DE202009012685U1 - Photovoltaic module with barrier layer - Google Patents
Photovoltaic module with barrier layer Download PDFInfo
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- DE202009012685U1 DE202009012685U1 DE202009012685U DE202009012685U DE202009012685U1 DE 202009012685 U1 DE202009012685 U1 DE 202009012685U1 DE 202009012685 U DE202009012685 U DE 202009012685U DE 202009012685 U DE202009012685 U DE 202009012685U DE 202009012685 U1 DE202009012685 U1 DE 202009012685U1
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- 230000004888 barrier function Effects 0.000 title claims abstract description 32
- 239000011521 glass Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000011787 zinc oxide Substances 0.000 claims abstract description 3
- 239000002985 plastic film Substances 0.000 claims description 6
- 229920006255 plastic film Polymers 0.000 claims description 6
- 229910044991 metal oxide Inorganic materials 0.000 claims description 5
- 150000004706 metal oxides Chemical class 0.000 claims description 5
- 150000003377 silicon compounds Chemical class 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 2
- 239000000615 nonconductor Substances 0.000 claims description 2
- 230000005611 electricity Effects 0.000 abstract description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 10
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000009993 protective function Effects 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 241000396922 Pontia daplidice Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03925—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIIBVI compound materials, e.g. CdTe, CdS
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
Photovoltaik-Modul mit:
a. einem lichtdurchlässigen Substrat, insbesondere aus Glas,
b. einer lichtdurchlässigen leitenden Schicht, insbesondere ein Bor-dotiertes Zinkoxid, und
c. einer aktiven Schicht zum Wandeln von Licht in elektrischen Strom
dadurch gekennzeichnet, dass
zwischen dem Substrat und der lichtdurchlässigen leitenden Schicht eine lichtdurchlässige Barriereschicht angeordnet ist.Photovoltaic module with:
a. a translucent substrate, in particular of glass,
b. a translucent conductive layer, in particular a boron-doped zinc oxide, and
c. an active layer for converting light into electricity
characterized in that
a translucent barrier layer is arranged between the substrate and the light-transmitting conductive layer.
Description
Die Erfindung betrifft ein Photovoltaik-Modul mit einem Substrat, insbesondere aus Glas, einer lichtdurchlässigen leitenden Schicht und einer aktiven Schicht zum Wandeln von Licht in elektrische Strom.The invention relates to a photovoltaic module with a substrate, in particular made of glass, a light-transmitting conductive layer and an active layer for converting light into electrical current.
Bei Photovoltaik-Modulen, insbesondere solchen basierend auf Dünnschicht-Technologien, wie z. B. CdTe, CIGSSe oder aSi/μcSi Tandem Solarzellen, werden transparente leitfähige Schichten verwendet, um den genierten Strom an der der Sonne zugewandten Vorderseite abzuleiten. Diese transparenten leitfähigen Schichten werden aus Metalloxiden hergestellt (TCO – transparent conducting oxide), beispielsweise aus Fluor-dotiertem Zinnoxid (SnO2:F), Bor-, Aluminium- oder Gallium-dotiertem Zinkoxid (ZnO), sowie Indium-Zinnoxid (In2O3:SnO2, ITO). Im Falle Silizium-basierter Dünnschicht Module, wird üblicherweise auch auf die Rückseite eine TCO Schicht aufgebracht. In Kombination mit einem Reflektor, wie z. B. weißer Farbe oder einer Metallschicht, wird dadurch die Effizienz der Module erhöht.In photovoltaic modules, especially those based on thin-film technologies, such. For example, CdTe, CIGSSe or aSi / μcSi Tandem solar cells, transparent conductive layers are used to dissipate the strained current at the solar facing front. These transparent conductive layers are made of metal oxides (TCO - transparent conducting oxide), for example, fluorine-doped tin oxide (SnO2: F), boron, aluminum or gallium-doped zinc oxide (ZnO), and indium-tin oxide (In2O3: SnO2 , ITO). In the case of silicon-based thin-film modules, a TCO layer is usually also applied to the rear side. In combination with a reflector, such. B. white color or a metal layer, this increases the efficiency of the modules.
