DE212020000058U1 - Semiconductor module and AC / DC converter unit - Google Patents

Abstract

Semiconductor module with:
a semiconductor device having a plurality of semiconductor elements, a plurality of input / output terminals, a plurality of control terminals, and a sealing resin portion covering the plurality of semiconductor elements;
a first substrate; and
a first connector attached to the first substrate and connected to the control terminals,
wherein the first connector enables relative movement of the control terminals in at least one of a first direction and a second direction that are perpendicular to a thickness direction of the first substrate.

Description

TECHNICAL AREA

The present disclosure relates to a semiconductor module and an AC / DC converter unit.

STATE OF THE ART

Patent Document 1 discloses a semiconductor module that includes a semiconductor device with a semiconductor element that has a switching function. For example, an IGBT chip is used as the semiconductor element. Such a semiconductor device includes input / output terminals for input / output of a current, which is the target of a switching controller, and includes a control terminal into which a control signal is input.

DOCUMENTS OF THE PRIOR ART

PATENT DOCUMENT

Patent document 1: JP-A-2000-299419

OVERVIEW OF THE INVENTION

PROBLEM TO BE SOLVED BY THE INVENTION

A connection between a substrate etc., which forms a semiconductor module and input / output terminals and control terminals, influences the properties of the semiconductor module and the production efficiency.

The present disclosure has been recognized in view of the above circumstances, and it is an object of the present disclosure to provide a semiconductor module and an AC / DC converter unit that can facilitate connection of terminals and can realize a more reliable electrical connection.

MEANS TO SOLVE THE PROBLEM

A semiconductor module provided according to a first aspect of the present disclosure includes a semiconductor device that includes a plurality of semiconductor elements, a plurality of input / output terminals, a plurality of control terminals, and a sealing resin portion that seals the plurality of semiconductor elements, covers a first substrate and a first connector, which is attached to the first substrate and is connected to the control terminals, the first connector, a relative movement of the control terminals in at least a first Direction and / or a second direction that are perpendicular to a thickness direction of the first substrate.

An AC / DC converter unit (“AC / DC converter unit”) provided according to a second aspect of the present disclosure includes an input module into which AC power is input, includes a first semiconductor module formed by the semiconductor module that According to the first aspect of the present disclosure, and an AC output is input from the input module, the first semiconductor module outputting a direct current or direct current power includes a second semiconductor module formed by the semiconductor module according to the first aspect of the present disclosure is provided and inputted with DC power that is output from the first semiconductor module and that outputs DC power, and includes an output module that is input with DC power that is output from the second semiconductor module and that outputs DC power, an output terminal included in the plurality of input / output terminals of a first semiconductor device of the first semiconductor module and an input terminal included in the plurality of input / output terminals of a second semiconductor device of the second semiconductor module, are directly connected to each other, using a first fixing means.

EFFECTS OF THE INVENTION

With the semiconductor module according to the present disclosure, a connection of terminals can be simplified and a more reliable electrical connection can be realized.

Other features and advantages of the present disclosure will become more apparent from a detailed description given below with reference to the accompanying drawings.

Figure list

• 1 12 is an exploded perspective view showing a semiconductor module according to a first embodiment of the present disclosure.
• 2nd 12 is a perspective view showing the semiconductor module according to the first embodiment of the present disclosure.
• 3rd 12 is a perspective view showing the semiconductor module according to the first embodiment of the present disclosure.
• 4th 12 is a plan view showing the semiconductor module according to the first embodiment of the present disclosure.
• 5 12 is a bottom view showing the semiconductor module according to the first embodiment of the present disclosure.
• 6 12 is a front view showing the semiconductor module according to the first embodiment of the present disclosure.
• 7 10 is a side view showing the semiconductor module according to the first embodiment of the present disclosure.
• 8th FIG. 10 is a cross sectional view taken along a line VIII-VIII in FIG 4th .
• 9 FIG. 10 is a cross-sectional view taken along a line IX-IX in FIG 4th .
• 10th 10 is a cross-sectional view taken along a line XX in FIG 4th .
• 11 12 is a plan view showing a semiconductor device of the semiconductor module according to the first embodiment of the present disclosure.
• 12th FIG. 12 is a cross sectional view taken along a line XII-XII in FIG 11 .
• 13 FIG. 10 is a cross sectional view taken along a line XIII-XIII in FIG 11 .
• 14 12 is an enlarged plan view showing a main portion of the semiconductor device of the semiconductor module according to the first embodiment of the present disclosure.
• 15 FIG. 12 is an enlarged cross-sectional view of the main portion along a line XV-XV in FIG 14 .
• 16 FIG. 12 is a circuit diagram showing the semiconductor device of the semiconductor module according to the first embodiment of the present disclosure.
• 17th 12 is a cross-sectional view showing a variation of the semiconductor module according to the first embodiment of the present disclosure.
• 18th Fig. 12 is a plan view showing a variation of the semiconductor device.
• 19th FIG. 12 is a block diagram showing an AC / DC converter unit according to the first embodiment of the present disclosure.
• 20 FIG. 12 is a plan view showing the AC / DC converter unit according to the first embodiment of the present disclosure.
• 21 12 is a plan view showing a main portion of the AC / DC converter unit (AC / DC converter unit) according to the first embodiment of the present disclosure.
• 22 12 is a front view showing a semiconductor module of the AC / DC converter unit according to the first embodiment of the present disclosure.
• 23 FIG. 12 is a cross sectional view of the main portion taken along a line XXIII-XXIII in FIG 21 .
• 24th FIG. 12 is a cross sectional view of the main portion taken along a line XXIV-XXIV in FIG 21 .
• 25th FIG. 12 is a cross sectional view of the main portion taken along a line XXV-XXV in FIG 21 .
• 26 FIG. 12 is a cross sectional view of the main portion taken along a line XXVI-XXVI in FIG 21 .
• 27 FIG. 12 is a cross sectional view taken along a line XXVII-XXVII in FIG 20 .
• 28 FIG. 12 is a cross-sectional view taken along a line XXVIII-XXVIII in FIG 20 .
• 29 FIG. 12 is a plan view showing a first variation of the AC / DC converter unit according to the first embodiment of the present disclosure.
• 30th FIG. 12 is a plan view showing a second variation of the AC / DC converter unit according to the first embodiment of the present disclosure.
• 31 FIG. 12 is a plan view showing a third variation of the AC / DC converter unit according to the first embodiment of the present disclosure.
• 32 12 is a cross-sectional view of a main portion showing an input terminal of a third semiconductor device of the third variation of the AC / DC converter unit according to the first embodiment of the present disclosure.
• 33 12 is a cross-sectional view of a main portion showing an output terminal of the third semiconductor device of the third variation of the AC / DC converter unit according to the first embodiment of the present disclosure.
• 34 FIG. 12 is a plan view showing a fourth variation of the AC / DC converter unit according to the first embodiment of the present disclosure.
• 35 FIG. 12 is a plan view showing a fifth variation of the AC / DC converter unit according to the first embodiment of the present disclosure.
• 36 12 is a plan view showing an AC / DC converter unit according to a second embodiment of the present disclosure.
• 37 12 is a plan view showing a main portion of the AC / DC converter unit according to the second embodiment of the present disclosure.
• 38 FIG. 12 is a cross sectional view taken along a line XXXVIII-XXXVIII in FIG 37 .
• 39 FIG. 12 is a cross-sectional view taken along a line XXXIX-XXXIX in FIG 37 .
• 40 Fig. 4 is a cross sectional view taken along a line XL-XL in 37 .
• 41 10 is a cross-sectional view taken along a XLI-XLI line in FIG 37 .
• 42 FIG. 12 is a cross sectional view taken along a line XLII-XLII in FIG 37 .
• 43 FIG. 12 is a plan view showing a first variation of the AC / DC converter unit according to the second embodiment of the present disclosure.
• 44 FIG. 12 is a plan view showing a second variation of the AC / DC converter unit according to the second embodiment of the present disclosure.
• 45 12 is a perspective view showing a semiconductor module according to a third embodiment of the present disclosure.
• 46 12 is a plan view showing the semiconductor module according to the third embodiment of the present disclosure.
• 47 12 is a front view showing the semiconductor module according to the third embodiment of the present disclosure.
• 48 12 is a perspective view showing a variation of the semiconductor module according to the third embodiment of the present disclosure.
• 49 12 is a plan view showing the variation of the semiconductor module according to the third embodiment of the present disclosure.
• 50 12 is a front view showing the variation of the semiconductor module according to the third embodiment of the present disclosure.

EMBODIMENT OR MODE FOR CARRYING OUT THE INVENTION

In particular, preferred embodiments of the present disclosure are described below with reference to the accompanying drawings.

In the present disclosure, terms such as “first”, “second”, “third”, etc. are used only as terms and are not necessarily intended to give order to the subject described using these terms.

First Embodiment: Semiconductor Module A1 ]

The 1 to 16 show a semiconductor module according to a first embodiment of the present disclosure. A semiconductor module A1 according to the present embodiment includes a semiconductor device B1 , a first substrate 7 , a variety of electronic components 700 , a variety of connection terminals 76 and a variety of first connectors 8th .

1 Fig. 3 is an exploded perspective view showing the semiconductor module A1 shows. 2nd is a perspective view showing the semiconductor module A1 shows. 3rd is a perspective view showing the semiconductor module A1 shows. 4th is a top view of the semiconductor module A1 shows. 5 is a bottom view of the semiconductor module A1 shows. 6 is a front view showing the semiconductor module A1 shows. 7 is a side view showing the semiconductor module A1 shows. 8th FIG. 10 is a cross sectional view taken along a line VIII-VIII in FIG 4th . 9 FIG. 10 is a cross-sectional view taken along a line IX-IX in FIG 4th . 10th 10 is a cross-sectional view taken along a line XX in FIG 4th . 11 is a plan view showing a semiconductor device B1 of the semiconductor module A1 shows. 12th FIG. 12 is a cross sectional view taken along a line XII-XII in FIG 11 . 13 FIG. 10 is a cross sectional view taken along a line XIII-XIII in FIG 11 . 14 Fig. 4 is an enlarged plan view showing a main portion of the semiconductor device B1 of the semiconductor module A1 shows. 15 FIG. 12 is an enlarged cross-sectional view of the main portion along a line XV-XV in FIG 14 . 16 Fig. 10 is a circuit diagram showing the semiconductor device B1 of the semiconductor module A1 shows.

<Semiconductor device B1 >

The semiconductor device is shown below B1 described that the semiconductor module A1 forms or forms part of it. The semiconductor device B1 , this in 11 is a power conversion device on which a plurality of switching elements such as MOSFETs are mounted. The semiconductor device B1 is in a drive source Motors or the like used, or in an inverter component of various electrical devices. The semiconductor device B1 includes a substrate 10th , a conductive element 20 , additional ("auxiliary") conductive elements 21 , a variety of input / output terminals 3A , a variety of tax terminals 3B , a variety of semiconductor elements 40 and a sealing resin section 60 . The variety of semiconductor elements 40 include first switching elements 40A and second switching elements 40B .

In describing the present embodiment, the thickness direction of the first substrate 7 , which will be described later, referred to as a “z direction” for easy description. When describing the present embodiment, the thickness direction of the substrate is correct 10th coincides with the z direction. An x direction that is perpendicular to the z direction corresponds to a first direction. A y direction that is perpendicular to the x direction and the z direction corresponds to a second direction. The semiconductor device B1 has a rectangular shape when viewed in the z direction, ie in a plan view. The y direction corresponds to the transverse direction of the semiconductor device B1 . The x direction corresponds to the longitudinal direction of the semiconductor device B1 . When writing to the semiconductor device B1 becomes the side in the y direction on which a pair of input terminals 31 is arranged as “one side in the y direction”, for easy description. The side in the y direction on which a pair of exit terminals 32 are referred to as the “other side in the y direction”.

Like it in the 11 , 12th and 13 is shown is the conductive element 20 on the substrate 10th arranged. The substrate 10th serves for the conductive element 20 and the variety of semiconductor elements 40 as a bearing element or support element. The substrate 10th has electrically insulating properties. That is the substrate 10th forming material is a ceramic that has a high thermal conductivity. Examples of such a ceramic include, for example, aluminum nitride (AlN). The substrate 10th has a first front surface 11A and a first back surface 12A on. The first face on the front 11A and the first back surface 12A point to opposite sides in the z-direction. The first face on the front 11A points in the z direction to the side on which the conductive element 20 is arranged. The first face on the front 11A is together with the conductive element 20 and the variety of semiconductor elements 40 from the sealing resin section 60 covered. Like it in 5 is shown, the first rear surface is 12A opposite a rear resin surface 62 of the sealing resin portion 60 free.

Like it in the 11 , 12th and 13 is shown is the conductive element 20 on the first front surface 11A of the substrate 10th arranged. The conductive element 20 forms a conduction path between the plurality of semiconductor elements 40 and a wiring substrate attached to the semiconductor device B1 is mounted, together with the additional conductive elements 21 , the pair of entrance terminals 31 and the pair of exit terminals 32 . The conductive element 20 is a metal plate. The material forming the metal plate is copper (Cu) or a copper alloy. The conductive element 20 is on the first front surface 11A joined, using a joining material (not shown) such as a silver paste (Ag paste). A surface of the conductive element 20 can be plated with silver, for example. It should be noted that the conductive element 20 can be a metal foil such as a copper foil instead of the metal plate.

Like it in 11 shown includes the conductive element 20 in the semiconductor device B1 , which is an example, a first conductive section 20A and a pair of second conductive sections 20B . It should be noted that the configuration of the conductive element 20 is not limited to that in the present embodiment and can be freely set based on the number of semiconductor elements 40 that according to the required performance of the semiconductor device B1 is set or determined.

