DE2233269A1 - INFORMATION MEMORY AND INFORMATION MEMORY CIRCUIT - Google Patents

Description

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PATENT LAWYERS F.W. HEMMEHICH -GERD MÜLLER- O.GROSSE 22

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3.7.1972

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Olympus Optical Cg »Ltd. , Tokyo / Japan -. · -..-

Information storage / information storage circuit

This invention relates to an information storage circuit or an information store. This invention is concerned in particular, however, with such an information store or such an information storage circuit, who is able to understand the amount of analogous information to store or maintain a correspondingly strong current «

Information storage or information storage circuits, which is essentially a given piece of information at a later date and to reproduce or reproduce the appropriate point in time can be found in the most varied of areas use in technology in which information is stored and reproduced or reproduced in analog form Must * Is using the shutter speed of a camera the exposure values of one located in front of the camera lens Object controlled and regulated, namely by the light meter of, for example, a one-eyed TTL reflex camera - the term TTL stands for Light measurement through the lens - measured exposure values, then the established exposure time is temporarily stored for determining the shutter speed. For this Basically in this case it is necessary that the exact information relating to the brightness or relating to the exposure values of the object in the foreground are stored will.

The aim of this invention thus creating a 1st information memory or an information memory circuit of / is able to store an amount of the analog input information corresponding to large current and to keep.

Another object of this invention is to create an

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formation memory or an information storage circuit, which is constructed and laid out in such a way that it stores the result of the exposure measurement in the form of a current corresponds exactly to this exposure measurement, so that you do it again the exact shutter speed of the photographic camera can be determined.

In one embodiment of this invention, the intended information memory or information storage circuit includes: an information input element or an information sensor which is arranged so as to that through this element or through this sensor a ventimmed and corresponding to the exposure input value to be stored Electricity can flow; a with the aforementioned information input eel a t or mi.t the aforementioned information sensor field effect transistor connected in series; a constant voltage source, the information input element or the information sensor and the field effect transistor with bias or has to supply control voltage; a circuit-wise between the voltage source and the control electrode or the gate of the field effect transistor arranged capacitor; Finally, there is also a switch that connects the transistor to the input element at the time of information storage or connects to the input probe, dec beyond selectively also connects the transistor with the load or the load resistor when the information should be forwarded "

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This invention will now be described below with reference to the drawing illustrated embodiment (the embodiments shown in the drawing) explained in more detail. The drawing shows in: -

Fig. 1 The circuit diagram or the circuit diagram of an information memory or an information storage circuit this invention

Fig. 2 is a characteristic diagram showing the function of the Fig «I shows the device or circuit shown.

Fig. 3 A circuit diagram or a functional circuit diagram relating to the electrical components of a single-lens TTL reflex camera, this also includes the information memory or the information storage circuit of this invention.

.., "Circuit diagrams or circuit diagrams from information storage 1 <£

brazen or information spelchers as modified Embodiments of this invention.

As can be seen from Fig. 1, a constant voltage source 2 - ie a DC voltage source - for the bias voltage or the control voltage with its positive terminal is led via the switch k to the collector of a field effect transistor 6 with an N-junction. (This field effect transistor is referred to as FET in the further course of this patent application). The emitter of the field effect transistor FET 6 is connected to the cathode of a solar cell or a photocell via a switch 8 via the normally closed or normally closed contact 10 of the switch Q. The anode of the solar cell or photocell 12 is negative Connection of the bias voltage source or control voltage source

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connected, namely via the load or the load resistor Ik, between the gate or the control electrode and the emitter of the field effect transistor FET 6, a capacitor 16 is arranged in circuit terms, the connection of the gate or the control electrode to the capacitor 16 also with the solar cell or the photocell 12 is connected via a second switch 18.

The circuit shown in FIG. 1 in the manner described above will now be described below with reference to the characteristic curve diagram according to FIG. 2. Referring to Fig. 1, it is assumed that incident light is stored as information in the solar cell or photocell 12 that a photoelectric current I is still ready to flow. The capacitor 16 is now charged until the switch k is switched on, the field effect transistor FET 6 being positive on the gate side or control electrode side, but negative on the emitter side. At this time, a bias voltage or control voltage is applied between the gate and emitter of the field effect transistor FET 6, which makes the gate or the control electrode positive, with the result that when the switch k is closed, the field effect transistor FET 6 is also switched on or in the on state is brought. In this way, however, the capacitor 16 is charged in such a way that it makes the emitter of the field effect transistor FET 6 positive, but the gate or the control electrode of this field effect transistor makes it negative. A reverse bias voltage or control voltage or a reverse voltage is now applied between the gate / control electrode and the emitter to reduce the collector current of the field effect transistor FET 6. Because now the GATT or the control electrode of the field effect transistor FET 6 with dam negative terminal of the pre-

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Voltage source 2 is connected via a switch 18, the reverse voltage or the reverse voltage of the solar cell or the photocell 12 is possibly made equal to the terminal voltage of the capacitor 16, so that an adjustment or a state of equilibrium is brought about. This state of balance or equilibrium can be identified according to FIG. The current I at the aforementioned intersection point P corresponds to the photoelectric current I _n , which flows through the solar cell or the photocell 12 and at this point in time is equal to the collector current of the field effect transistor FET6. The terminal voltage of the capacitor 16 is equal to the reverse voltage or reverse voltage of the solar cell or the photocell 12, with the result that in order to make the collector current of the field effect transistor FET 6 equal to the photoelectric current, an optimal reverse voltage or reverse voltage is created.

