DE202005009955U1 - Electrically operated component, e.g. for use as a pixel element in a visual display element, has hole and electron injecting contacts and a gate electrode between which voltages are applied to spatially control light emission - Google Patents

Abstract

Electrically operated component with a substrate and an active layer (2) that transports electrons and holes. In contact with the active layer are electron injecting (3) and hole-injecting (4) contacts on top of which are an insulating layer (5) and a gate electrode (6). The active layer has a laterally varying emission wave length, whose emission is controlled by the applied voltage between the gate and charge-carrier injecting electrodes.

Description

State of the art

The present invention relates to an electrically operated device which generates the emission of light electrically and whose emission spectrum (color) can be changed by applying one or more voltages. Such a component is referred to below as a color changeable light source. Possible applications of such color-changeable light sources are full-color displays, in particular flat-panel displays .Pixels of such color screens usually consist of three light-emitting diodes of different color, red, blue and green, which can be controlled separately from one another , in particular on the basis of organic light-emitting diodes, are for example made US 5,294,870 and US 5,707,745 known. Such designs have the disadvantage that the pixels consist of three separate light-emitting diodes, which requires complex manufacture and complex electrical requirements.

Furthermore, the production of pixels for color displays is characterized by the stacking of several light emitting diodes US 6,312,836 known. Again, the color variable light source has a structure that requires a high manufacturing and usually also cost. In addition, at least three voltages are necessary to control the color emission.

Further Methods of preparation color changeable organic light-emitting diodes caused by the variation of the applied Voltage controlled are based on the field dependence the charge carrier mobilities or excited state emission properties (C.C. Huang, H.F. Meng, G.K. Ho, C.H. Chen, C.S. Hsu, J.H. Huang, S.F. Horng, B.X. Chen and L.C. Chen "Colortunable multilayer light-emitting diodes based on conjugated polymers "in Applied Physics Letters 84, 1195-1197 (2004); H. Tan and J. Yao "Color tunable organic thin film light emitting devices based on heterostructure "in Proceedings of the SPIE 5280, 495-498 (2004); J. Kalinowski, P. Di Marco, M. Cocchi, V. Fattori, N. Camaioni and J. Duff "Voltage-tunable-color multilayer organic light-emitting diode "in Applied Physics Letters 68, 2317-2319 (1996)). However, the simultaneous control of the emission spectrum and the emission intensity usually not possible. Likewise, the variation of the emission spectrum is often limited possible.

Of the present invention is based on the object, an electrically operated, color changeable Refine light source of the type mentioned in such a way that a simpler production and improved control of the emission characteristics is made possible. In particular, the light source according to the invention does not consist of several separate light emitting diodes, which allows easier control.

Advantages of the invention

The Inventive color changeable light source has the advantage that a variation of the emission spectrum by the modulation of one or two voltages) can be achieved. Likewise, the intensity the emission simultaneously with the emission spectrum by two applied Tensions are controlled. Compared to color pixels for display applications, which conventionally three light-emitting diodes are constructed and by at least three voltages be controlled, the light source of the invention has a simplified Construction. About that In addition, the application of the generic color variable light sources is not necessarily limited to color displays. In principle, allows one advantageous embodiment Such a light source and the color variable emission of coherent radiation.

The Light source of the invention is based on the principle of the light-emitting, ambipolar field-effect transistor and on the lateral shift of the emission zone by the modulation a voltage applied to the light source, the emitting one Layer in addition has a lateral variation of the emission spectrum.

The functional principle of a light-emitting, ambipolar field-effect transistor and methods of production are known to the person skilled in the art (see, for example, BJH Schön, A. Dodabalapur, Ch.Kloc and B. Batlogg, "A Light-Emitting Field-Effect Transistor", Science 290, 963- 965 (2000); C. Rost, S. Karg, W. Riess, MA Loi, M. Murgia and M. Muccini, "Ambipolar light-organic field-effect transistor", Applied Physics Letters 85, 1613-1615 (2004 JA Misewich, R. Martel, Ph. Avouris, JC Tsang, S. Heinze and J. Tersoff, "Electrically Induced Optical Emission from a Carbon Nanotube", Science 300, 783-785 (2003); WO 2004 / 086526A2 ; US 2004 / 0061422 A1; WO 2004/095591 A1).