Like it in 11 is shown is the first conductive section 20A on the first front surface 11A arranged on one side in the y direction. The first conductive section 20A has a rectangular shape when viewed in the z direction. A pair of first switching elements 40A is with a surface of the first conductive portion 20A electrically connected or electrically conductive joined to it.

Like it in 11 is shown is on the first front surface 11A the pair of second conductive sections 20B arranged on the other side in the y direction. The pair of second conductive sections 20B is in the y direction from the first conductive portion 20A spaced. Each of the second conductive sections 20B has a rectangular shape when viewed in the z direction. The pair of second conductive sections 20B is spaced from each other in the x direction. Second switching elements 40B are with respective faces of the pair of second conductive portions 20B electrically connected.

Like it in the 11 and 13 is shown is a pair of complementary conductive elements 21 on the first front surface 11A of the substrate 10th arranged. On the first front surface 11A is the pair of complementary conductive elements 21 arranged on one side in the y direction and spaced apart from one another in the x direction, the first conductive portion 20A is arranged in between. Any of the complementary conductive elements 21 has a rectangular shape when viewed in the z direction. The additional conductive elements 21 are metal plates. That is the complementary conductive elements 21 forming material is the same as that of the conductive element 20 . The additional conductive elements 21 are on the first front surface 11A joined or connected using a joining material or connecting material (not shown), such as a silver paste (Ag paste). Areas of the additional conductive elements 21 can be plated with silver, for example. It should be noted that the complementary conductive elements 21 can be a metal foil, such as a copper foil, instead of the metal plates.

Like it in the 11 and 13 shown includes the semiconductor device B1 also a conductive coupling element 29 . The conductive coupling element 29 extends in the x direction and is with the faces of the pair of complementary conductive elements 21 connected, in a state where it is the first conductive portion 20A spanned or bridged. Consequently, the pair of complementary conductive elements 21 electrically connected to each other, via the conductive coupling element 29 . The conductive coupling element 29 is formed by a variety of wires. The material forming the wires is, for example, aluminum (Al). It should be noted that the conductive coupling element 29 instead of a plurality of wires, may be a piece of metal formed by copper, etc., which extends in the x-direction when viewed in the z-direction.

The multitude of input / output terminals 3A includes a pair of entry terminals 31 and a pair of exit terminals 32 . The multitude of input / output terminals 3A are terminals into which a main current, which is the target or the target value of the semiconductor component B1 performed switching is entered, or from which the main current is output. Like it in 11 is the pair of input terminals 31 on the one hand in the y-direction in the semiconductor device B1 arranged. The pair of entrance terminals 31 is spaced apart in the x direction. From the outside, DC power is supplied to the pair of input terminals 31 created or fed. In the semiconductor device B1 is the pair of input terminals 31 formed by the same lead frame, together with the pair of output terminals 32 and the multitude of tax terminals 3B . The material forming the connection frame is copper or a copper alloy. The pair of entrance terminals 31 includes an entrance terminal 31A and an entrance terminal 31B . The entrance terminal 31A and the entrance terminal 31B each contain a pad section 311 and a terminal section 312 .

Like it in 11 is shown is the pad section 311 when viewed in the z direction from the substrate 10th spaced and is from the sealing resin portion 60 covered. Hence, the pair of input terminals 31 from the sealing resin section 60 stored. First connecting wires 51 are with a surface of the pad section 311 connected. The first connecting wires 51 forming material is, for example, aluminum. It should be noted that the area of the pad section 311 can be plated with silver, for example.

The entrance terminal 31A serves as a positive electrode (P-terminal) of the pair of input terminals 31 . Like it in the 11 and 12th are shown are first connecting wires 51 that match the area of the pad section 311 of the entrance terminal 31A are connected to the surface of the first conductive portion 20A connected. Hence, the entrance terminal 31A electrically with the first conductive section 20A connected.

The entrance terminal 31B serves as a negative electrode (N terminal) of the pair of input terminals 31 . Like it in 11 are shown are first connecting wires 51 that match the area of the pad section 311 of the entrance terminal 31B are connected to the surface of one of the complementary conductive elements 21 connected. Hence, the entrance terminal 31B electrically with the pair of complementary conductive elements 21 connected.

Like it in 11 is shown is the terminal section 312 with the pad section 311 connected and facing the sealing resin portion 60 free. The terminal section 312 is used to the semiconductor device B1 to be mounted on a wiring substrate. The terminal section 312 includes a base section 312A and an upright section 312B . The base section 312A is with the pad section 311 connected and extending in the y direction from a first resin side surface 631 (described in detail below) of the sealing resin portion 60 which is arranged on one side in the y direction. Like it in 6 the upright portion extends 312B from a leading end of the base section 312A in the y direction toward the side in the z direction to which the first front surface 11A of the substrate 10th points. Accordingly, the terminal section 312 an L-shape when viewed in the x-direction as in the 7 to 12th is shown.

Like it in 11 shown is the pair of exit terminals 32 on the other hand in the y direction in the semiconductor device B1 arranged. The pair of exit terminals 32 is spaced from each other in the x direction. From the pair of exit terminals 32 AC power (voltage) is obtained, which is obtained by power conversion using the plurality of semiconductor elements 40 . Each exit terminal of the pair of exit terminals 32 includes a pad section 321 and a terminal section 322 . It should be noted that the number of exit terminals 32 is not limited to that of the present embodiment and is free according to the required performance of the semiconductor device B1 can be set or specified.

Like it in 11 is shown is the pad section 321 when viewed in the z direction from the substrate 10th spaced and is from the sealing resin portion 60 covered. Hence, the pair of exit terminals 32 from the sealing resin section 60 stored. Second connecting wires 52 are with a surface of the pad section 321 connected. That the second connecting wires 52 forming material is, for example, aluminum. It should be noted that the area of the pad section 321 can be plated with silver, for example. Like it in 11 is shown is a plurality of second connection wires 52 that match the faces of the pair of pad sections 321 are connected to surfaces of the pair of second conductive portions 20B connected. Hence, the pair of exit terminals 32 electrically with the pair of second conductive sections 20B connected.

Like it in 11 is shown is the terminal section 322 with the pad section 321 connected and facing the sealing resin portion 60 free. The terminal section 322 is used to the semiconductor device B1 to be mounted on a wiring substrate. The terminal section 322 includes a base section 322A and an upright section 322B . The base section 322A is with the pad section 321 connected and extending in the y direction from a first resin side surface 631 (described in detail below) of the sealing resin portion 60 which is arranged on the other side in the y direction. Like it in the 7 to 12th the upright portion extends 322B starting from a front or leading end of the base section 322A in the y direction toward the side in the z direction to which the first front surface 11A of the substrate 10th points. Accordingly, the terminal section 322 an L shape when viewed in the x direction. It should be noted that the terminal section 322 has the same shape as the terminal sections 312 of the pair of input terminals 31 .

Like it in the 11 and 12th is shown is the plurality of semiconductor elements 40 with the first conductive section 20A and the pair of second conductive sections 20B of the conductive element 20 electrically connected or joined to it. Each of the semiconductor elements 40 has a rectangular shape when viewed in the z direction (in the semiconductor device B1 a square shape). In the semiconductor device B1 , which is an example, includes the plurality of semiconductor elements 40 a pair of first switching elements 40A and a pair of second switching elements 40B . It should be noted that the number of semiconductor elements 40 is not limited to that in the present embodiment and can be freely determined according to the required performance of the semiconductor device B1 . The pair of first switching elements 40A and the pair of second switching elements 40B are metal oxide semiconductor field effect transistors (MOSFETs) which are formed by a semiconductor material which contains silicon carbide (SiC) as the main component. It should be noted that the pair of first switching elements 40A and the pair of second switching elements 40B are not limited to MOSFETs and may be field effect transistors including metal insulator semiconductor field effect transistors (MISFETs) or bipolar transistors such as insulated gate transistors (IGBTs). Furthermore, the variety of semiconductor elements 40 not limited to switching elements and it can also be rectifying elements such as Schottky diodes. When writing to the semiconductor device B1 a case is described in which the plurality of semiconductor elements 40 a pair of first switching elements 40A and a pair of second switching elements 40B contains, which are n-channel MOSFETs.

Like it in the 14 and 15 each of the first switching elements 40A and the second switching elements 40B a front panel surface 401 , a back element surface 402 , a front surface electrode 41 , a rear surface electrode 42 , a gate electrode 43 and an insulating film 44 on. The front panel surface 401 and the back surface of the element 402 point to opposite sides or directions in the z-direction. The front element surface points from these surfaces 401 towards the side to which the first front surface is facing 11A of the substrate 10th points.

Like it in the 14 and 15 is shown is the front surface electrode 41 on the front element surface 401 intended. Through the front surface electrode 41 a source current flows. In the semiconductor device B1 , which is an example, is the front surface electrode 41 divided into four regions.

Like it in 14 is shown are on the front surface electrode 41 from each of the first switching elements 40A first wires 501 each connected to the four regions. The first wires 501 forming material is aluminum, to give an example. A variety of first wires 501 with the front surface electrodes 41 of the pair of first switching elements 40A are connected to the surfaces of the pair of second conductive portions 20B connected. As a result, the front surface electrodes are 41 of the pair of first switching elements 40A each electrically connected to the pair of second conductive sections 20B .

Like it in 14 is shown are on the front surface electrode 41 of each of the second switching elements 40B second wires 502 each connected to the four regions. The second wires 502 forming material is, for example, aluminum. The variety of second wires 502 with the front surface electrodes 41 of the pair of second switching elements 40B are connected to the surfaces of the pair of complementary conductive elements 21 connected. As a result, the front surface electrodes are 41 of the pair of second switching elements 40B each electrically connected to a respective one of the pair of complementary conductive elements 21 . As a result, the entrance terminal 31B electrically with the pair of second switching elements 40B connected, via the additional conductive elements 21 .

Like it in 15 is shown is the back surface electrode 42 over the entire back surface of the element 402 intended. Through the back surface electrode 42 a drain current flows. Like it in 15 is shown is the back surface electrode 42 from each of the first switching elements 40A electrically connected to or joined to the surface of the first conductive section 20A , namely by a conductive connection or joining layer 49 that is electrically conductive. That is the conductive connection layer 49 Formative material is lead-free solder, which contains tin (Sn) as the main component or the main component, to give an example. As a result, the back surface electrodes are 42 of the pair of first switching elements 40A electrically connected to the first conductive section 20A . Similar to the back surface electrodes 42 of the first switching elements 40A , are the back surface electrodes 42 of the second switching elements 40B electrically connected to the surfaces of the second conductive sections 20B , namely by means of the conductive connection layers 49 . As a result, the back surface electrodes are 42 of the pair of second switching elements 40B electrically with the pair of second conductive sections 20B connected.

Like it in 14 is shown is on the front panel surface 401 the gate electrode 43 intended. To the gate electrode 43 becomes a gate voltage for driving a corresponding one of the first switching elements 40A or the second switching elements 40B created. The gate electrode 43 is smaller than the front surface electrode 41 .

Like it in the 14 and 15 is shown is the insulating film 44 on the front element surface 401 intended. The insulating film 44 has electrically insulating properties. The insulating film 44 surrounds the front surface electrode 41 when viewed in the z direction. The insulating film 44 is formed, for example, by stacking a silicon dioxide (SiO ₂ ) layer, a silicon nitride (Si ₃ N ₄ ) layer and a polybenzoxazole (PBO) layer in this order on the front element surface 401 . It should be noted that the polybenzoxazole layer in the insulating film 44 can be replaced by a polyimide layer.

Like it in 11 is shown includes the variety of control terminals 3B a variety of gate terminals 33 and a variety of capture terminals 34 . In the present embodiment, the plurality of control terminals 3B in the y-direction on both sides of the semiconductor device B1 arranged. Like it in 11 is shown is the plurality of gate terminals 33 in the y-direction on both sides of the semiconductor device B1 arranged. The variety of gate terminals 33 are in correspondence to the number of first switching elements 40A and second switching elements 40B arranged. A gate voltage for driving a corresponding one of the first switching elements 40A and the second switching elements 40B is going to each of the multitude of gate terminals 33 created. Any of a variety of gate terminals 33 includes a pad section 331 and a terminal section 332 .

Like it in 11 is shown is the pad section 331 when viewed in the z direction from the substrate 10th spaced and is from the sealing resin portion 60 covered. As a result, the variety of gate terminals 33 from the sealing resin section 60 stored. A gate wire 503 is with a surface of the pad section 331 connected. That the gate wire 503 forming material is, for example, aluminum. It should be noted that the area of the pad section 331 e.g. with silver can be plated. Like it in the 11 and 14 is a variety of gate wires 503 , each with areas of a variety of pad sections 331 are each connected to the gate electrode 43 a corresponding element of the first switching element 40A and the second switching element 40B connected. As a result, the variety of gate terminals 33 each electrically connected to respective gate electrodes 43 of the pair of first switching elements 40A and gate electrodes 43 of the pair of second switching elements 40B .

Like it in 11 is shown is the terminal section 332 with the pad section 331 connected and facing the sealing resin portion 60 free. The terminal section 332 is used to the semiconductor device B1 to be mounted on a wiring substrate. The terminal section 332 includes a base section 332A and an upright section 332B . The base section 332A is with the pad section 331 connected and extending in the y-direction from one of the surfaces of the pair of first resin side surfaces 631 (described in detail below) of the sealing resin portion 60 . The size of the base section 332A in the x direction is smaller than that of the base section 312A from any entrance terminal 31 and as that of the base section 322A from any exit terminal 32 in the x direction. Like it in 12th the upright portion extends 332B starting from a front end of the base section in the y direction 332A towards the same side in the z-direction, in which the first front surface 11A of the substrate 10th points. Accordingly, the terminal section 332 when viewed in the x direction, an L shape, as in 12th is shown.

