DE2032302C2 - Method for operating a bonding device - Google Patents
Method for operating a bonding deviceInfo
- Publication number
- DE2032302C2 DE2032302C2 DE2032302A DE2032302A DE2032302C2 DE 2032302 C2 DE2032302 C2 DE 2032302C2 DE 2032302 A DE2032302 A DE 2032302A DE 2032302 A DE2032302 A DE 2032302A DE 2032302 C2 DE2032302 C2 DE 2032302C2
- Authority
- DE
- Germany
- Prior art keywords
- wire
- contact
- tip
- contact surface
- contacting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 10
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 1
- 239000004020 conductor Substances 0.000 description 8
- 238000004804 winding Methods 0.000 description 6
- 239000000835 fiber Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
- B23K20/005—Capillary welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/741—Apparatus for manufacturing means for bonding, e.g. connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/4823—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a pin of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/788—Means for moving parts
- H01L2224/78801—Lower part of the bonding apparatus, e.g. XY table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85203—Thermocompression bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01055—Cesium [Cs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S228/00—Metal fusion bonding
- Y10S228/904—Wire bonding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49826—Assembling or joining
- Y10T29/49838—Assembling or joining by stringing
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Mechanical Engineering (AREA)
- Wire Bonding (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Die Erfindung bezieht sich auf ein Verfahren zum Betrieb einer Bondvorrichtung gemäß dem Oberbegriff des Patentanspruchs 1.The invention relates to a method for operating a bonding device according to the preamble of patent claim 1.
Ein solches Verfahren ist aus der US-PS 32 50 452 bekannt. Dieses, bei der Herstellung von Halbleitervorrichtungen, beispielsweise Transistoren, angewendete Verfahren wird halbautomatisch ausgeführt, wobei insbesondere das automatische Bereitstellen eines abgemessenen Längenstücks eines feinen Drahts, das Bilden einer kleinen Kugel am Drahtende, das Verbinden des Drahts mit einer Kontaktfläche des Halbleiterbauelements und das anschließende Abtrennen des Drahts automatisch ausgeführt werden. Das Verfahren wird dabei so ausgeführt, daß der Draht auf der Vorratsspule stets unter einer geeigneten Zugspannung gehalten wird, damit der Drahtwickel nach dem Durchtrennen des Drahts nicht locker wird. Diese Zugspannung wirkt zu jeder Zeit auf den Draht ein, also auch zwangsläufig während des Anbringens des Drahts am Halbleiterbauelement. Bei der Herstellung von Halbleiterbauelementen hat es sich als problematisch erwiesen, wenn die Drähte an den Kontaktflächen unter Zugspannung angebracht werden. Diese Zugspannung kann zur Folge haben, daß sich der Draht an einem späteren Zeitpunkt wieder von der Kontaktfläche löst, was einen Ausfall des Halbleiterbauelements zur Folge hat.Such a method is known from US-PS 32 50 452. This method, used in the manufacture of semiconductor devices, for example transistors, is carried out semi-automatically, in particular the automatic provision of a measured length of a fine wire, the formation of a small ball at the end of the wire, the connection of the wire to a contact surface of the semiconductor component and the subsequent severing of the wire are carried out automatically. The method is carried out in such a way that the wire on the supply spool is always kept under a suitable tensile stress so that the wire coil does not become loose after the wire is severed. This tensile stress acts on the wire at all times, i.e. also inevitably during the attachment of the wire to the semiconductor component. In the manufacture of semiconductor components, it has proven problematic if the wires are attached to the contact surfaces under tensile stress. This tensile stress can result in the wire becoming detached from the contact surface again at a later point in time, which leads to the failure of the semiconductor component.
Auch aus der US-PS 33 63 18 ist es bekannt, auf den zum Verbinden von Kontaktflächen an Halbleiterbauelementen verwendeten Draht ständig eine Zugspannung auszuüben, damit der auf die Vorratsrolle gewikkelte Draht stets straff gewickelt bleibt und nicht aufspringt.It is also known from US-PS 33 63 18 to constantly exert a tensile stress on the wire used to connect contact surfaces on semiconductor components so that the wire wound onto the supply roll always remains tightly wound and does not spring open.
Der Erfindung liegt die Aufgabe zugrunde, ein Verfahren der eingangs geschilderten Art so weiterzubilden, daß die an den Kontaktflächen gebildeten Verbindungen möglichst dauerhaft werden, ohne daß die Gefahr besteht, daß der auf der Vorratsrolle befindliche Drahtwickel locker wird.The invention is based on the object of developing a method of the type described at the outset in such a way that the connections formed on the contact surfaces are as permanent as possible without there being a risk that the wire coil on the supply roll becomes loose.