If the switch 18 is opened, the switch 8 is also switched from the normally closed or normally closed contact 10 to the normally open and normally open contact 11, then a collector current is fed to the field effect transistor FET 6 under the action of the bias of the capacitor 16 which is equal to the photoelectric current I. This collector current flows from the normally open and normally open contact 11 of the switch 8 to the load or to the load resistor Ik. This converts the strength of the incident light into the photoelectric current I_; it is also used as a charging

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voltage of the capacitor l6 to determine the bias voltage or the control voltage that is to be applied between the gate / control electrode and emitter of the field effect transistor FET 6, stored, ie as the current to flow through the field effect transistor FET 6 .

Generally speaking: enables the information storage circuit or the information store of this invention under intact or common mode conditions Storage of the flow of information that goes through the complete Storage, reproduction and conversion of the photoelectric current achieved by the field effect transistor FET 6 is, but also storage and reproduction of the resulting information, and this in a state of the quality and amount of which is very accurate. In addition, the device or circuit of this invention works in a stable manner without even being affected by any fluctuation in the behavior of the various circuit elements, belonging to the circuit to be affected, which is a great advantage for mass production

A description will now be given of the case where the information memory or the information storage circuit of this invention together with a TTL single lens reflex camera is used, whereby the TTL stands for light measurement through the lens · To the image recording optical system this camera includes a pivoting reflector or mirror using the image pickup lens or lens as a part of the viewfinder optical system where in the viewfinder, i.e. in the field of view of the viewfinder, the exact image can be observed that also by the camera optics is recorded «When recording, the pan

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from the beam path through which the necessary for photography Light is guided, is swiveled out, with then the taking lens or lens as a part of the Recording optics is used.

Xst such a camera, however, with an automatic aperture setting provided, which is interlocking with an actinometer or a photometer - this as an EE system (automatic Exposure measurement) known - is provided, or with an electric shutter to determine the shutter speed, then there is an exposure metering element in the finder optical system built-in · If the movable reflector or the oscillating mirror is now actuated at the time of the image acquisition and pivoted out of the beam path, then the incidence of light into the photometer element is temporarily interrupted, then is also during the interruption of light incidence the Lock actuated. If during this period the measured value of the light is not saved and in this way the keep original light information, then the shutter could not be properly controlled and regulated «

The information memory or information storage circuit This invention is designed to be used as a storage device for such purposes can be used.

The operation of a single-lens TTL reflex camera provided with an electrical shutter and additionally also with the information memory or information storage circuit of this invention will now be described with reference to FIG. 3 , the designation TTL standing for light measurement through the lens. With this arrangement it is possible to adjust the shutter speed (expressed in seconds)

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d © n corresponds exactly to the values mentioned below: the selected aperture setting;, the Filraeraprindlichkeit according to ASA and the brightness of the object located in front of the lens of the camera φΟχθ The description below refers to the so-called © camera with automatic light measurement according to the EE = Systenip bsi der vor In order to determine the shutter speed, the diaphragm setting is first determined, dolio on a camera version, in which the shutter speed is determined with the diaphragm fully open _p, that is, according to the open diaphragm process

In the circuit according to Figo 3 TeIIe ₉ already with Fig, - been designated '1 _p are also marked with the same reference numbers. In this case the solar cell or photocell 12 is arranged as a photometric element at a suitable point on the camera . In the TTL camera, the light receiving olemant is arranged in an open manner near the viewfinder. The amount of light recorded at this point is a maximum of around 800 lux (ev 18) in lighting units on the surface of the photometer element, whereas the smallest amount of light recorded is EV 0 to 5 for night photos.

If the aforementioned smallest amount of light received is taken so,

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that it is 800 χ 2 lux, then this corresponds to lighting of a millionth of 800 lux and even causes difficulties when measuring the light intensity, but on the other hand generates the solar cell used in a camera of the TTL version or photocell 12 a photoelectric current or a η photocurrent of around two microamps for an illumination of

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100 lux, which is equivalent to a value of around 15 EV on the Basis of an object in front of the lens and its brightness. With regard to an EV value of -5 therefore the solar cell or the photocell 12 must have a photo. can hold electricity, which is equal to a hundred thousandth of 2 microamperes, i.e. equal to 2 10 microamperes or equal to 2 micromicroamperes.