Like it in 11 is shown is in the semiconductor device B1 a pair of gate terminals 33 that the pair of second switching elements 40B correspond, arranged on the other side in the y-direction. The pair of gate terminals 33 is in the x-direction between the pair of output terminals 32 arranged. Furthermore, is in the semiconductor device B1 a pair of gate terminals 33 that the pair of first switching elements 40A correspond, arranged on one side in the y-direction. This pair of gate terminals 33 is in the x direction between the pair of input terminals 31 arranged.

Like it in 11 is shown is the variety of acquisition terminals 34 in the y-direction on both sides of the semiconductor device B1 arranged. The multitude of acquisition terminals 34 are in correspondence to the number of first switching elements 40A and second switching elements 40B arranged. Any of a variety of capture terminals 34 is adjacent to a gate terminal 33 that with the gate electrode 43 a corresponding element of the first switching elements 40A and the second switching elements 40B is electrically connected. A voltage that corresponds to a source current that flows through the front surface electrode 41 from a corresponding element of the first switching elements 40A and the second switching elements 40B flows to each of the plurality of detection terminals 34 created. Based on tensions, each connected to the multitude of detection terminals 34 are applied by the front surface electrodes 41 flowing source currents detected by means of a circuit that is outside the semiconductor device B1 located. Any of a variety of capture terminals 34 includes a pad section 341 and a terminal section 342 .

Like it in 11 is shown is the pad section 341 from the substrate 10th when viewed in the z-direction and spaced from the sealing resin portion 60 covered. As a result, the multitude of acquisition terminals 34 from the sealing resin section 60 stored. A detection wire 504 is with a surface of the pad section 341 connected. That the detection wire 504 forming material is, for example, aluminum. It should be noted that the area of the pad section 341 can be plated with silver, for example. Like it in the 11 and 14 are a variety of sense wires 504 , each with areas of a variety of pad sections 341 are connected, each with the front surface electrode 41 from a corresponding element of the first switching elements 40A and the second switching elements 40B connected. As a result, the multitude of acquisition terminals 34 each electrically connected to the respective front surface electrodes 41 of the pair of first switching elements 40A and the respective front surface electrodes 41 of the pair of second switching elements 40B .

Like it in 11 is shown is the terminal section 342 with the pad section 341 connected and facing the sealing resin portion 60 free. The terminal section 342 is used to the semiconductor device B1 to be mounted on a wiring substrate. The terminal section 342 includes a base section 342A and an upright section 342B . The base section 342A is with the pad section 341 connected and extending in the y-direction from a respective one of the pair of first resin side surfaces 631 (described in detail below) of the sealing resin portion 60 . The size of the base section 342A in the x direction is smaller than that of the base section 312A from any entrance terminal 31 and the base section 322A from any exit terminal 32 in the x direction. Like it in 12th the upright portion extends 342B starting from a front end of the base section in the y direction 342A towards the same side in the z-direction to which the first front surface 11A of the substrate 10th points. As a result, the terminal section has 342 when viewed in the x direction, an L shape, as in 12th is shown. It should be noted that the terminal section 342 has the same shape as the terminal sections 332 the large number of gate terminals 33 .

Like it in 11 is shown, positions of the upright section are correct in the example shown 312B of the entrance terminal 31A , the upright section 312B of the entrance terminal 31B , the upright sections 332B the gate terminals 33 that are arranged on one side in the y direction and the upright portions 342B the acquisition terminals 34 which are arranged on one side in the y direction essentially coincide in the y direction. In other words, the upright section overlaps 312B of the entrance terminal 31A , the upright section 312B of the entrance terminal 31B who have favourited Upright Sections 332B the gate terminals 33 that are arranged on one side in the y direction and the upright portions 342B the acquisition terminals 34 arranged on the one side in the y direction, each other when viewed in the x direction.

Like it in 11 shown, positions of the upright sections are correct in the example shown 322B of the pair of exit terminals 32 , the upright sections 332B the gate terminals 33 which are arranged on the other side in the y direction and the upright portions 342B the acquisition terminals 34 arranged on the other side in the y direction is substantially the same in the y direction. In other words, the upright sections overlap 322B of the pair of exit terminals 32 who have favourited Upright Sections 332B the gate terminals 33 that are arranged on the other side in the y direction and the upright portions 342B the acquisition terminals 34 which are arranged on the other side in the y-direction when viewed in the x-direction.

16 shows an electrical circuit of the semiconductor device B1 by the variety of semiconductor elements 40 , the conductive element 20 , the complementary conductive elements 21 , the conductive coupling element 29 , the variety of input / output terminals 3A and the multitude of tax terminals 3B is formed as described above. The semiconductor device B1 having such a configuration is used, for example, as an AC / DC converter.

Like it in the 1 to 3rd and 5 to 13 is shown, the sealing resin portion covers 60 the substrate 10th (excluding the first back surface 12A) , the conductive element 20 , the complementary conductive elements 21 , the conductive coupling element 29 and the variety of semiconductor elements 40 (the pair of first switching elements 40A and the pair of second switching elements 40B ). The sealing resin section 60 also covers the plurality of first wires 501 , the variety of second wires 502 , the variety of gate wires 503 , the variety of detection wires 504 , the variety of first connecting wires 51 and the plurality of second connection wires 52 . That the sealing resin section 60 The forming material is, for example, an epoxy resin. The sealing resin section 60 includes a front resin surface 61 , a back resin surface 62 , the pair of first resin side faces 631 , a pair of second resin side surfaces 632 and a pair of through holes 64 .

Like it in 12th and 13 is shown has the front resin surface 61 towards the side in the z direction, in which the first front surface 11A of the substrate 10th points. The back resin surface 62 points in the z-direction to the side to which the first rear surface 12A of the substrate 10th points. Like it in 5 is shown, the first rear surface is 12A opposite the rear resin surface 62 free. The back resin surface 62 has the shape of a frame that the first back surface 12A surrounds.

Like it in the 5 and 6 is the pair of first resin side surfaces 631 both with the front resin surface 61 as well as the back resin surface 62 connected and points in each case in the y direction. The terminal sections 312 of the pair of entrance terminals 31 who have favourited Terminal Sections 332 of the pair of gate terminals 33 and the terminal sections 342 of the pair of acquisition terminals 34 that correspond to the pair of first switching elements 40A are arranged, are opposite to the first resin side surface 631 free, which is arranged on one side in the y direction. The terminal sections 322 of the pair of exit terminals 32 who have favourited Terminal Sections 332 of the pair of gate terminals 33 and the terminal sections 342 of the pair of acquisition terminals 34 that correspond to the pair of second switching elements 40B are arranged, are opposite a first resin side surface 631 free, which is arranged on the other side in the y direction.

Like it in the 5 and 7 is the pair of second resin side surfaces 632 both with the front resin surface 61 as well as with the back resin surface 62 connected and points in each case in the x direction.

Like it in the 5 , 9 and 13 is shown, the pair of through holes extends 64 in the z direction through the sealing resin portion 60 through, starting from the front resin surface 61 towards the back resin surface 62 . Perforated edges of the pair of through holes 64 have a circular shape when viewed in the z direction. The pair of through holes 64 is in the x-direction on both sides of the substrate 10th arranged.

Like it in the 5 and 9 is shown is a pair of recessed sections 65 opposite the rear resin surface 62 excepted or set back. The pair of gutted sections 65 serves to position the semiconductor device B1 relative to a heat sink XI, which is described below.

<First substrate 7 >

In the present embodiment, the first substrate 7 with the semiconductor module A1 connected and a variety of electronic components 700 is on the first substrate 7 assembled. Like it in the 1 to 11 shown includes the first substrate 7 according to the present embodiment, a first front substrate surface or substrate front surface 71 , a first rear substrate surface or substrate back surface 72 , a variety of input / output passage sections 73 , a variety of control passage sections 74 and a pair of recessed sections 75 . The shape of the first substrate 7 is not particularly limited, and in the example shown, the first substrate 7 a rectangular shape when viewed in the z direction. The first substrate 7 includes a base material made of an epoxy resin and has insulating properties and a wiring pattern (not shown) formed on the base material.

The first front substrate surface 71 points to one side in the z direction. The first back surface of the substrate 72 points in the z direction toward the side opposite to that of the first front substrate surface 71 . In the present embodiment, the first rear substrate surface has 72 towards the front resin surface 61 of the sealing resin portion 60 of the semiconductor module A1 .

Each of the plurality of input / output passages 73 extends through the first substrate in the z-direction 7 through it, and the entrance terminal 31A , the entrance terminal 31B , and the pair of exit terminals 32 , which are the multitude of input / output terminals 3A of the semiconductor module A1 are due to the plurality of input / output passage sections 73 passed through. In the present embodiment, there are four input / output passage sections 73 intended. The upright section 312B of the entrance terminal 31A , the upright section 312B of the entrance terminal 31B and the upright sections 322B of the pair of exit terminals 32 are each through the four input / output passage sections 73 passed through. In the example shown, there is the upright section 312B of the entrance terminal 31A , the upright section 312B of the entrance terminal 31B , and the upright sections 322B of the pair of exit terminals 32 opposite the first front substrate surface 71 in the z direction.

Each of the plurality of control passages 74 extends through the first substrate in the z-direction 7 therethrough, and portions of the plurality of first connectors 8th with which the variety of gate terminals 33 and the multitude of acquisition terminals 34 which are the multitude of tax terminals 3B of the semiconductor module A1 acts, are connected by the plurality of control passage sections 74 passed through. In the example shown there are four control passages 74 intended. Between two input / output passages 73 are two control passage sections in the x direction 74 arranged and overlap with these input / output passage sections 73 when viewed in the x direction. The other two control passages 74 are in the x-direction between the other two input / output passage sections 73 arranged and overlap with these control passage sections 74 or with these input / output passage sections 73 when viewed in the x direction. Sections of the first connector 8th are each through the control passage sections 74 passed through, and a gate terminal 33 and an acquisition terminal 34 are about a first connector 8th through each control passage section 74 passed through.

The pair of gutted sections 75 is at opposite ends of the first substrate 7 provided in the x-direction and is recessed or set back in the x-direction. Like it in 4th the through holes are shown 64 of the sealing resin portion 60 of the semiconductor module A1 when viewed in the z direction in the excluded sections 75 arranged.

The connection terminals 76 are used to control signals in the semiconductor module A1 enter or control signals from the semiconductor module A1 to spend. In the present embodiment, the plurality of connection terminals 76 close to the center of the first substrate 7 arranged in the x direction and in the y direction. The variety of connection terminals 76 are between the pair of recessed sections 75 arranged.

Each of the connection terminals 76 includes a support section 761 and a variety of connector pins 762 . The storage section 761 is on the first substrate 7 fixes and stores or carries the large number of connecting pins 762 . In the example shown is the storage section 761 on the first front substrate surface 71 of the first substrate 7 appropriate. The variety of connecting pins 762 stand opposite the storage section 761 in the z direction. The connecting pins 762 are electrical with a wiring pattern (not shown) on the first substrate 7 connected.

The variety of electronic components 700 are on the first substrate 7 assembled. In the present embodiment, uses and functions of the large number of electronic components 700 not particularly restricted, and the electronic components 700 include a circuit that has a function for generating control signals, that of the plurality of control terminals 3B (Variety of gate terminals 33 ) of the semiconductor module A1 are to be entered, namely from control signals from the large number of connection terminals 76 are entered, and has a function of converting detection signals from the plurality of control terminals 3B (Acquisition terminals 34 ) are output, in output signals to be output to the outside, to give an example.

Like it in the 1 , 3rd and 4th shown includes the plurality of electronic components in the present embodiment 700 a variety of electronic components 701 , a variety of electronic components 702 , a variety of electronic components 703 , a variety of electronic components 704 , a variety of electronic components 705 , a variety of electronic components 706 , a variety of electronic components 707 , a variety of electronic components 708 and a variety of electronic components 709 .

Like it in the 3rd and 4th is shown, are the electronic components in the example shown 701 , the electronic components 702 , the electronic components 703 , the electronic components 704 and the electronic components 705 on the first front substrate surface 71 of the first substrate 7 assembled. Like it in 1 is shown are the electronic components 706 , the electronic components 707 , the electronic components 708 and the electronic components 709 on the first back substrate surface 72 of the first substrate 7 assembled.

Like it in 4th is shown is the variety of electronic components 701 on both sides in the y direction with respect to the plurality of connection terminals 76 arranged. The electronic components 701 are, for example, Schottky diodes.

The variety of electronic components 702 are adjacent to the plurality of electronic components in the x direction 701 arranged. The electronic components 702 are, for example, chip resistors.

The variety of electronic components 703 are in the y-direction on the outer side with respect to the plurality of connection terminals 76 arranged and surround the variety of electronic components 701 sandwich-like. The variety of electronic components 703 are arranged side by side in the x direction. The electronic components 703 are, for example, chip resistors.

The variety of electronic components 704 are related to the variety of electronic components 703 arranged on the outer side in the y direction. The electronic components 704 are, for example, Schottky diodes.

The variety of electronic components 705 are related to the variety of electronic components 704 arranged on the outer side in the y direction. The variety of electronic components 705 are closest to the control passage sections 74 on the first front substrate surface 71 arranged. The electronic components 705 are, for example, ceramic capacitors.

Like it in 1 is shown is the variety of electronic components 706 in the y direction with respect to the plurality of connection terminals 76 arranged on both sides. The electronic components 706 are, for example, bipolar transistors.

The variety of electronic components 707 are in the y direction with respect to the variety of electronic components 706 arranged on the outer side. The electronic components 707 are, for example, ceramic capacitors.

The variety of electronic components 708 are adjacent to or next to the large number of electronic components in the x direction 707 arranged. The electronic components 708 are, for example, MOS-FETs.

The variety of electronic components 709 are each between one of the multitude of electronic components 707 and one of the variety of electronic components 708 arranged. The electronic components 709 are, for example, chip resistors.

