ ^ ^

Schem patent 1574 489) thought ϊί! Α "dkΓ photosensitive layer through ilen

The invention is based on the object, the focal spot at the same the toioe ^m P _h ■ _{d d da3} time with the storing operation in the Preßma- than 50 Pnmarstrahl completely durgb t ichtet w ^α

trize or carrier used for their production an outside of the J ^ SfSkmfdtatraMune n5r a

to create a spiral track, which during playback ^^^ So ^ S ^ Si ^ be

process serves to guide the scanning diamond ^, ^ bTffvoui through-exposed. In this

To solve this problem, _em ^ be, the ^^ l ^ S 2 from the carrier surface differs

high-gloss and therefore reflects light.

to a great extent. In an electron microscopic 6c n "i _m Pntwickeln this-working in positive Fo

or when examining the
Surface of the carrier with a surface feeler

gel layer and, as a photosensitive layer, a photoresist layer accepted.

Should now be a corresponding to the information to be saved Relief can be etched into the carrier, the photoresist layer hardened after development serves as an etching mask, the etching process runs mainly in the direction of the projection of the fully developed photoresist structure, the dimensions of which correspond to the laser beam focal point. The amount of etching under the partial photoresist layers remaining after development runs more slowly, because he is physically handicapped in these places. The result is a steeper etched structure, the has the signals to be stored, as well as a shallow etched, the structure surrounding courtyard according to der Darstellui: ^ after F i g. 2. One recognizes from this Exemplary representation that the structure has a width of 4 μπι and the courtyard a width of 6 μπι having. Because the individual structural elements along a spiral track are sufficient close to each other:., a flat and coherent one is created during the etching process The track after the galvanoplastic copying and pressing known from record production the plastic imprints can be used to guide the scanning diamond.

The invention is to be explained using an example.

On the surface of the nickel support, which has an average surface roughness of 20 nm a layer of positive working photoresist, e.g. B. one under the designation "AZ-1350" photoresist on the market, applied so that it is 0.4 μΐυ thick after drying. This Layer is used for the purpose of their exposure to the radiation of an argon ion gas laser with, for example of wavelength 257.25 nm - after frequency doubling of the original beam of wavelength 514.5 nm - exposed in such a way that the entire thickness of the photoresist layer is exposed from above will. To expose a point, it is irradiated for 50 μ5 with a laser power of 400 μ W, then the carrier is moved forward, irradiated again, and so on. In this way, after the development and hardening of the photoresist and after the subsequent etching of the carrier Sequence of etched points of 4 μm diameter, whose

ao centers are 5 μm apart if the carrier has been moved further by 5 μm to expose a new point in each case. This sequence of points is surrounded by an uninterrupted halo that is about a third of the etch points deep and one

»5 width of about 6 μm according to the illustration from F i g. 2 has. The track that forms from this courtyard can function as a guide groove take over.

1 sheet of drawings

Claims (1)

is reflected. This diffuse reflection is Claim: S ^ TEÄ ^ SS ^^^ surface roughness of the carrier ^^^ ^ _ A method for relief-like recording flacnengenrg ^e _{ft ffende L} ichtstrahienbündel or signals to a ken as a stamper, or to their 5, the "■ _a ^" e Leue ™ direction reher position serving metallic support by at least tu one with the signals to be recorded modu- Γ-ί. ^ "' _a light beam of suitable white lated laser beam, with which in a photosensitive surface only _{such a} surface, which, however, was previously ^len loan layer on the support first an etching »^ ™ ^ sensitive layer, eg. B. a photomask is generated over which in a subsequent i. has _been with ^^ ^}, then etching process folßenden play the '.Vl' _from gnalen corresponding relief is formed to be stored Si ^lac ^ ^c ", data from constricting precedent. by in that the Laserlei- ι. Absorption of light lnoer stung will sioned for the exposure process such dimen- 2. Photochemical reaction in ae that in the focal spot the fotoemp- »5 3. Absorption of the fo *?!? ™-sensitive layer by the primary beam completely _gen the proportion of Lichtbundeis in 1 ^a g ^he is through-exposed and that outside the 4th diffuse reflection of a part of the light bundle focal spot the diffuse from the carrier surface from the carrier surface, ... _{fr5) h} , _Iino ■ reflected secondary radiation only a part of the 5th absorption of the diffuse secondary radiation in the photosensitive layer from below exposing _the photo lacquer layer, _c . . . tet, but not completely exposed. 6. Photochemical reaction that the ****** in the surroundings of the photoresist areas exposed by the pnmar beam are exposed from below