Is in this case with regard to the backward judicial ' and errors occurring in the solar cell or photocell 12 lerstrom photocurrent in full strength there, then the information memory or the information storage circuit of these Invention to fulfill the photometric function in an excellent way. With a TTL camera and the information store or the information storage circuit of this invention Tests carried out have shown that the camera gave extremely good results in this regard.

As can be seen from Fig. 3, the block 20 surrounded by a broken line forms an information memory or an information storage circuit of this invention, whereas the block 22 also surrounded by a broken line stands for an electric shutter drive circuit which, on the basis of the Information transmitted to block 20 has to determine the shutter speed (in seconds). The block marked with the general reference number 2k is the exposure warning device, which will be described later in this patent application. The electric shutter drive 22 and the exposure warning device 2k are connected through a switch 26 in a selective manner with the information storage or information storage circuit 20 ·

The information memory or information storage circuit

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according to Fig. 3 ± sa substantially corresponding information storage circuit of Pig "1 and Figo 2" An apparatus vein circuit of Fig. 3, some improvements have been made for mounting in a camera which is nach'Fig, 1 when the switch 18 the switch 8 is switched to the normally open and normally open contact 11, then the energy stored in the capacitor lö is discharged through the load or the loading resistor Ik , so that it is necessary to open the switch 18 when the load or the load resistor Ik receives the saturated collector current of the field effect transistor FET 6 switched on. With this, however, a camera which is provided with an electric shutter drive 22 and an exposure warning device 2k according to FIG Difficulties that could otherwise arise can be avoided

If the incident light is low, the resulting Shutter speed extremely slow, or is the incident Light for © ine mechanical © shutter control too strong, ^ see above that it could come to over-light, then becomes the photographer warned by the aforementioned exposure warning device not to operate the electric shutter. In this case, instead of the electrical locking drive the aforementioned exposure warning device in operation taken·

In the wiedergsgebanen with Fig. 1, information storage or when with FIG _o 1 darg @ 3tellt0n information storage circuit of the switch 18 is turned on by the depression of the shutter release button in SWEi Stufan and off "After measuring is sunken light quantity inspects the first

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However, the first step is to switch off or open the normally closed contact 10 belonging to the switch 18 and designed as a normally closed contact and to switch on the normally open contact H ₀ "which also belongs to the switch 18 and which is designed as a normally open contact also the switching of with Figure "3 wiedergeg'ebenen switch 26 on the exposure warning device Zh ₉ to be able to determine whether a correct exposure is possible" During the second step, the switch 26 is switched to the electric shutter drive 22 _f ifas again to The result is that the shutter is released in the manner mentioned below and an exposure takes place only in the time corresponding to the collector current flowing through the field effect transistor FET 6 object located in the camera or in its position and this has a change in the Belci In order to measure the incident light, the shutter release button must be pressed a second time »

For this reason, the information memory or the information storage circuit 3 has been changed to the effect that the anode of the solar cell or the photocell 12 on the negative connection of the voltage source 2 is performed, via the switch 10a, but also via the transistor 30 of the electric shutter drive as a load «By this arrangement it is possible that the photoelectric current or the photocurrent from the solar cell or photocell 12 to the electric shutter drive 22 then also flow as a load can, if the switches 2 and 18 are in the switched-on state

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find © n _s, and the switches 10a and 11a in the off state "In the (with reference to Figure" 1 is not wiadergegebenen) resistors 32 and 3k of the store or the information storing section is calibrated to SpannungsteilerwiderständQ that the Gatt or the control electrode of the field effect transistor FET 6 have to be supplied with the correct voltage »

The electric shutter drive according to FIG. 3, ie the shutter drive 22, is composed of a circuit 57 to which, according to the information or the illustration, belong: the two-pole transistors. kO _s kZ and kk $ a variable resistor or Regeltfiders band k6 and the resistors ^ B ₉ 50, 52, 5 ^ and 56. If a magnet 58 connected to the output circuit of the aforementioned circuit 57 is excited, energized and attracted then a mechanism that acts on the rear membrane of a focal plane shutter is controlled and operated

When the switch 10a is closed, then flows through it, the holding current of the field effect transistor FET 6 and prevents the Kleminenstrom © Ines capacitor 100 is greater than or stronger "Accordingly, also that part of the circuit 57 'is located behind the transistor 36, operational ineffective. Of belonging to the aforementioned circuit 57 transistors of Feldeffekttransistor.36 is then brought into the on state or turned _s wezin whose Gattspannung or gate voltage ₉ from the terminal voltage of the capacitor 100 results ^ with respect to the emitter voltage by the Feldeffakttransistor FET 38 series-connected variable resistance k6 is determined to assume a certain wart ο the presidential resistance or adjustable