<First connector 8th >

The multitude of first connectors 8th is on the first substrate 7 fixed and is with the multitude of tax terminals 3B (the variety of gate terminals 33 and the multitude of acquisition terminals 34 ) connected. Positions of the first substrate 7 where the first connector 8th and the procedure for setting the first connector 8th on the first substrate 7 are not particularly restricted. In the present embodiment, the plurality of first connectors are 8th on the side of the first back substrate surface 72 of the first substrate 7 appropriate. In the example shown, sections are the first connector 8th through the control passage sections 74 of the first substrate 7 passed through.

Like it in the 1 , 8th and 9 shown include the first connectors 8th according to the present embodiment, one housing each 81 and a variety of insertion holes 82 . The housing 81 is made of resin, etc., for example, and forms a main body portion of the first connector 8th . Each of the insertion holes 82 extends in the z direction through the first connector and the upright portion 332B of a gate terminal 33 or the upright section 342B of an acquisition terminal 34 is through the insertion hole 82 passed through.

The first connectors 8th connect the gate terminals 33 and the acquisition terminals 34 electrically with suitable positions of a wiring pattern (not shown) on the first substrate 7 . The first connectors 8th allow the gate terminals 33 and the acquisition terminals 34 in the x direction and / or in the y direction relative to the first substrate 7 let move. In the example shown, the first connectors allow 8th that the gate terminals 33 and the acquisition terminals 34 relative to the first substrate 7 move in the y direction as it is in 8th is shown and allow the gate terminals 33 and the acquisition terminals 34 relative to the first substrate 7 move in the x direction as it is in 10th is shown. Furthermore, the first connector 8th also be configured to be the gate terminals 33 and the acquisition terminals 34 relative to the first substrate 7 let it move in the z direction. As such first connector 8th For example, conventionally known connectors as disclosed in US Pat JP 2018-113163A , JP 2018-63886A , JP 2017-139101A , Etc..

In the example shown are a gate terminal 33 and an acquisition terminal 34 each in two insertion holes 82 of a first connector 8th introduced. Four first connectors 8th are arranged adjacent to one another or next to one another in the x direction and the y direction.

Like it in the 6 and 7 is shown, in the present embodiment, the plurality of first connectors 8th on the outer side in the y direction with respect to the sealing resin portion 60 arranged. The first connectors 8th overlap with the sealing resin portion 60 of the semiconductor module A1 when viewed in the y direction.

According to the present embodiment, as shown in 1 is shown the variety of tax terminals 3B (the multitude of gate terminals 33 and the multitude of acquisition terminals 34 ) of the semiconductor device B1 with the first substrate 7 about the first connector 8th connected, namely on or when attaching the semiconductor module A1 . The first connectors 8th enable the variety of gate terminals 33 relative to the first substrate 7 Let it move in the x direction and / or in the y direction. Therefore, if there is a variation in the angles at which the upright sections 332B the large number of gate terminals 33 and the upright sections 342B the large number of acquisition terminals 34 protrude, misalignment in the x direction and the y direction by the first connectors 8th are absorbed or balanced. The occurrence of a situation where the angles or positions of the gate terminals 33 and the acquisition terminals 34 with respect to the first substrate 7 corrected can therefore be suppressed. Accordingly, in the semiconductor module A1 the connection of terminals can be facilitated and a more reliable electrical connection can be realized.

The first connectors 8th overlap with the sealing resin portion 60 when viewed in the y direction and therefore the length of the semiconductor module can be avoided A1 rises in the z direction as a result of that the first connector 8th be provided.

The multitude of input / output terminals 3A (the entrance terminal 31A , the entrance terminal 31B and the pair of exit terminals 32 ) of the semiconductor module A1 and the variety of connector pins 762 the large number of connection terminals 76 face the first substrate 7 in the z-direction to the same side (to the side to which the first front substrate surface is also 71 points). Therefore, substrates etc. with the variety of input / output terminals 3A and the multitude of connection Terminals 76 to be connected, are arranged collectively on the side to which the first front substrate surface 71 of the first substrate 7 points.

[Variation of the First Embodiment]

17th shows a variation of the semiconductor module A1 . It should be noted that in 17th Elements that are the same or similar to those in the above-described embodiment are given the same reference numerals as those used in the above-described example.

A semiconductor module A11 according to this variation further includes a second substrate 91 , a third substrate 92 and a heat sink XI, in addition to the components of the semiconductor module A1 .

Regarding the first substrate 7 is the second substrate 91 arranged in the z-direction on the side to which the first front substrate surface 71 points. A variety of second connectors 911 is, for example, on the second substrate 91 appropriate. Similar to the first connectors 8th enable the second connector 911 that the upright sections 312B and 322B the input / output terminals 3A relative to the second substrate 91 can move in the x-direction and the y-direction, and enable the variety of input / output terminals 3A electrically with suitable positions of the second substrate 91 connect to. In the example shown, the second connector is 911 on a surface of the second substrate 91 provided that to the the first substrate 7 opposite side. A current that is the target of switching that is from the semiconductor module A1 is carried out, for example, through the second substrate 91 guided.

Regarding the second substrate 91 is the third substrate 92 arranged in the z-direction on the side facing the first substrate 7 opposite. A variety of third party connectors 921 are on the third substrate, for example 92 appropriate. Similar to the first connectors 8th and the second connectors 911 enable the third connector 921 that the connecting pins 762 the connection terminals 76 relative to the third substrate 92 can move in the x-direction and the y-direction, and enable the plurality of connecting pins 762 electrically with suitable positions of the third substrate 92 connect to. It should be noted that the second substrate 91 in this example has through holes (not shown) through which the plurality of connecting pins pass 762 are led. Control signals used in the variety of connection terminals 76 are to be entered or from the large number of connection terminals 76 are to be output, for example, through the third substrate 92 passed through.

The heat sink X1 is used to emit heat from the variety of semiconductor elements 40 is generated to the outside. The heat sink X1 is made of a metal such as aluminum, for example. Furthermore, inside the heat sink X1 a water channel for water cooling may also be provided. The semiconductor device B1 is at the heat sink X1 using screws X2 appropriate. The screws X2 are through the through holes 64 of the sealing resin portion 60 passed through and screwed into internal threads that are in the heat sink X1 are provided. In the example shown is the heat sink X1 with a variety of tabs X11 fitted. As a result of that the variety of protrusions X11 in the multitude of exempted sections 65 of the sealing resin portion 60 are fitted is the semiconductor device B1 relative to the heat sink X1 positioned more precisely.

With this variation, too, a connection of terminals can be facilitated and a more reliable electrical connection can be realized. Furthermore, as a result of that the second connector 911 on the second substrate 91 are provided and the third connector 921 on the third substrate 92 are provided, the second substrate 91 and the third substrate 92 in addition to the semiconductor module A1 and the first substrate 7 be provided or provided more easily or more cheaply.

[Variation of the semiconductor device B1 ]

18th shows a variation of the semiconductor device B1 . In a semiconductor device B11 according to this variation, positions of the upright sections differ 312B and 322B the variety of input / output terminals 3A of positions of the upright sections 332B and 342B the variety of tax terminals 3B , in the y direction. More specifically, the upright sections are 332B and 342B the variety of tax terminals 3B inward opposite the (closer to the sealing resin portion 60 than the) upright sections 312B and 322B the variety of input / output terminals 3A arranged, in the y direction.

With this variation, the input / output passage sections 73 from the first substrate 7 can be omitted by, for example, the upright sections 312B and 322B in the y direction in the in 17th shown example on the outer side of the first substrate 7 to be ordered.

[First embodiment: AC / DC converter unit C1 ]

The 19th to 28 12 show an AC / DC converter unit according to the first embodiment of the present disclosure. An AC / DC converter unit C1 according to the present embodiment includes a first semiconductor module A21 , a second semiconductor module A22 , an input module D , an output module E , a capacitor module F , an isolated power supply module G and a transformer module H . The use of the AC / DC converter unit C1 is not particularly limited, and an example of use is AC / DC conversion for converting AC power (eg 200 V - 36 A) into the input module D is entered, and for outputting DC power (e.g. 800 V - 9 A, 7.2 kW) from the output module E .

19th Fig. 3 is a block diagram showing the AC / DC converter unit C1 shows. 20 is a plan view showing the AC / DC converter unit C1 shows. 21 Fig. 4 is a plan view showing a main portion of the AC / DC converter unit C1 shows. 22 12 is a front view showing a semiconductor module of the AC / DC converter unit C1 shows. 23 FIG. 12 is a cross sectional view of the main portion taken along the line XXIII-XXIII in FIG 21 . 24th FIG. 12 is a cross sectional view of the main portion taken along the line XXIV-XXIV in FIG 21 . 25th FIG. 12 is a cross sectional view of the main portion taken along the XXV-XXV line in FIG 21 . 26 FIG. 12 is a cross sectional view of the main portion taken along the XXVI-XXVI line in FIG 21 . 27 FIG. 12 is a cross-sectional view taken along the line XXVII-XXVII in FIG 20 . 28 Fig. 10 is a cross sectional view taken along the line XXVIII-XXVIII in Fig. 1 20 .

[First semiconductor module A21 ]

A section of the configuration of the first semiconductor module A21 matches or is common to the semiconductor module described above A1 . Like it in 22 is shown includes the first semiconductor module A21 a semiconductor device B21 , the first substrate 7 , the variety of electronic components 700 , the variety of connection terminals 76 , and the multitude of first connectors 8th . The first substrate 7 , the variety of electronic components 700 , the variety of connection terminals 76 and the variety of first connectors 8th have, for example, the same configuration as that in the semiconductor module A1 . It should be noted that due to the large number of electronic components 700 that on the first substrate 7 are mounted, for example a gate driver, a control board ("control board"), etc., which can be formed in 19th are shown.

Like it in 19th shown includes the semiconductor device B21 a first switching element 40A and a second switching element 40B . In the present embodiment, the semiconductor device forms B21 a power factor correction circuit (PFC) and has an AC / DC conversion function, to name one example.

Like it in the 19th to 22 shown includes the semiconductor device B21 an entrance terminal 31A , an entrance terminal 31B , an exit terminal 32A and an exit terminal 32B . Not the configuration in the semiconductor device B1 have terminal sections 312 of the entrance terminals 31A , 31B a straight shape and terminal sections 322 the exit terminals 32A , 32B also have a straight shape and therefore do not include the upright sections 312B , 322B .

Like it in 20 and 21 shown is the terminal section 312 of the entrance terminal 31A and the terminal section 312 of the entrance terminal 31B toward one side in the y direction and are spaced from each other in the x direction. The terminal section 322 of the exit terminal 32A and the terminal section 322 of the exit terminal 32B project to the other side in the y-direction and are spaced from each other in the x-direction.

Like it in 19th is shown is the entrance terminal 31A with the source electrode (front surface electrode 41 ) of the first switching element 40A and the drain electrode (rear surface electrode 42 ) of the second switching element 40B connected. The entrance terminal 31B is connected via a coil to a connection point between two diodes which are connected in series. The exit terminal 32A is connected to the cathode of one of the diodes. The exit terminal 32B is connected to the anode of the other diode.

The terminal sections 312 of the entrance terminal 31A and the entrance terminal 31B each contain a mounting hole 313 . The mounting hole 313 is near the front or leading end of the terminal section 312 provided and extends in the z-direction through the terminal section 312 through it.

[Second semiconductor module A22 ]

A section of the configuration of the second semiconductor module A22 is the same as the semiconductor module described above A1 . Like it in 22 is shown includes the second semiconductor module A22 a semiconductor device B22 , the first substrate 7 , the variety of electronic components 700 , the variety of connection terminals 76 and the Variety of first connectors 8th . The first substrate 7 , the variety of electronic components 700 , the variety of connection terminals 76 and the variety of first connectors 8th have, for example, the same configuration as that in the semiconductor module A1 . It should be noted that due to the large number of electronic components 700 that on the first substrate 7 are mounted, for example the gate driver, the control plate, etc., which can be formed in 19th are shown.

Like it in 19th shown includes the semiconductor device B22 two first switching elements 40A and two second switching elements 40B . In the present embodiment, the semiconductor device B22 an H-bridge circuit (full bridge circuit) for forming an LLC resonance DC / DC converter (DC / DC converter with LLC resonance), together with the transformer module H and a semiconductor device B23 of the output module E to give an example.

Like it in the 19th to 22 shown includes the semiconductor device B22 an entrance terminal 31A , an entrance terminal 31B , an exit terminal 32A and an exit terminal 32B . Unlike the configuration of the semiconductor device B1 have in the semiconductor device B22 the terminal sections 312 of the entrance terminals 31A , 31B straight shape and have terminal sections 322 the exit terminals 32A , 32B a straight shape, creating the upright sections 312B , 322B not included.

Like it in the 20 and 21 shown is the terminal section 312 of the entrance terminal 31A and the terminal section 312 of the entrance terminal 31B to one side in the y direction and are spaced from each other in the x direction. The terminal section 322 of the exit terminal 32A and the terminal section 322 of the exit terminal 32B project in the y direction to the other side and are spaced from each other in the x direction.

Like it in 19th is shown is the entrance terminal 31A with the drain electrodes (rear surface electrodes 42 ) of the first two switching elements 40A connected. The entrance terminal 31B is with the source electrodes (front surface electrodes 41 ) of the two second switching elements 40B connected. The exit terminal 32A is with the source electrode (front surface electrode 41 ) from one of the first switching elements 40A and the drain electrode (rear surface electrode 42 ) from one of the second switching elements 40B connected. The exit terminal 32B is with the source electrode (front surface electrode 41 ) of the other first switching element 40A and the drain electrode (rear surface electrode 42 ) of the other second switching element 40B connected.

The terminal sections 312 of the entrance terminal 31A and the entrance terminal 31B of the semiconductor device B22 each contain a mounting hole 313 . The mounting hole 313 is near the front end of the terminal section 312 provided and extends in the z-direction through the terminal section 312 through it.