drawing

The Mode of action and the advantages of the light source according to the invention are based on closer to the drawings shown. Show it:

1a and 1b : Arrangements known from the prior art for light-emitting, ambipolar field-effect transistors in a schematic representation

2a and 2 B FIG. 2: the variation of the local position of the recombination zone by the modulation of the gate voltage and / or the voltage between the two charge carrier injecting contacts in a schematic representation

3 FIG. 2 shows the variation of the lateral position of the recombination zone by the modulation of the gate voltage and / or the voltage between the two charge carrier injecting contacts of a light-emitting ambipolar field-effect transistor with aluminum contacts, an aluminum oxide insulator, an indium-tin oxide gate electrode and a active layer of the organic semiconductor α-sexithiophene

4a and 4b Arrangements of light-emitting, ambipolar field-effect transistors whose active layers have local (lateral) variations of the emission properties and in which the change of the lateral position of the recombination zone by the variation of the applied voltages enables a controlled modulation of the spectral light emission, in a schematic representation

5 : the chemical structure of three oliophenylenevinylene molecules: OPV3, OPV4 and OPV5

6 : the spectral distribution of the light emission of a light-emitting field-effect transistor structure whose active layer contains locally different concentrations of the organic semiconductors OPV3, OPV4 and OPV5, such that the light emission varies depending on the local position, with region 1 mainly from OPV3, region 2 mainly from OPV4 and region 3 mainly consists of OPV5

7 : the spectral distribution light emission of a light emitting Feldeffektransistorstruktur under high excitation intensity, wherein the active layer locally different concentration of the organic semiconductor OPV3, OPV4 and OPV5 contains, so that the light emission varies depending on the local position, wherein region 1 mainly from OPV3, region 2 mainly from OPV4 and region 3 mainly consists of OPV5.

8th : an arrangement of a light-emitting, ambipolar field-effect transistor whose active layer has local variations in the emission properties, additional electron and hole-transporting layers are introduced and in which the recombination zone controlled by variation of the applied voltages allows modulation of the spectral light emission, in a schematic representation embodiments

1a shows the schematic structure of a light-emitting, ambipolar field effect transistor. Such a transistor consists of a substrate ( 1 ) to which an active layer ( 2 ), which can transport both negative charge carriers (electrons) and positive charge carriers (holes). In principle, the active layer ( 2 ) also the function of the substrate ( 1 ) fill out. The active layer ( 2 ) preferably consists of a semiconducting material which may be amorphous, polycrystalline or monocrystalline. The layer ( 2 ) may also consist of a homogeneous material or a mixture of different materials. In this case, organic materials, inorganic materials, and also organic-inorganic hybrid materials come into consideration. Likewise, a doping and / or alloying of the semiconductive material with one or more substances is conceivable. Furthermore, it may be advantageous that the active layer ( 2 ) consists of a stack of layers or that their dimensionality is limited.

It is particularly advantageous if the active layer ( 2 ) by a cost-effective process such as solvent deposition (eg, spin-coating, sol-gel coating, chemical bath deposition) or a printing technique (eg, inkjet printing), "Transfer Printing") is produced.

Adjacent to the active layer ( 2 ) there are two electrical contacts ( 3 . 4 ). These contacts ( 3 . 4 ) can both be made of the same material, for example gold, advantageously the contacts ( 3 . 4 ) but designed so that one of the contacts ( 3 ) prefers electrons into the active layer ( 2 ) and the other contact ( 4 ) prefers holes in the active layer ( 2 ). These can be either ohmic contacts or Schottky contacts. Typical ohmic contact materials for electron injection have a low work function, such as aluminum, calcium, magnesium or alkali fluorides. WO 2004/066332 A2, WO 00/16361 and EP 1 369 938 A2 describe a variety of materials for electron injection into organic semiconductors. For hole injection, for example, high work function materials such as gold, indium tin oxide or titanium nitride can be used. It is immediately apparent to the person skilled in the art that an improvement in the injection properties for electrons or holes can be achieved by using suitable buffer layers or other suitable measures such as local doping profiles. The contacts ( 3 . 4 ) are in contact with the active layer ( 2 ).