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Resistor k6 is constructed and dimensioned so that its resistance value corresponds in each case to the ASA film speed of a film used with the camera. The output signal of the field effect transistor FET j6 is amplified by the transistor ^ O and passed on to the transistor kZ . The outputs of the transistors ko and k2 are switched to the exposure warning device 2k and passed on there when the overexposure to be described later in this patent application is detected, as well as for evaluating a possible camera shake when the shutter release button is manually operated. The output of the transistor k2 is switched to the transistor kk , which forms the excitation circuit for a magnet 58 , the rear membrane of the focal plane shutter being held back when the magnet 58 is applied and made to be attracted, whereas when the Magnet 58 is caused to fall off, the rear membrane is moved forwards and an exposure takes place in the process.

Before the shutter is operated and released, it is necessary that the information is completely stored in the information memory or in the information storage circuit 20, that the front membrane of the focal plane shutter is opened by pressing a release button, that finally the capacitor is also powered off. the aforementioned information memory or from the aforementioned information storage circuit 20 is charged by opening the switch 3 at the same time. The magnet that holds the rear membrane of the focal plane shutter is energized and attracted by the fact that the switch 26 is switched from the exposure warning circuit 2k to the electric shutter drive 22.

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This is the time _9, at which the capacitor 100 is arfgeladsn with power from the information storage or from the Xnforiaations memory circuit 20 ₀ has the Gattspannung Odea the control electrode voltage _p 36 reaches a certain value of the field effect transistor FET then this field effect transistor FET 36 is susasisaen with the other Field effect transistor © n FET kO and FET 42 switched on and brought into the on state _? whereas the field effect transistor FET kk is switched to the blocking state _s so that the voltage is removed from the magnet 58 and this magnet is brought to fall, which has the consequence that the rear membrane of the image plane shutter is released from the position held until then and an exposure performs ,,

The exposure warning device 2h includes an astable multivibrator 76 consisting of the field effect transistors FET 60 and FET 62, the resistors 6k, 6ύ, 68 and 70 and the capacitors 72 and 7 ^ 5 a bistable multivibrator 90 consisting of the field effect transistors FET 78 and 80 and the resistors 82p 8hg 86 and 885 a signaling lamp 9h for the overbalance warning finally still © in the circuit. 96, who has to display and light up the signal lamp 92 for correct exposure «

Because - with the exception of the state in which the shutter is operated - the switch 2ö is normally in the switch position exposure warning device 2 ^ _? closed while the switch 2 _s is the astable multivibrator 76 is operated so that it generates pulses ;, the pulse width of, for example pointing © 30 Miilis © lcund © n is _β This output is then switched to the base of transistor 30, of the discharge circuit of the Kandesisafcors 100 forms _s and smr via © inen switch TL ₁

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whereby, in turn, the aforementioned transistor 30 ^ ^{n is} switched on and off at a time interval of 30 milliseconds each time. The output of the astable multivibrator J6 is connected via a capacitor 77 to a standard timing generator circuit 81 ₉ consisting has "The output of this circuit 81 of the transistor 79, a period, or · a pulse width of, for example, one millisecond" This output signal is combined with the output signals of the field effect transistors FET kO and FET k2 connected to a comparator 9I on the ¹ consists of a capacitor and a resistor and connected to the bistable multivibrator 90 is "switched is applied to the comparator 91 and the 30 millisecond output VOSN astable ΜιαIt! vibrator j6" the Pulse widths of the four above-mentioned output signals are mixed with one another by the comparator, with the output signal
of the comparator is passed on via the diodes 93 ₉ 95 and 97 to the bistable multivibrator 90 _o By controlling the
Transistor 78 or transistor 8O ₁ , each of which belongs to the bistable multivibrator 90 ₅ , the signal lamp or the signal lamp 9 ^ is brought to burn, x ^ if the signal lamp 92 indicates an over-exposure, the signal lamp 9 ^, on the other hand, has the correct exposure · Has the output signals of the
Transistor 40 has a pulse width of less than a millisecond, then transistor 80 is turned on or in
brought the pass state and then ignites in turn - the signal lamp © 9 ^ overexposure ".arynung _ffl If the aforementioned output signal © in © pulse width ^ is between 1 and 30 milliseconds, then transistor 78 is switched on or in the pass-through state. brought up to date and in turn brings the signal lamp 92 correctly © exposure äsuin burning «,

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In addition, the aforementioned output signal now has a pulse width of more than 30 milliseconds then the transistors 78 and 80 activated alternately and in the on state switched, which has the consequence that both laraps are also switched on and off alternately.

The electric shutter drive 22 will now be described below. This electrical pre-circuit drive 22 is • operated or controlled by the operation of the normally closed and normally closed switches 10a and 18, the normally open and normally open switch 11a, the voltage source switch 2 and the switch 26 for the selective connection of the electrical shutter drive 22 and the Exposure warning device 2h with the information memory or with the information storage circuit.