Im Gesamtsystem aus Photovoltaik-Modul und Wechselrichter treten Leckströme auf. Dabei ist die Spannungslage zwischen Photovoltaik-Modul und Erdpotenzial entscheidend. Durch die Leckströme kann die transparente leitfähige Schicht beschädigt werden. Bei Photovoltaik-Modul mit Rahmen sind dies Beschädigungen bei hohen elektrischen Spannungen von ca. 500 V zwischen Rahmen und Anschlussdose des Moduls besonders ausgeprägt. Bei PV-Modulen ohne Rahmen tritt die Beschädigung im Wesentlichen in der Nähe der metallischen Klemmhalter auf.In the overall system consisting of photovoltaic module and inverter, leakage currents occur. The voltage between the photovoltaic module and ground potential is decisive. The leakage currents can damage the transparent conductive layer. For photovoltaic module with frame, this damage is particularly pronounced at high electrical voltages of about 500 V between the frame and junction box of the module. For PV modules without frames, the damage essentially occurs near the metal clamp holders.
Als Lösung wurde bisher vorgeschlagen Wechselrichter mit Transformatoren zu verwenden. Wird das Photovoltaik-Modul über einen Transformator mit dem Wechselrichter gekoppelt, werden beide Systeme galvanisch getrennt und die Leckströme werden unterdrückt. Die Verwendung von Wechselrichtern mit Transformator führt jedoch zu einem niedrigeren Gesamtsystemwirkungsgrad, da Wechselrichter mit Transformator einen um ca. zwei Prozent niedrigeren Wirkungsgrad haben. Außerdem sind die Wechselrichter wesentlich teurer als trafolose Wechselrichter.As a solution has been proposed to use inverters with transformers. If the photovoltaic module is coupled to the inverter via a transformer, both systems are galvanically isolated and the leakage currents are suppressed. However, the use of inverters with transformer results in lower overall system efficiency, as inverters with transformers have approximately two percent lower efficiency. In addition, the inverters are much more expensive than transformerless inverters.
Es ist folglich Aufgabe der vorliegenden Erfindung ein Photovoltaik-Modul bereitzustellen, das mit einem Wechselrichter ohne Transformator zum Einsatz kommen kann und bei dem die Beschädigung der durchsichtigen leitenden Schicht verringert bzw. ausgeschlossen werden kann.It is therefore an object of the present invention to provide a photovoltaic module that can be used with an inverter without a transformer and in which the damage of the transparent conductive layer can be reduced or excluded.
Diese Aufgabe wird mit dem Photovoltaik-Modul gemäß Anspruch 1 gelöst. Dieses Modul umfasst a) ein lichtdurchlässiges Substrat, insbesondere aus Glas, b) eine lichtdurchlässige leitende Schicht, insbesondere ein Bor-dotiertes Zinkoxid, und c) eine aktive Schicht zum Wandeln von Licht in elektrischen Strom und ist dadurch gekennzeichnet, dass zwischen dem Substrat und der lichtdurchlässigen leitenden Schicht eine lichtdurchlässige Barriereschicht angeordnet ist. Die Barriereschicht ist so ausgebildet, dass ein Diffusion von Ionen etc. in die lichtdurchlässige leitende Schicht verhindert oder zumindest verringert werden kann. Die transparente leitende Schicht kann per Niederdruckgasphasendeposition hergestellt werden.This object is achieved with the photovoltaic module according to claim 1. This module comprises a) a translucent substrate, in particular of glass, b) a light-transmitting conductive layer, in particular a boron-doped zinc oxide, and c) an active layer for converting light into electrical current and is characterized in that between the substrate and the light-transmitting conductive layer is a transparent barrier layer is arranged. The barrier layer is formed so that diffusion of ions, etc. into the transparent conductive layer can be prevented or at least reduced. The transparent conductive layer can be produced by low pressure gas phase deposition.
