DE2143808A1 - Alloying gold - with nickel, iron and/or cobalt for gold and aluminium bonding - Google Patents

Alloying gold - with nickel, iron and/or cobalt for gold and aluminium bonding

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Publication number
DE2143808A1
DE2143808A1 DE2143808A DE2143808A DE2143808A1 DE 2143808 A1 DE2143808 A1 DE 2143808A1 DE 2143808 A DE2143808 A DE 2143808A DE 2143808 A DE2143808 A DE 2143808A DE 2143808 A1 DE2143808 A1 DE 2143808A1
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Germany
Prior art keywords
gold
substrate
cobalt
nickel
iron
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DE2143808A
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German (de)
Inventor
Hans-Peter Dr Kehrer
Andreas Dr Meyer
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Siemens AG
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Siemens AG
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Priority to DE2143808A priority Critical patent/DE2143808A1/en
Publication of DE2143808A1 publication Critical patent/DE2143808A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
    • H01R4/58—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation characterised by the form or material of the contacting members
    • H01R4/62—Connections between conductors of different materials; Connections between or with aluminium or steel-core aluminium conductors
    • H01R4/625—Soldered or welded connections
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K5/00—Gas flame welding
    • B23K5/12—Gas flame welding taking account of the properties of the material to be welded
    • B23K5/16—Gas flame welding taking account of the properties of the material to be welded of different metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85203—Thermocompression bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Wire Bonding (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

Electrically conductive junction Au and al, contacts, e.g. for transistors and integrated circuits between semi-conductor systems and casing, prepd. by ultrasonic- or heat-compression welding, contains Au alloyed with 3-7 (5) wt.% Ni, Fe and/or Co, at least at junction. Pref. the Au alloy is applied to substrate by electro- or chemical deposition, vaporising or spraying), to a substrate contg. Ni, Fe and/or Co. Before ultrasonic - or heat-compression welding, the Au-coated substrate is tempered, esp. >=1 hr. at 500 degrees C in an N2-H2 atmos. (causing diffusion of Ni, Fe and/or Co into Au layer). Alloying reduces or prevents loss in strength and rise in resistance with heat-ageing.

Description

Elektrisch leitfähige Verbindung zwischen den Metallen Gold und Aluminium Die Erfindung bezieht sich auf eine elektrisch leitfähige Verbindungsstelle zwischen den Metallen Gold und Aluminium, die nach dem Verfahren der Ultraschall- bzw. der Thermokonipressionsschweißung hergestellt ist.Electrically conductive connection between the metals gold and aluminum The invention relates to an electrically conductive connection point between the metals gold and aluminum, which after the process of ultrasound or the Thermoconipression welding is made.

Elektrisch leitfähige Verbindungen zwischen Goldschichten, und Aluminiumdrähten bzw. Aluminiumschichten und Golddr#hten sind bekannt. Dabei wird der Aluminium- bzw. Golddraht mit der Hilfe eines Hartmetallstempels auf die Gold- bzw.Electrically conductive connections between gold layers and aluminum wires or aluminum layers and gold wires are known. The aluminum or gold wire with the help of a hard metal stamp on the gold or

Aluminiumschicht aufgepreßt, wobei die Gold- bzw. Aluminiumschicht etwa 1 Minute lang auf 3500 C erhitzt wird. Bei der Prüfung solcher, durch Thermokompressionsschweißung hergestellter Verbindungen zwischen Gold und Aluminium konnte festgestellt werden, daß durch thermische Alterung bedingt, an der Aluminium-Gold-Kontaktierung ein Festigkeitsabfali von etwa 30 % auftritt, der von einem gleichzeitigen anomalen Anstieg des elektrischen Übergangswiderstandes an der Kontaktierstelle begleitet ist. Dieser Festigkeitsabfall bzw.Aluminum layer pressed on, with the gold or aluminum layer heated to 3500 C for about 1 minute. When testing such, by thermocompression welding established connections between gold and aluminum could be determined, that due to thermal aging, there is a decrease in strength at the aluminum-gold contact of about 30% occurs, that of a simultaneous abnormal increase in electrical Transition resistance at the contact point is accompanied. This drop in strength respectively.

Widerstandsanstieg beeinträchtigt die Zuverlässigkeit und die Lebensdauer von Bauelementen, wie beispielsweise Transistoren, die solche elektrisch leitfähigen Aluminium-Gold-Verbindungsstellen aufweisen.An increase in resistance affects the reliability and the service life of components, such as transistors, which are electrically conductive Have aluminum-gold junctions.