When the exposure measurement is carried out, the voltage source switch 2 is switched on, as are switches 10a and 18, the switch 11a is switched off and the switch 26 is set to the exposure warning device 2k position 6 can be supplied with a saturated collector current that is as large as the photoelectric current that corresponds to the light incident on the solar cell or photocell 12 from an object in front of the camera. If this condition is met, then a shutter release button operating in two stages is actuated. If the transistor 30 is switched on or off at the same time as the first operating stage of the shutter release button, that is, it is brought into the conducting state or the blocking state, which in turn depends on whether the transistor 62 of the astable multivibrator is switched off or on, ie in the blocking state or in the

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Durchlaüzustand is brought "Located at the transistor 30 i ^m OFF state or in the off state, then the output current of the information storage or the information storing section is passed to the capacitor 100 to drive or to the arranged behind the field effect transistor FET j6 circuit 57 to operate. The output of the circuit 57 is switched to the exposure warning device 2k so that its pulse width can be compared there with the standard time pulse width. The result of the comparison decides which of the aforementioned signal lamps 92 and 9 ^ will light up. If this condition exists, then the capacitor 16 has varied or changed its charge in such a way that it allows the passage of a collector current through the field effect transistor FET 6, which is as strong as the photocurrent or the photoelectric current, the change in the light infermation in the Solar cell or photocell 12 corresponds to incident light. ■

If the photographing is confirmed as possible by the lighting up of one of the two indicator lamps 92 and 9 ^, then the shutter release button is depressed even lower in order to open the shutter after the mirror pivoting process. Before the switch 18 is turned off, turned on, the switch 11a and the switch 26 is switched from the position exposure warning device 2k to the position electric shutter drive 22, in interlocking fashion with the shutter release and the Spiegelhubbewegung · Accordingly, the transistor is kk _t of the Circuit 57 belongs to the electrical shutter drive, switched on and brought into the conducting state, so that the magnet 58 is connected to voltage and made to be attracted and, in turn, to one with the rear membrane

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connected mechanism acts "which after release the picture plane focal plane shutter opens »

By opening the switch 3, the charging of the variable capacitor connected to the input side of the electric shutter drive belonging to the circuit 57 with the saturated collector current of the field effect transistor FET 6 begins again Circuit 57 belonging transistor kh switched off or brought into the blocking state, which in turn leads to the fact that the magnet 58 is de-energized, drops out, so that the shutter is closed. In this case, the time required to charge the capacitor 100 up to a certain preset value changes with the strength of the photoelectric current or the photocurrent. In this way, the shutter speed or the shutter time is controlled and regulated by the collector current of the field effect transistor FET 6, the aforementioned collector current being as strong as the photoelectric current or the photocurrent corresponding to the light falling into the solar cell or the photo cell 12, where this in turn gives the opportunity to take photos with the correct exposure. The fact that the capacitor 100 is designed to be variable or changeable is also used to introduce information relating to the setting of the iris diaphragm, which is changed at the time of the light measurement n can.

In the case of the information memory or the information storage circuit retrieved signals are

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Fixed-magnitude current signals, which is why the capacitor is 100 for setting or determining the shutter speed or the shutter speed with a fixed amount of energy. with the result that the precise setting of the shutter speed or the shutter speed is made much easier will.

In the information storage or information storage circuit shown in FIG, h is the switch 10a used in the circuit of FIG. 3 is absent. If the voltage Vc stored in the capacitor l6 is greater than the voltage drop, ie the voltage Vz, across the load resistor 1Λ, then this circuit arrangement also fulfills its purpose. .

Compared to the circuit according to FIG. 1, the voltage source 2 in the circuit according to FIG. 5 has the opposite polarity, the field-effect transistor FET 6 is a field-effect transistor with a P-junction, in addition, the polarity of the solar cell or the photocell is also 12 have been changed. However, these are the only differences between the circuit according to FIG. 5 and the circuit according to FIG. 1.

The circuit of FIG. 6 includes an amplifying metal oxide field effect transistor FET 6a. The capacitor is connected between the emitter and gate or control electrode of the metal oxide field effect transistor MOS-FET 6a, but the switch 18 is connected between the collector and the gate or the control electrode of this field effect transistor. But otherwise the circuit 6 operates according to Fig. In the same manner as is the case with the circuit of FIG. ·

The operation or function of the embodiment shown by Fig. 6 will now be described the inventive subject matter. That in the solar cell or photocell

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Incident light as information, with switch 8 set to the terminal or contact 10 and with switches 4 and 18 closed, is converted by the solar cell or by the photocell 12 into a photoelectric current or pin photocurrent, while that stored in the capacitor 16 Energy is switched to the gate or the control electrode of the field effect transistor FET 6a and is applied there as a negative bias voltage or a negative control voltage of zero volts, then it is known that a current of zero will flow between the collector and the emitter of the aforementioned field effect transistor and by the emitter. Will now be particular the gate / control electrode of FET 6a and the photoelectric current are applied to a negative voltage, then this bias condition allows a collector current to flow through and bring the field effect transistor FET 6a into the on or on state. As far as the solar cell or the photocell is concerned, its anode remains positive and its cathode negative until switch h is closed.