Bevorzugt, kann dabei die lichtdurchlässige Barriereschicht eine Verbindung aus einem Halbleiter und einem Nichtleiter aufweisen. Besonders vorteilhaft kann die lichtdurchlässige Barriereschicht ein Halbleiteroxid, bevorzugt aus einer oxydischen Siliziumverbindung, weiter bevorzugt eine SiOx oder SiOxNy Schicht aufweisen. Besonders für diese Materialien hat sich gezeigt, dass eine Beschädigung der lichtdurchlässigen leitenden Schicht verhindert werden kann. Diese Schicht kann nasschemisch, beispielsweise durch Kathodenzerstäubung (Sputtern), plasma-unterstützte Gasphasen Deposition (PECVD) oder per Pyrolyse (Gasphase) aufgebracht werden. Darüberhinaus ist es bei einem Glassubstrat und bei oxydischen Siliziumverbindungen von Vorteil, dass die Ausdehnungskoeffizienten fast gleich sind und eine gute Hafteigenschaft der Siliziumverbindung auf Glas vorliegt. Dies kann zur Verlängerung der Lebensdauer des Moduls beitragen.In this case, the light-permeable barrier layer may preferably have a compound of a semiconductor and a nonconductor. Particularly advantageously, the transparent barrier layer may comprise a semiconductor oxide, preferably of an oxidic silicon compound, more preferably an SiO x or SiO x N y layer. Especially for these materials, it has been found that damage to the light-transmitting conductive layer can be prevented. This layer can be applied wet-chemically, for example by sputtering, plasma-assisted gas-phase deposition (PECVD) or by pyrolysis (gas phase). Moreover, in the case of a glass substrate and oxidic silicon compounds, it is advantageous that the expansion coefficients are almost the same and a good adhesive property of the silicon compound to glass exists. This can help extend the life of the module.
Gemäß einer bevorzugten Variante, kann die lichtdurchlässige Barriereschicht mehrere Teilschichten aufweisen. Durch den Einsatz mehrerer Schichten kann die Schutzfunktion weiter verbessert werden.According to a preferred variant, the translucent barrier layer may have several partial layers. By using multiple layers, the protective function can be further improved.
Weiter bevorzugt kann die Barriereschicht mindestens eine Metalloxidschicht aufweisen. Diese Schichten sind besonders hart und beständig und unterstützen somit die Schutzfunktion.More preferably, the barrier layer may comprise at least one metal oxide layer. These layers are particularly hard and durable and thus support the protective function.
Gemäß einer weiteren bevorzugten Ausführungsform, kann die Barriereschicht zusätzlich als Antireflektionsschicht ausgebildet sein. Insbesondere kann dabei der Brechungsindex der Barriereschicht zwischen dem Brechungsindex des Substrats und der durchsichtigen lichtdurchlässigen leitenden Schicht liegen. Dadurch kann der Wirkungsgrad des Moduls weiter gesteigert werden.According to a further preferred embodiment, the barrier layer may additionally be formed as an anti-reflection layer. In particular, the refractive index of the barrier layer may be between the refractive index of the substrate and the transparent transparent conductive layer. As a result, the efficiency of the module can be further increased.
Vorteilhafterweise kann das Photovoltaik-Modul eine zweite lichtdurchlässige leitenden Schicht, wobei die aktive Schicht zwischen der ersten und zweiten lichtdurchlässigen leitenden Schicht angeordnet ist, ein zweites Substrat, insbesondere aus Glas, und eine zweite Barriereschicht, die zwischen der zweiten lichtdurchlässigen leitenden Schicht und dem zweiten Substrat angeordnet ist, umfassen. Durch die Sandwichbauweise wird die aktive Schicht vor Schäden und durch die beiden Barrierschichten werden die leitenden Schichten ebenfalls vor Schäden geschützt.Advantageously, the photovoltaic module, a second transparent conductive layer, wherein the active layer is disposed between the first and second transparent conductive layer, a second substrate, in particular made of glass, and a second barrier layer interposed between the second transparent conductive layer and the second substrate. The sandwich construction protects the active layer from damage and the two barrier layers also protect the conductive layers from damage.
