DE202012012080U1 - Energy supply gate control stage - Google Patents

Abstract

Arrangement (2), comprising a semiconductor actuator (1) for setting a current flow, a gate control stage (2) of the semiconductor actuator and a power supply means (3) for the gate control stage, which has an input and an output side, characterized in that the input side of the energy supply means (3) is connected in series to the output side of the semiconductor control element (1) and the energy supply means (3) is set up to generate energy from this current even if the current flow remains constant over time and, in particular, no change in the control of the semiconductor control element (1) over time is required .

Description

Actuators should set an electrical current (metering, switching, limit, ...), this as quickly as possible, with the least possible loss and they themselves should be as durable as possible, as easy to handle and as reliable as possible.

State of the art:

In the electromechanical field, bistable relays and motor operated potentiometers are among the lowest-loss solutions, but they are not wear-resistant, not as fast as semiconductors, and i. a. not very good for high voltage.

Among the semiconductors, diodes are among the most easily manageable actuators, because they manage without any control and independently determine their switching state on the basis of the applied voltage. They are here understood, so to speak, as an actuator without control input (for example, you can set with their help with AC a heating power to about 50%, but do not change this setting). However, conventional diodes are no longer considered particularly low-loss, because Mosfet based, so-called synchronous rectifier circuits provide more efficiency.

Mosfets (and IGBTs) need i. a. to power their gate control stages additional lines, what z. Z. causes that they prevail only in new devices as diode replacement.

Also in use as controllable semiconductor actuators require modern transistors, - IGBTs and MOSFETs - depending on the performance of a certain amount of control energy. Although these devices can emit the so-called 'photovoltaic coupler' (optocoupler with Mosfet output) with their transmission LED, this concept seems to be limited to comparatively slow low-power applications.

Although solutions based on Optotriacs - so-called solid-state relays - do not require additional lines for their control energy, they are i. a. limited to alternating current and mains frequency, similarly lossy as diodes and cause with constant control by their phase control strong current harmonics.

This applies i. a. also for most thyristor based applications, such as B. power converter.

Shut-off thyristors (GTO thyristors) briefly require a larger negative gate current for switching off (about 10-30% of the anode current), which results in a positive power at negative gate-cathode voltage. Thus, a certain amount of energy is needed, which can advantageously already be collected during the switch-on time and stored up to an arbitrary switch-off time. Furthermore, their blocking behavior at high voltages can be improved by a small negative gate voltage and a small negative gate current.

Devices for discharging high-voltage capacitors should work reliably under all conceivable external fault conditions, as a result of which concepts which manage without external auxiliary energy are advantageous.

• G1: Für einen dauerhaft sicher ausgeschalteten Zustand benötigen sie keine, oder nur eine geringe Steuerleistung (hauptsächlich nur Thyristoren in der Nähe ihrer maximalen Sperrspannung).
• G2: Für einen dauerhaft sicher eingeschalteten Zustand benötigen sie eine ggf. kleine, aber von Null verschiedene Steuerleistung (Thyristoren: Backporch-Gatedauereinschaltstrom gegen unerwünschtes teilweises Verlöschen bei kleinen Anodenströmen, Mosfets und IGBTs: Leckstromausgleich).
• G3: Zum Einschalten und oft auch zum Ausschalten benötigen sie eine größere Steuerenergie, wodurch die erforderliche Steuerleistung mit der Betriebsfrequenz steigt.
• (G1) werden oft schon einfachste bekannte Mittel, wie z. B. Gate-Ableit-Widerstände gerecht, oder auf die Sperrverbesserung wird einfach verzichtet.
• (G2) wird häufig durch externe Hilfsenergie-Einspeisung gelöst.

The addressed semiconductor actuators have similarities with regard to their control energy requirement:

• G1: For a permanently safe off state, they need no, or only low, control power (mainly only thyristors near their maximum reverse voltage).
• G2: For a permanently safe switched-on state they need a small, but non-zero control power (thyristors: Backporch gate current inrush current against unwanted partial extinction in the case of small anode currents, Mosfets and IGBTs: leakage current compensation).
• G3: To turn on and often turn off, they require more control power, increasing the required control power with the operating frequency.
• (G1) are often already the simplest known means, such. B. gate leakage resistors justice, or the barrier improvement is simply waived.
• (G2) is often solved by external auxiliary power supply.

DE000010045093A1 draws the energy parallel to the semiconductor actuator with a limited by resistance 'minimum current'. It mentions that the series connection of several semiconductor actuators for high-voltage applications requires balancing resistors arranged in parallel with the switching elements, and that this necessary balancing current can be used for the control energy generation of the gate control stages. Furthermore, a capacitively coupled path for the control energy generation is disclosed here, whereby the power loss of so-called snubber elements (RC protection circuit of the semiconductor actuators) is used, which takes into account (G3).

In general, the extraction of energy from the output side of the semiconductor actuators for control energy production makes much sense, because this is associated with short paths (important in high voltage applications) and makes the actuators energetically self-sufficient.

In the IPC subgroup H02M 1/096 many such devices are described with parallel energy extraction. A principle which in 1 outlined.

DE102008049677A1 describes different methods of energy extraction from the induction voltages of series inductors. In order for induction voltages to occur at all, these methods cause temporal changes in current, which are not always the case, and whose generation by means of the semiconductor actuator usually represents a really undesirable disturbance and is disproportionately costly only for this purpose.

Task:

It is an object of the invention to provide a suitable, efficient, inexpensive and easy-to-handle method of generating control energy for gate control stages of semiconductor actuators and possibly their immediate surroundings, which are well suited to the respective requirements, and for as many frequencies as possible, especially including 0-Hertz steady states especially without additional line connections.

The demand for independent energy supply without additional lines arises in numerous applications, because it promotes extremely easy-to-handle concepts. Not only diode replacement, estimator set, thyristor replacement, controllable rectifier, yes, strictly speaking, power converters of all kinds can be improved, in particular in the low voltage range, a sometimes significant reduction in losses should be achieved. The same applies to condenserless IGCTs in high-voltage cascades, isolated applications, eg. As for the discharge of high-voltage capacitor batteries of capacitor discharge welding systems, battery cell discharge monitor, fuses and current limiter, in comparison with conventional solutions in the points safety, precision, speed and manageability.

Solution:

Due to the requirement to manage without additional line connections, solutions that reduce the energy z. B. from the supply voltage of a semiconductor actuator ( 1 ) surrounding overall circuit. This leaves the parallel and serial energy extraction.