Erfindungsgemäß wird diese Aufgabe mit den im Kennzeichen des Patentanspruchs 1 angegebenen Merkmalen gelöst. Wenn beim erfindungsgemäßen Verfahren nach dem Befestigen des Drahts auf der ersten Kontaktfläche die Kontaktierspitze angehoben und über die zweite Kontaktfläche bewegt wird, sorgt das dabei auf die Vorratsrolle wirkende, den Draht abspulende Drehmoment dafür, daß der Draht frei aus der Kontaktierspitze austritt und nicht unter Beanspruchung der gebildeten Kontaktstelle aus der Kontaktierspitze und von der Vorratsrolle gezogen werden muß. Auf den zuerst gebildeten Kontakt und auch auf den danach gebildeten Kontakt wirken daher keinerlei Zugkräfte ein, was zu einer beträchtlichen Verbesserung der Zuverlässigkeit des mittels des erfindungsgemäßen Verfahrens hergestellten Halbleiterbauelements beiträgt.According to the invention, this object is achieved with the features specified in the characterizing part of claim 1. When, in the method according to the invention, after the wire has been attached to the first contact surface, the contact tip is raised and moved over the second contact surface, the torque acting on the supply roll and unwinding the wire ensures that the wire emerges freely from the contact tip and does not have to be pulled out of the contact tip and from the supply roll, putting strain on the contact point formed. No tensile forces therefore act on the contact formed first or on the contact formed afterwards, which contributes to a considerable improvement in the reliability of the semiconductor component produced by the method according to the invention.
Eine vorteilhafte Weiterbildung der Erfindung ist im Patentanspruch 2 gekennzeichnet.An advantageous development of the invention is characterized in patent claim 2.
Die Erfindung wird nun anhand der Zeichnung beispielshalber näher erläutert. Es zeigtThe invention will now be explained in more detail by way of example with reference to the drawing. It shows
Fig. 1 die Draufsicht auf ein typisches Werkstück für eine Vorrichtung zur Durchführung des erfindungsgemäßen Verfahrens; Fig. 1 is a plan view of a typical workpiece for a device for carrying out the method according to the invention;
Fig. 2a bis 2d vereinfachte Seitenansichten des Werkstückes gemäß Fig. 1 zur Erläuterung des erfindungsgemäßen Verfahrens; Fig. 2a to 2d simplified side views of the workpiece according to Fig. 1 to explain the method according to the invention;
Fig. 3 eine Seitenansicht einer Kontaktiervorrichtung zur Durchführung des erfindungsgemäßen Verfahrens, wobei einzelne Teile weggebrochen sind; Fig. 3 is a side view of a contacting device for carrying out the method according to the invention, with individual parts broken away;
Fig. 4 eine vergrößerte Seitenansicht eines Teils der Kontaktiervorrichtung gemäß Fig. 3 einschließlich eines Teils der in dieser Figur weggebrochenen Teile; Fig. 4 is an enlarged side view of a portion of the contacting device according to Fig. 3 including a portion of the parts broken away in this figure;
Fig. 5 eine Draufsicht auf die in Fig. 4 dargestellten Teile der Kontaktiervorrichtung und Fig. 5 is a plan view of the parts of the contacting device shown in Fig. 4 and
Fig. 6 einen Schnitt im wesentlichen längs der Linie 8-8 in Fig. 5. Fig. 6 is a section taken substantially along line 8-8 in Fig. 5.
Fig. 1 zeigt ein Werkstück 10 mit einem Transistorplättchen 12, das auf den abgeflachten Kopf eines Metallstiftes oder Leiters 14 auflegiert ist. Der Leiter 14 und ähnliche Leiter 16 und 18 sind in einer Glasplatte 20 befestigt. Leitungsdrähte 24 a und 24 b reichen von den Basis- und Emitterkontaktflächen zu den Kontaktflächen der Leiter 16 bzw. 18. Die Leitungsdrähte bestehen typischerweise aus Gold und besitzen einen Durchmesser von 0,025 mm. Das zu beschreibende Verfahren dient dem Anbringen von Leitungsdrähten 24 a und 24 b zwischen den Kontaktflächen des Transistors 12 und den Kontaktflächen der Leiter 16 bzw. 18. Das Verfahren kann eingesetzt werden, um beliebige Kontaktflächen beliebiger Halbleiter mit Drähten zu kontaktieren. Fig. 1 shows a workpiece 10 with a transistor die 12 alloyed onto the flattened head of a metal pin or conductor 14. The conductor 14 and similar conductors 16 and 18 are secured in a glass plate 20. Lead wires 24 a and 24 b extend from the base and emitter contact surfaces to the contact surfaces of the conductors 16 and 18 , respectively. The lead wires are typically made of gold and have a diameter of 0.025 mm. The method to be described serves to attach lead wires 24 a and 24 b between the contact surfaces of the transistor 12 and the contact surfaces of the conductors 16 and 18 , respectively. The method can be used to contact any contact surfaces of any semiconductor with wires.