[Input module D ]

The input module D is a module to which power is input that the AC / DC converter unit C1 is to be fed. The exact configuration of the input module D is not restricted, and the input module D in the present embodiment includes input connectors D1 , an input filter D2 , a reactor or a coil (“reactor”) D3, an output terminal D41 and an exit terminal D42 how it in the 19th and 20 is shown.

The input connector D1 are sections to which AC power (e.g. 200 V - 36 A) is entered when connected to external connectors etc. The input filter D2 is a section that performs predetermined filter processing on the AC power input to the input connector D1 is entered. The reactor D3 is between the input filter D2 and the exit terminal D41 arranged.

The exit terminal D41 and the exit terminal D42 are used to output power to the input connectors D1 is supplied to the first semiconductor module A21 (Semiconductor device B21 ). Like it in the 20 , 21 , 23 and 24th the exit terminals are shown D41 and D42 towards the other side in the y-direction and are spaced from each other in the x-direction. The exit terminals D41 and D42 are formed, for example, by metal plates. The material forming the metal plates is copper (Cu) or a copper alloy. The exit terminals D41 and D42 have shapes that include leading ends that extend straight in the y direction. The exit terminals D41 and D42 each have a mounting hole D43 . The mounting holes D43 are near the leading or leading ends of the exit terminals D41 and D42 provided and extend in the z direction through the exit terminals D41 and D42 through it.

[Output module E ]

The output module E is a module that outputs power from the AC / DC Converter unit C1 is to be spent. The exact configuration of the output module E is not limited, and in the present embodiment, the output module includes E Output connector E1 , an output filter E2 , a starting substrate E3 and the semiconductor device B23 how it in the 19th , 20 and 28 is shown.

The output connector E1 are used to output DC power (e.g. 800 V - 9 A, 7.2 kW) when connected to external connectors etc. The output filter E2 is a section that performs predetermined filter processing on the DC power from the output connectors E1 is to be spent. The starting substrate E3 FIG. 10 is a wiring substrate that includes a base material made of a glass epoxy resin and a wiring pattern formed on the base material, for example, and the output filter E2 and the semiconductor device B23 are, for example, on the starting substrate E3 assembled.

Like it in 19th shown includes the semiconductor device B23 four diode elements 40C , an entrance terminal 31A , an entrance terminal 31B , an exit terminal 32A and an exit terminal 32B and forms a bridge type rectification circuit. Like it in 20 is shown, the input terminals are 31A and 31B in the y-direction toward one side and are spaced from each other in the x-direction. The exit terminals 32A and 32B project in the y-direction towards the other side and are spaced apart in the x-direction.

[Capacitor module F ]

Like it in the 19th to 21 , 24th and 25th is shown is the capacitor module F with the terminal section 322 (Exit terminal 32A ) of the semiconductor device B21 of the first semiconductor module A21 , the terminal section 312 (Entrance terminal 31A ) of the semiconductor device B22 of the second semiconductor module A22 , the terminal section 322 (Exit terminal 32B ) of the semiconductor device B21 and the terminal section 312 (Entrance terminal 31B ) of the semiconductor device B22 connected. The exact or specific configuration of the capacitor module F is not limited, and in the present embodiment, the capacitor module includes F a variety of snubber capacitors F1 , a connection terminal F21 and a connection terminal F22 .

The variety of snubber capacitors F1 has the function of absorbing a surge voltage caused by a parasitic inductance in a connection path between the first semiconductor module A21 (Semiconductor device B21 ) and the second semiconductor module A22 (Semiconductor device B22 ) is caused when a switch is turned off.

The connection terminals F21 and F22 are e.g. formed by metal plates. The material forming the metal plates is copper (Cu) or a copper alloy. The connection terminal F21 is with the terminal section 322 (Exit terminal 32A ) of the semiconductor device B21 and the terminal section 312 (Entrance terminal 31A ) of the semiconductor device B22 connected. The connection terminal F22 is with the terminal section 322 (Exit terminal 32B ) of the semiconductor device B21 and the terminal section 312 (Entrance terminal 31B ) of the semiconductor device B22 connected.

[Isolated power supply module G ]

The insulated power supply module G is a module that has power for driving the first semiconductor module A21 and the second semiconductor module A22 , etc. of the AC / DC converter unit C1 feeds. The isolated power supply module G is, for example, via cable (not shown) to the first semiconductor module A21 , the second semiconductor module A22 , etc. connected.

[Transformer module H ]

Like it in the 19th and 20 is shown is the transformer module H between the second semiconductor module A22 and the output module E arranged. The transformer module H works together with the second semiconductor module A22 and the output module E as a direct current / direct current converter (DC / DC converter). The exact configuration of the transformer module H is not limited, and in the present embodiment, the transformer module includes H a transformer H3 , an entrance terminal H11 , an entrance terminal H12 , an exit terminal H21 and an exit terminal H22 .

The transformer H3 isolates the side of the second semiconductor module A22 (Primary side) and the side of the output module E (Secondary side) from each other and has a predetermined voltage change function. The entrance terminal H11 is with the exit terminal 32A of the second semiconductor module A22 (Semiconductor device B22 ) connected. The entrance terminal H12 is with the exit terminal 32B of the second semiconductor module A22 (Semiconductor device B22 ) connected. The exit terminal H21 is with the entrance terminal 31A of the semiconductor device B23 of the output module E connected. The exit terminal H22 is with the entrance terminal 31B of the semiconductor device B23 of the output module E connected.

Like it in the 20 and 21 in the present embodiment are the first semiconductor module A21 , the capacitor module F and the isolated power supply module G in the y-direction on the other side of the input module D arranged. The first semiconductor module A21 is sandwiched in the x-direction between the capacitor module F and the isolated power supply module G arranged. The second semiconductor module A22 is in the y-direction on the other side of the first semiconductor module A21 arranged. The second semiconductor module A22 is sandwiched in the x-direction between the capacitor module F and the isolated power supply module G arranged. The transformer module H is in the y-direction on the other side of the capacitor module F , of the second semiconductor module A22 and the isolated power supply module G arranged. The output module E is in the y-direction on the other side of the transformer module H arranged. The semiconductor device B23 is arranged in substantially the same position in the x-direction as the semiconductor component B21 and the semiconductor device B22 .

Like it in the 20 , 21 and 23 is shown are the exit terminal D41 of the input module D and the terminal section 312 of the entrance terminal 31A of the first semiconductor module A21 (Semiconductor device B21 ) directly connected to each other, using a screw 351 and a mother 361 . The screw 351 and the mother 361 14 are a specific example of a fastener of the present disclosure and an example of a fixing means of the present disclosure. The exit terminal D41 and the terminal section 312 lie one on top of the other such that the mounting hole D43 and the mounting hole 313 essentially coincide in the z direction. The screw 351 is through the mounting hole D43 and the mounting hole 313 passed through. The mother 361 is on the screw 351 screwed. The exit terminal D41 and the terminal section 312 (Entrance terminal 31A ) are by means of a fastening force of the screw 351 and the mother 361 attached (fixed) and directly connected to each other.

Furthermore, the exit terminal D42 of the input module D and the terminal section 312 of the entrance terminal 31B of the first semiconductor module A21 (Semiconductor device B21 ) directly with each other using a screw 352 and a mother 362 connected. The screw 352 and the mother 362 form a particular example of a fastener of the present disclosure and an example of a fastener of the present disclosure. The exit terminal D42 and the terminal section 312 lie one above the other in such a way that the mounting hole D43 and the mounting hole 313 when viewed in the z direction essentially agree or coincide. The screw 352 is through the mounting hole D43 and the mounting hole 313 passed through. The mother 362 is on the screw 352 screwed. The exit terminal D42 and the terminal section 312 (Entrance terminal 31B ) are by means of a fastening force of the screw 352 and the mother 362 attached (fixed) and directly connected to each other.

Like it in the 20 , 21 , 24th and 25th is shown are the terminal section 322 of the exit terminal 32A of the first semiconductor module A21 (Semiconductor device B21 ) and the terminal section 312 of the entrance terminal 31A of the second semiconductor module A22 (Semiconductor device B22 ) using a screw 353 and a mother 363 are directly connected. The screw 353 and the mother 363 form a particular example of a fastener of the present disclosure and an example of a fastener of the present disclosure. The terminal section 322 of the exit terminal 32A of the semiconductor device B21 and the terminal section 312 of the entrance terminal 31A of the semiconductor device B22 lie one on top of the other such that the mounting hole 323 and the mounting hole 313 when viewed in the z direction essentially coincide or match. The screw 353 is through the mounting hole 323 and the mounting hole 313 passed through. The mother 363 is on the screw 353 screwed. The terminal section 322 of the exit terminal 32A of the semiconductor device B21 and the terminal section 312 of the entrance terminal 31A of the semiconductor device B22 are using or a fastening force of the screw 353 and the mother 363 attached (fixed) and directly connected to each other.

Also is the connection terminal F21 in the present embodiment together with the terminal section 322 of the exit terminal 32A of the semiconductor device B21 and the terminal section 312 of the entrance terminal 31A of the semiconductor device B22 attached. The connection terminal F21 includes a first section in the present embodiment F211 , a second section F212 and a third section F213 . The first paragraph F211 is elongated along the x direction and extends away from the snubber capacitor F1 . The second section F212 is a front end portion of the connection terminal F21 in the y direction and is in the drawing in the z direction on the lower side with respect to the first section F211 arranged. The third section F213 is between the first section F211 and the second section F212 arranged and is inclined with respect to the x direction and the z direction. A mounting hole F214 is in that second section F212 educated. The second section F212 , the terminal section 322 and the terminal section 312 lie one on top of the other such that the mounting hole F214 , the mounting hole 323 and the mounting hole 313 essentially agree when viewed in the z direction. The screw 353 is through the mounting hole F214 , the mounting hole 323 and the mounting hole 313 passed through. The mother 363 is on the screw 353 screwed. The terminal section 322 of the exit terminal 32A of the semiconductor device B21 , the terminal section 312 of the entrance terminal 31A of the semiconductor device B22 and the second section F212 of the connection terminal F21 are by means of a fastening force of the screw 353 and the mother 363 attached (fixed) and directly connected to each other.

Like it in the 20 , 21 and 25th is shown are the terminal section 322 of the exit terminal 32B of the first semiconductor module A21 (Semiconductor device B21 ) and the terminal section 312 of the entrance terminal 31B of the second semiconductor module A22 (Semiconductor device B22 ) using a screw 354 and a mother 364 directly connected to each other. The screw 354 and the mother 364 14 are a specific example of a fastener of the present disclosure and an example of a fixing means of the present disclosure. The terminal section 322 of the exit terminal 32B of the semiconductor device B21 and the terminal section 312 of the entrance terminal 31B of the semiconductor device B22 lie one on top of the other such that the mounting hole 323 and the mounting hole 313 essentially agree when viewed in the z direction. The screw 354 is through the mounting hole 323 and the mounting hole 313 passed through. The mother 364 is on the screw 354 screwed. The terminal section 322 of the exit terminal 32B of the semiconductor device B21 and the terminal section 312 of the entrance terminal 31B of the semiconductor device B22 are by means of a fastening force of the screw 354 and the mother 364 attached (fixed) and directly connected to each other.

Likewise, the connection terminal F22 in the present embodiment together with the terminal section 322 of the exit terminal 32B of the semiconductor device B21 and the terminal section 312 of the entrance terminal 31B of the semiconductor device B22 attached. The connection terminal F22 includes a first section in the present embodiment F221 , a second section F222 and a third section F223 . The first paragraph F221 is elongated along the x direction and extends away from the snubber capacitor F1 . The first paragraph F221 overlaps the terminal section 312 , the terminal section 322 and the second section F212 made using the screw 353 and the mother 363 are fixed, namely when viewed in the z direction. The first paragraph F221 is in the z-direction in the drawing on the lower side of the terminal section 312 , the terminal section 322 and the second section F212 arranged using the screw 353 and the mother 363 are set. The second section F222 is a front end portion of the connection terminal F22 in the x direction and is in the z direction in the drawing with respect to the first section F221 arranged on the upper side. The third section F223 is between the first section F221 and the second section F222 arranged and is inclined with respect to the x direction and the z direction. A mounting hole F224 is in the second section F222 educated. The second section F222 , the terminal section 322 and the terminal section 312 lie one on top of the other such that the mounting hole F224 , the mounting hole 323 and the mounting hole 313 essentially agree when viewed in the z direction. The screw 354 is through the mounting hole F224 , the mounting hole 323 and the mounting hole 313 passed through. The mother 364 is on the screw 354 screwed. The terminal section 322 of the exit terminal 32B of the semiconductor device B21 , the terminal section 312 of the entrance terminal 31B of the semiconductor device B22 and the second section F222 of the connection terminal F22 are by means of a fastening force of the screw 354 and the mother 364 attached (fixed) and directly connected to each other.

Like it in the 20 , 21 and 26 is shown are the terminal section 322 of the exit terminal 32A of the second semiconductor module A22 (Semiconductor device B22 ) and the entrance terminal H11 of the transformer module H using a screw 355 and a mother 365 directly connected to each other. The screw 355 and the mother 365 form a particular example of a fastener of the present disclosure and an example of a fastener of the present disclosure. The terminal section 322 of the exit terminal 32A of the semiconductor device B22 and the entrance terminal H11 of the transformer module H lie one on top of the other such that the mounting hole 323 and the mounting hole H13 essentially agree when viewed in the z direction. The screw 355 is through the mounting hole 323 and the mounting hole H13 passed through. The mother 365 is on the screw 355 screwed. The terminal section 322 of the exit terminal 32A of the semiconductor device B22 and the mounting hole H13 or the entrance terminal H11 of the transformer module H are by means of a fastening force of the screw 355 and the mother 365 attached (fixed) and directly connected to each other.

