DE2218596A1 - Circuit for electrical switching and an arrangement for diode elements in conductor selection matrices - Google Patents

Description

dr. ing. H. NEGENDANK · dipping. H. HAUCK Dipl.-Phys. W. SCHMITZ

:> Hamburg.München spL-ING. W. WEHNERT

DELIVERY ADDRESS: HAM BURG 36 NEUERWALl,

TISL. 36 74 28 AND 36 4113 OWENS-ILLINOIS, INGo IKIEGH, NEGEDAPATENT HAMBURG

Toledo, Ohio 43601 (USA)

MUNICH 15 MOZARTSTR. 33

TEL. 3 3803 SO

TELEGH. NEGEDAPATENT MUNICH

Hamburg, April 14, 1972

Circuit for electrical switching and an arrangement for diode elements in conductor selection matrices

The present invention relates to improvements in Diode pulse circuits for matrices used for addressing Ladders are used, particularly in gas discharge display and storage panels of the type described in US Pat. No. 3,499,167. patented March 3, 1970 and described in U.S. Patent 3,559,199 will. U.S. Patent 3,499,167 shows a gas discharge display / memory assembly in which a pair of rectangular glass panels are assembled with a space between them, the glass plates dielectrically coated, Carry multiple conductive areas in row and column conductor areas in the active field area that contain straight conductors, which protrude parallel to the longitudinal direction of the panels. The plates are connected by a sealing spacer, whereby their long axes are perpendicular to each other and the conductor ends protrude beyond the point where the plates are opposite both edges of the plates are arranged with a gap.

The invention is directed to improvements in diode pulse systems and circuitry incorporated in a diode resistor addressing matrix are used as in the previous application P 21 36 412.5, filed on July 21, 1971, and in the DT-OS 2,136,333. According to the present invention the selection diodes in such a selection circuit do not connected via a transformer winding to, for example, the

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Reduce impedance for stable behavior. It becomes a non-inductive switching circuit in the form of a Thyristor or transistor specified, with a circuit for applying a small control signal to the control electrode of the switch. These non-inductive switches are in fact stand-alone power switching arrangements so that the Repetition frequencies are much faster, with the

at

power rates better than / older transformer circuits or as in the active semiconductor pulse circuits used in such matrix selection systems. In addition, the circuits can be converted to pulse generator circuits of the negative and positive types.

The above-described and other objects, as well as advantages and features of the invention, will become apparent with reference to the following Explanations and drawings, for example, explained in more detail.

Figure 1 illustrates a basic diode resistor address / selection circuit or matrix element for a conductor either in a row or column ladder area, as in the previously mentioned prior notification P 21 36 412.3, submitted on July 21, 1971.

Fig. 2A shows a systematic arrangement in which the group selection diodes and the bit selection resistors are connected to the left edge of a field plate member for the row conductors and utility bypass diodes on the right edge of the Ftldes are arranged, and where the column selection diodes and dl · column selection resistors on the upper plate edge in series with the pulse circuits, while the utility bypass diodes for the column conductors are on the lower plate, as shown in the aforementioned DT-OS 2 136 333.

Figure 2B illustrates the selection matrix for a row or column conductor area or corresponding parts thereof

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Pig. 3 A and Pig. 3 B represent positive and negative thyristor pulse generators for the diodes according to the invention.

Figures 4A and 4B show the positive and negative Transistor pulse generator for the diodes according to the invention.

Fig. 5 A and Fig. 5 B show the transistor pulse feeder Sehalt- » circles for pulsing the corresponding matrix resistances in the selection matrices.

In Fig. 2A, the switch field P is a display field that is off Row and column conductors supporting plates RS and CS, the row conductors 50 and the column conductors, respectively 51 wear. The conductors are made with an appropriate dielectric or insulating layer or sheet 52 and 53 coated and the panels are spaced apart by sealing spacers 54 to form a thin To form a gas chamber in which a working gas or a gas dependent on electrical conditions is kept under pressure will. It should be noted that other media which are electrically effective can be used, but the preferred embodiment, which is described here uses a gas as a working medium between the diagonal conductor areas 50 and Selection signals are applied to the selection matrices, as indicated by corresponding input arrows 62 and 63 is and can, for example, form a computer.

One or more row conductors are selected by a row selection circuit 60 and one or more column conductors are selected by a column selection circuit 61, where each with the supply voltages from sources 10R and 10C works that are connected to a common ground reference level. It should also be emphasized that the positive and negative conditions can be reversed, so that a positive source of supply and selection matrix for that Columns can be used according to the opposite polarity Supply source and selection matrix for the row ladder is used.

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In Pig. 1, the basic matrix circuit element is the same circuit as used in the previous one Pre-registration is described and as shown there, the whole selection and addressing system is based on the waveform the supply voltage from the supply voltage generator 10, the rectangular, sinusoidal, trapezoidal or in some other way provides shaped, periodic waveforms. As in the pre-registration mentioned above has been described, the voltage from the supply generator 10 can be half the supply voltage, which is necessary for the cubicle, with the remaining Half with the 180 ° phase or with opposite polarity supply the other conductors in the opposite arrangement can. Thus, half of the ve ^ spaTimSig is given to the row ladder and one half of the supply voltage in a 180 ° phase relationship placed on the column conductor of the switch panel.