The invention solves the problem essentially by a power supply means ( 3 ) leading to the semiconductor actuator ( 1 ) is connected in series. 2 shows these two components together with the gate control stage ( 2 ) in a cell (Z).

In particular, the predominantly serial energy extraction over the parallel at static control states and low frequencies in the advantage.

The parallel removal has namely for energy removal during a permanent on-state only the low residual voltage of the semiconductor actuator available, but on the other hand must tolerate the possibly high reverse voltage during the off state. It has to generate the energy demand that is greater in the on-state from the voltage that is just then lower, and to use as little power as possible in the off-state. The semiconductors used therefore require both high withstand voltage and low starting resistances.

On the other hand, serially extracted energy supply means, the input side of which according to claim 1 is connected in series with the output side of the semiconductor actuator, are not involved in this dilemma. You only need a low internal resistance. You should be able to increase very low voltages (less than 1 V) to the level required for operating the gate control stage (s) (eg 10 V).

In addition, the requirement of very small internal resistance usually only exists during high current flow. Threatening excessive power losses may be caused by input voltage limiting devices ( 3 : 3B ), As mentioned in claim 2, are met.

Indicates the energy supply ( 3 ) to a self-starting resonant converter according to claim 2, in particular the handling is easy. It should be mentioned that, in the case of a sufficient energy supply position, controllable voltage limiting means ( 3B ) within the energy supply ( 3 ) can be used, for which, if necessary, even the, or the input side transistor (s) of the resonant converter itself can be used.

Example diode replacement:

In the application of the diode replacement, this results in the outward appearing in only two pole appearing circuits. You can z. B. be implemented as a module or rectifier plates and replace existing diode solutions without further changes in the environment. Above all, they work continuously in all operating states and even with pure DC voltage as conventional, - only better - diodes. Also in the circuit design are to schedule available diodes easier as a single component, as concepts with other connections u./o. Operating conditions.

In 3 an arrangement for the application of the diode replacement is shown. In this case, the resulting overall circuit should only conduct in the direction as dictated by the parasitic body diodes of the MOSFET semiconductor actuators, but then as well as possible. At very low voltage in the direction of flow of the body diodes, with voltage in the blocking direction of the body diodes and with insufficient supply voltage of the gate control stage ( 2 ) all semiconductor actuators ( 1 . 4 ) switched off. When there is sufficient voltage in the direction of flow of the body diodes, a current flow begins from which of the first semiconductor actuator ( 1 ) generates the energy supply means ( 3 ) the operating energy of the gate control stages ( 2 . 5 ) and these can turn on, which reduces the previously determined by the body diodes flow voltage.

Does the first semiconductor actuator ( 1 ) according to claim 7, a parallel switched start-up improving agent ( 1A ), which z. B. may be a Schottky diode, this process takes place even at lower voltages.

With an energy storage ( 3E ) in particular periodically occurring supply gaps can be bridged.

Are, as claimed in claim 5 and claim 6, further semiconductor actuators ( 4 ) in parallel, so the losses can be reduced even further and the performance of the overall circuit can be increased.

These semiconductor actuators, which are additionally connected in parallel, reduce the through-circuit voltage of the overall circuit and thus also make it difficult to obtain enough energy to operate the gate control stage (s) from the remaining voltage. This problem occurs especially at low currents, in which the increase in efficiency by additional parallel conductive semiconductor actuators ( 4 ) but mostly not urgent.

• • Eine hohe Ansteuerung der Ergänzungshalbleiterstellglieder (4) führt zu geringen Durchflussspannungen.
• • Die dann ggf. zu geringen Durchflussspannungen könnten einen kontinuierlichen Betrieb des Energieversorgungsmittels (3) vereiteln.
• • Das Energieversorgungsmittel (3) kann ggf. mit weniger Eingangsspannung auskommen, wenn die Ergänzungshalbleiterstellglieder (4) mit weniger Intensität angesteuert werden.
• • Das Energieversorgungsmittel (3) kann ggf. mit weniger Eingangsspannung auskommen, wenn eine Anzahl Ergänzungshalbleiterstellglieder (4) von der Ansteuerung ganz ausgenommen wird.

With a rule or logic level ( 2R ) according to claim 6, in this 'border area' the drive signal of the supplementary semiconductor actuators ( 4 ) depending on the energy supply situation of the gate control stages ( 2 ; 5 ; ...) modulates, whereby more or less simple or intelligent control strategies can be used, eg. B. to hit the optimum for the total energy balance. The following aspects can be weighed against each other:

• • high activation of supplementary semiconductor actuators ( 4 ) leads to low flow tensions.
• • The then too low flow voltages could cause a continuous operation of the energy supply ( 3 thwart).
• • The energy supply means ( 3 ) may possibly manage with less input voltage if the supplementary semiconductor actuators ( 4 ) are driven with less intensity.
• • The energy supply means ( 3 ) may possibly operate with less input voltage when a number of supplementary semiconductor actuators ( 4 ) is completely excluded from the control.

A good result is z. Achieved when the supplementary semiconductor actuators ( 4 ) are made so strong that for a sufficient supply of the most important control stages just enough flow-through voltage remains.

According to claim 5, by one or more energy decoupling means ( 2E ) the other gate control stages ( 5 ) of supplementary semiconductor actuators ( 4 ) from the power supply of the first gate control stage ( 2 ) decoupled, z. B. to concentrate on the available energy, if necessary, to the first gate control stage. The energy decoupling means ( 2E ) may optionally have a constant adjustability.

Both with the energy decoupling agent ( 2E ) according to claim 5, as well as with the control or logic stage ( 2R ) according to claim 6, the risk of a discontinuous operation of the energy supply means ( 3 ).

4 : Modern power actuators (MOSFETs and IGBTs) require relatively much drive energy, especially for fast switching. Using an additional capacitive coupled energy supply ( 6 ) according to claim 7, in particular the frequency-dependent increasing energy demand can be met appropriately. Ideally, the possibly required for the semiconductor actuator (not shown here) snubber capacitor can be made smaller, or omitted altogether, so that the otherwise lost 'Snubberenergie' is used at least partially meaningful.

For example, devices for diode replacement can be quite easy to handle and universally applicable bipolar, especially if the design for higher frequencies only such simple means required and hardly any loss of other properties are to be accepted. For this purpose, a capacitively coupled, supplementary energy supply means ( 6 ) be very helpful according to claim 7.

5 : In many cases, -. B. when the semiconductor actuators are operated forward - in which a sufficient power supply via the series energy extraction and possibly on the additional capacitive coupled energy extraction is ensured, but still for the first power on or after a long break a minimum starting energy is needed. This can with a parallel to the semiconductor actuator ( 1 ) connected, minimum current supplying resistance ( 7R ) are provided according to claim 7.