An electrically insulating layer ( 5 ) disconnects the electrical contacts ( 3 . 4 ) as well as the active layer ( 2 ) from the conductive gate electrode ( 6 ). Ty typical insulation materials ( 5 ) are, for example, silica, alumina, polyimide or polymethylmethacrylate. Those skilled in the art will be aware of other organic and inorganic materials for use as gate insulators in field effect transistors. Likewise, it is conceivable that the insulating layer ( 5 ) consists of more than one material or of several layers. In addition, the interface between the insulating layer ( 5 ) and the active layer ( 2 ) may be modified by suitable buffer layers or self-assembled monolayers which improve the fabrication and / or the properties of the light-emitting transistor. Possible materials for the gate electrode ( 6 ) are metals or transparent, conductive oxides such as indium tin oxide or doped zinc oxide. Other materials are known to those skilled in the art.

It is particularly advantageous if the charge carrier injecting contacts ( 3 . 4 ) and / or the gate electrode ( 6 ) are produced by a low cost process such as "inkjet printing", "transfer printing" or "soft lithography." Other methods are known to those skilled in the art.

By applying a voltage to the gate electrode ( 6 ) are determined by the contacts ( 3 . 4 ) at the interface with the insulating layer ( 5 ) Charge carriers into the active layer ( 2 ). By applying a voltage between the two electrodes ( 3 and 4 ) can now be a simultaneous electron injection from electrode ( 3 ) and hole injection from electrode ( 4 ) be achieved. In addition, the voltage between the two electrodes ( 3 . 4 ) that the electrons move towards the electrode ( 4 ) and the holes towards the electrode ( 3 ) drift. At the point where the electrons and holes meet, recombination occurs. In the case of radiative recombination, the emission of light occurs, the emission spectrum being significantly affected by the composition of the active layer ( 2 ) is determined.

1b shows the inverse construction of a light emitting, ambipolar field effect transistor in comparison to in 1b shown structure. Here is a gate electrode ( 6 ) on a substrate ( 1 ) applied. In principle, however, the gate electrode ( 6 ) the task of the substrate ( 1 ) take. The insulating layer ( 5 ) is located between the gate electrode ( 6 ) and the active layer ( 2 ). The contacts ( 3 . 4 ) are in contact with the active layer ( 2 ). Simultaneous contact of the insulating layer ( 5 ), as in 1b is possible, but not necessarily required. The skilled person is immediately apparent that further modifications of the in the 1a and 1b shown structures for producing light-emitting, ambipolar Feldeftekttransistoren are possible.

Of the second basic idea of the invention lies in the position of the Recombination zone of a light emitting ambipolar field effect transistor locally by varying one or more applied voltages move.

How out 2a it can be seen that the impulse from the electron-injecting electrode ( 3 ) and the hole-injecting electrode ( 4 ) injected electrons and holes in the recombination zone ( 7 ) to each other. Light emission ( 8th ) is produced by radiative recombination of these injected electrons and holes. The lateral position of the recombination zone ( 7 ) can now be adjusted by modulating the gate voltage and the voltage between the two contacts ( 3 . 4 ), which varies in 2 B is shown.

3 shows the lateral variation of the recombination zone ( 7 ) of an ambipolar organic light-emitting field-effect transistor based on crystalline α-sexithiophene (see, for example, JH Schön, A. Dodabalapur, Ch. Kloc and B. Batlogg "A Light-Emitting Field-Effect Transistor" in Science 290, 963-965 (2000)) as active layer ( 2 ) as a function of the gate voltage at constant voltage between the hole injecting ( 4 ) and the electron-injecting electrode ( 3 ). By varying the gate voltage, the emission zone between the two contacts ( 3 . 4 ) are moved in a controlled manner. A similar lateral variation of the recombination zone ( 7 ) at constant gate voltage can be achieved by varying the voltage between the holes ( 4 ) and the electron-injecting electrode ( 3 ). Likewise, a lateral variation of the recombination zone ( 7 ) can be achieved by a modulation of both voltages. It is immediately apparent to the person skilled in the art that the modulation of both voltages causes both the intensity of the emitted radiation and the position of the recombination zone (FIG. 7 ) can be varied and controlled.

