DE2149038C2 - Halbleiterbauelement und Verfahren zum Betrieb des Halbleiterbauelements - Google Patents
Halbleiterbauelement und Verfahren zum Betrieb des HalbleiterbauelementsInfo
- Publication number
- DE2149038C2 DE2149038C2 DE2149038A DE2149038A DE2149038C2 DE 2149038 C2 DE2149038 C2 DE 2149038C2 DE 2149038 A DE2149038 A DE 2149038A DE 2149038 A DE2149038 A DE 2149038A DE 2149038 C2 DE2149038 C2 DE 2149038C2
- Authority
- DE
- Germany
- Prior art keywords
- external connection
- thyristor
- transistor
- semiconductor component
- partial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 238000000034 method Methods 0.000 title claims description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- KGNDCEVUMONOKF-UGPLYTSKSA-N benzyl n-[(2r)-1-[(2s,4r)-2-[[(2s)-6-amino-1-(1,3-benzoxazol-2-yl)-1,1-dihydroxyhexan-2-yl]carbamoyl]-4-[(4-methylphenyl)methoxy]pyrrolidin-1-yl]-1-oxo-4-phenylbutan-2-yl]carbamate Chemical compound C1=CC(C)=CC=C1CO[C@H]1CN(C(=O)[C@@H](CCC=2C=CC=CC=2)NC(=O)OCC=2C=CC=CC=2)[C@H](C(=O)N[C@@H](CCCCN)C(O)(O)C=2OC3=CC=CC=C3N=2)C1 KGNDCEVUMONOKF-UGPLYTSKSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 229940125833 compound 23 Drugs 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/7302—Bipolar junction transistors structurally associated with other devices
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB4743270 | 1970-10-06 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2149038A1 DE2149038A1 (de) | 1972-04-13 |
| DE2149038C2 true DE2149038C2 (de) | 1982-06-24 |
Family
ID=10444948
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2149038A Expired DE2149038C2 (de) | 1970-10-06 | 1971-10-01 | Halbleiterbauelement und Verfahren zum Betrieb des Halbleiterbauelements |
Country Status (6)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3896476A (en) * | 1973-05-02 | 1975-07-22 | Mitsubishi Electric Corp | Semiconductor switching device |
| US4083063A (en) * | 1973-10-09 | 1978-04-04 | General Electric Company | Gate turnoff thyristor with a pilot scr |
| JPS5297684A (en) * | 1976-02-12 | 1977-08-16 | Mitsubishi Electric Corp | Semiconductor element |
| GB1586171A (en) * | 1977-01-31 | 1981-03-18 | Rca Corp | Gate turn-off device |
| US4673844A (en) * | 1985-09-30 | 1987-06-16 | Texas Instruments Incorporated | Starter circuit for a fluorescent tube lamp |
| AU2002241256A1 (en) * | 2002-02-28 | 2003-09-09 | Stmicroelectronics S.R.L. | Bipolar transistor structure |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3265909A (en) * | 1963-09-03 | 1966-08-09 | Gen Electric | Semiconductor switch comprising a controlled rectifier supplying base drive to a transistor |
| DE1464960A1 (de) * | 1963-09-03 | 1969-08-28 | Gen Electric | Halbleiter-Schalter |
| US3590339A (en) * | 1970-01-30 | 1971-06-29 | Westinghouse Electric Corp | Gate controlled switch transistor drive integrated circuit (thytran) |
| JPS5118811B2 (US07413550-20080819-C00001.png) * | 1972-08-01 | 1976-06-12 |
-
1970
- 1970-10-06 GB GB4743270A patent/GB1303338A/en not_active Expired
-
1971
- 1971-09-15 US US00180631A patent/US3725752A/en not_active Expired - Lifetime
- 1971-10-01 DE DE2149038A patent/DE2149038C2/de not_active Expired
- 1971-10-05 FR FR7135758A patent/FR2110240B1/fr not_active Expired
- 1971-10-05 SE SE7112556A patent/SE375190B/xx unknown
- 1971-10-06 JP JP7797871A patent/JPS5423228B1/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| FR2110240A1 (US07413550-20080819-C00001.png) | 1972-06-02 |
| SE375190B (US07413550-20080819-C00001.png) | 1975-04-07 |
| JPS5423228B1 (US07413550-20080819-C00001.png) | 1979-08-11 |
| GB1303338A (US07413550-20080819-C00001.png) | 1973-01-17 |
| DE2149038A1 (de) | 1972-04-13 |
| US3725752A (en) | 1973-04-03 |
| FR2110240B1 (US07413550-20080819-C00001.png) | 1977-04-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8328 | Change in the person/name/address of the agent |
Free format text: KOHLER, M., DIPL.-CHEM. DR.RER.NAT., 8000 MUENCHEN GLAESER, J., DIPL.-ING., PAT.-ANW., 2000 HAMBURG |
|
| 8339 | Ceased/non-payment of the annual fee |