6 shows the combination of serial and parallel energy generation, each with a separate power supply ( 3 . 3P ). Thus, even with greater energy requirements in all static positions of the semiconductor actuator ( 1 ) sufficient control energy can be obtained. As for the serial power supply ( 3 ), is also for the parallel arranged energy supply means ( 3P ) an input-side voltage limit appropriate. With high-voltage cascades, even a possibly lower and at the same time beneficial balancing current can be achieved with it than conventional balancing resistors require in a worst-case design. Also, the parallel arranged energy supply means ( 3P ) have on the input side a series circuit of several, possibly less voltage-resistant stages.

Example IGCT cascode:

7 shows a development of the series circuit of semiconductor actuator ( 1 ), which is a gate commutated thyristor GTO (Gate Turn-Off Thyristor) here, with a power supply ( 3 ), which is a 'controllable voltage limiting means' ( 3B ) is arranged at the input, and is arranged according to claim 3 to interrupt the current path (not shown figuratively: including the energy extraction) on command. Thus, the series circuit is a cascode in which the thyristor can be switched off on the cathode side.

• 1. Der GTO sperrt: Die Gatesteuerstufe (2) steuert das Gate des GTO-Thyristors auf Low-Potential. Das Energieversorgungsmittel (3) ist weitgehend stromfrei und erzeugt daher keine Steuerenergie. Zweckmäßiger weise geht es aber in einen Spannungsbegrenzungsmodus von z. B. 2 V (verhält sich wie eine 2 V-Z-Diode). Der Dunkelstrom (Leckstrom des Thyristors, z. B. durch kosmische Strahlung) bewirkt, dass sich diese 2 V-Spannung ggf. tatsächlich einstellt, was gleichbedeutend ist mit einer Gate-Kathodenspannung von –2 V, die wiederum bei einigen GTOs als Randbedingung für den Betrieb mit hohen Sperrspannungen genannt ist.
• 2. Der GTO wird gezündet: Das Spannungsbegrenzungsmittel (3B) wird voll leitend gesteuert und kurz danach wird der GTO-Thyristor von der Gatesteuerstufe (2) gezündet, wie ein 'normaler' Thyristor in einer konventionellen Umgebung. Hierfür muss die erforderliche Startenergie über eine der vorgenannten ergänzenden Methoden zur Verfügung gestellt worden sein.
• 3. Der GTO leitet: Die Gatesteuerstufe (2) fährt den Zündimpuls bis auf einen kleineren Dauerwert zurück und das Energieversorgungsmittel (3) stellt die an ihm abfallende Spannung auf den kleinst möglichen Wert ein und erzeugt dabei fortlaufend die notwendige Steuerenergie.
• 4. Der GTO wird gelöscht: Das Energieversorgungsmittel (3) unterbricht den Stromfluss. Die hierfür besonders stark ausgelegte Gatesteuerstufe (2B) hält das Potential des Gates weiter Low. Der Anodenstrom des Thyristors fließt fortan nicht mehr aus der Kathode wieder hinaus, sondern kommutiert auf das Gate. Der negative Gatestrom löscht den Thyristor. Der GTO-Thyristor muss hierfür die volle Höhe des Anodenstromes am Gate verkraften können, also ein sog. 'GCT' (Gate Commutated Thyristor) sein. Die Kommutierung soll dem Thyristor zuliebe möglichst schnell erfolgen.

This arrangement, - z. B. cascaded for HVDC applications - can be in the following operating states:

• 1. The GTO locks: the gate control stage ( 2 ) controls the gate of the GTO thyristor to low potential. The energy supply means ( 3 ) is largely power-free and therefore does not generate control energy. Appropriately, however, it goes into a voltage limiting mode of z. B. 2 V (behaves like a 2 VZ diode). The dark current (leakage current of the thyristor, eg due to cosmic radiation) causes this 2 V voltage to actually set, which is equivalent to a gate-cathode voltage of -2 V, which in turn is used as a boundary condition for some GTOs is called the operation with high reverse voltages.
• 2. The GTO is ignited: the voltage limiting device ( 3B ) is fully turned on and shortly thereafter the GTO thyristor is controlled by the gate control stage ( 2 ) ignited, like a 'normal' thyristor in a conventional environment. For this, the required starting energy must have been made available via one of the aforementioned supplementary methods.
• 3. The GTO leads: the gate control stage ( 2 ) retracts the ignition pulse to a smaller duration value and the power supply means ( 3 ) sets the voltage dropping across it to the smallest possible value, thereby continuously generating the necessary control energy.
• 4. The GTO is deleted: the power supply ( 3 ) interrupts the flow of electricity. The purpose of this particularly strong gate control stage ( 2 B ) keeps the potential of the gate low. The anode current of the thyristor no longer flows out of the cathode, but commutes to the gate. The negative gate current extinguishes the thyristor. For this purpose, the GTO thyristor must be able to cope with the full height of the anode current at the gate, that is to say be a so-called 'GCT' (Gate Commutated Thyristor). The commutation should be done as fast as possible for the thyristor.