The reverse connection of the solar cell or the photocell 12 to the voltage source 2 - this is a characteristic feature of all circuit arrangements of the described examples of the invention - has the function that not only when the solar cell or photocell 12 in series with the field effect transistor FET 6 is switched, but also when the solar

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cell or photocell 12 with the other circuit elements, including the active transistors, never an exactly corresponding relationship between the reverse voltage or the reverse voltage of the aforementioned photocell and the voltage source 2 and the dai ^ in generated photoelectric current comes, but that the voltage or the potential of the photocell 12 is freely determined in accordance with the condition in which it works or is put into operation after receiving light.

In the embodiment according to FIG. 6 belongs to the field effect transistor FET 6a also has a circuit that allows negative feedback through the capacitor l6, so that an opposite potential with respect to the photoelectric current assumes a certain value, especially when the field effect transistor FET 6a begins to be permeable, the capacitor 16 with the photoelectric current of the solar cell, or the photocell 12 is charged to make the emitter of the field effect transistor FET 6a positive, its Gate or control electrode but negative, then it is caused that by the aforementioned field effect transistor FET 6a Collector current flows. If the strength of this collector current is equal to the strength of the photoelectric current or the photostroraes, then the associated circuit is brought into a state of equilibrium or in a balanced state. Will the strength of the collector current greater than that of the photoelectric Current, then also the reverse voltage or reverse voltage of the solar cell or the photo cell shifted more to the positive side, which has the consequence that the gate or the control electrode of the field effect transistor shifted more to the positive side. But with that

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becomes the one at the gate or the control electrode of the field effect transistor FET 6a applied negative bias voltage or negative S expensive voltage lower, so that the collector current on * the original value is returned.

In the exemplary embodiment according to FIG. 7, the solar cell or photo cord 12 shown in FIG. 6 has been replaced by a constant voltage circuit 12a consisting of the transistor 110. This transistor 110 is constructed and designed in such a way that a current is applied to its base which corresponds to the strength of the light information to be stored. The other parts of the circuit of Figure 7 are the same _e the circuit of FIG. 6 and executed also operate in the same way as the circuit elements of the circuit of FIG. " 6 »

In the embodiment of the subject matter of the invention shown in FIG. 8, a field effect transistor FET 6b with a P-junction is used instead of the metal oxide field effect transistor FET 6a. Because a negative voltage must be applied between the collector and the emitter in all field effect transistor FET 6b, a bias voltage source or continuous voltage source 2a with a switch 18 _{t is arranged} between the gate / control electrode and the collector of the aforementioned field effect transistor FET 6b and an initial bias voltage leads to this field effect transistor, connected in series. The other parts of the circuit according to FIG. 8 are designed in the same way as those of the circuit according to FIG. 6 and also operate like them.

In the embodiment according to Fig. 9 of the field effect transistor FET 6b is shown in Fig _s has "8 of a P-junction, was- replaced by a field effect transistor FET 6c with N junction

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the, which in turn has the consequence that the voltage sources 2 and 2a and the solar cell or photocell 12 are given a reversed polarity.

The embodiment of the subject matter of the invention according to FIG. 10 is used in particular when in the solar cell or Photocell according to Fig. 1 only a small part of the light inf oraia-. tion occurs when this light is continuously reproduced within a short period of time after being stored, i.e. if there is an object in front of the camera that has only an extremely weak brightness, continuously from one with the information store or with the information memory circuit of this invention provided one-eyed TTL reflex camera is photographed.

According to FIG. 10, a diode 112 is connected in series with the solar cell or the photocell 12 in the reverse direction. If the stored light information for opening a switch 115 is reproduced by switching a switch 11 * to the contact 116, this is prevented Diode 112 that energy in the charging part of the solar cell or the photocell 12 is uselessly discharged, that the terminal voltage of the capacitor 16 also drops due to the switching of the switch Hk is reproduced, and as often as is necessary to supply the load or the load resistor band I. The other parts of the embodiment of Fig. 10 correspond to those of the circuit of Fig. 1 and also work like this.

Of all the above-described exemplary embodiments of this invention, only the working area of the peeling according to FIG. k limited by the voltage between their gate / control electrode

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2233269 July 3, 1972

and whose emitter is switched on, i.e. the terminal voltage of the capacitor 16 for storing the light information, if with the switch 18 of the embodiment according to FIG. 4 closed, current is taken, because the terminal voltage of the capacitor is relatively small, the disadvantage may arise that the field effect transistor not, over ilen entire allowable range can be operated or. can work. The other embodiments however, do not have this disadvantage.