Furthermore, the terminal section 322 of the exit terminal 32B of the second semiconductor module A22 (Semiconductor device B22 ) and the entrance terminal H12 of the transformer module H using a screw 356 and a mother 366 directly connected to each other. The screw 356 and the mother 366 form a particular example of a fastener of the present disclosure and an example of a fastener of the present disclosure. The terminal section 322 of the exit terminal 32B of the semiconductor device B22 and the entrance terminal H12 of the transformer module H lie one above the other in such a way that the mounting hole 323 and the mounting hole H13 essentially agree when viewed in the z direction. The screw 356 is through the mounting hole 323 and the mounting hole H13 passed through. The mother 366 is on the screw 356 screwed. The terminal section 322 of the exit terminal 32B of the semiconductor device B22 and the mounting hole H13 or the entrance terminal H12 of the transformer module H are by means of a fastening force of the screw 356 and the mother 366 attached (fixed) and directly connected to each other.

Like it in the 20 and 27 is shown are the exit terminal H21 of the transformer module H and the terminal section 312 of the entrance terminal 31A of the semiconductor device B23 using a screw 357 and a mother 367 directly connected to each other. The screw 357 and the mother 367 form a particular example of a fastener of the present disclosure and an example of a fastener of the present disclosure. The exit terminal H21 of the transformer module H and the terminal section 312 of the entrance terminal 31A of the semiconductor device B23 lie one on top of the other such that the mounting hole H23 and the mounting hole 313 essentially agree when viewed in the z direction. The screw 357 is through the mounting hole H23 and the mounting hole 313 passed through. The mother 367 is on the screw 357 screwed. The exit terminal H21 of the transformer module H and the terminal section 312 of the entrance terminal 31A of the semiconductor device B23 are by means of a fastening force of the screw 357 and the mother 367 attached (fixed) and directly connected to each other.

Furthermore, the exit terminal H22 of the transformer module H and the terminal section 312 of the entrance terminal 31B of the semiconductor device B23 using a screw 358 and a mother 368 directly connected to each other. The screw 358 and the mother 368 form a particular example of a fastener of the present disclosure and an example of a fastener of the present disclosure. The exit terminal H22 of the transformer module H and the terminal section 312 of the entrance terminal 31B of the semiconductor device B23 lie one on top of the other such that the mounting hole H23 and the mounting hole 313 essentially agree when viewed in the z direction. The screw 358 is through the mounting hole H23 and the mounting hole 313 passed through. The mother 368 is on the screw 358 screwed. The exit terminal H22 of the transformer module H and the terminal section 312 of the entrance terminal 31B of the semiconductor device B23 are by means of a fastening force of the screw 358 and the mother 368 attached (fixed) and directly connected to each other.

Like it in the 20 and 28 is shown are the exit terminal 32A of the semiconductor device B23 and the starting substrate E3 using a screw 359 and a mother 369 directly connected to each other. The screw 359 and the mother 369 form a particular example of a fastener of the present disclosure and an example of a fastener of the present disclosure. The terminal section 322 of the exit terminal 32A of the semiconductor device B23 and the starting substrate E3 lie one on top of the other such that the mounting hole 323 and the mounting hole E31 essentially agree when viewed in the z direction. The screw 359 is through the mounting hole 323 and the mounting hole H31 passed through. The mother 369 is on the screw 359 screwed. The terminal section 322 of the exit terminal 32A of the semiconductor device B23 and the starting substrate E3 are by means of a fastening force of the screw 359 and the mother 369 attached (fixed) and directly connected to each other.

Furthermore, the exit terminal 32B of the semiconductor device B23 and the starting substrate E3 using a screw 35a and a mother 36a directly connected to each other. The screw 35a and the mother 36a form a particular example of a fastener of the present disclosure and an example of a fastener of the present disclosure. The terminal section 322 of Exit terminals 32B of the semiconductor device B23 and the starting substrate E3 lie one on top of the other such that the mounting hole 323 and the mounting hole E31 essentially agree when viewed in the z direction. The screw 35a is through the mounting hole 323 and the mounting hole E31 passed through. The mother 36a is on the screw 35a screwed. The terminal section 322 of the exit terminal 32B of the semiconductor device B23 and the starting substrate E3 are by means of a fastening force of the screw 35a and the mother 36a attached (fixed) and directly connected to each other.

According to the present embodiment, the terminal section 322 of the exit terminal 32A of the first semiconductor module A21 (Semiconductor device B21 ) and the terminal section 312 of the entrance terminal 31A of the second semiconductor module A22 (Semiconductor device B22 ) using the screw 353 and the mother 363 directly connected to each other, which serve as the fixing means, as in the 20 to 22 , 24th and 25th is shown. With this configuration, the inductance can be in a connection path between the output terminal 32A and the entrance terminal 31A can be suppressed or reduced, and a responsiveness of the AC / DC converter unit C1 can be improved. Furthermore, the terminal section 322 of the exit terminal 32B of the first semiconductor module A21 (Semiconductor device B21 ) and the terminal section 312 of the entrance terminal 31B of the second semiconductor module A22 (Semiconductor device B22 ) using the screw 354 and the mother 364 directly connected to each other, which serve as the fixing means. With this configuration, the inductance can be in a connection path between the output terminal 32B and the entrance terminal 31B suppressed or reduced, and a response of the AC / DC converter unit C1 can be improved.

The terminal sections 312 and the terminal section 322 that opposite the sealing resin section 60 have shapes that extend straight in the y direction. This configuration can change the inductance in the terminal sections 312 and the terminal sections 322 suppress and is preferred for improving the response of the AC / DC DC C1 .

As a result of that the screw 353 and the mother 363 as well as the screw 354 and the mother 364 A reliable connection can be realized, and both the first semiconductor module, each serving as a fastening means when the fixing means are used A21 (Semiconductor device B21 ) as well as the second semiconductor module A22 (Semiconductor device B22 ) can be from the AC / DC converter unit C1 easily remove and then easily on the AC / DC converter unit C1 attach. This can be a replacement of both the first semiconductor module A21 (Semiconductor device B21 ) and the second semiconductor module A22 (Semiconductor device B22 ) facilitate.

In the present embodiment, the second section F212 of the connection terminal F21 directly with the terminal section 322 of the exit terminal 32A and the terminal section 312 of the entrance terminal 31A using the screw 353 and the mother 363 connected, which serve as the fixing means as it is in the 20 , 21 , 24th and 25th is shown. With this configuration, the inductance of a connection path between the first semiconductor module A21 (Semiconductor device B21 ), the second semiconductor module A22 (Semiconductor device B22 ) and the capacitor module F suppressed or reduced.

Also in the present embodiment, the second section F222 of the connection terminal F22 directly connected to the terminal section 322 of the exit terminal 32B and the terminal section 312 of the entrance terminal 31B using the screw 354 and the mother 364 that serve as the fixing means. With this configuration, the inductance of a connection path between the first semiconductor module A21 (Semiconductor device B21 ), the second semiconductor module A22 (Semiconductor device B22 ) and the capacitor module F suppressed or reduced.

Like it in the 20 , 21 and 23 is shown are the exit terminal D41 of the input module D and the terminal section 312 of the entrance terminal 31A of the first semiconductor module A21 (Semiconductor device B21 ) directly connected using the screw 351 and the mother 361 that serve as the fixing means. Also are the exit terminal D42 of the input module D and the terminal section 312 of the entrance terminal 31B of the first semiconductor module A21 (Semiconductor device B21 ) directly connected using the screw 352 and the mother 362 . With this configuration, the inductance or the inductive coupling can be connected in connection paths between the output terminals D41 and D42 and the entrance terminals 31A and 31B suppressed or reduced, and a response of the AC / DC converter unit C1 can be improved.

The exit terminals D41 and D42 and the terminal sections 312 have shapes that extend straight in the y direction. This configuration can be the inductance of the output terminals D41 and D42 and the terminal sections 312 suppress or reduce and is to improve the response of the AC / DC converter unit C1 prefers.

As a result of that the screw 351 and the mother 361 as well as the screw 352 and the mother 362 serve as a fastener when the fixing means can be used, a reliable connection can be realized, and both the input module D as well as the first semiconductor module A21 (Semiconductor device B21 ) can easily from the AC / DC converter unit C1 removed and then easily on the AC / DC converter unit C1 be attached. This facilitates replacement of both the input module D as well as the first semiconductor module A21 (Semiconductor device B21 ).

Like it in the 20 , 21 and 26 is shown are the terminal section 322 of the exit terminal 32A of the second semiconductor module A22 (Semiconductor device B22 ) and the entrance terminal H11 of the transformer module H directly connected using the screw 355 and the mother 365 that serve as the fixing means. Also are the terminal section 322 of the exit terminal 32B of the second semiconductor module A22 (Semiconductor device B22 ) and the entrance terminal H12 of the transformer module H directly connected using the screw 356 and the mother 366 that serve as the fixing means. With this configuration, the inductance can be in connection paths between the output terminals 32A and 32B and the entrance terminals H11 and H12 suppressed or reduced, and a response of the AC / DC converter unit C1 can be improved.

The terminal sections 322 and the entrance terminals H11 and H12 have shapes that extend straight in the y direction. This configuration can change the inductance of the terminal sections 322 and the entrance terminals H11 and H12 suppress or reduce and is to improve the response of the AC / DC converter unit C1 prefers.

Fasteners such as the screw and the nut are used to implement a reliable fixing 355 , 365 , and the screw and the nut 356 , 366 used. Such means also make it easy for both the second semiconductor module A22 (Semiconductor device B22 ) as well as the transformer module H from the AC / DC converter unit C1 to remove and then back to the AC / DC converter unit C1 to attach. This can replace both the second semiconductor module A22 (Semiconductor device B22 ) and the transformer module H facilitate.

Like it in the 20 and 27 is shown are the exit terminal H21 of the transformer module H and the terminal section 312 of the entrance terminal 31A of the semiconductor device B23 directly connected using the screw 357 and the mother 367 that serve as the fixing means. Also are the exit terminal H22 of the transformer module H and the terminal section 312 of the entrance terminal 31B of the semiconductor device B23 directly connected using the screw 358 and the mother 368 that serve as the fixing means. With this configuration, the inductance can be in connection paths between the output terminals H21 and H22 and the entrance terminals 31A and 31B suppressed or reduced, and a response of the AC / DC converter unit C1 can be improved.

The exit terminals H21 and H22 and the terminal sections 312 have shapes that extend straight in the y direction. This configuration can be the inductance of the output terminals H21 and H22 and the terminal sections 312 suppress or reduce and is to improve the response of the AC / DC converter unit C1 prefers.

As a result of that the screw 357 and the mother 367 and the screw 358 and the mother 368 serve as a fastener that can be used as the fixing means, a reliable connection can be realized, and both the transformer module H as well as the semiconductor device B23 can easily from the AC / DC converter unit C1 removed and then easily on the AC / DC converter unit C1 be attached. This can be a replacement of both the transformer module H as well as the semiconductor device B23 facilitate.

Like it in the 20 and 28 is shown are the terminal section 322 of the exit terminal 32A of the semiconductor device B23 and the starting substrate E3 directly connected using the screw 359 and the mother 369 that serve as the fixing means. Also are the terminal section 322 of the exit terminal 32B the semiconductor device B23 and the starting substrate E3 directly connected using the screw 35a and the mother 36a that serve as the fixing means. With this configuration, the inductance can be in connection paths between the output terminals 32A and 32B and the starting substrate E3 suppressed or reduced, and a response of the AC / DC converter unit C1 can be improved.

As a result of that the screw 359 and the mother 369 and the screw 35a and the mother 36a As the fastener used as the fixing means, a reliable connection can be realized, and the semiconductor device B23 can easily from the AC / DC converter unit C1 removed and then easily on the AC / DC converter unit C1 be attached. This can be a replacement or replacement of the semiconductor component B23 facilitate.

The 29 to 50 show variations and other embodiments of the present disclosure. It should be noted that in these figures, elements that are the same or similar to those in the above-described embodiment are given the same reference numerals as those used in the above-described embodiment.

[First variation of the AC / DC converter unit C1 ]

29 shows a first variation of the AC / DC converter unit C1 . An AC / DC converter unit C11 according to this variation differs from the AC / DC converter unit described above C1 in the arrangement of the first semiconductor module A21 , of the second semiconductor module A22 , the capacitor module F , of the isolated power supply module G and the semiconductor device B23 .

In this variation is the capacitor module F in the x-direction between the isolated power supply module G and both the first semiconductor module A21 as well as the second semiconductor module A22 arranged. Furthermore, the semiconductor device B23 arranged in the x direction at the same position as the semiconductor device B21 and the semiconductor device B22 and is opposite the center of the output module E offset in the x direction.

Similar to the AC / DC converter unit C1 this variation can also improve responsiveness. Furthermore, as can be understood from this variation, various changes to the arrangement of the first semiconductor module can A21 , of the second semiconductor module A22 , the capacitor module F , of the isolated power supply module G and the semiconductor device B23 to give examples.

[Second variation of the AC / DC converter unit C1 ]

30th shows a second variation of the AC / DC converter unit C1 . An AC / DC converter unit C12 according to this variation differs from the AC / DC converter unit described above C1 in the arrangement of the semiconductor device B23 .

The semiconductor component is in this variation B23 arranged in the x-direction at a position relative to the semiconductor device B21 and the semiconductor device B22 is moved. In other words, the semiconductor device B23 when viewed in the y direction from the semiconductor device B21 and the semiconductor device B22 spaced. This variation can, similar to the AC / DC converter unit C1 , improve responsiveness.

Third variation of the AC / DC converter unit C1 ]

The 31 to 33 show a third variation of the AC / DC converter unit C1 . An AC / DC converter unit C13 according to this variation differs from the AC / DC converter unit described above C1 in the way of specifying the exit terminals H21 and H22 , and the entrance terminals 31A and 31B and the exit terminals 32A and 32B of the semiconductor device B23 .