• 1. Die sonst für den in der Löschphase negativen Gatestrom erforderliche Energie muss nicht auf Hochspannungspotenzial gewonnen (oder dort hin geführt) und zwischengespeichert werden, sondern kommt auf direktem Weg aus dem Laststromkreis. Die beste Lösung für Baugröße und Wirkungsgrad.
• 2. Die üblicherweise zum Zwischenspeichern der Löschenergie erforderlichen Kondensatoren entfallen und damit auch die Bedingung, dass sie zum Löschen ausreichend geladen sind. Der Gatestrom ist stets automatisch ausreichend bemessen, der Kathodenstrom wird einfach (ansatzweise hart) abgeschaltet.
• 3. Weiter entfallen damit auch ihre Innenwiderstände und ihre Serieninduktivitäten. Die Strompfade des Kommutierungskreises sind aufgrund des Fortfalls der Kondensatoren-Baugröße entsprechend kürzer. Eine kleine Löschkreisinduktivität in einem integriertem Konzept ergibt sich, wenn die während der Kommutierung miteinander konkurierenden Strompfade (über 2B und 3B) dicht nebeneinander angeordnet (Stichworte: bifilar, verdrillt, koaxial) sind. Die Toleranzen der ohnehin kleineren Löschkreisimpedanz beeinflussen außerdem kaum mehr die zeitlichen Verläufe der Gate- und Kathodenströme. Sie wirken sich in erster Linie nur auf die Kathoden-Gate-Spannungsverläufe aus. Der sich aus der negativen Gatespannung entwickelnde Gatestrom entlastet den abschaltenden Transistor des Spannungsbegrenzungsmittels (3B), wie es sonst ein Snubberglied tun würde. Bauteil- und Impedanztoleranzen wirken sich demnach auf Spannung und Abschaltverluste am Transistor aus, aber die Löschzeit des Thyristors wird quasi nur noch von ihm selbst bestimmt. Der Abschaltvorgang dürfte schneller werden und das bei kaskadierten Hochspannungsschaltgliedern wichtige gleichzeitige Schalten damit sicherer.
• 4. Weder Transistoren noch Transformatoren oder Leitungen kommen mit Hochspannung in Berührung. Von ihr werden lediglich der Lastkreis und seine Symmetrierwiderstände berührt, welche nach dem schon beschriebenen Minimalstromprinzip die energetische Erstversorgung bereitstellen können. Weiter muss nur noch die Signalübermittlung hohe Spannungen überwinden, was aber z. B. mit auf Lichtleiter basierenden Optokopplern auch für höchste Spannungen einfach möglich ist.
• 5. Auf der 'Point-of-Load' – Insel steht in allen Schaltzuständen genügend Steuerenergie für diverse Zwecke zur Verfügung.
• 6. Diese Art der energetischen Versorgung ist leicht über einen großen Arbeitsspannungsbereich machbar (weil ja zur Hochspannungsseite keinerlei Bezug besteht), und ebenso leicht über einen großen Strombereich: Bei 'Strommangel' führt das Spannungsbegrenzungsmittel (3B) automatisch weniger Strom und es verbleibt ein zweckmäßigerweise konstantes Spannungsniveau zur Energieentnahme. Für die Pausen einer Wechselstrom-Ansteuerung kann die so entnommene Energie leicht zwischengespeichert werden. Insbesondere große Hochspannungskaskaden werden kompakter.
• 7. Die zur Sperrverbesserung wünschenswerte negative Gatespannung entsteht bei beginnenden Leckströmen situativ automatisch.

This arrangement has particular advantages over the conventional IGCTs (Integrated Gate Commutated Thyristors):

• 1. The energy otherwise required for the negative gate current in the quenching phase does not have to be recovered (or led) to high-voltage potential and is temporarily stored in the load circuit. The best solution for size and efficiency.
• 2. The capacitors usually required for latching the erase energy accounts and thus also the condition that they are sufficiently charged for erasing. The gate current is always automatically sufficient, the cathode current is simply switched off (in some cases hard).
• 3. Next also eliminates their internal resistance and their series inductances. The current paths of the commutation circuit are correspondingly shorter due to the elimination of the capacitor size. A small cancellation circuit inductance in an integrated concept arises when the current paths competing with each other during the commutation (over 2 B and 3B ) are arranged close to each other (keywords: bifilar, twisted, coaxial). The tolerances of the already smaller erase circuit impedance also hardly influence the temporal characteristics of the gate and cathode currents. They affect themselves primarily only on the cathode gate voltage waveforms. The gate current developed from the negative gate voltage relieves the turn-off transistor of the voltage limiting means ( 3B ) as a snubber member would otherwise do. Component and impedance tolerances accordingly affect voltage and turn-off losses at the transistor, but the quenching time of the thyristor is quasi determined only by itself. The switch-off process is expected to become faster and the simultaneous switching of cascaded high-voltage switching elements thus safer.
• 4. Neither transistors nor transformers or lines come into contact with high voltage. From it only the load circuit and its balancing resistors are touched, which can provide the first energetic supply according to the already described minimum current principle. Next only the signal transmission must overcome high voltages, but z. B. with optical fiber-based optocouplers for high voltages is easily possible.
• 5. On the 'point-of-load' island, sufficient control energy is available for various purposes in all switching states.
• 6. This type of power supply is easily feasible over a wide working voltage range (since there is no relation to the high voltage side), and just as easily over a large current range: with 'current shortage', the voltage limiting device ( 3B ) automatically less power and it remains a suitably constant voltage level for energy extraction. For the pauses of an AC drive, the energy thus removed can be easily cached. In particular, large high-voltage cascades become more compact.
• 7. The negative gate voltage, which is desirable for blocking improvement, arises automatically automatically in the event of starting leakage currents.

If only GTOs are available that do not tolerate the full anode current at their gate connection, some of the advantages mentioned above must be avoided, but the ideal solution is still available: the energy required for erasing must be collected in the capacitors before they are erased , This is exactly the phase in which it is necessary for the energy supply ( 3 ) there is nothing closer than to tap the stream flowing through it.

Example high voltage capacitor discharge:

8th shows an arrangement for the controlled discharge of the capacitor battery of capacitor discharge welding machines. This z. B. a high-voltage IGBT connected to the high-voltage side (U _C ) of the capacitors discharge resistor (R ₁ ). There are only low switching frequencies below 1 hertz, but should be a (possibly automatic) unloading under all possible external fault conditions, including the failure of external auxiliary power counts, be possible. The arrangement shown here is energetically self-sufficient, low-loss and in both switching states sufficient energy is generated to switch to the other. During the off state, an external, against a voltage limit (within the power supply means 7 shown) working voltage-resistant minimum current resistance ( 7R ) the starting energy required to first turn on the discharge. This resistor and the semiconductor actuator ( 1 ) are the only components that come into contact with high voltage during normal operation. For safety reasons, because semiconductors can penetrate, all components that may be affected by such a breakdown must also be safely isolated elsewhere in relation to the rest of the control environment of the welding system. This is done by means of claim 8 according to the present invention signal transmission means which galvanically separate signals of any direction and may be useful highly insulating optocouplers.

To start the discharge is via a first signal transmission means ( 8th ) the unloading command to the gate control stage ( 2 ) Posted. The semiconductor actuator ( 1 ) turns on, discharge current starts to flow and the power supply means ( 3 ) begins its function. From then on is on this 'island' enough control energy for all further actions available.

This includes above all a particularly secure current-flow feedback of a second signal transmission means ( 9 ): False positive messages are made more difficult from an energetic point of view if the signal transmission means ( 9 ) without really using the semiconductor actuator ( 1 ) and the energy supply means ( 3 ) flowing power can not receive enough operating power.

Next (not shown figuratively) can z. B. Voltage detecting means, such as active measuring dividers, u./o. Discharge current regulator to accelerate the otherwise slower as the discharge progresses slower discharge.