Eine Aufgabe der Erfindung ist es, ein Verfahren anzugeben, durch das der bei Aluminium-Gold-Kontaktierungen, die nach dem Verfahren der Ultraschall- bzw. Thermokompressionsschweißung hergestellt sçurden, infolge thermischer Alterung auftretende Festigkeitsabfall bzw. Widerstandsanstieg vermieden bzw. beseitigt werden kann.An object of the invention is to provide a method by that of aluminum-gold contacts made using the ultrasonic or thermocompression welding, as a result of thermal aging Any decrease in strength or increase in resistance can be avoided or eliminated can.

Diese Aufgabe wird durch eine elektrisch leitfähige Verbindungsstelle gelöst, die nach dem Verfahren der Ultraschall- bzw. Thermokompressionsschweißung hergestellt ist und dadurch gekennzeichnet ist, daß das Gold wenigstens an der Verbindungsstelle mit Nickel, Eisen oder Kobalt legiert ist. Vorzugsweise ist das Gold mit 3 bis 7 Gew.-% Nickel, Eisen oder Kobalt legiert.This task is performed by an electrically conductive connection point solved, manufactured using the ultrasonic or thermocompression welding process is and is characterized in that the gold at least at the junction is alloyed with nickel, iron or cobalt. Preferably the gold is from 3 to 7 % By weight nickel, iron or cobalt alloyed.

Der durch die Erfindung erzielbare Vorteil besteht insbesondere darin, daß der durch thermische Alterung an elektrisch leitfähigen Verbindungsstellen zwischen den Metallen Gold und Aluminium auftretende Festigkeitsabfall und der anomale Widerstandsanstieg vermieden werden. Auf diese Weise ist es möglich, die Zuverlässigkeit und die Lebensdauer von Bauelementen mit elektrisch leitfähigen Verbindungsstellen zwischen Aluminium und Gold zu erhöhen.The advantage achievable by the invention consists in particular in that the by thermal aging at electrically conductive connection points between the drop in strength and anomalous increase in resistance that occurs in the metals gold and aluminum be avoided. In this way it is possible to increase the reliability and the service life of components with electrically conductive connection points between aluminum and increase gold.

Weitere Einzelheiten der Erfindung gehen aus der Beschreibung bevorzugter Ausführungsbeispiele der Erfindung und ihrer Weiterbildungen hervor.Further details of the invention are more preferred from the description Embodiments of the invention and its developments.

Fig. 1 zeigt in schematischer Darstellung eine nach dem Verfahren der Thermokompressionsschweißung hergestellte elektrisch leitfähige Verbindungsstelle.Fig. 1 shows a schematic representation of one according to the method electrically conductive connection point produced by thermocompression welding.

Die Kontaktierung von z.B. Transistoren und integrierten Schaltkreisen zwischen Halbleitersystem und Gehäuse erfolgt meistens durch Ultraschall- bzw. Thermokompressionsschweißung unter Verwendung von Gold oder Aluminiumdrähten. Die Verbindungsstellen auf dem Halbleitersystem bestehen sonst ausschleßlich aus dünnen Aluminiumschichten, während die gehäuseseitigen Verbindungsstellen aus dünnen Goldschichten bestehen. Bei der Kontaktierung mit Golddraht entsteht also an dem Halbleitersystem eine Aluminium-Gold-Verbindungsstelle, während bei der Kontaktierung mit Aluminiumdraht gehäuseseitig eine Aluminium-.The contacting of e.g. transistors and integrated circuits between the semiconductor system and the housing is usually carried out by ultrasonic or thermocompression welding using gold or aluminum wires. The connection points on the Semiconductor systems otherwise consist exclusively of thin aluminum layers, while the connection points on the housing side consist of thin gold layers. In the Contacting with gold wire creates an aluminum-gold connection point on the semiconductor system, while an aluminum wire is used on the housing side when making contact with aluminum wire.

Gold-Verbindungsstelle entsteht.Gold junction is created.

Es liegt im Rahmen der Erfindung, daß sowohl Aluminiumschichten mit Goldrähten, als auch Goldschichten mit Aluminiumdrähten kontaktiert werden können.It is within the scope of the invention that both aluminum layers with Gold wires, as well as gold layers can be contacted with aluminum wires.