Like it in the 31 and 32 in this variation is the terminal section 312 of the entrance terminal 31A of the semiconductor device B23 directly attached to the starting substrate E3 using a welded section 377 , which is an example of a setting means. In the example shown is the terminal section 312 through a weld hole E32 passed through that in the starting substrate E3 is formed, and the welded portion 377 is provided there. It should be noted that the exact welding process of the welded section 377 is not restricted. It is possible to use a method of forming a weld bead using a so-called welding rod, or a method of forming a weld by melting the terminal section 312 etc. This also applies to the welded sections described below.

Likewise is the terminal section 312 of the entrance terminal 31B of the semiconductor device B23 directly on the starting substrate E3 committed using a welded section 378 , which is an example of a setting means. In the example shown is the terminal section 312 through a weld hole E32 passed through that in the starting substrate E3 is formed, and the welded portion 378 will be provided. It should be noted that the exact welding process of the welded section 378 is not restricted.

Like it in the 31 and 33 is shown is the terminal section 322 of the exit terminal 32A of the semiconductor device B23 directly on the starting substrate E3 fixed, using a welded section 379 , which is an example of a setting means. In the example shown is the terminal section 322 through a weld hole E32 passed through that in the starting substrate E3 is formed, and the welded portion 379 is provided. It should be noted that the exact welding process of the welded section 379 is not restricted.

Likewise is the terminal section 322 of the exit terminal 32B of the semiconductor device B23 directly on the starting substrate E3 using a welded section 37a which is an example of a means of determination. In the example shown is the terminal section 322 through a weld hole E32 passed through that in the starting substrate E3 is formed, and the welded portion 37a is provided. It should be noted that the exact welding process of the welded section 37a is not restricted.

Similar to the AC / DC converter unit C1 this variation can also improve responsiveness. The use of the welded sections 377 , 378 , 379 and 37a as the setting means can contribute to suppressing or reducing the inductance. A configuration in which elements in the present disclosure are directly connected to each other includes a case in which the elements are fixed to each other via a weld line derived from a welding rod.

Fourth variation of the AC / DC converter unit C1 ]

34 shows a fourth variation of the AC / DC converter unit C1 . An AC / DC converter unit C14 according to this variation differs from the AC / DC converter unit described above C13 in the arrangement of the first semiconductor module A21 , of the second semiconductor module A22 , the capacitor module F , of the isolated power supply module G and the semiconductor device B23 .

In this variation is the capacitor module F in the x-direction between the isolated power supply module G and both the first semiconductor module A21 as well as the second semiconductor module A22 arranged. Furthermore, the semiconductor device B23 arranged in the x direction at the same position as the semiconductor device B21 and the semiconductor device B22 and is opposite the center of the output module E offset in the x direction.

Similar to the AC / DC converter unit C1 this variation can also improve the response behavior. Furthermore, as is evident from this variation, various changes in the arrangement of the first semiconductor module can A21 , of the second semiconductor module A22 , the capacitor module F , of the isolated power supply module G and the semiconductor device B23 to give examples.

[Fifth variation of the AC / DC converter unit C1 ]

35 shows a fifth variation of the AC / DC converter unit C1 . An AC / DC converter unit C15 according to this variation differs from the AC / DC converter unit described above C13 in the arrangement of the semiconductor device B23 .

The semiconductor component is in this variation B23 arranged at a position in the x-direction with respect to the semiconductor device B21 and the semiconductor device B22 is shifted. In other words, the semiconductor device B23 when viewed in the y direction from the semiconductor device B21 and the semiconductor device B22 spaced. Similar to the AC / DC converter unit C1 this variation can also improve the response behavior.

Second Embodiment

The 36 to 42 show an AC / DC converter unit according to a second embodiment of the present disclosure. An AC / DC converter unit C2 according to the present embodiment differs from the above-described embodiment in the manner of setting the input terminals 31A and 31B and the exit terminals 32A and 32B of the semiconductor components B21 and B22 .

Like it in the 36 to 38 is shown in the present embodiment are the exit terminal D41 of the input module D and the terminal section 312 of the entrance terminal 31A of the first semiconductor module A21 (Semiconductor device B21 ) directly connected to each other using a welded section 371 , which serves as a fixing means. The welding process of the welded section 371 is not restricted. Furthermore, the exit terminal D42 of the input module D and the terminal section 312 of the entrance terminal 31B of the first semiconductor module A21 (Semiconductor device B21 ) directly connected to each other using a welded section 372 , which serves as a fixing means. The welding process of the welded section 372 is not restricted.

Furthermore, as in the 36 , 37 and 39 to 41, the terminal section 322 of the exit terminal 32A of the first semiconductor module A21 (Semiconductor device B21 ) and the terminal section 312 of the entrance terminal 31A of the second semiconductor module A22 (Semiconductor device B22 ) directly connected to each other using a welded section 373 , which serves as a fixing means. Also in the present embodiment, the second section F212 of the connection terminal F21 directly with the terminal section 322 of the exit terminal 32A and the terminal section 312 of the entrance terminal 31A connected, using the welded portion 373 . By doing The example shown includes the welded section 373 a welded section 373a and a welded section 373b . The welded section 373a sets the terminal section 322 on the second section F212 firmly. The welded section 373b sets the terminal section 312 on the second section F212 firmly. It should be noted that the exact configuration of the welded section 373 is not restricted. For example, a configuration is also possible in which the terminal section 322 , the terminal section 312 and the second section F212 together using a single welded section 373 are set in a state where the terminal section 322 , the terminal section 312 and the second section F212 are all superimposed.

Like it in the 36 , 37 and 39 to 41 is shown are the terminal section 322 of the exit terminal 32B of the first semiconductor module A21 (Semiconductor device B21 ) and the terminal section 312 of the entrance terminal 31B of the second semiconductor module A22 (Semiconductor device B22 ) directly connected to each other using a welded section 374 , which serves as a fixing means. Also in the present embodiment, the second section F222 of the connection terminal F22 directly with the terminal section 322 of the exit terminal 32A and the terminal section 312 of the entrance terminal 31A connected, using the welded portion 374 . In the example shown, the welded section includes 374 a welded section 374a and a welded section 374b . The welded section 374a sets the terminal section 322 on the second section F222 firmly. The welded section 374b sets the terminal section 312 on the second section F222 firmly. It should be noted that the exact configuration of the welded section 374 is not restricted. For example, a configuration is also possible in which the terminal section 322 , the terminal section 312 and the second section F222 together using a single welded section 374 are set in a state where the terminal section 322 , the terminal section 312 and the second section F222 are placed together or all on top of each other.

Like it in the 36 , 37 and 42 is shown are the exit terminal 32A of the second semiconductor module A22 (Semiconductor device B22 ) and the entrance terminal H11 of the transformer module H directly connected to each other using a welded section 375 , which serves as a fixing means. The welding process of the welded section 375 is not restricted. Also are the exit terminal 32B of the second semiconductor module A22 (Semiconductor device B22 ) and the entrance terminal H12 of the transformer module H directly connected to each other using a welded section 376 , which serves as a fixing means. The welding process of the welded section 376 is not restricted.

Similar to the AC / DC converter unit C1 This embodiment can also improve the response behavior. Furthermore, there is no limitation to the fastener or the welded portions, and various types of fasteners can be used as long as the way of fastening contributes to suppressing or reducing the inductance.

[First variation of the AC / DC converter unit C2 ]

43 shows a first variation of the AC / DC converter unit C2 . An AC / DC converter unit C21 according to this variation differs from the AC / DC converter unit described above C2 in the arrangement of the first semiconductor module A21 , of the second semiconductor module A22 , the capacitor module F and the isolated power supply module G .

In this variation is the capacitor module F in the x-direction between the isolated power supply module G and both the first semiconductor module A21 as well as the second semiconductor module A22 arranged. Furthermore, the position of the semiconductor component differs B23 in the x direction from the positions of the semiconductor device B21 and the semiconductor device B22 . Similar to the AC / DC converter unit C2 this variation can also improve the response behavior.

[Second variation of the AC / DC converter unit C2 ]

44 shows a second variation of the AC / DC converter unit C2 . An AC / DC converter unit C22 according to this variation differs from the AC / DC converter unit described above C2 in the arrangement of the semiconductor device B23 .

The semiconductor component is in this variation B23 arranged at a position which is in the x-direction from the positions of the semiconductor device B21 and the semiconductor device B22 differs, and is in the x-direction from the center of the output module E transferred. Similar to the AC / DC converter unit C2 this variation can also improve the response behavior.

Third Embodiment: Semiconductor Module A3 ]

The 45 to 47 show a semiconductor module according to a third embodiment of the present revelation. A semiconductor module A3 according to the present embodiment differs from the above-described embodiments mainly in the configurations of the input / output terminals 3A and the tax terminals 3B and the particular configuration of the first substrate 7 .

The semiconductor module A3 includes a semiconductor device B3 . The semiconductor device B3 has, for example, the same function as the semiconductor component described above B1 . The semiconductor device B3 includes a variety of input / output terminals 3A and a variety of tax terminals 3B . The multitude of input / output terminals 3A corresponds, for example, to the entrance terminal 31A , the entrance terminal 31B , the exit terminal 32A and the exit terminal 32B described above. The variety of tax terminals 3B correspond, for example, to the gate terminals 33 and the acquisition terminals 34 described above.

In the present embodiment, the plurality of input / output terminals include 3A Entry / exit terminals facing the sealing resin section 60 protrude toward one side in the x direction, and input / output terminals facing the sealing resin portion 60 protrude to the other side in the x direction. The multitude of input / output terminals 3A are namely opposite to the sealing resin portion 60 towards both sides in the x direction. Also have the input / output terminals 3A in the present embodiment, each in the form of a flat plate or a band plate, the thickness direction of which extends in the z direction.

The variety of tax terminals 3B faces the sealing resin section 60 towards one side in the y direction. The variety of tax terminals 3B are with the first substrate 7 using the first connector 8th connected.

Like it in 47 is shown is the plurality of protrusions 66 on the sealing resin section 60 educated. The multitude of tabs 66 define a positional relationship between the first substrate 7 and the sealing resin portion 60 (Semiconductor device B3 ) in the z direction by being on the first back substrate surface 72 of the first substrate 7 touch or toast. The number of tabs 66 is not limited and in the example shown there are four protrusions 66 at the respective four corners of the sealing resin section 60 arranged.

Like it in 46 are shown are on the first substrate 7 a first region in the present embodiment L1 , a second region L2 and a third region L3 set or determined. The first region L1 , the second region L2 and the third region L3 are portions of a wiring pattern that are on the first substrate 7 is formed, and are spaced from each other.

The variety of electronic components 700 contain an electronic component 722 and an electronic component 723 . The electronic component 722 is assembled so that it is the first region L1 and the second region L2 spanning connects ("mounted spanning"). The electronic component 723 is assembled so that it is the first region L1 and the third region L3 spanned or spanning connects. The electronic components 722 and 723 are, for example, dedicated control ICs for controlling switching elements.

A connector 721 is on the first substrate 7 assembled. The connector 721 serves to connect the semiconductor module A3 with an external circuit.

In the present embodiment as well, a connection of terminals can be facilitated and a more reliable electrical connection can be realized. Furthermore, the present embodiment is suitable for a case in which a plurality of semiconductor modules A3 be used in a state where they are arranged in the y-direction because of the plurality of input / output terminals 3A protrude to both sides in the x direction.

[Variation of the third embodiment: semiconductor module A31 ]

The 48 to 50 show a variation of the semiconductor module A3 . A semiconductor module A31 according to this variation, it differs from the above-described embodiment mainly in the configuration of the input / output terminals 3A .

The variety of control terminals stands with this variation 3B against the sealing resin section 60 toward one side in the y direction, and the variety of input / output terminals 3A faces the sealing resin section 60 towards the other side in the y direction. The multitude of input / output terminals 3A is arranged in two rows in the x direction.

Furthermore, are on the first substrate 7 an electronic component 724 and an electronic component 725 assembled. The electronic component 724 is mounted so that it is together with the electronic component 722 the first region L1 and the second region L2 spanning connects. The Electronic component 725 is mounted so that it is together with the electronic component 723 the first region L1 and the third region L3 spanning connects. The electronic components 724 and 725 are, for example, isolation transformers that change a voltage and isolate an input side and an output side from one another.

With this variation, too, a connection of terminals can be facilitated and a more reliable electrical connection can be realized. There is also a multitude of input / output terminals 3A collectively towards the other side in the y direction. Therefore, if a variety of semiconductor modules A3 All input / output terminals are located in the x direction 3A towards the other side in the y direction. This is advantageous in that it is when there are external sections with a variety of input / output terminals 3A a variety of semiconductor modules A31 to be connected, it is only necessary to connect or connect the external sections only from the other side in the y direction.

The semiconductor module and the AC / DC converter unit according to the present disclosure are not limited to the embodiment described above. Various design changes can be freely made to the specific configurations of portions of the semiconductor module and the AC / DC converter unit according to the present disclosure.

[Appendix 1]

• einem Halbleiterbauteil, das eine Vielzahl von Halbleiterelementen, eine Vielzahl von Eingangs/Ausgangs-Terminals, eine Vielzahl von Steuer-Terminals und einen Abdichtungsharzabschnitt aufweist, der die Vielzahl von Halbleiterelementen bedeckt;
• einem ersten Substrat; und
• einem ersten Verbinder, der an dem ersten Substrat festgelegt und mit den Steuer-Terminals verbunden ist,
• wobei der erste Verbinder eine relative Bewegung der Steuer-Terminals in wenigstens einer von einer ersten Richtung und einer zweiten Richtung ermöglicht, die senkrecht sind zu einer Dickenrichtung des ersten Substrats.

Semiconductor module with:

• a semiconductor device having a plurality of semiconductor elements, a plurality of input / output terminals, a plurality of control terminals, and a sealing resin portion covering the plurality of semiconductor elements;
• a first substrate; and
• a first connector attached to the first substrate and connected to the control terminals,
• wherein the first connector enables relative movement of the control terminals in at least one of a first direction and a second direction that are perpendicular to a thickness direction of the first substrate.