Example AC / DC actuator:

Is the energy supply ( 3 ) arranged according to claim 4, to remove energy from the current path in each of the two current directions, so that is an energetically self-sufficient, backward (as in the above diode replacement) well conductive and forward (as in the capacitor discharge) normally controllable transistor allows.

This is used in particular in series with a second, oppositely poled transistor, which means using this series connection creates a universal actuator, which can set both DC in both directions, as well as AC.

Compared with similar universal switches, as they represent photovoltaic coupler - they have a much higher performance and a significant speed advantage, by which alternating currents in a simple manner with center frequencies in the range of z. B 1 to 50 kHz can be adjusted by pulse width modulation (PWM). Electromechanical contactors can also be replaced, with lower losses than triac-based modules do, and are continuously adjustable with less current harmonics (even though most of this is not required). A new quality of solid state relays!

• • Durch Parallelschaltung für Gleichströme, die höher als die Maximalströme der einzelnen Zellen sind. Sie können sowohl abschaltbar, wie auch nicht abschaltbar sein. Sie können sowohl rückwärts leitend, rückwärts sperrend oder für den Rückwärtsbetrieb unzulässig sein.
• • Für Wechselströme, insbesondere wenn diese Zusammenschaltung nur zwei rückwärts gut leitende Zellen aufweist: Hierbei werden außen die beiden innen nicht verbundenen Pole (10A + 20A) der Zellen angeschlossen. Jede der beiden, rückwärts leitenden Zellen übernimmt im Bedarfsfall für die eine Stromrichtung die Sperrfunktion, die der anderen, entgegengesetzt orientierten Zelle unmöglich ist. Werden beide Halbleiterstellglieder von einem Signalübermittlungsmittel (hier nicht dargestellt, die zweite Zelle 20Z folgt der ersten logisch als 'Slave') gesteuert, so werden Betriebsarten und Konfigurationen gängiger Photovoltaic Coupler für höhere Leistungen und Frequenzen erreicht. Ggf. kann diese Zusammenschaltung anstatt zweier Energieversorgungsmittel (103 + 203) auch nur ein gemeinsames Energieversorgungsmittel (wie in 12: 3), welches eingangsseitig dazu eingerichtet ist, dem Strompfad gemäß Anspruch 4 in jeder der beiden Stromrichtungen Energie zu entnehmen, aufweisen.

9 : An interconnection of several arrangements (here only two excellent) in a structural unit according to claim 9 reduces the number of outlets ('pin count') visible to the outside. These interconnections can be used:

• • Through parallel connection for direct currents that are higher than the maximum currents of the individual cells. They can be switched off as well as not be switched off. They can be reverse-conducting, reverse-blocking or inadmissible for reverse operation.
• • For alternating currents, in particular if this interconnection has only two cells conducting good backward conduction: in this case, the two poles not connected on the outside ( 10A + 20A ) of the cells connected. If necessary, each of the two reverse-conducting cells assumes the blocking function for one current direction, which is impossible for the other, oppositely oriented cell. If both semiconductor actuators by a signal transmission means (not shown here, the second cell 20Z following the first logically controlled as 'slave'), operating modes and configurations of common photovoltaic couplers for higher powers and frequencies are achieved. Possibly. can this interconnection instead of two energy supply means ( 103 + 203 ) also only a common energy supply means (as in 12 : 3 ), which on the input side is adapted to remove the current path according to claim 4 in each of the two current directions have energy.

Assembly in series connected cells:

• • Durch Kaskadierung als Halbleiterstellglied für Gleichspannungen, die höher sind, als die Sperrspannungen der einzelnen Zellen. Diese können sowohl abschaltbar, wie auch nicht abschaltbar sein. Sie können sowohl rückwärts leitend, rückwärts sperrend oder für den Rückwärtsbetrieb unzulässig sein.
• • Zusammenschaltung in einer Baueinheit, nur zwei, – vorzugsweise rückwärts sperrende – Zellen aufweisend, wodurch die von Thyristormodulen als 'Phaseleg' ('Phasenzweig') und die von Transistoren als Halbbrücke bekannte Konfiguration gegeben ist. Sie kann sowohl abschaltbar, wie auch nicht abschaltbar sein. Sie kann prinzipiell in allen Einsatzfeldern dieser Thyristormodule und Transistorhalbbrücken betrieben werden, inklusive Drehstromgleichrichter, Wechselrichter, Wechselstromgleichrichter, oder Wechselstromsteller (in sog. 'Antiparallelschaltung'), Drehstromsteller und Frequenzumrichter.

10 : A series arrangement of several arrangements (here only two excellent) in a structural unit, according to claim 10 in the same orientation, enables construction and operation of the following configurations:

• • By cascading as a semiconductor actuator for DC voltages that are higher than the blocking voltages of the individual cells. These can be switched off as well as not switched off. They can be reverse-conducting, reverse-blocking or inadmissible for reverse operation.
• • Interconnection in a unit, only two, - preferably reverse blocking - cells, which is given by the thyristor modules as 'Phaseleg'('phaseleg') and the known as transistors of the half-bridge configuration. It can be switched off as well as not switched off. In principle, it can be operated in all fields of application of these thyristor modules and transistor half-bridges, including three-phase rectifiers, inverters, AC rectifiers, or AC converters (in so-called 'anti-parallel'), three-phase controllers and frequency converters.

Example battery cell discharge monitor:

11 shows an arrangement for a Umpol- or deep discharge protection for a galvanic cell (BT). These are often used in series circuits of 6 or more similar galvanic cells. If one of the galvanic cells has a "premature" energy delivery during a discharging process, it is usually forced to use the energy of the other galvanic cells to continue to supply a relatively high discharge current. This usually leads to falling below the discharge end voltage and is detrimental to the relevant galvanic cell. In general, this process even leads to the polarity reversal of this galvanic cell and this is then also the useful power of the other galvanic cells detrimental. The arrangement after 11 has a half-bridge circuit of two semiconductor cells, similar to in FIG 10 on. For the sake of clarity, these two semiconductor cells are not drawn out in detail, but only with a symbol corresponding to the outer function. The transistor cell ( 20Z ) is a (for charging) reverse good conducting transistor and can be used to stop the discharge of a battery cell controller ( 202C ) turned off. In the simplest case, this battery cell controller only needs to monitor the discharge end voltage and can itself be isolated from the power supply of the gate control stage of ( 20Z ) be supplied. The semiconductor cell ( 10Z ) is one, - how to 3 described arrangement, which functions like an improved diode and automatically provides a bypass for the depleted galvanic cell. The particular advantages of this arrangement are that, firstly: the arrangement with such a protected galvanic cell to the outside, - as the unprotected galvanic cell - is bipolar, and therefore can easily occur at their installation point; and second, that cell protection and bypass do not require any residual energy from the galvanic cell itself. Thus, the maximum possible residual power of series circuit arrangements of galvanic cells is ensured even for possibly unexpected total failures of individual galvanic cells. A, - especially for emergency generators - important safety aspect!