Die Fig. 2a bis 2d zeigen den Ablauf des Verfahrens beim Anbringen des Leitungsdrahtes 24 a am Transistorplättchen 12 und am Leiter 18. Das Transistorplättchen 12 wird zuerst in eine Arbeitsstellung gebracht und anschließend wird die Kontaktiervorrichtung gegenüber einer vorgegebenen Achse 26 auf das Transistorplättchen zentriert, was mittels eines elektrooptischen Servosystems erfolgt. Eine Kontaktierspitze 28 liegt deutlich außerhalb des Sichtfeldes des optischen Systems während der Ausrichtung der Kontaktiervorrichtung. Ihre Lage ist durch die gestrichelte Umrißlinie 28 a angedeutet. Der Draht 24 führt von der als Hohlnadel ausgebildeten Kontaktierspitze 28 zu einer Vorratsrolle 182, die in Fig. 3 nicht dargestellt ist. Der Draht 24 wird durch eine auf die Vorratsrolle 182 wirkende Aufwickelkraft unter Spannung gehalten. Eine Kugel 25, die beim Hindurchführen des Drahtendes durch eine Flamme erzeugt wurde, verhindert, daß der Draht aus der Nadel herausgezogen wird. Fig. 2a to 2d show the procedure when attaching the lead wire 24 a to the transistor chip 12 and the conductor 18 . The transistor chip 12 is first brought into an operating position and then the contacting device is centered on the transistor chip with respect to a predetermined axis 26 , which is done by means of an electro-optical servo system. A contacting tip 28 lies well outside the field of view of the optical system during alignment of the contacting device. Its position is indicated by the dashed outline 28 a . The wire 24 leads from the contacting tip 28 designed as a hollow needle to a supply roll 182 which is not shown in Fig. 3. The wire 24 is kept under tension by a winding force acting on the supply roll 182. A ball 25 which was created when the wire end was passed through a flame prevents the wire from being pulled out of the needle.
Nachdem das elektrooptische System gegenüber dem Transistorplättchen 12 ausgerichtet ist, wird die Kontaktierspitze 28 in eine vorgegebene Position gegenüber der Achse 26 verbracht. Die vorgegebene Position wird so gewählt, daß sich die Nadel über einem geeigneten Bereich der expandierten Kontakte des Transistorplättchens 12 befindet und die Kontaktierspitze wird anschließend abgesenkt, um die Kugel 25 gegen die Kontaktfläche zu pressen, wie dies in ausgezogenen Linien in Fig. 2a gezeigt ist. Sowohl die Kugel 25 als auch die Kontaktfläche werden auf eine Kontaktierungstemperatur erwärmt, so daß der von der Kontaktierspitze 28 auf die Kugel 25 ausgeübte Druck den Draht 24 mit der Kontaktfläche verbindet.After the electro-optic system is aligned with the transistor die 12 , the contacting tip 28 is placed in a predetermined position with respect to the axis 26. The predetermined position is chosen so that the needle is over an appropriate area of the expanded contacts of the transistor die 12 and the contacting tip is then lowered to press the ball 25 against the contact pad as shown in solid lines in Fig. 2a. Both the ball 25 and the contact pad are heated to a contacting temperature so that the pressure exerted by the contacting tip 28 on the ball 25 bonds the wire 24 to the contact pad.
Die Kontaktierspitze 28 wird anschließend gehoben und führt eine solche seitliche Bewegung aus, daß ihre Spitze sich längs der gestrichelten Linie 32 (Fig. 2b) bewegt und dann in einer zweiten gegenüber der Achse 26 festgelegten Stellung abgesenkt wird, die so gewählt ist, daß die Kante des Drahtes 24 gegen die Kontaktfläche des Leiters 18 gepreßt wird. Die Richtung der auf die Vorratsrolle 182 wirkenden Aufwickelkraft wird für die Dauer der Bewegung der Kontaktierspitze langs der Linie 32 umgekehrt, so daß der Draht mittels eines Luftstromes durch die Kontaktierspitze 28 abgespult wird, wodurch Spannungen an dem Draht und der Verbindungsstelle vermieden werden. Auf diese Weise wird es möglich, die Kontaktierspitze mit hoher Geschwindigkeit zu bewegen, ohne die Verbindung oder den Draht zu zerstören. Der Druck der Kontaktierspitze auf den Leiter 18 führt zu einer Heftkontaktierung 33.The contact tip 28 is then raised and performs a lateral movement such that its tip moves along the dashed line 32 ( Fig. 2b) and is then lowered into a second position fixed relative to the axis 26 , which is selected so that the edge of the wire 24 is pressed against the contact surface of the conductor 18. The direction of the winding force acting on the supply roll 182 is reversed for the duration of the movement of the contact tip along the line 32, so that the wire is unwound by means of an air stream through the contact tip 28 , thereby avoiding stress on the wire and the connection point. In this way it is possible to move the contact tip at high speed without destroying the connection or the wire. The pressure of the contact tip on the conductor 18 leads to a staple contact 33.