Figur 1 zeigt eine elektrisch leitfähige Verbindungsstelle zwischen einer vergoldeten Vacondurchfübrung und einem Aluminiumdraht. Die Kontaktierung geschieht auf folgende Weise. Ein Aluininiumdraht, der vorzugsweise ein Gew.-# Silizium enthält und einen Durchmesser von 25 bis 30 /um hat, wird durch einen Hartmetallstempel auf das mit einer Goldschieht 2 versehene Substrat 1 aufgepreßt. Der Aluminiumdraht trägt das Bezugszeichen 3. Bei dem die Goldschicht tragenden Substrat handelt es sich vorzugsweise um vergoldetes Vacon einer Durchführung. Das Substrat bzw. das Vaconmetall wird bei der Thermokompression vorzugsweise etwa 1 Minute lang auf 3500 G erhitzt. Der Hartmetallstempel hat eine Temperatur von 250 bis 3000 C.Figure 1 shows an electrically conductive connection point between a gold-plated Vacon feed-through and an aluminum wire. The contacting happens in the following way. An Aluininiumdraht, which is preferably a wt .- # silicon and has a diameter of 25 to 30 / µm, is made by means of a hard metal punch pressed onto the substrate 1 provided with a gold sheet 2. The aluminum wire bears the reference number 3. It is the substrate carrying the gold layer preferably a gold-plated Vacon bushing. The substrate or the Vaconmetall is preferably thermocompressed to 3500 for about 1 minute G heated. The hard metal stamp has a temperature of 250 to 3000 C.

Bei der Kontaktierung einer auf einem Halbleitersystem befindlichen Aluminiumschicht mit Golddraht haben die Bezugszeichen der Figur 1 folgende Bedeutungen. Das Bezugszeichen 1 bezeichnet die vorzugsweise aus Silizium bestehende Halbleiterschicht, auf die die Aluminiumschicht 2 aufgebracht ist. Der Golddraht ist mit dem Bezugszeichen 3 versehen.When making contact with one located on a semiconductor system Aluminum layer with gold wire, the reference symbols in FIG. 1 have the following meanings. The reference number 1 denotes the semiconductor layer, which is preferably made of silicon, on which the aluminum layer 2 is applied. The gold wire is marked with the reference number 3 provided.

Bei der Prüfung solcher, wie oben hergestellter elektrisch leitfahiger Verbindungsstellen stellte sich heraus, daß durch thermische Alterung ein Festigkeitsabfall von ca. 30 % an den Verbindungsstellen zwischen der Gold schicht und dem Aluminiumdraht bzw. zwischen der Aluminiumschicht und dem Golddraht auftritt. Dieser Festigkeitsabfall ist mit einem anomalen Widerstandsan#ieg verbunden.When testing such as manufactured above, electrically conductive Joints found that thermal aging caused a decrease in strength of about 30% at the connection points between the gold layer and the aluminum wire or occurs between the aluminum layer and the gold wire. This drop in strength is associated with an abnormal increase in resistance.

Der FeBtigkeitsabfall bzw. der Widerstandsanstieg wird durch eine Lochbildung in Gold an der Verbindungsstelle zwischen dem Aluminium und dem Gold hervorgerufen. Diese Lochbildung tritt infolge thermischer Alterung während des Betriebes bei Bauelementen mit Aluminium-Gold-Verbindunsstellen auf, weil Gold wesentlich schneller in das Aluminium diffundiert als Aluminium in das Gold (Kirkendalleffekt). Dadurch wird die ursprüngliche Kontaktfläche verkleinert.The drop in fatigue or the increase in resistance is caused by one Hole formation in gold at the junction between the aluminum and the gold evoked. This hole formation occurs as a result of thermal aging during the Operation for components with aluminum-gold connection points, because gold is essential diffuses faster into the aluminum than aluminum into the gold (Kirkendall effect). This reduces the original contact area.

Bei der erfindungsgemäßen elektrisch#leitfähigen Verbindungsstelle werden die Diffusionsverhältnisse dahingehend geändert, daß eine Lochbildung an der Kontaktierstelle zwischen Aluminium und Gold vermieden wird. Dies wird erfindungsgemäß dadurch erreicht, daß anstelle einer Goldschicht bzw. eines Golddrahtes eine Schicht aus einer Goldlegierung bzw. ein Draht aus einer Goldlegierung verwendet wird. Der Legierungszusatz bewirkt, daß die sehr unterschiedlichen Diffusionsgeschwindigkeiten, mit denen Gold und Aluminium ineinanderdiffundieren, ausgeglichen werden. Erfindungsgemäß wird vorgeschlagen, anstelle reinen Goldes eine Goldlegierung zu verwenden, die vorzugsweise 3 bis 7 Gew.-9E, Nickel, Eisen oder Kobalt enthält. Die Goldlegierung kann ebenso 3 bis 7 Gew.-% Eisen und Nickel, 3 bis 7 Gew.#?/o Eisen und Kobalt, 3 bis 7 Gew.-# Nickel und Kobalt oder 3 bis 7 Gew.-# Eisen, Nickel und Kobalt enthalten. Insbesondere werden 5 Gew.- zulegiert.In the case of the electrically conductive connection point according to the invention the diffusion ratios are changed to the effect that hole formation occurs the contact point between aluminum and gold is avoided. This is according to the invention achieved in that instead of a gold layer or a gold wire, a layer made of a gold alloy or a wire made of a gold alloy is used. Of the The addition of an alloy causes the very different diffusion speeds, with which gold and aluminum diffuse into one another, are balanced. According to the invention it is suggested to use a gold alloy instead of pure gold, which preferably contains 3 to 7% by weight, nickel, iron or cobalt. The gold alloy can also be 3 to 7% by weight iron and nickel, 3 to 7% by weight iron and cobalt, 3 to 7 wt .- # nickel and cobalt or 3 to 7 wt .- # iron, nickel and cobalt. In particular, 5% by weight are added.