Bevorzugt, können zwischen der zweiten lichtdurchlässigen leitenden Schicht und dem zweiten Substrat eine reflektierende Schicht und eine Kunststofffolie angeordnet sein. Dank der Verbundwerkstoffweise wird ein sehr langlebiges Modul geschaffen. Durch den zusätzlichen Reflektor wird die Lichtausbeute verbessert. Eventuell kann die Reflektorschicht dank der zweiten Barriereschicht erzielt werden. Hierzu könnte man vorteilhafterweise eine hochbrechende dielektrische Schicht oder eine Multilayeranordnung einsetzen.Preferably, a reflective layer and a plastic film may be disposed between the second transparent conductive layer and the second substrate. Thanks to the composite material, a very durable module is created. The additional reflector improves the light output. Perhaps the reflector layer can be achieved thanks to the second barrier layer. For this purpose, one could advantageously use a high-index dielectric layer or a multilayer arrangement.
Gemäß einer vorteilhaften Variante kann das Modul rahmenlos ausgebildet sein. Dies verringert die Leckströme, die über den Rahmen in den verschiedenen Schichten des Moduls auftreten können.According to an advantageous variant, the module can be designed frameless. This reduces the leakage currents that can occur across the frame in the various layers of the module.
Ferner bevorzugt, kann am zweiten Substrat vom Seitenrand des Moduls beabstandet mindestens ein Halteelement angeordnet sein. Durch die Beabstandung vom Rand treten die sonst üblichen Leckströme über die Klammern nicht mehr auf.Furthermore, at least one holding element can be arranged at a distance from the side edge of the module on the second substrate. Due to the spacing from the edge, the otherwise usual leakage currents via the clamps no longer occur.
Gemäß einer weiter bevorzugten Ausgestaltung, kann die aktive Schicht eine amorphe und eine mikrokristalline Siliziumschicht aufweisen. Dies führt zu einer weiter verbesserten Ausnutzung der Sonnenenergie.According to a further preferred embodiment, the active layer may have an amorphous and a microcrystalline silicon layer. This leads to a further improved utilization of solar energy.
Anhand der beiliegenden Figuren werden die Erfindung und ihre Eigenschaften im Detail beschrieben. Es zeigen:The invention and its characteristics will be described in detail with reference to the accompanying figures. Show it:
Die
Das Modul umfasst ein erstes lichtdurchlässiges Substrat
Auf dem Substrat
Dann folgt eine aktive Schicht
Im hier dargestellten Dünnschicht Photovoltaik-Modul befindet sich auf der anderen Seite der aktiven Schicht
Darauf folgt ein Reflektor
Über eine Kunststofffolie
In der besonders bevorzugten Ausgestaltung ist diese Schicht eine oxydische Siliziumverbindung, beispielsweise SiOx, SiOxNy. Diese Schicht kann auch mehrschichtig als Multilager ausgebildet sein, wobei auch Metalloxidschichten, die sehr hart sind, zum Einsatz kommen können. In einer weiteren Variante wird das Material bzw. der Multilayeraufbau der Schicht
Die Barriereschicht
In einer Variante kann die Barriereschicht
Die Struktur des Photovoltaik-Moduls
Dadurch wird auch die zweite leitende Schicht
Die zweite Barriereschicht
Um diese üblicherweise metallischen Elemente so weit wie möglich von den leitenden Schichten anzuordnen, um eine Korrosion zu verhindern, sind diese Haltelemente
Die Halteelemente
Dank der Bereitstellung der Barriereschichten
Claims (12)
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DE202009012685U DE202009012685U1 (en) | 2009-09-18 | 2009-09-18 | Photovoltaic module with barrier layer |
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Publication number | Priority date | Publication date | Assignee | Title |
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US6082060A (en) * | 1996-08-12 | 2000-07-04 | Siemens Solar Gmbh | Device for affixing a flat plate-shaped body onto a support |
US20080105302A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
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US6082060A (en) * | 1996-08-12 | 2000-07-04 | Siemens Solar Gmbh | Device for affixing a flat plate-shaped body onto a support |
US20080105302A1 (en) * | 2006-11-02 | 2008-05-08 | Guardian Industries Corp. | Front electrode for use in photovoltaic device and method of making same |
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