Als nächstes wird die Kontaktierspitze 28 gehoben, wobei sie ein Drahtstück 24 c austreten läßt, wie dies in Fig. 2c gezeigt ist. Anschließend wird der Draht 24 gegenüber der Kontaktierspitze 28 festgeklemmt. Wenn nun die Kontaktierspitze 28 ihre Aufwärtsbewegung fortsetzt, dann bricht der Draht an der Stelle, an der er durch die Heftkontaktierung 33 geschwächt ist. Die Kontaktierspitze 28 bewegt sich dann längs der Linie 34, so daß das Drahtstück 24 c durch eine Flamme 36 geführt wird, wobei sich eine neue Kugel 27 bildet, wie dies Fig. 2d zeigt. Nach Passieren der Flamme 36 wird der 60 Draht freigegeben, so daß die nunmehr wieder auf die Spule wirkende Aufwickelkraft die Kugel 27 nach oben gegen die Spitze der Kontaktierspitze 28 zieht. Anschließend bewegt sich die Kontaktierspitze weiter in ihre bei 28a in Fig. 2a gezeichnete Ausgangsstellung.Next, the contact tip 28 is raised, allowing a piece of wire 24c to emerge, as shown in Fig. 2c. The wire 24 is then clamped opposite the contact tip 28. If the contact tip 28 now continues its upward movement, the wire breaks at the point where it is weakened by the tack contact 33. The contact tip 28 then moves along the line 34 so that the piece of wire 24c is guided through a flame 36 , forming a new ball 27 , as shown in Fig. 2d. After passing the flame 36 , the wire is released so that the winding force now acting on the coil again draws the ball 27 upwards against the tip of the contact tip 28. The contact tip then moves further into its starting position shown at 28a in Fig. 2a.
Das vorstehend beschriebene und anhand der Fig. 2a bis 2d dargestellte Verfahren besitzt entscheidende Vorteile. Als Ergebnis der Umkehrung der Richtung der auf die Vorratsrolle wirkenden Kraft und der unter Antrieb erfolgenden Ausgabe des Drahtes aus der Kontaktierspitze mittels eines Luftstrahls wird die Spannung an der Verbindung zwischen dem Draht und der Kontaktfläche des Transistorplättchens 12 wesentlich reduziert oder völlig vermieden. Hiermit vermindert sich aber auch die Gefahr von Fehlkontaktierungen, die auf einem Ablösen des Leitungsdrahts von dem Transistorplättchen, auf einem Ablösen der Kugel 25 von der Kontaktfläche und auf einem Ablösen des Drahtes von der Kugel 25 beruhen können. Fast noch wichtiger ist es, daß beim Auftreten eines solchen Fehlers der Draht 24 nicht infolge der auf die Vorratsrolle wirkenden Aufwikkelkraft aus der Kontaktierspitze 28 herausgezogen wird. Statt dessen ist durch die unter Antrieb erfolgende Ausgabe des Drahtes 24 sichergestellt, daß ein Drahtstück aus dem Ende der Kontaktierungsspitze austritt, so daß eine Heftkontaktierung unabhängig davon stattfinden kann, ob eine Kugelkontaktierung erreicht wurde oder nicht. Der Antrieb der Vorratsrolle in Abspulrichtung zur Ausgabe des Drahtes 24 wird solange aufrechterhalten, bis der Draht in dem Verfahrensschritt gemäß Fig. 2c festgeklemmt wird, so daß ein vorzeitiges Abreißen des Drahtes 24 nach der Heftkontaktierung oder ein Fehler bei der Ausführung der Heftkontaktierung nicht zur Folge haben, daß der Draht 24 aus der Kontaktspitze 28 herausgezogen wird. Wenn der Draht 24 erst festgeklemmt ist, dann wird dieser Zustand aufrechterhalten, bis der Draht durch die Flamme 36 hindurchgeführt wurde und bis sich in Vorbereitung des nächsten Arbeitszyklus an seinem Ende eine neue Kugel 27 gebildet hat. Wenn die Kugelkontaktierung oder die Heftkontaktierung nicht erfolgreich durchgeführt wurden, dann trennt die Flamme 36 das überstehende Drahtende ab und die Kontaktiervorrichtung ist somit, selbst wenn ein Fehler bei der Kugelkontaktierung oder bei der Heftkontaktierung aufgetreten ist, für den nächsten Arbeitszyklus vorbereitet. Ein Kontaktierungszyklus kann in etwa einer Sekunde durchgeführt werden, so daß etwa 60 Kontaktierungen pro Minute verwirklicht werden können. Die Bedeutung der Aufrechterhaltung der Funktionsfähigkeit der Kontaktiervorrichtung trotz fehlerhafter Kontaktierschritte liegt auf der Hand, da das Herausgleiten des Drahtes 24 aus der Kontaktierspitze 28 eine Stillegung der Kontaktiervorrichtung erforderlich machen würde, bis der Draht erneut in die Kontaktierspitze eingefädelt ist und mit einer neuen Kugel versehen wäre. Solche Reparaturzeiten hätten aber einen erheblichen Produktionsausfall zur Folge.The method described above and illustrated in Fig. 2a to 2d has decisive advantages. As a result of reversing the direction of the force acting on the supply roll and the driven dispensing of the wire from the contacting tip by means of an air jet, the stress on the connection between the wire and the contact surface of the transistor chip 12 is significantly reduced or completely eliminated. This also reduces the risk of faulty contacts, which can be due to the lead wire becoming detached from the transistor chip, the ball 25 becoming detached from the contact surface and the wire becoming detached from the ball 25. Almost more importantly, if such a fault occurs, the wire 24 is not pulled out of the contacting tip 28 as a result of the winding force acting on the supply roll. Instead, the driven dispensing of the wire 24 ensures that a piece of wire emerges from the end of the contacting tip so that tack contacting can take place regardless of whether ball contacting has been achieved or not. The drive of the supply roll in the unwinding direction for dispensing the wire 24 is maintained until the wire is clamped in the process step according to Fig. 2c so that premature tearing of the wire 24 after tack contacting or an error in carrying out the tack contacting does not result in the wire 24 being pulled out of the contact tip 28. Once the wire 24 is clamped, this condition is maintained until the wire has been passed through the flame 36 and until a new ball 27 has formed at its end in preparation for the next work cycle. If the ball contact or the tack contact were not carried out successfully, the flame 36 cuts off the protruding wire end and the contacting device is thus prepared for the next work cycle, even if an error occurred in the ball contact or the tack contact. A contacting cycle can be carried out in about one second, so that about 60 contacts can be made per minute. The importance of maintaining the functionality of the contacting device despite faulty contacting steps is obvious, since the slipping of the wire 24 from the contacting tip 28 would make it necessary to shut down the contacting device until the wire was re-threaded into the contacting tip and provided with a new ball. Such repair times would result in a considerable loss of production.