Similar results on the lateral variation of the recombination zone ( 7 ) have been achieved in one-dimensional structures (see M. Freitag, J. Chen, J. Tersoff, JC Tsang, Q. Fu, J. Liu and P. Avouris "Mobile Ambipolar Domain in Carbon Nanotube Infrared Emitters" in Physical Review Letters 93 (2004) 076803), an embodiment of the active layer ( 2 ) by a suitable one-dimensional structure, such as carbon nanotubes, semiconducting nanowires, individual molecules or even artificial structuring, is also quite conceivable.

The lateral position of the recombination zone ( 7 ) depends on the injection efficiency of the contacts ( 3 . 4 ) and the mobility of the charge carriers. In order to obtain a balanced injection, the ratio of electron to Hole mobility is approximately in the range of 1/100 to 100. Furthermore, absolute electron and hole mobilities of more than about 10 ^-2 cm ² / Vs are advantageous

A lateral, local Variation of the emission wavelength or the emission spectrum (color) can be in different ways be achieved. Here are just a few methods like the local Variation of doping and / or composition or local chemical functionalization. For the expert is immediate seen that a local Variation of the emission wavelength by further kinds as well as modifications or combinations of the cited Methods can be achieved and that different manufacturing methods For this Purpose can be used. The emission spectrum is not necessarily on the visible Limited range of light but can also be the infrared and ultraviolet region of the spectrum.

For organic light-emitting diodes, it is known, for example, to localize the emission wavelength by local diffusion of dye molecules into an organic semiconductor layer (see, for example, F. Pschenitzka and JC Sturm "Three-color organic light-emitting diodes patterned by masked dye diffusion" in Applied Physics Letters 74, 1913-1915 (1999), F. Pschenitzka and JC Sturm "Solvent-enhanced dye diffusion in polymer thin films for color tuning of organic light-emitting diodes" in Applied Physics Letters 78, 2584-2586 (2001) or WO 99 / 53529 A2). Furthermore, such a local variation in the emission wavelength of organic semiconductors can be achieved by various printing techniques such as ink jet printing, thermal transfer printing or other solvent-free printing techniques (see, for example, M. Stein, P. Peumans, JB Benzinger and SR Forrest "Direct, Mask and Solvent Free Printing of Molecular Organic Semiconductors "in Advanced Materials 16 1615 et seq. (2004)) The emission spectrum of a doped organic semiconductor layer can be directly influenced by the concentration and the structure of an emissive dopant, on the other hand, by changing the local dipole field be indirectly altered via the concentration and structure of a polar dopant (see, for example US 6,210,814 B1 and US 6,287,712 B1 ). Other methods of producing local variations in emission characteristics, particularly for inorganic materials, include co-evaporation of multiple materials, fabrication of heterostructures, superlattices or doping gradients, and the formation of alloys.

The local Variation of the emission wavelength The active layer can be either discrete or continuous respectively.

In the special case of coherent radiation sources, a variation of the emission wavelength can also be achieved via a modulation of the feedback mechanism, in particular of the resonator. If this is a local variation of the feedback mechanism, a local variation of the emission wavelength can also be achieved. Here are the expert in the various methods of feedback such as "Distributed Feedback", "Distributed Bragg Gratings", Fabry-Perot resonators, planar microcavities, "microring" resonators, "Microdisc" resonators, one- and two-dimensional photonic crystals or photonic quasicrystal resonators available. Further methods for changing the emission spectrum by changing the resonator structure are described in the patents US 6,091,197 . US 6,295,130 B1 revealed. Additionally lay the patents US 6,828,583 B2 and US 2004 / 0113098 A1 Possibilities of generating coherent radiation, in particular laser structures, on the basis of a light-emitting, ambipolar field effect transistor open.

The 4a and 4b show two structures of light-emitting, ambipolar field-effect transistors (see 1a and 1b ) whose active layer is modified. The active layer ( 2 ) of the component has a local variation of the emission wavelength or of the emission spectrum ( 9 . 10 . 11 ) on. There are schematically three regions of different emission properties ( 9 . 10 . 11 ). It is immediately apparent to the person skilled in the art that fewer or more than three regions of different emission properties are also conceivable. Likewise, a continuous variation of the emission characteristics can be generated and used.

The local position of the recombination zone ( 7 ) can be determined by the variation of the gate voltage and the voltage between the two contacts ( 3 . 4 ) can be varied in such a way that they are placed in one of the ranges for particular combinations of voltages ( 9 . 10 . 11 ) of the modified emission properties of the active layer ( 2 ) falls. Consequently, the variation of the gate voltage and the voltage between the two contacts ( 3 . 4 ) reaches a change in the emission spectrum of the light-emitting, ambipolar field effect transistor.