The Ausfülirungsbeispiel according to FIG. 11 is in essentially the same circuit arrangement as is the case according to FIG. The field effect transistor FET 6, the solar cell or photocell 12 and the load or load resistance 14 are connected in series with the voltage source switch or with the voltage source 2 via the switch 4. As in the circuit of FIG. 10, there is a switch which selectively controls the gate / control electrode or the emitter of the field effect transistor FET 6 with the Connection point between the solar cell 12 and the load or the load resistor 14 connects. Instead of the one shown in Fig. 10 existing switch 15 is the load or the load counter t and 14 a transistor 122 is connected in parallel. This Transistor 122 is controlled by an astable multivibrator, which is composed of the two transistors 124 and 126, i.e. switched on and switched off. The collector of transistor 124 is through a switch I30 and a resistor I32 led to the base of transistor 122. Of the The emitter of the transistor 124 is above a. Switch 134 with the negative terminal of the voltage source 2 in connection.

If in the aforementioned circuit arrangement for closing the power supply switch 4 when the switch 134 is open

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Switch 120 is switched to the gate or the control electrode of the field effect transistor FET 6, then the base of the transistor 122 is supplied with current via a resistor 136, the aforementioned resistor 136 being connected to the collector of the transistor 124, which is held in the blocking state at this point in time is, the same also via the switch 130 and the resistor 132. This, however, the transistor 122 is switched on or brought into the on state in order to short-circuit the load or the load resistor Lk and to make the information memory or the information memory circuit ready for the salivation of the light information . If the switch 13 ^ is now closed to switch on the astable multivibrator I28, the transistor 12'f is switched to the on state, but the transistor 122 is switched to the blocking state, which in turn results in the photoelectric current or the photocurrent from the solar cell or the photocell 12 can flow out to the load or to the load resistor Ik. In this way, however, either the electrical shutter circuit or the exposure warning circuit from FIG. 3 can be controlled and actuated as desired. In this case, the capacitor 16 is charged via the load or the load resistor Lk in such a way that the gate / control electrode voltage of the field effect transistor FET 6 is increased by a voltage drop across the load resistor Lk , with the result that the voltage at the emitter of the transistor also increases. For this reason, any increase in the terminal voltage of the load resistor lh will neither increase the voltage of the capacitor nor hinder the storage of the information.

120

If the switch is now from the gate side of the field effect transistor FET 6. switched to the emitter side of this transistor,

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26 ^ ₀ - ₉ -_ 1.7.1972

then the load resistor 3.4 from the FET 6 is an output current supplied ρ of the energy stored in the capacitor l6 corresponds «With this circuit arrangement, the working range of the field effect transistor FET 6 is considerably expanded, which in turn offers great practical advantages

The circuit according to FIG. 12 is constructed and laid out for the same plug-in as is the case with the circuit according to FIG. A contact of the switch 18 is led to the negative terminal of the voltage source 2, namely via a transistor 140, the base of which is connected to the negative terminal of the voltage source 2 and which is also connected between the switch I30 and the resistor 132.

If the switch 134 is opened and the switch 4 'is closed in this circuit arrangement, the base of the transistors 122 and 140 is supplied with current via the capacitor resistor 136 of the transistor 124, which is in the blocking state at this point in time, but also via switch 13O. But so that the transistors 122 and 140 are switched to the conductive state ₉ whereby - this has already been described above - the load resistor 14 is short-circuited, with the result that the light information is retained or stored as in the previous cases

will. Is closed in the presence of this condition, the switch for turning on the astable multivibrator 128, the transistor is brought 124 into the major chlai3 to stand, then turning off transistors 122 and l40 and transferred into the locked state, which in turn has the consequence that fotoalektrische Current or the photo current from the solar cell or the photo cell 12 flows to the load resistor or to the touch 14 * Because at this point in time the transistor l4 <)

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is subject to a high impedance, ie is in the blocking state ^ the potential of the gate or the control electrode and the emitter of the field effect transistor PET 6 is increased by this amount "If the switch 18 is opened and the switch 11a is closed under this condition, then the The load or the load resistance 1'l from the field effect transistor, the FET 6, is supplied with the entire spa relaxation, which is equal to that of the already stored photoelectric current.

The astable multivibrator 128 used in the exemplary embodiment according to FIG. 12 can be replaced by the astable multivibrator 6 which belongs to the exposure warning device 2k according to FIG. In this case, the transistor is applied to the base 30 switched i ⁿ selectively, a current from the collector of the transistor 62 of the aforementioned astable multivibrator 76, via a switch I50 "in which the same are previously performed functions described and fulfilled. .