Die wesentlichen Teile der Kontaktiervorrichtung zur Durchführung des anhand der Fig. 2a bis 2d erläuterten Verfahrens sind in Fig. 3 dargestellt. Ein wesentliches Bauelement der Kontaktiervorrichtung bildet ein U-schienenförmiger Rahmen 52. Innerhalb des Rahmens 52 ist ein erstes Trägerelement 54 (Fig. 3) auf Schrägrollenlagern reibungsarm gelagert und in einer Richtung beweglich, die nachstehend als X-Koordinate bezeichnet werden soll. Das Trägerelement 54 wird in Richtung der X-Koordinate mittels einer nicht dargestellten Spindel angetrieben, die ihrerseits von einem X-Schrittschaltmotor angetrieben wird. Ein zweites Trägerelement 62 ist mit dem ersten Trägerelement 54 über reibungsarme Schrägrollenlager zur Bewegung in einer Richtung verbunden, die nachstehend als Y-Koordinate bezeichnet werden soll. Das zweite Trägerelement 62 wird mittels einer zweiten Spindel, die nicht dargestellt ist, angetrieben, die ihrerseits über einen zweiten bzw. über einen Y-Schrittschaltmotor angetrieben wird, welcher an dem ersten Trägerelement 54 befestigt ist.The essential parts of the contacting device for carrying out the method explained with reference to Fig. 2a to 2d are shown in Fig. 3. A key component of the contacting device is a U-rail-shaped frame 52. Within the frame 52 , a first carrier element 54 ( Fig. 3) is mounted on tapered roller bearings with low friction and is movable in a direction which will be referred to below as the X coordinate. The carrier element 54 is driven in the direction of the X coordinate by means of a spindle (not shown), which in turn is driven by an X stepper motor. A second carrier element 62 is connected to the first carrier element 54 via low-friction tapered roller bearings for movement in a direction which will be referred to below as the Y coordinate. The second carrier element 62 is driven by means of a second spindle (not shown), which in turn is driven by a second or Y stepper motor which is attached to the first carrier element 54 .
Das zweite Trägerelement 62 kann somit in der XY- Ebene in jede Position gegenüber dem Rahmen 52 gebracht werden und bildet mithin eine Vorrichtung, die üblicherweise als Kreuztisch bezeichnet wird.The second support element 62 can thus be brought into any position relative to the frame 52 in the XY plane and thus forms a device which is usually referred to as a cross table.
Ein elektrooptisches System 74 dient der Positionierung der Kontaktierspitze 28 bezüglich der Kontaktflächen.An electro-optical system 74 serves to position the contact tip 28 with respect to the contact surfaces.
Das Werkstück 10 wird von einer Spannvorrichtung 40 getragen, die auf einer Schaltkette angebracht ist, welche das Werkstück in Bearbeitungsstellung bringt, so daß die Halbleitervorrichtung innerhalb des Gesichtsfeldes des optischen Systems 74 liegt. Das zweite Trägerelement 62 trägt eine Kontaktiereinheit, die mit dem Bezugszeichen 80 bezeichnet ist.The workpiece 10 is supported by a clamping device 40 which is mounted on a switching chain which brings the workpiece into machining position so that the semiconductor device lies within the field of view of the optical system 74. The second carrier element 62 carries a contacting unit which is designated by the reference numeral 80 .