Die Goldlegierung kann als Schicht entweder galvanisch auf das Substrat abgeschieden oder auf chemische Weise auf das Substrat aufgebracht werden. Die Goldlegierung kann auch auf das Substrat aufgedampft oder aufgestäubt werden.The gold alloy can either be electroplated onto the substrate as a layer deposited or chemically applied to the substrate. The gold alloy can also be vapor-deposited or sputtered onto the substrate.

Gemäß einer Weiterbildung der Erfindung wird ein Verfahren zur Herstellung einer erfindungsgemäßen elektrisch leitfähigen Verbindungsstelle angegeben, bei dem zunächst eine reine Goldschicht auf ein solches Substrat aufgebracht wird, das Nickel, Eisen und/oder Kobalt enthält. Vor der Durchfübrung der Ultraschall - bzw. Thermokompressionsschweißung wird das mit einer reinen Goldschicht versehene nickel-, eisen- und/oder Kobalt haltige Substrat getempert. Es wird vorzugsweise bis zu einer Stunde bei 5000 C in einer Stickstoff-Wasserstoffatmosiihäre getempert. Durch das Tempern vor der Kontaktierung wird bewirkt, daß Nickel, Eisen und/oder Kobalt aus dem nickel-, eisen- und/oder kobalthaltigen Substrat in die Goldschicht diffundieren.According to a development of the invention, a method for production specified an electrically conductive connection point according to the invention, at which first a pure gold layer is applied to such a substrate that Contains nickel, iron and / or cobalt. Before performing the ultrasound - or thermocompression welding is provided with a pure gold layer annealed substrate containing nickel, iron and / or cobalt. It will preferably Tempered for up to one hour at 5000 C in a nitrogen-hydrogen atmosphere. The annealing before contacting causes nickel, iron and / or Cobalt from the nickel-, iron- and / or cobalt-containing substrate into the gold layer diffuse.

Bei dem oben angegebenen Verfahren wird die reine Goldschicht entweder chemisch oder galvanisch auf dem Substrat abgeschiede. Die reine Goldschicht kann auch auf das Substrat aufgedampft oder aufgestäubt werden.In the above procedure, the pure gold layer is either chemically or galvanically deposited on the substrate. The pure gold layer can can also be vapor-deposited or sputtered onto the substrate.

1 Figur 12 Patentansprüche1 Figure 12 claims

Claims (12)