0 9xiR3 / 1103 -

Claims (1)

PATENT LAWYERS F.W. HEMMERICH -GERD MÜLLER -C. SIZE 22 2.Jf? - bli - Olympus Optical Co. Ltd., Tokyo / Japan Patent claims: 1. Information storage or information storage circuit for receiving information to be stored, this information memory or this connection storage circuit characterized in that a field effect transistor in series with this device is switched; a capacitor circuit between the gate / the control electrode and the emitter of the field effect transistor is arranged; there is a switch which, at the time of information storage, has a Holding bias between the gate / control electrode and turns on the emitter of the field effect transistor; finally there is a voltage source that supports the The aforementioned circuit is supplied with operating voltage, the collector current of the field effect transistor in such a way is attributed to having the same strength as the stream of the information pick-up device; in the end also the bias voltage or the control voltage between gate / control electrode and emitter of the field effect transistor is held at such a value that the required collector current is generated. ? 0! 3 Γ; m / 1 1 0 ? 22 210 - bh - ■ 29 July 3, 1972 Information storage or information storage circuit according to claim 1,
characterized in that a first switching device is provided, which selectively the gate or the control electrode of the field effect transistor only during the time of information storage connects to the bias voltage source or the control voltage source. Information storage or information storage circuit according to claim 2, characterized in that the information recording device a solar cell or Photocell is that in reverse polarity with a is connected to the first voltage source « Information storage or information storage circuit according to claim 2, characterized in that the information recording device is one The transistor is connected in such a way that its base the current intensity is switched on, that of the input information is equivalent to. Information storage or information storage circuit according to claim 3 »■ ·
characterized in that the field effect transistor with the solar cell or photo cell and the load or load resistance in series is switched; A second switching device is connected in parallel to the solar cell or photocell, which is used when saving the information is opened when the information is displayed but closed « -209883/1103. 22 210 - bra - ζ / ο JI η. J "a - ^ - 6. Information storage or information storage circuit according to claim 2,
characterized in that the field effect transistor is a planar transistor design acts. 7 information memory or information memory circuit according to claim 2,
characterized in that the field effect transistor as a Motalloxydtransistor is executed 8 »Information storage or information storage circuit according to claim J ₁
characterized in that the first switching device in terms of circuitry between the Arranged collector and the emitter of the field effect transistor is" 9 · Information storage or information storage system according to claim 8 _t
characterized ₉ that a second bias source is connected in series with the first switching device in the same Polarity, as in the case of the first voltage source Case is. Iff, information memory or information storage circuit according to Claim 3
characterized in that the field effect transistor, the solar cell or the photocell and the load or the load resistance with represents first 'voltage source are connected in series®; »Ine Control circuit is provided, which is composed 209B83 / 1103 22 2X9 - on. - 34 O ₀ O ₀₀ PQ 3.7.1972 223 3259 .- a * - ■. a second switch · that selects the anode of the solar cell or photocell either with the gate / control electrode or the emitter of the field effect transistor connects; Finally there is also an astable multivibrator that only needs the second Trnasistor locks during information storage. 10, information memory or information storage circuit according to claim 3 »
characterized in that the field effect transistor, the solar cell or photocell and the load or load resistance with the first bias source connected in series; a diode connected in series with the solar cell or the photocell is, - with blocking_direction to the solar cell or photocell; A second switching device is available, which can either be the anode of the solar cell or the photocell switches either to the gate / the control electrode or to the emitter of the field effect transistor; in the end a third switching device is provided which during the information storage by the load or divert the current flowing through the load resistor en has 12. Information memory or information storage circuit according to claim 5t
characterized in that a third transistor is connected in series with the first switching device, but a second transistor is connected in parallel with the load or the load resistor; a control circuit with an astable multivibrator is available ■ 2 0988 3 "/ 1103 - Up - Ott 2233259 and turns off the second and third transistors only at the time of information storage. 13 information storage or information storage circuit according to claim 1,
characterized in that an electric shutter drive belongs to the load or load, with a capacitor, which at the time of the information output from the collector current of the field effect transistor is charged while adjusting the shutter speed or the shutter speed in accordance with the time required for the capacitor to charge. 14 «Information memory or information storage circuit according to claim 13»
characterized in that an exposure warning switch is also added to the load or stress belongs, with an astable multivibrator circuit for generating pulses of a predetermined Pulse width, which corresponds to the largest time unit in seconds, di @ sur elimination of a blurring effect when the shutter release button is pressed by hand is required; There is a circuit for generating pulses, the pulse width of this Impulses, i.e. the given impulse width of these impulses, corresponds to the smallest standard time value in seconds required to prevent overexposure is; there is also a circuit for comparing the output signal θ from the astable multivibrator circuit and from the pulse generator circuit with the shutter operating pulses from the electric shutter drive; Finally a device is provided for determining the correct exposure time from the output - Signals of the aforementioned comparator. - End - 209R83 / 1103