Eine Drahtzuführungseinrichtung, die insgesamt mit dem Bezugszeichen 180 bezeichnet ist, ist auf dem Lförmigen Element 1 16 befestigt, wie in Fig. 5 dargestellt ist. Die Vorrichtung enthält eine austauschbare Vorratsrolle 182 für den Draht 24, die auf eine Trägerrolle 184, 184 a befestigt ist. Die Trägerrolle 184, 184 a ist auf einem Rohr 186 gelagert und dort durch eine ringförmige Schulter einer aufgeschraubten Kappe 188 gesichert. In das Innere des Rohres 186 wird Druckluft über einen Kanal 192 innerhalb des Arms 194, der das Rohr 186 trägt, eingeführt. Der Arm 194 ist an dem L-förmigen Element 116 befestigt, so daß er sich gemeinsam mit der Kontaktiereinheit bewegt. Wie man am besten in Fig. 6 sieht, führt eine Anzahl von Öffnungen 200 von der Innenbohrung 190 des Rohres 186 zu dem ringförmigen Raum zwischen dem Rohr 186 und der Trägerrolle 184. Durch diese Öffnungen 200 wird eine Luftmenge zugeführt, die ausreicht, um die Trägerrolle 184 ständig auf einer Luftschicht zu lagern, so daß eine sehr reibungsarme Lagerung erreicht wird. Zusätzlich bemerkt man, daß die Öffnungen 200 nicht genau radial verlaufen, sondern leicht versetzt, so daß die Luft längs des Umfangs des Zwischenraumes zwischen dem Rohr 86 und der Trägerrolle zirkuliert, wodurch eine Aufwickelkraft auf die Trägerrolle 184 ausgeübt wird, d.h. eine Kraft, die eine Drehung der Trägerrolle in einer solchen Richtung zur Folge hat, daß der Draht wieder auf die Vorratsrolle 182 aufgewickelt wird. Eine Düse 202 empfängt periodisch Druckluftstöße aus einem biegsamen Schlauch 204 und richtet einen Luftstrom gegen die Oberfläche 184 a der Trägerrolle. Dieser Luftstrom ist ausreichend groß, um die Aufwickelkraft, die durch die Luft erzeugt wird, welche aus den Öffnungen 200 ausströmt, zu überwinden und eine resultierende Abspulkraft zu erzeugen. Die Luft für die Düse 202 zur Umkehr der Drehrichtung der Trägerrolle 184, 184 a wird durch ein Magnetventil (nicht dargestellt) gesteuert.A wire feed device, designated as a whole by the reference numeral 180 , is mounted on the L-shaped element 116 , as shown in Fig. 5. The device includes a replaceable supply roll 182 for the wire 24 , which is mounted on a carrier roll 184 , 184a . The carrier roll 184 , 184a is mounted on a tube 186 and secured there by an annular shoulder of a screwed-on cap 188. Compressed air is introduced into the interior of the tube 186 via a channel 192 within the arm 194 which carries the tube 186. The arm 194 is attached to the L-shaped element 116 so that it moves together with the contacting unit. As best seen in Fig. 6, a number of openings 200 lead from the inner bore 190 of the tube 186 to the annular space between the tube 186 and the carrier roll 184. Through these openings 200 a quantity of air is supplied which is sufficient to support the carrier roll 184 constantly on a layer of air, so that a very low friction bearing is achieved. In addition, it will be noted that the openings 200 are not exactly radial, but slightly offset so that the air circulates along the circumference of the space between the tube 86 and the carrier roll, thereby exerting a winding force on the carrier roll 184 , that is, a force which causes the carrier roll to rotate in such a direction that the wire is rewound onto the supply roll 182 . A nozzle 202 periodically receives blasts of compressed air from a flexible hose 204 and directs a stream of air against the surface 184a of the carrier roll. This stream of air is sufficiently large to overcome the winding force created by the air exiting the openings 200 and to produce a resultant unwinding force. The air to the nozzle 202 for reversing the direction of rotation of the carrier roll 184 , 184a is controlled by a solenoid valve (not shown).
Normalerweise dreht sich die Vorratsrolle mit relativ geringer Geschwindigkeit. Wenn jedoch der Draht aus irgendeinem Grunde reißt, dann hat die aus den Öffnungen 200 austretende Luft eine schnell zunehmende Drehgeschwindigkeit der Trägerrolle 184, 184 a zur Folge, und zwar in der Richtung, in der der Draht aufgewikkelt würde. Alternierend aufeinanderfolgende dunkle und helle Segmente205 und 206 auf der Stirnfläche der Trägerrolle erlauben eine Feststellung dieses schwerwiegenden Fehlers, so daß der Betrieb unterbrochen werden kann. Getrennte Glasfaserstränge 208 und 210 werden zusammengefaßt und auf den Teil der Stirnfläche ausgerichtet, der mit hellen und dunklen Bereichen 205 bzw. 206 versehen ist. Dabei wird das Licht über den Glasfaserstrang 208 zu der Stirnfläche geführt und das reflektierte Licht wird über den Glasfaserstrang 210 zu einem Fotodetektor zurückgeführt. Mit Hilfe des Fotodetektors wird die Pulsfrequenz und die lntensität des von den hellen und dunklen Segmenten reflektierten Lichts elektronisch ermittelt. Sobald die Frequenz einen vorgegebenen Wert überschreitet, wird ein Signal erzeugt, das einen Drahtbruch anzeigt.Normally the supply roll rotates at a relatively low speed. However, if the wire breaks for any reason, the air escaping from the openings 200 causes the carrier roll 184 , 184a to rapidly increase in speed in the direction in which the wire would be wound. Alternating dark and light segments 205 and 206 on the face of the carrier roll allow this serious defect to be detected so that operation can be stopped. Separate fiber optic strands 208 and 210 are combined and aimed at the part of the face provided with light and dark areas 205 and 206 , respectively. The light is guided to the face via the fiber optic strand 208 and the reflected light is returned to a photodetector via the fiber optic strand 210. The photodetector electronically determines the pulse frequency and the intensity of the light reflected from the light and dark segments. As soon as the frequency exceeds a specified value, a signal is generated that indicates a wire break.