Patentans#r'#che 1. Elektrisch leitfähige Verbindungsstelle zwischen den Metallen Gold und Aluminium, hergestellt nach dem Verfahren der Ultraschall- bzw. Thermokompressionsschweißung, dadurch g e k e n n z e i c h n e t , daß das Gold wenigstens an der Verbindungsstelle mit Nickel, Eisen und/oder Kobalt legiert ist. Patent application 1. Electrically conductive connection point between the metals gold and aluminum, produced using the ultrasonic or thermocompression welding, due to the fact that the Gold alloyed with nickel, iron and / or cobalt at least at the connection point is. 2. Elektrisch leitfähige Verbindungsstelle nach Anspruch 1, dadurch g e k e n n z e i c h n e t , daß das Gold mit 3 bis 7 Gew.-# Nickel, Eisen oder Kobalt legiert ist.2. Electrically conductive connection point according to claim 1, characterized it is noted that the gold with 3 to 7 wt .- # nickel, iron or Cobalt is alloyed. 3. Elektrisch leitfähige Verbindungsstelle nach Anspruch 1, dadurch g e k e n n z e i c h n e t , daß das Gold mit einem oder mehreren der Elemente Eisen, Nickel und Kobalt legiert ist.3. Electrically conductive connection point according to claim 1, characterized It is not noted that gold is associated with one or more of the elements Iron, nickel and cobalt is alloyed. 4. Elektrisch leitfähige Verbindungsstelle nach einem der Ansprüche 1 bis 3, dadurch g e k e n n z e i c h n e t daß der Begierungszusatz insgesamt 3 bis 7 Gew.-#, insbesondere 5#Gew.-# beträgt.4. Electrically conductive connection point according to one of the claims 1 to 3, due to the fact that the desire additive as a whole 3 to 7 wt .- #, in particular 5 # wt .- #. 5. Verfahren nach einem der Ansprüche 1 bis 4, dadurch g e -k e n n z e i c h n e t , daß die Goldlegierung (2) galvanisch auf einem Substrat (1) abgeschieden wird.5. The method according to any one of claims 1 to 4, characterized g e -k e n n z e i c h n e t that the gold alloy (2) galvanically on a substrate (1) is deposited. 6. Verfahren nach einem der Ansprüche 1 bis 4, dadurch g e -k e n n z e i c h n e t , daß die Goldlegierung chemisch auf ein Substrat aufgebracht wird.6. The method according to any one of claims 1 to 4, characterized g e -k e n It does not indicate that the gold alloy is chemically applied to a substrate will. 7. Verfahren nach einem der Ansprüche 1 bis 4, dadurch g e -k e n n z e i c h n e t , daß die Goldlegierung auf das Substrat aufgedampft oder aufgestäubt wird.7. The method according to any one of claims 1 to 4, characterized g e -k e n Note that the gold alloy is vapor deposited or sputtered onto the substrate will. 8. Verfahren zur Herstellung einer elektrisch leitfähigen Verbindungsstelle nach einem der Ansprüche 1 bis 4, dadurch g e k e n n z e i c h n e t , daß sich das Gold auf einem nickel-, eisen- und/oder kobalthaltigem Substrat befindet und daß vor der Durchführung der Ultraschall-bzw. Thermokompressionsschweißung getempert wird.8. Method for producing an electrically conductive connection point according to one of claims 1 to 4, characterized in that the gold is on a nickel-, iron- and / or cobalt-containing substrate and that before performing the ultrasound or. Thermocompression welding annealed will. 9. Verfahren nach Anspruch 8, dadurch g e k e n n s e i c hn e t , daß vor der Kontaktierung durch Ultraschall-bzw. 'Dllermolkompressionsschweißung wenigstens eine Stunde bei 5000 C in einer Stickstoff-Wasserstoffatmosphäre getempert wird.9. The method according to claim 8, characterized in that g e k e n n s e i c hn e t, that before contacting by ultrasound or. '' Dllermol compression welding Annealed for at least one hour at 5000 C in a nitrogen-hydrogen atmosphere will. 10. Verfahren nach Anspruch 8, dadurch g e k e n n z e i c h -n e t , daß das Gold galvanisch auf dem nickel-, eisen-und/oder kobaltbaltigen Substrat abgeschieden wird.10. The method according to claim 8, characterized in that g e k e n n z e i c h -n e t that the gold is electroplated on the nickel, iron and / or cobalt-containing substrate is deposited. 11. Verfahren nach Anspruch 8, dadurch g e k e n n z e i c h -n e t , daß das Gold chemisch auf nickel-, eisen- und/ oder kobalthaltigem Substrat abgeschieden wird.11. The method according to claim 8, characterized in that g e k e n n z e i c h -n e t that the gold is chemically deposited on a substrate containing nickel, iron and / or cobalt is deposited. 12. Verfahren nach Anspruch 8, dadurch g e k e n n z e i c h -n e t , daß das Gold auf das Substrat aufgedampft oder aufgestäubt wird.12. The method according to claim 8, characterized in that g e k e n n z e i c h -n e t that the gold is evaporated or sputtered onto the substrate. LeerseiteBlank page
DE2143808A 1971-09-01 1971-09-01 Alloying gold - with nickel, iron and/or cobalt for gold and aluminium bonding Pending DE2143808A1 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3343250A1 (en) * 1983-11-30 1985-06-05 W.C. Heraeus Gmbh, 6450 Hanau Connector for electronic components
DE3506264A1 (en) * 1984-02-24 1985-08-29 Hitachi, Ltd., Tokio/Tokyo SEMICONDUCTOR DEVICE
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4845543A (en) * 1983-09-28 1989-07-04 Hitachi, Ltd. Semiconductor device and method of manufacturing the same
DE3343250A1 (en) * 1983-11-30 1985-06-05 W.C. Heraeus Gmbh, 6450 Hanau Connector for electronic components
DE3506264A1 (en) * 1984-02-24 1985-08-29 Hitachi, Ltd., Tokio/Tokyo SEMICONDUCTOR DEVICE

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