Other two-pole examples: Regulated AC / DC actuator, remote switch, fuse, current limitation:

12 shows an optimized arrangement of a 2-pole AC / DC actuator with current measurement. Unlike the in 9 arrangement shown here, no cathode connection is led out, but it is only the connections ( 10A ) and ( 20A ) accessible from outside. Both semiconductor actuators ( 101 . 201 ) are generated by a common gate control stage ( 2 ). The energy supply means ( 3 ) is also present only once and for this purpose according to claim 4 on the input side adapted to remove the current path in each of the two current directions energy. Furthermore, the minimum current based, complementary power supply means ( 7 , With 7R ) according to claim 7 via the two diodes ( 107D . 207D ) parallel to the, - backward conductive - semiconductor actuators ( 101 . 201 ) coupled to allow start-up in each of the two current directions. Thus, a minimum current is passed parallel to the semiconductor actuator for the first start, which is oriented forward to the current direction and therefore still blocks without control.

With sufficient operating voltage, the gate control stage ( 2 ) the main current - as desired - completely, partially or pulsing on the semiconductor actuators ( 101 . 201 ) turn on. In normal operation, this flows mostly, ie apart from the minimum, over ( 7R ) possible current - via the semiconductor actuator ( 101 ), the input side of the power supply ( 3 ), the current detection means ( 9R which is a current evaluation means 9A downstream) and the semiconductor actuator ( 201 ), or the other way around.

Preferably, this arrangement is set up according to claim 11, in the control of the semiconductor actuators ( 1 . 4 , ...; 101 . 104 ; 201 . 204 , ...) to include the detected current, so that with this outward 2-pole arrangement, a current can not only be set, but also regulated, or it can in yet another form (eg, shut off in case of overcurrent) on it be reacted. The control can be done from the outside (eg by radio) or automatically, z. B. in limiting function (soft start), disconnecting (fuse), or both (a relatively harmless insertable into the holder fuse element). In this case, the tripping characteristic as needed -. For motor protection, line protection or semiconductor protection. It can be z. B. an effective value or a limit load integral are formed, but it can also z. B. for thyristors using modern μC technology and given voltage function to the current (keyword ABCD parameters), as well as a corresponding heat dissipation modeling, which corresponds to the transient thermal impedance curves, an even more precise and much nimble shutdown characteristic can be impressed. Conveniently, in the same unit also a 'normal' fuse is integrated, to which selectivity is given, so that the fuse usually never melts and a self-protection re-activation program in the event that the maximum cut-off voltage of the semiconductor is inductively exceeded.

General functional principles:

• • nach der Funktionsweise einer Diode (automatisch vorwärts leitend und rückwärts sperrend, als Low-Side- oder High-Side-Switch),
• • eines Transistors (vorwärts regelbar leitend, rückwärts leitend, sperrend oder verboten)
• • eines Thyristors (vorwärts nur mit und nach Ansteuerung leitend, rückwärts sperrend oder verboten),
• • eines Triacs (vorwärts und rückwärts mit und nach Ansteuerung leitend, ohne Ansteuerung jedoch nur so lange die Stromrichtung gleich bleibt),
• • eines monostabilen elektromechanischen Relais (vorwärts und rückwärts nur während der Ansteuerung leitend),
• • eines bistabilen elektromechanischen Relais (vorwärts und rückwärts mit und nach Ansteuerung leitend, bis zu einer weiteren Ansteuerung, vorzugsweise an einem anderen Steueranschluss),
• • eines einstellbaren ohmschen Widerstandes (ggf. für beide Stromrichtungen),
• • einer einstellbaren, oder fest eingeprägten Spannungsbegrenzung (Gegenzellen),
• • einer einstellbaren, oder fest eingeprägten Strombegrenzung (z. B. für LEDs),
• • einer rücksetzbaren, ggf. programmierbaren u./o. protokollierenden, uni- oder bidirektionalen Überstromabschaltung (Sicherung),
• • von Sanftanlaufgeräten (für Motoren, Kondensatorlade- und Entladeschaltungen),
• • oder von Funkstellgliedern,

wobei die Anwendungen der Halbleiterfunktionsweisen eher in Gleichrichtern, Wechselrichtern, Umrichtern, Gleichstromstellern, Wechselstromstellern, Drehstromstellern oder in Polygonschaltungen liegen, und die der elektromechanischen Funktionensweisen eher in der übrigen elektrischen Schaltungstechnik.The list also mentions the usability of an arrangement or interconnection according to one of the functional principles listed below

• • according to the function of a diode (automatic forward conducting and reverse blocking, as a low-side or high-side switch),
• • a transistor (forward-conducting, reverse-conducting, blocking or prohibited)
• • a thyristor (forward only with and after control conductive, reverse blocking or prohibited),
• • a triac (conducting forward and backward with and after activation, without activation, but only as long as the current direction remains the same),
• • a monostable electromechanical relay (conducting forward and reverse only during activation),
• A bistable electromechanical relay (conducting forward and backward with and after activation, up to a further activation, preferably at another control connection),
• • an adjustable ohmic resistance (possibly for both current directions),
• • an adjustable or firmly impressed voltage limitation (counter cells),
• • an adjustable or permanently impressed current limitation (eg for LEDs),
• • a resettable, possibly programmable u./o. logging, uni- or bidirectional overcurrent cut-off (fuse),
• • of soft-starters (for motors, capacitor charging and discharging circuits),
• • or by radio operators,

where the applications of the semiconductor functions are more likely to be in rectifiers, inverters, inverters, DC-DC, AC, three-phase or polygon circuits, and those of the electromechanical functions tend to be in the rest of the electrical circuitry.

In many cases, the invention enables the advantageous replacement of classical semiconductors in given environments by more modern ones.

Perspectives of device construction:

In addition, important structural advantages can be identified for new devices: the power semiconductors, their control and their energy supply are matched perfectly to each other's performance. In particular, it is very easy to cover large voltage ranges (blocking voltages, DC link voltages) together. The so unpretentious and universally applicable modules can be built compactly and produced with volumes and marketed, because they fit into the most diverse application environments and can be used eg. B. can be controlled directly by microprocessors. The central control boards, in turn, no longer require any 'high-voltage ranges' and may possibly be completely removed elsewhere, eg. B. within a control unit. In addition, the problem of interference is reduced. The design of the devices is shortened and less error prone.