Claims (4)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83748569A | 1969-06-30 | 1969-06-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2032302A1 DE2032302A1 (en) | 1971-02-25 |
DE2032302C2 true DE2032302C2 (en) | 1987-01-29 |
Family
ID=25274582
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19702066210 Pending DE2066210A1 (en) | 1969-06-30 | 1970-06-30 | |
DE2032302A Expired DE2032302C2 (en) | 1969-06-30 | 1970-06-30 | Method for operating a bonding device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19702066210 Pending DE2066210A1 (en) | 1969-06-30 | 1970-06-30 |
Country Status (7)
Country | Link |
---|---|
US (1) | US3641660A (en) |
JP (1) | JPS565062B1 (en) |
KR (1) | KR780000596B1 (en) |
DE (2) | DE2066210A1 (en) |
FR (1) | FR2048054B1 (en) |
GB (1) | GB1323331A (en) |
NL (1) | NL172806C (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19617470B4 (en) * | 1995-11-07 | 2006-02-02 | Hesse & Knipps Gmbh | thread feed |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5080763A (en) * | 1973-11-14 | 1975-07-01 | ||
GB1592368A (en) * | 1976-10-18 | 1981-07-08 | Texas Instruments Inc | Automated manipulative operation system |
US4340166A (en) * | 1978-11-22 | 1982-07-20 | Kulicke & Soffa Industries, Inc. | High speed wire bonding method |
US4327860A (en) * | 1980-01-03 | 1982-05-04 | Kulicke And Soffa Ind. Inc. | Method of making slack free wire interconnections |
US4387283A (en) * | 1981-08-03 | 1983-06-07 | Texas Instruments Incorporated | Apparatus and method of forming aluminum balls for ball bonding |
US5054192A (en) * | 1987-05-21 | 1991-10-08 | Cray Computer Corporation | Lead bonding of chips to circuit boards and circuit boards to circuit boards |
US5195237A (en) * | 1987-05-21 | 1993-03-23 | Cray Computer Corporation | Flying leads for integrated circuits |
US5184400A (en) * | 1987-05-21 | 1993-02-09 | Cray Computer Corporation | Method for manufacturing a twisted wire jumper electrical interconnector |
US5112232A (en) * | 1987-05-21 | 1992-05-12 | Cray Computer Corporation | Twisted wire jumper electrical interconnector |
US5201454A (en) * | 1991-09-30 | 1993-04-13 | Texas Instruments Incorporated | Process for enhanced intermetallic growth in IC interconnections |
US5244140A (en) * | 1991-09-30 | 1993-09-14 | Texas Instruments Incorporated | Ultrasonic bonding process beyond 125 khz |
US5813590A (en) * | 1995-12-18 | 1998-09-29 | Micron Technology, Inc. | Extended travel wire bonding machine |
DE19831550B4 (en) * | 1998-07-14 | 2013-08-14 | Robert Bosch Gmbh | bonding process |
US6520026B1 (en) * | 1999-11-03 | 2003-02-18 | International Business Machines Corporation | Method for making and testing thermocompression bonds |
US6651866B2 (en) | 2001-10-17 | 2003-11-25 | Lilogix, Inc. | Precision bond head for mounting semiconductor chips |
US20050051600A1 (en) * | 2003-09-10 | 2005-03-10 | Texas Instruments Incorporated | Method and system for stud bumping |
DE102004056702B3 (en) * | 2004-04-22 | 2006-03-02 | Semikron Elektronik Gmbh & Co. Kg | Method for mounting electronic components on a substrate |
US8008183B2 (en) * | 2007-10-04 | 2011-08-30 | Texas Instruments Incorporated | Dual capillary IC wirebonding |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE559732A (en) * | 1956-10-31 | 1900-01-01 | ||
US3006068A (en) * | 1957-03-22 | 1961-10-31 | Bell Telephone Labor Inc | Twist-compression bonding of metallic and metallized surfaces |
US3087239A (en) * | 1959-06-19 | 1963-04-30 | Western Electric Co | Methods of bonding leads to semiconductive devices |
US3029348A (en) * | 1959-10-02 | 1962-04-10 | Western Electric Co | Electro-optical servo system for coarse and fine positioning of transistors |
NL269297A (en) * | 1960-10-06 | 1900-01-01 | ||
US3207904A (en) * | 1962-04-09 | 1965-09-21 | Western Electric Co | Electro-optical article positioning system |
US3235945A (en) * | 1962-10-09 | 1966-02-22 | Philco Corp | Connection of semiconductor elements to thin film circuits using foil ribbon |
US3250452A (en) * | 1963-01-29 | 1966-05-10 | Kulicke And Soffa Mfg Company | Nail head bonding apparatus for thermocompressively securing lead wire to semi-conductor devices |
US3357090A (en) * | 1963-05-23 | 1967-12-12 | Transitron Electronic Corp | Vibratory welding tip and method of welding |