Resistor R and diodes D1 and D2 represent a matrix selection or multiplex element, with a node N. Such an element for each field-conductor line is shown, the field-ladder lines with their corresponding Nodes N are connected (see. Fig. 2 B). The terminal of the resistor R facing away from the node N is with subjected to a voltage pulse of an order of magnitude, which, in connection with the supply voltage, is sufficient that To influence discharge conditions of a discharge position in switch field C, as it is through the selected row conductor and the selected column ladder is set. Such a voltage is derived from a DC voltage source VP, according to the embodiment of FIG. 1 with its positive output terminal via the collecting conductor G to the collector electrode of the transistor 371 is connected, the emitter electrode of the transistor T1 being mainly connected to the common conductor A1 is connected, which in turn is connected to a number of resistor leads for selection or pulse groups of Resistors is connected. For example, as shown in Figure 2B, all of the resistors are in the vertical first row of

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The vertical row of the selection matrix is supplied with pulses by the busbar A1 and accordingly in the second row by the busbar A2 and so on up to the last row of resistors. As shown, the high-voltage supply VP can generally be used to supply all resistance pulse generators. The transistors 071 are normally not conductive and are switched to the conductive state by a pulse from the resistor selection transformer coupler 20, the voltage at the secondary winding 20S of the transformer being developed via the resistor 21 and the base-emitter electrode of the transistor 11 is applied, as a result of which this transistor becomes conductive. In the conductive state of the transistor 11, the full voltage of the source + VP is applied to the connection of the resistor E1 and, if there is no low impedance at the node, this voltage will appear at the node N, which will rise and will therefore also affect the switching field. Head X put on. As also from the drawing Pig. 1, the diode D1 is polarized in such a way that it represents a low impedance for the voltage from the source VP.

In accordance with the present invention, a non-inductive switching arrangement is installed in this conduction path, to have either a high impedance or a very low impedance, thereby adding the voltage that occurs at node H, with the supply voltage to enable which is at common point # 1 in this circuit. It should be noted that this lead is the anode of all Diodes D2 is common for the purpose of providing the supply currents adapt, as it is described in more detail in the above-mentioned prior application, in dar sit as a supply bridging diode is designated.

A number of different types of circuits can be connected between the common conductor B and the common point «t, as in the SIg. 3 A, 3 B _1, 4 A and 4 B is shown, the circuit according to Hg. 3 B corresponding to the circuit of FIG. In the present case, the anode is the thyristor (SCR) with the Samuel line B and its Satlioä *

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connected to the common point or the collective line o \ . A switch-on network contains a voltage divider, which consists of the resistors BA and HB, their common connection point I being connected to the gate electrode G- of the thyristor (SGR). A "speed-up" capacitor C is parallel to the resistor RA.

When the voltage at node H begins to rise as a result of the conductive transistor T1, the same voltage also begins to rise at point (or on the common conductor) B and is present via the resistor RA and the capacitor C at the gate electrode G- of the thyristor . This small increase in voltage is sufficient to trigger or switch on the thyristor and makes it possible for it to carry full current so that the voltage at node N does not increase any further, and in this way no voltage increase at switch field conductor X, which is connected to node N is connected, takes place. However, so that the voltage that occurs at node N does not drop to zero at the same time or shortly before (but not after) the switching on of the transistor T1 and thus this voltage does not fall on the switch panel conductor, for example the selection of a special conductor X _{1 of} the is connected to the node N, a voltage pulse is fed to the gate electrode Gr of the thyristor, ura to avoid that it comes into the conductive state. As a result, from the point in time at which the thyristor gate is biased again by this voltage pulse, the voltage that occurs at node H is also applied to the switchgear panel conductor. Sb should be emphasized here, as was shown above, that the voltage which occurs at node N is added to the voltage from supply generator 10 at this time. The selection signal, which comes from the Bleek 99 (see Pig. 2 B) and can be referred to as the "thyristor or traneietor-separated Sohalt selection signal", is fed to the transformer 25 «, the Dlod« D3, which is in series with the secondary winding 25S, keeps unwanted polarity signals from the gate of the thyristor.

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It is easy to see that all other diodes D1, their Cathodes are connected to the collective conductor B, on corresponding Way can be biased again and, in the event that the resistors R1 are pulsed in the manner described above have been, the voltage at the nodes N will therefore also have risen in this time interval, accordingly the sum of the voltage VP and the voltages from the supply generator 10. The supply generators VS could be synchronous in terms of their voltage with the application of the pulse voltage to the transistor T1 and to the thyristor be regulated, although this is not shown here.

Apart from the polarity conditions, the circuit according to FIG. 3 A is with respect to the remaining parts with the circuit, that is shown in Fig. 3B is identical. It should be noted that the diodes D1 and D2 are oppositely directed and in this case the anode of the thyristor is connected to the common point or the common conductor <K, while the The cathode of the thyristor is connected to the anode of the diode D1. An arrangement with the typical components, Values and type designations are shown in Figures 3A and 3B; However, this information is only intended as an illustration, but not to be understood as an exclusive implementation option.

Although the preferred embodiment of the non-inductively isolated switch arrangements are shown in FIGS. 3A and 3B, the thyristor switches can also be replaced by transistors, as shown in FIGS. 4A and 4B. Fig. 4A shows a transistor pulse generator with negative pulse and Fig. 4B shows a transistor pulse generator with positive pulse. In Fig. 4A, the emitter of transistor switch 70 is with the anode of diode D1 and its collector with the common point or the collective line oC. A bias source 71 (VBB) is required to normally conduct biasing this transistor, the bias being applied across the secondary winding 25S ^{1 of} the selection transformer 25 and across a small current limiting resistor 72.

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To in this embodiment example the ladder or the ladder rail B, a pulse voltage similar to the embodiment of JPig. 3 A in the secondary winding 25S is induced, used to overcome the bias voltage 71 and to make the transistor switch 70 non-conductive and thus represents a high impedance at the collective line B, to which all the diodes D1 are also connected, which in turn enable the voltage to be applied to any corresponding one Junction on the panel conductor that connects to this Point is connected to create.

It should be noted that the transistor circuits, as in the case of the thyristor circuits, also correspond accordingly are reversible, which makes it possible to use npn transistors use. In addition, both of these types of circuits act as isolated switches. The positive and negative resistance pulse circuits, those in Pig. 5 A and 5 B shown are essentially identical with the addition of should be that the transistors in both circuits are of the npn type, but also of the pnp type, or together in may be complementary circuit arrangements to make the negative and positive pulse generator symmetrical. However, the transformers have secondary windings that are wound or are connected, or that pulse signals of their own polarity are induced in them in such a way that they are sent to the Base circuits of the transistors can be applied in order to make them conductive in the time interval of the said pulse signals do.

The invention is not limited to the embodiments shown in the figures. Rather, there is a number in it obvious variations that are within the scope of the following claims.

Claims ;

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Claims (9)

Patent claims: An arrangement for generating voltages for operating a load circuit comprising row and column conductor regions, wherein a first selection matrix is provided for the selection of the row conductors and a second selection matrix is provided for the selection of the column conductors, each of these selections -Matrix contains a number of multiplex elements in which each of these multiplex elements has a common node which is connected to a conductor in one of the mentioned areas and has at least three electrical leads to said nodes, with an ohmic resistance element in one of these feed lines and means for applying a pulse voltage between the connection of said resistance element facing away from the node and a common point, further unilaterally conductive means in each of the other feeds of said multiplex element, one of said unilaterally conductive means between said Node and the mentioned gem lone point is laid, characterized by a non-inductive switching means between the end of said other unilaterally conductive means and said common point, and circuit means for applying a switching signal to said non-inductive switching means to achieve that one high resistance during the time in which said switching signal occurs. 2. Arrangement according to claim 1, characterized by means, which is connected to said non-inductive switching means, for sensitively changing the voltage at said node in order to put the non-inductive switching arrangement in the conductive state. 209845/1182 3. Circuit arrangement according to claim 2, characterized in that in said non-inductive switching arrangement a thyristor / and wherein the means for sensitive change of the voltage at said node contains a voltage divider network which is connected in parallel with the thyristor, wherein the center tap of said voltage divider is connected to the gate electrode of said thyristor. 4. Arrangement according to claim 3, characterized by a capacitor which is connected between the anode and the gate electrode of said thyristor. 5. Arrangement according to claim 4, characterized in that a transformer is contained in said circuit means for applying a switching signal and diode means which connect the secondary winding of said transformer to said gate electrode. 6. Arrangement according to Anepruch 1, characterized in that in said non-inductive switching means a transistor, biasing means for normally biasing said transistor to keep it in the conductive state with low resistance, so that the voltage applied to the named resistance element is applied, not aa named node occurs, and contains said circuit means for applying a switching voltage which overcomes said biasing means in order to bring said transistor into the non-conductive state , which is high resistance in this state, so that the pulse voltage applied to said resistance element occurs at said node. 7. Arrangement according to at least one of claims 1 to 6, characterized in that said row and column conductors are formed by corresponding dielectrically coated conductive areas on a Gaeantladungs-Schaltfeld, and that said system is a voltage source for a periodic supply voltage includes, for at least one of the conductive areas on said switching 209845/1182 - 11 - field, said common point being through an output terminal is formed at said voltage source for a periodic supply voltage. 8. An arrangement according to at least one of claims 1 to 7 " characterized " in that the operating voltage which is applied to said row conductors is of opposite, relative polarity to the voltage which is applied to said column conductors, and that said non-inductive switching means are formed by semiconductors of the same type. 9. Arrangement according to claim 1 or 2, characterized . that the non-inductive switches are npn-X transistors. 209845/1182 Blank page