DE2144018A1 - Verfahren zum dotieren von halbleitern mittels diffusion - Google Patents

Verfahren zum dotieren von halbleitern mittels diffusion

Info

Publication number
DE2144018A1
DE2144018A1 DE2144018A DE2144018A DE2144018A1 DE 2144018 A1 DE2144018 A1 DE 2144018A1 DE 2144018 A DE2144018 A DE 2144018A DE 2144018 A DE2144018 A DE 2144018A DE 2144018 A1 DE2144018 A1 DE 2144018A1
Authority
DE
Germany
Prior art keywords
layer
nickel
diffusion
boron
semiconductor body
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2144018A
Other languages
German (de)
English (en)
Inventor
Josef Dipl Ing Chem Kredl
Thomas Dipl Chem Vlasak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC BROWN BOVERI and CIE
BBC Brown Boveri AG Switzerland
Original Assignee
BBC BROWN BOVERI and CIE
Brown Boveri und Cie AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC BROWN BOVERI and CIE, Brown Boveri und Cie AG Switzerland filed Critical BBC BROWN BOVERI and CIE
Publication of DE2144018A1 publication Critical patent/DE2144018A1/de
Pending legal-status Critical Current

Links

Classifications

    • H10P14/46—
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/32—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron
    • C23C18/34—Coating with nickel, cobalt or mixtures thereof with phosphorus or boron using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
    • H10P95/00—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemically Coating (AREA)
DE2144018A 1971-08-18 1971-09-02 Verfahren zum dotieren von halbleitern mittels diffusion Pending DE2144018A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1213471A CH569515A5 (enExample) 1971-08-18 1971-08-18

Publications (1)

Publication Number Publication Date
DE2144018A1 true DE2144018A1 (de) 1973-08-02

Family

ID=4380201

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2144018A Pending DE2144018A1 (de) 1971-08-18 1971-09-02 Verfahren zum dotieren von halbleitern mittels diffusion

Country Status (2)

Country Link
CH (1) CH569515A5 (enExample)
DE (1) DE2144018A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2395325A1 (fr) * 1977-06-22 1979-01-19 Silec Semi Conducteurs Procede de metallisation par du nickel d'une plaquette de silicium
WO2010099862A3 (de) * 2009-03-02 2010-12-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und verfahren zur simultanen mikrostrukturierung und dotierung von halbleitersubstraten

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2395325A1 (fr) * 1977-06-22 1979-01-19 Silec Semi Conducteurs Procede de metallisation par du nickel d'une plaquette de silicium
WO2010099862A3 (de) * 2009-03-02 2010-12-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Vorrichtung und verfahren zur simultanen mikrostrukturierung und dotierung von halbleitersubstraten
US20120058588A1 (en) * 2009-03-02 2012-03-08 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Device and method for simultaneously microstructuring and doping semiconductor substrates
CN102395445A (zh) * 2009-03-02 2012-03-28 弗兰霍菲尔运输应用研究公司 半导体基底同时微结构化和掺杂的设备和方法

Also Published As

Publication number Publication date
CH569515A5 (enExample) 1975-11-28

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Legal Events

Date Code Title Description
OHW Rejection