DE1439262B2 (en) * | 1963-07-23 | 1972-03-30 | Siemens AG, 1000 Berlin u. 8000 München | METHOD OF CONTACTING SEMICONDUCTOR COMPONENTS BY THERMOCOMPRESSION |
US3313464A (en) * | 1963-11-07 | 1967-04-11 | Western Electric Co | Thermocompression bonding apparatus |
US3286340A (en) | 1964-02-28 | 1966-11-22 | Philco Corp | Fabrication of semiconductor units |
US3358897A (en) * | 1964-03-31 | 1967-12-19 | Tempress Res Co | Electric lead wire bonding tools |
US3363818A (en) * | 1965-03-04 | 1968-01-16 | Basic Products Corp | Spool mount for wire feed device |
US3319859A (en) * | 1965-03-04 | 1967-05-16 | Basic Products Corp | Capillary wire feed device |
US3397451A (en) * | 1966-04-06 | 1968-08-20 | Western Electric Co | Sequential wire and articlebonding methods |
US3472443A (en) * | 1966-04-12 | 1969-10-14 | Fansteel Inc | Weld tip guide and apparatus |
US3430835A (en) * | 1966-06-07 | 1969-03-04 | Westinghouse Electric Corp | Wire bonding apparatus for microelectronic components |
US3442432A (en) | 1967-06-15 | 1969-05-06 | Western Electric Co | Bonding a beam-leaded device to a substrate |
-
1969
- 1969-06-30 US US3641660D patent/US3641660A/en not_active Expired - Lifetime
-
1970
- 1970-06-10 GB GB2812470A patent/GB1323331A/en not_active Expired
- 1970-06-29 FR FR7023954A patent/FR2048054B1/fr not_active Expired
- 1970-06-30 DE DE19702066210 patent/DE2066210A1/de active Pending
- 1970-06-30 NL NL7009641A patent/NL172806C/en not_active IP Right Cessation
- 1970-06-30 JP JP5720370A patent/JPS565062B1/ja active Pending
- 1970-06-30 DE DE2032302A patent/DE2032302C2/en not_active Expired
- 1970-06-30 KR KR700000902A patent/KR780000596B1/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19617470B4 (en) * | 1995-11-07 | 2006-02-02 | Hesse & Knipps Gmbh | thread feed |
Also Published As
Publication number | Publication date |
---|---|
FR2048054B1 (en) | 1975-09-26 |
DE2066210A1 (en) | 1986-03-20 |
KR780000596B1 (en) | 1978-11-23 |
US3641660A (en) | 1972-02-15 |
GB1323331A (en) | 1973-07-11 |
JPS565062B1 (en) | 1981-02-03 |
NL172806C (en) | 1983-10-17 |
DE2032302A1 (en) | 1971-02-25 |
NL7009641A (en) | 1971-01-04 |
FR2048054A1 (en) | 1971-03-19 |
NL172806B (en) | 1983-05-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE2032302C2 (en) | Method for operating a bonding device | |
EP0299987B1 (en) | Ball bonding process and device | |
DE3606604C2 (en) | ||
DE3021659A1 (en) | METHOD FOR MEASURING AND CONTROLLING THE FEED SPEED OF WELDING MACHINES | |
DE3037505C2 (en) | ||
DE3810929C2 (en) | ||
DE2238610A1 (en) | METHOD AND DEVICE FOR INITIATING THE REPINNING PROCESS IN OPEN-END SPINNING DEVICES | |
DE3413894A1 (en) | METHOD FOR MAKING A YARN | |
DE2528806C2 (en) | Welding device | |
DE3336202A1 (en) | Process and apparatus for the connection of yarn-like materials | |
DE69301694T2 (en) | Process and equipment for the automatic transfer of the fed wire in a spark erosion machine | |
DE3030155A1 (en) | DEVICE FOR MANUFACTURING A HOLLOW EXTRUSION TOOL KIT | |
DE2203194B2 (en) | Method and device for controlling a gas cutting process | |
DE3739955A1 (en) | DEVICE FOR ULTRASONIC WIRE CONTACT | |
DE4140603A1 (en) | Soldering or welding device with automatic additive feed - has heating controller for regulating additive wire melting rate | |
EP0298025A1 (en) | Weft bobbin changer for a loom | |
DE10239334B4 (en) | Filament winding machine with a voltage detector | |
DE3235789A1 (en) | SWIVELING COIL HOLDER | |
DE3422933C2 (en) | ||
DE4326478C2 (en) | Bonding head for ultrasonic bonding | |
EP0162371A1 (en) | Foil feeder for a tube production machine | |
EP0563905B1 (en) | Device for changing a reel, particularly a take-up reel on a cable-making machine | |
EP1175274B1 (en) | Wire erosion device | |
EP0314073B1 (en) | Erosion machine with a device for compensating the wear of an electrode and method | |
DE68907899T2 (en) | AUTOMATIC WIRE CONNECTION PROCEDURE. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8139 | Disposal/non-payment of the annual fee | ||
8128 | New person/name/address of the agent |
Representative=s name: PRINZ, E., DIPL.-ING. LEISER, G., DIPL.-ING. SCHWE |
|
8172 | Supplementary division/partition in: |
Ref country code: DE Ref document number: 2066210 Format of ref document f/p: P |
|
Q171 | Divided out to: |
Ref country code: DE Ref document number: 2066210 |
|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition |