DE2113855A1 - Supraleitender Oszillator und Verfahren zur Herstellung desselben - Google Patents
Supraleitender Oszillator und Verfahren zur Herstellung desselbenInfo
- Publication number
- DE2113855A1 DE2113855A1 DE19712113855 DE2113855A DE2113855A1 DE 2113855 A1 DE2113855 A1 DE 2113855A1 DE 19712113855 DE19712113855 DE 19712113855 DE 2113855 A DE2113855 A DE 2113855A DE 2113855 A1 DE2113855 A1 DE 2113855A1
- Authority
- DE
- Germany
- Prior art keywords
- josephson
- superconducting
- cavity
- electrodes
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title description 10
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 18
- 230000005670 electromagnetic radiation Effects 0.000 claims description 16
- 238000009760 electrical discharge machining Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 12
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 238000010587 phase diagram Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 claims description 2
- 238000001953 recrystallisation Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000000523 sample Substances 0.000 claims 1
- 230000001427 coherent effect Effects 0.000 description 17
- 230000005855 radiation Effects 0.000 description 17
- 230000004888 barrier function Effects 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 230000005641 tunneling Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 229910052734 helium Inorganic materials 0.000 description 4
- 239000001307 helium Substances 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 230000011514 reflex Effects 0.000 description 4
- 230000005668 Josephson effect Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S1/00—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range
- H01S1/02—Masers, i.e. devices using stimulated emission of electromagnetic radiation in the microwave range solid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1683—Solid materials using superconductivity, e.g. provided with Josephson junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0912—Manufacture or treatment of Josephson-effect devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/853—Oscillator
- Y10S505/854—Oscillator with solid-state active element
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S505/00—Superconductor technology: apparatus, material, process
- Y10S505/825—Apparatus per se, device per se, or process of making or operating same
- Y10S505/917—Mechanically manufacturing superconductor
- Y10S505/922—Making josephson junction device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US1578870A | 1970-03-02 | 1970-03-02 | |
| US21640A US3628184A (en) | 1970-03-02 | 1970-03-23 | Superconducting oscillators and method for making the same |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2113855A1 true DE2113855A1 (de) | 1971-10-21 |
Family
ID=26687798
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19712113855 Pending DE2113855A1 (de) | 1970-03-02 | 1971-03-23 | Supraleitender Oszillator und Verfahren zur Herstellung desselben |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US3628184A (https=) |
| JP (1) | JPS5517500B1 (https=) |
| DE (1) | DE2113855A1 (https=) |
| FR (1) | FR2081606B1 (https=) |
| GB (1) | GB1318819A (https=) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4177476A (en) * | 1978-05-05 | 1979-12-04 | Sperry Rand Corporation | Multiple weak-link SQUID with non-superconductive material weak-links |
| US4181902A (en) * | 1978-07-12 | 1980-01-01 | Wisconsin Alumni Research Foundation | Fluxon oscillators utilizing a ring shaped Josephson junction |
| US4245161A (en) * | 1979-10-12 | 1981-01-13 | The United States Of America As Represented By The Secretary Of The Army | Peierls-transition far-infrared source |
| US5114912A (en) * | 1991-05-13 | 1992-05-19 | The United States Of America As Represented By The Secretary Of Commerce | Two-dimensional, Josephson-array, voltage-tunable, high-frequency oscillator |
| JP3375089B2 (ja) * | 1992-06-09 | 2003-02-10 | 住友特殊金属株式会社 | 電子スピン共鳴用薄板空胴共振器 |
| US5854604A (en) * | 1997-05-12 | 1998-12-29 | Northrop Grumman Corporation | High-power waveform generator |
| US6313803B1 (en) * | 2000-01-07 | 2001-11-06 | Waveband Corporation | Monolithic millimeter-wave beam-steering antenna |
| US6730370B1 (en) * | 2000-09-26 | 2004-05-04 | Sveinn Olafsson | Method and apparatus for processing materials by applying a controlled succession of thermal spikes or shockwaves through a growth medium |
| WO2004079893A2 (en) * | 2003-03-03 | 2004-09-16 | K.U. Leuven Research & Development | Generation of electric oscillations by continuous, supercooled superconductors with an applied voltage |
| CN102694117B (zh) * | 2012-05-25 | 2015-08-19 | 中国科学院上海微系统与信息技术研究所 | 一种基于超导纳米线的高频振荡器及其制备方法 |
| NL2016442B1 (en) * | 2016-03-16 | 2017-10-05 | Univ Delft Tech | An apparatus and method for microwave generation and amplification by stimulated emission of radiation |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3386050A (en) * | 1966-06-29 | 1968-05-28 | Bell Telephone Labor Inc | Superconducting tunneling devices with improved impedance matching to resonant cavities |
| US3600644A (en) * | 1969-03-06 | 1971-08-17 | Ford Motor Co | Superconductor-normal metal circuit elements exhibiting josephson effects |
| US3649356A (en) * | 1969-12-31 | 1972-03-14 | Nasa | Electrical insulating-layer process |
-
1970
- 1970-03-23 US US21640A patent/US3628184A/en not_active Expired - Lifetime
-
1971
- 1971-01-29 JP JP289471A patent/JPS5517500B1/ja active Pending
- 1971-02-02 FR FR7104516A patent/FR2081606B1/fr not_active Expired
- 1971-03-23 DE DE19712113855 patent/DE2113855A1/de active Pending
- 1971-04-19 GB GB2270271A patent/GB1318819A/en not_active Expired
- 1971-06-10 US US00151885A patent/US3778893A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| FR2081606B1 (https=) | 1974-05-31 |
| US3778893A (en) | 1973-12-18 |
| US3628184A (en) | 1971-12-14 |
| JPS5517500B1 (https=) | 1980-05-12 |
| JPS461868A (https=) | 1971-10-05 |
| FR2081606A1 (https=) | 1971-12-10 |
| GB1318819A (en) | 1973-05-31 |
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