Hints for understanding:

Advantageous design features and developments of the individual subjects of the invention are contained in the respective dependent claims and their descriptions.

The claims to the invention are not limited to the described embodiments, but also include all in the context of the invention equally effective realizations. Moreover, the invention is not limited to the combination of features contained in each of the independent claims. This means that in principle each individual feature of each independent claim can be omitted or replaced by at least one individual feature disclosed elsewhere in the application. In this respect, the claims are to be understood merely as a formulation attempt for the invention.

In particular, the representations of the semiconductor actuators (predominantly) as MOSFETs ultimately describe, by way of example only, a multiplicity of possible inventive realizations. However, these mosfets can also be used (together with the start-up enhancers if necessary in parallel) 1A ) may be replaced by IGBTs, (GTO) thyristors, triacs, bipolar transistors and others. In the latter case you can see their 'basic connection' for the name 'Gate'.

Furthermore, the control or logic stages ( 3 : 2R ) of supplementary semiconductor actuators ( 4 ) not within the gate control stages ( 2 ) for the first semiconductor actuator ( 1 ), but can also be completely or partially in, before, or after the gate control stages ( 5 ) for the supplementary semiconductor actuators ( 4 ) are located.

Finally, modules are mentioned, the z. B. contain two series transistors (half bridges), or z. B. ESBT (Emitter Switched Bipolar Transistors, with Mosfet in the emitter line of a bipolar transistor), which may be both the semiconductor actuator ( 1 ), as well as the energy supply ( 3 ) can belong.

List of figures:

1 Arrangement: Semiconductor actuator and parallel-connected power supply means (prior art)

2 Arrangement: Semiconductor actuator and series-connected power supply means (main inventive idea)

3 Arrangement: Further parallel-connected semiconductor actuator, for example with MOSFET in 'reverse' operating direction (power increased diode replacement)

4 Arrangement: Additional parallel, capacitive coupled energy extraction, Mosfet example 'backwards' operated (higher frequency diode replacement)

5 Arrangement: Additional parallel, minimum current based energy extraction, Mosfet exemplary 'forward' (eg capacitor discharge switch)

6 Arrangement: Serial and parallel power supply combined, Mosfet exemplary 'forward', with greater control energy needs in all states

7 Cascade switching from disconnectable power supply and GCT

8th Arrangement: Two galvanically separating signal transfers, for example with Mosfet in 'forward' operating direction (eg capacitor discharge switch)

9 Parallel connection (here only one-pole connection of the cathodes) of several cells (Z = the aforementioned arrangements) in a structural unit.

10 Series connection of several cells (Z) in one unit by internal connection of unlike poles (cascade / phase branch / half-bridge)

11 Arrangement as Umpol- or deep discharge protection for energy storage

12 Optimized arrangement of a 2-pole AC / DC actuator with current measurement

Reference numerals:

• A, K: anode, cathode called output terminal ( 9 . 10 )
• Note: The assignment of the terms anode and cathode is arbitrary and was in 9 and 10 contrary to the body diodes contained in Mosfets made to better fit the conditions of thyristors.
• BT: battery, or preferably only a galvanic battery cell
• G1, G2, G3: situation-related similarities of the control energy requirement of semiconductor actuators of different technologies
• R _L : load resistance of the semiconductor actuator, especially discharge resistor of a capacitor battery
• U _C : high voltage potential of a capacitor battery
• Z; 10Z . 20Z : (Semiconductor) cell ( 2 ); Cell with ordinal number ( 9 . 10 )
• 1 ; 1A : first semiconductor actuator (possibly each cell), most often represented as an N-channel mosfet with body diode; Start-up improver, e.g. B. (only with backward conductive semiconductor actuators), as shown here, a Schottky diode, which at low backward voltages of the semiconductor actuator ( 1 ), which reduces start-up hindrance of the body diode.
• 2 ; 2A . 2 B ; 2C : Gate control stages for the first semiconductor actuator; upper, lower half-bridge transistor of this gate control stage; current limit
• 2R ; 2E Control or logic stage for the modulation of the control signals of the supplementary semiconductor actuators ( 4 ), if necessary with multi-pole (bus) output for individual control of individual; Energy decoupling means of 'further' gate control stages ( 5 )
• 3 : Energy supply means of the gate control stage (s) and possibly other circuit parts. By a possibly indicated here polarity on the energy input side and the operating direction of the MOSFET semiconductor actuator is displayed.
• 3B ; 3E : Voltage limiting means at the input of the energy supply means ( 3 ). Can also rule u./o. be switched off; energy storage
• 3P : parallel connected power supply means of the gate control stage (s) and possibly other circuit parts. Preferably with input filter, (possibly sinusoidal) self-resonating resonanzwandler, (possibly piezoelectric) transformer, or photovoltaic energy transformation.
• 4 at least one supplementary semiconductor actuator connected in parallel with the first semiconductor actuator for increasing the power of the first semiconductor actuator
• 5 at least one gate control stage for supplementary semiconductor actuators
• 6 : additional energy supply with parallel, capacitively coupled energy extraction (snubber current usage)
• 7 ; 7R : additional power supply with parallel, minimum current based energy extraction; discrete, voltage-resistant series resistor
• 8th . 9 ; galvanically isolating signal transmission means, here shown as optocouplers
• 9A ; 9R : Current evaluation stage; Current detection means, e.g. B. Current measuring resistor or current transformer
• 10A . 20A ; 20K : first anode terminal, second anode terminal; second cathode connection
• 101 . 102 . 103 . 107D ; 201 . 202 . 203 . 207D ; ... ingredients like 1 . 2 . 3 . 7D , ..., but especially the first one; the second cell; ... belonging
• 202C : Battery cell controller

Terme:

DC / DC converter: An electronic circuit with a DC input for electrical energy and a DC output for electrical energy, whereby the electrical energy emitted at the output is obtained from the energy absorbed at the input. Preferably, input and output voltage have different potentials, u./o. very different sizes.

Diode replacement: Application in which the low on-state resistances provided by MOSFETs are used to achieve lower flow voltages than conventional diodes can. Because Mosfets can only block in the forward direction due to their body diode and the low starting resistances also in Reverse direction are reached, the Mosfets are doing 'backward' operated. This method is often called 'synchronous rectification'.

Energy storage: device that can deliver DC while maintaining a voltage. Can also be several individual energy storage elements, eg. B. capacitors or galvanic cells, as well as semiconductors and energy management means have, for. B. for special clamping voltage-energy characteristics.