[Appendix 2]

Semiconductor module according to Appendix 1 ,
wherein the control terminals each include an upright portion that extends in the thickness direction, and
the first connector having an insertion hole through which the upright portion is passed.

[Appendix 3]

Semiconductor module according to Appendix 2nd ,
the control terminals each have a base portion protruding from the sealing resin portion in the second direction, and
the upright portion being connected to a leading end of the base portion.

[Appendix 4]

Semiconductor module according to Appendix 2nd or 3rd ,
wherein the plurality of control terminals are arranged or lined up in the first direction.

[Appendix 5]

Semiconductor module according to Appendix 4th ,
the plurality of control terminals are arranged on both sides in the second direction, and the sealing resin portion is arranged between the plurality of control terminals.

[Appendix 6]

Semiconductor module according to Appendix 4th or 5 ,
wherein the plurality of input / output terminals are arranged in the first direction on the outer side of the plurality of control terminals.

[Appendix 7]

Semiconductor module according to Appendix 4th ,
the plurality of input / output terminals are arranged on both sides in the second direction, and the sealing resin portion is arranged between the plurality of input / output terminals.

[Appendix 8]

Semiconductor module according to any of the appendixes 2nd to 7 ,
the first substrate having input / output through sections through which the input / output terminals are passed.

[Appendix 9]

Semiconductor module according to any of the appendixes 2nd to 8th ,
wherein the first substrate has a first substrate front surface and a first substrate rear surface facing opposite sides in the thickness direction, and
wherein the first substrate back surface faces or faces the sealing resin portion in the thickness direction.

[Appendix 10]

Semiconductor module according to Appendix 9 ,
wherein the first connector is disposed on a side of the first substrate back surface in the thickness direction with respect to the first substrate.

[Appendix 11]

Semiconductor module according to Appendix 10th ,
wherein a plurality of the first connectors are arranged in the first direction.

[Appendix 12]

Semiconductor module according to Appendix 11 ,
wherein the plurality of first connectors are arranged on both sides in the second direction, and the sealing resin portion is arranged between the plurality of first connectors.

[Appendix 13]

Semiconductor module according to any of the appendixes 10th to 12th ,
wherein the first substrate has a control passage portion through which a portion of the first connector is passed.

[Appendix 14]

Semiconductor module according to any of the appendixes 9 to 13 , further with a plurality of electronic components that are mounted on the first substrate.

[Appendix 15]

Semiconductor module according to Appendix 14 ,
wherein the plurality of electronic components include an electronic component that is mounted on the first substrate front surface.

[Appendix 16]

Semiconductor module according to Appendix 14 or 15 ,
wherein the plurality of electronic components include an electronic component that is mounted on the first substrate rear surface.

[Appendix 17]

Semiconductor module according to any of the appendixes 9 to 16 ,
wherein the sealing resin portion has a through hole through which a bolt in the thickness direction is to be passed, and
wherein the first substrate has a recessed portion within which the through hole is disposed when viewed in the thickness direction.

[Appendix 18]

• einem Eingangsmodul, in das Wechselstromleistung eingegeben wird;
• einem ersten Halbleitermodul, das durch das Halbleitermodul gemäß einem beliebigen der Ansprüche 1 bis 5 gebildet ist, wobei dem ersten Halbleitermodul ein Wechselstromausgang von dem Eingangsmodul eingegeben wird, und wobei das erste Halbleitermodul einen Gleichstrom bzw. Gleichstromleistung ausgibt;
• einem zweiten Halbleitermodul, das durch das Halbleitermodul gemäß einem beliebigen der Ansprüche 1 bis 5 gebildet ist, wobei dem zweiten Halbleitermodul Gleichstromleistung eingegeben wird, die von dem ersten Halbleitermodul ausgegeben wird, und das Gleichstromleistung ausgibt; und
• einem Ausgangsmodul, dem Gleichstromleistung eingegeben wird, die von dem zweiten Halbleitermodul ausgegeben wird, und das Gleichstromleistung ausgibt,
• wobei ein Ausgangs-Terminal, das in der Vielzahl von Eingangs/Ausgangs-Terminals eines ersten Halbleiterbauteils des ersten Halbleitermoduls enthalten ist, und ein Eingangs-Terminal, das in der Vielzahl von Eingangs/Ausgangs-Terminals eines zweiten Halbleiterbauteils des zweiten Halbleitermoduls enthalten ist, unter Verwendung von einem ersten Festlegungsmittel direkt miteinander verbunden sind.

AC / DC converter unit with:

• an input module into which AC power is input;
• a first semiconductor module formed by the semiconductor module according to any one of claims 1 to 5, wherein the first semiconductor module is input with an AC output from the input module, and wherein the first semiconductor module outputs a DC power;
• a second semiconductor module formed by the semiconductor module according to any one of claims 1 to 5, wherein the second semiconductor module is input with DC power output from the first semiconductor module and outputs DC power; and
• an output module that is input with DC power output from the second semiconductor module and that outputs DC power,
• an output terminal included in the plurality of input / output terminals of a first semiconductor device of the first semiconductor module and an input terminal included in the plurality of input / output terminals of a second semiconductor device of the second semiconductor module, are directly connected to each other using a first fixing means.

[Appendix 19]

AC / DC converter unit according to Appendix 18th , wherein the first fixing means is a fastener.

[Appendix 20]

AC / DC converter unit according to Appendix 18th , wherein the first fixing means is a welded section.

[Appendix 21]

AC / DC converter unit according to any of the appendices 18th to 20 , wherein the first semiconductor module is a PFC module.

[Appendix 22]

AC / DC converter unit according to Appendix 21 , wherein the second semiconductor module is an LLC module.

[Appendix 23]

AC / DC converter unit according to Appendix 22 ,
wherein the input module has an output terminal and
wherein the output terminal of the input module and an input terminal included in the plurality of input / output terminals of the first semiconductor module are directly connected to each other using a second setting means.

[Appendix 24]

AC / DC converter unit according to Appendix 23 , wherein the second fixing means is a fastener.

[Appendix 25]

AC / DC converter unit according to Appendix 23 , wherein the second fixing means is a welded section.

[Appendix 26]

AC / DC converter unit according to any of the appendices 23 to 25th , with a capacitor module, which is connected to the output terminal of the first semiconductor module and the input terminal of the second semiconductor module.

[Appendix 27]

AC / DC converter unit according to Appendix 26 , wherein the capacitor module is directly connected to the output terminal of the first semiconductor module and the input terminal of the second semiconductor module, using the first fixing means.

[Appendix 28]

AC / DC converter unit according to Appendix 26 or 27 , further with a transformer module, which is arranged between the second semiconductor module and the output module.

[Appendix 29]

AC / DC converter unit according to Appendix 28 ,
wherein the transformer module has an input terminal and an output terminal, and
an output terminal included in the plurality of input / output terminals of the second semiconductor module and the input terminal of the transformer module being directly connected to each other using a third setting means.

[Appendix 30]

AC / DC converter unit according to Appendix 29 , wherein the third fixing means is a fastener.

[Appendix 31]

AC / DC converter unit according to Appendix 29 , the third fixing means being a welded section.

[Appendix 32]

AC / DC converter unit according to Appendix 31 , wherein the output module has a third semiconductor component, which has an input terminal and an output terminal, and
wherein the output terminal of the transformer module and the input terminal of the third semiconductor component are directly connected to one another, using a fourth fixing means.

[Appendix 33]

AC / DC converter unit according to Appendix 32 , wherein the fourth fixing means is a fastener.

[Appendix 34]

AC / DC converter unit according to Appendix 32 or 33 , wherein the output module has an output substrate, and
wherein the output terminal of the third semiconductor device is directly connected to the output substrate using a fifth setting means.

[Appendix 35]

AC / DC converter unit according to Appendix 34 , wherein the fifth fixing means is a fastener.

QUOTES INCLUDE IN THE DESCRIPTION

This list of documents listed by the applicant has been generated automatically and is only included for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Patent literature cited

• JP 2000299419 A [0003]
• JP 2018113163 A [0076]
• JP 2018063886 A [0076]
• JP 2017139101 A [0076]

Claims (35)

Semiconductor module with: a semiconductor device having a plurality of semiconductor elements, a plurality of input / output terminals, a plurality of control terminals, and a sealing resin portion covering the plurality of semiconductor elements; a first substrate; and a first connector attached to the first substrate and connected to the control terminals, wherein the first connector enables relative movement of the control terminals in at least one of a first direction and a second direction that are perpendicular to a thickness direction of the first substrate. Semiconductor module after Claim 1 wherein the control terminals each include an upright portion that extends in the thickness direction, and wherein the first connector has an insertion hole through which the upright portion is passed. Semiconductor module after Claim 2 wherein the control terminals each have a base portion protruding in the second direction from the sealing resin portion, and the upright portion is connected to a leading end of the base portion. Semiconductor module after Claim 2 or 3rd , wherein the plurality of control terminals are arranged or lined up in the first direction. Semiconductor module after Claim 4 wherein the plurality of control terminals are arranged on both sides in the second direction, and the sealing resin portion is arranged between the plurality of control terminals. Semiconductor module after Claim 4 or 5 , wherein the plurality of input / output terminals are arranged in the first direction on the outer side of the plurality of control terminals. Semiconductor module after Claim 4 wherein the plurality of input / output terminals are arranged on both sides in the second direction, and the sealing resin portion is arranged between the plurality of input / output terminals. Semiconductor module according to any of the Claims 2 to 7 , wherein the first substrate has input / output passage sections through which the input / output terminals are passed. Semiconductor module according to any of the Claims 2 to 8th , wherein the first substrate has a first substrate front surface and a first substrate rear surface that face each other in the thickness direction, and wherein the first substrate back surface faces the sealing resin portion in the thickness direction. Semiconductor module after Claim 9 , wherein the first connector is arranged in the thickness direction with respect to the first substrate on one side of the first substrate back surface. Semiconductor module after Claim 10 , wherein a plurality of the first connectors are arranged in the first direction. Semiconductor module after Claim 11 , wherein the plurality of first connectors are arranged on both sides in the second direction, and the sealing resin portion is arranged between the plurality of first connectors. Semiconductor module according to any of the Claims 10 to 12th , wherein the first substrate has a control passage portion through which a portion of the first connector is passed. Semiconductor module according to any of the Claims 9 to 13 , further with a plurality of electronic components that are mounted on the first substrate. Semiconductor module after Claim 14 , wherein the plurality of electronic components include an electronic component that is mounted on the first substrate front surface. Semiconductor module after Claim 14 or 15 , wherein the plurality of electronic components include an electronic component that is mounted on the first substrate back surface. Semiconductor module according to any of the Claims 9 to 16 wherein the sealing resin portion has a through hole through which a bolt in the thickness direction is to be passed, and wherein the first substrate has a recessed portion within which the through hole is located when viewed in the thickness direction. An AC / DC converter unit comprising: an input module into which AC power is input; a first semiconductor module that the semiconductor module according to any of the Claims 1 to 5 is formed, the first semiconductor module an AC output is input from the input module, and wherein the first semiconductor module outputs a DC power; a second semiconductor module that the semiconductor module according to any of the Claims 1 to 5 is formed, the second semiconductor module is input with DC power output from the first semiconductor module and the DC power output; and an output module that is input with DC power output from the second semiconductor module and that outputs DC power, an output terminal included in the plurality of input / output terminals of a first semiconductor device of the first semiconductor module and an input -Terminal, which is contained in the plurality of input / output terminals of a second semiconductor component of the second semiconductor module, are directly connected to one another using a first setting means. AC / DC converter unit after Claim 18 , wherein the first fixing means is a fastener. AC / DC converter unit after Claim 18 , wherein the first fixing means is a welded section. AC / DC converter unit according to any of the Claims 18 to 20 , wherein the first semiconductor module is a PFC module. AC / DC converter unit after Claim 21 , wherein the second semiconductor module is an LLC module. AC / DC converter unit after Claim 22 , wherein the input module has an output terminal, and wherein the output terminal of the input module and an input terminal included in the plurality of input / output terminals of the first semiconductor module are directly connected using a second one Fixing means. AC / DC converter unit after Claim 23 , wherein the second fixing means is a fastener. AC / DC converter unit after Claim 23 , wherein the second fixing means is a welded section. AC / DC converter unit according to any of the Claims 23 to 25th , further with a capacitor module, which is connected to the output terminal of the first semiconductor module and the input terminal of the second semiconductor module. AC / DC converter unit after Claim 26 , wherein the capacitor module is directly connected to the output terminal of the first semiconductor module and the input terminal of the second semiconductor module, using the first fixing means. AC / DC converter unit after Claim 26 or 27 , further with a transformer module, which is arranged between the second semiconductor module and the output module. AC / DC converter unit after Claim 28 , wherein the transformer module has an input terminal and an output terminal, and wherein an output terminal, which is contained in the plurality of input / output terminals of the second semiconductor module, and the input terminal of the transformer module are connected directly to one another, using a third setting means. AC / DC converter unit after Claim 29 , wherein the third fixing means is a fastener. AC / DC converter unit after Claim 29 , the third fixing means being a welded section. AC / DC converter unit after Claim 31 , wherein the output module has a third semiconductor component having an input terminal and an output terminal, and wherein the output terminal of the transformer module and the input terminal of the third semiconductor component are directly connected to one another, using a fourth setting means. AC / DC converter unit after Claim 32 , wherein the fourth fixing means is a fastener. AC / DC converter unit after Claim 32 or 33 , wherein the output module has an output substrate, and wherein the output terminal of the third semiconductor device is connected directly to the output substrate, using a fifth setting means. AC / DC converter unit after Claim 34 , wherein the fifth fixing means is a fastener.

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