Power condition (the gate control stage (s)): DC powered circuits accept i. a. a certain range of permissible input voltages. In the simplest case, a sufficient amount of this voltage can be ensured for a short time via an energy store (consisting for example of capacitors) and the power supply position can be determined based on the relation of the currently applied voltage to the at least necessary operating voltage of the circuit.

Power supply means: device for providing electrical energy, e.g. B. a DC / DC converter. The description of the position of the power supply means within the inventive arrangement, unless otherwise stated, refers to the power input side.

GCT (Gate-Commutated-Thyristor): GTO-thyristor, which is set to switch off by an erroneous commutation of the anode current from the cathode to the gate.

GTO thyristor (gate turn-off thyristor): Thyristor, which can be switched off by negative gate current. General term for the GCT.

Semiconductor switching element: semiconductor actuator, which is not not continuously adjustable, but can only switch, or even module that is operated only switching. Also diodes are understood here as semiconductor switching elements without control input.

Semiconductor actuator: Single controllable power semiconductor (mostly: transistor), or circuit with at least one, for adjusting an electric current. Semiconductor actuators can also be semiconductor circuits (eg thyristors) comprising circuits (modules) and z. For example, with the aid of a continuously variable pulse width, a current can be set continuously despite the switching elements operated only by switching (for example, in the step-down converter).

Integrated Gate-Commutated-Thyristor (IGCT): Assembly with GCT and capacitor high-rate discharge discharge device with high negative gate current.

Low-current based power supply / coupling: Mostly using high-impedance resistors in an arrangement which affect the actual function of the circuit and / or. would lead to large losses if not just for minimal power. It does not allow the regular operation with mains or higher frequency, but z. B. the compensation of creepage and leakage currents, u./o. Component tolerances, a voltage measurement, or the accumulation of energy required for switching over a longer period.

Signaling means: component or device for (usually galvanic separating) transmission of signals (information). z. As opto-coupler, transformer, or radio transmitter.

Cell: Here, if not a galvanic cell circuit arrangement, in each case at least one semiconductor actuator ( 1 . 101 . 201 , ...), a gate control stage ( 2 . 102 . 202 , ...) and a power supply ( 3 . 103 . 203 , ...) full.

QUOTES INCLUDE IN THE DESCRIPTION

This list of the documents listed by the applicant has been generated automatically and is included solely for the better information of the reader. The list is not part of the German patent or utility model application. The DPMA assumes no liability for any errors or omissions.

Cited patent literature

• DE 000010045093 A1 [0011]
• DE 102008049677 A1 [0014]

Claims (11)

Arrangement ( 2 ) comprising a semiconductor actuator ( 1 ) for setting a current flow, a gate control stage ( 2 ) of the semiconductor actuator and a power supply means ( 3 ) for the gate control stage, which has an input and an output side, characterized in that the input side of the energy supply means ( 3 ) in series with the output side of the semiconductor actuator ( 1 ) and the power supply means ( 3 ) is set up to obtain energy from this current even if the current flow remains constant, and in particular no time change in the control of the semiconductor actuator ( 1 ) is required. Arrangement according to claim 1, characterized in that the energy supply means ( 3 ) has a self-sustaining in current flow resonant converter and preferably input-side voltage limiting means ( 3 : 3B ) and an energy store ( 3E ) having. Arrangement ( 7 ) according to one of the preceding claims, the energy supply means ( 3 ) is arranged on the input side to interrupt the current path under certain conditions or to a command, this interruption also being lower than the first semiconductor actuator ( 1 ) blocking semiconductors can be completed and with possibly even controllable voltage limiting means ( 3B ) can be limited. Arrangement ( 2 . 12 ) according to one of the preceding claims, the energy supply means ( 3 ) is arranged on the input side to remove energy from the current path in each of the two current directions. Arrangement ( 3 ) according to one of the preceding claims, one or more output side additionally in parallel complementary semiconductor actuators ( 4 ), wherein the switching power of the supplementary semiconductor actuators can also exceed that of the first semiconductor actuator, characterized in that the additional semiconductor actuators of at least one further gate control stage ( 5 ), whose energy supply via at least one energy decoupling means ( 2E ) from the power supply of the first gate control stage ( 2 ) is decoupled. Arrangement ( 3 ) according to the preamble of claim 5, at least one rule, or logic stage ( 2R ) arranged to condition the supplementary semiconductor actuators ( 4 ) with at least one of the drive signal of the first semiconductor actuator ( 1 ) to trigger different signal, z. B. amplified at low total current, the current distribution to the first semiconductor actuator ( 1 ) and thus the power supply of the energy supply ( 3 ) to favor. Arrangement ( 3 . 4 . 5 . 6 ) according to one of the preceding claims, characterized in that it comprises at least one further parallel to a semiconductor actuator ( 1 ; 4 , ...) arranged energy supply means ( 1A . 3P . 6 . 7 ) comprising the power supply of at least one of the gate control stages ( 2 ; 5 , ...) can supplement under certain operating conditions, wherein the energy transport from the output side of the semiconductor actuator directly or indirectly ( 3 : 1A , based on minimal voltage, indirectly via 3) to at least one of the gate control stages, but also z. B. via a capacitive ( 4 : 6 , for high frequencies) or minimal current based ( 5 : 7 + 7R , z. B. for startup operations) coupling, or via a general parallel-connected power supply ( 6 : 3P ). Arrangement ( 8th ) according to one of the preceding claims, which has at least one galvanically separating signal transmission means with any signal direction (eg switching command and / or current-flowing feedback). Interconnection ( 9 ) of a plurality of arrangements according to any one of the preceding claims (now called 'cells') in a structural unit, each cell having on the output side each pole called an anode and a pole called Pol, characterized in that it is at least one kind of pole an electrical connection has all of these poles of the same name of all cells, said interconnection preferably consists of only two cells and may optionally have advantageous backward conductive semiconductor actuators. Interconnection ( 10 ) of cells according to the preamble of claim 9 in a structural unit, characterized by at least one electrical connection of a cathode of a cell with an anode of another cell, wherein the number of these compounds preferably corresponds to the number of cells contained, reduced by one and so all cells lie with the same orientation in a chain, said interconnection preferably consists of only two cells which may optionally have advantageous reverse blocking semiconductor actuators (not shown here). Arrangement ( 12 ) according to one of the preceding claims, at least one current detection means ( 9R ) and at least one current evaluation means ( 9A ), preferably arranged to be in the control of the semiconductor actuators ( 1 . 4 , ...; 101 . 104 ; 201 . 204 , ...) to include the information from the recorded current.

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