5 shows the chemical structure of three organic semiconductors, the oligophenylenevinylenes OPV3 (trimer), OPV4 (tetramer) and OPV (pentamer), which are used to prepare active layers ( 2 ) light-emitting, ambipolar Felddeffekttransistoren can be used.

6 shows the light emission ( 8th ) of the active layer ( 2 ) of a light-emitting ambipolar organic field-effect transistor based on the oligophenylenevinylenes OPV3, OPV4 and OPV5. The active layer ( 2 ) can be structured so that region 1 the layer mainly from OPV3, region 2 mainly from OPV4 and region 3 mainly consists of OPV5. Consequently, these regions correspond 1 to 3 the in 4a shown areas of different emission wavelengths ( 9 . 10 . 11 ). The gate electrode ( 6 ) consists of aluminum-doped zinc oxide, the insulating layer ( 5 ) of alumina and as an electron-injecting ( 3 ) and hole injecting contacts ( 4 ) aluminum or gold are used. The light emission ( 8th ) is thus due to the shift of the recombination ( 7 ) in the regions 1 . 2 respectively. 3 ( 9 . 10 . 11 ) varies. 7 shows the light emission ( 8th ) of the structure described at very high excitation power. In addition to the variation of the light emission ( 8th ) by the shift of the recombination zone ( 7 ) is a narrowing of the spectral bandwidth of light emissions ( 8th ), so that the generation of coherent radiation in such a structure is suggested.

A preferred application example is the formation of the active layer ( 2 ) with emission wavelengths ( 9 . 10 . 11 ) in the red, green and blue regions of the spectrum. In this way, a light source according to the invention can be used as the pixel of a "full-color display." The pixels of this display can be controlled by one or two voltages. 8th ) by both voltages is particularly advantageous because it allows simultaneous control of intensity and emission wavelength.

Another possibility of light-emitting, ambipolar field-effect transistors form one-dimensional structures, such as carbon nanotubes (see, for example, JA Misewich R. Martel, Ph. Avouris, JC Tsang, S. Heinze and J. Tersoff, "Electrically Induced Optical Emission from a Carbon Nanotube", Science 300, 783-785 (2003); WO 2004/030043 A2), therefore, further advantageous embodiments of the light source according to the invention can be a one-dimensional active layer ( 2 ). The active layer ( 2 In particular, on functionalized or modified carbon nanotubes, semiconductor nanowires (see, for example, Y. Huang, X. Duan, Y. Cu and CM Lieber "Gallium Nitride Nanowire Devices" in Nanoletters 2, 101-104 (2002); JC Johnson H.J. Choi, KP Knutsen, RD Schaller, P. Yang and RJ Saykally "Single Gallium Nitride Nanowire Lasers" in Nature Materials 1, 106-110 (2002); US 2003 / 0089899 A1; US 2004 / 0213307 A1) or organic molecular chains.

For example, it is known that carbon nanotubes can be locally doped, modified and functionalized (see, for example, H. Dai "Carbon Nanotubes: Synthesis, Integration, and Properties" in Accounts of Chemical Research 35, 1035-1044 (2002), M. Shim , NWS Kam, RJ Chen, Y. Li and H. Dai "Functionalization of Carbon Nanotubes for Biocompatibility and Biomolecular Recognition" in Nano Letters 2, 285-288 (2002); US 2004 / 071624; US 2005 / 045867).

Furthermore, the emission wavelength of carbon nanotubes depends on their diameter, so that a variation of the diameter, a variation of the emission wavelength can be achieved by a local variation of the diameter. Patent US 6,706,566 B2 For this purpose, for example, discloses a method for the controlled modification of the diameter of carbon nanotubes by applying a high voltage.

in the Case of semiconductor nanowires can a local variation of the emission characteristics as well by functionalization or by the preparation of heterostructures (See, for example, Y. Wu, R. Fan and P. Yang "Block-by-Block Growth of Single Crystalline Si / SiGe Superlattice Nanowires "in Nanoletters 2, 83-86 (2002)) be achieved.

In further advantageous embodiments of the light source according to the invention, the active layer ( 2 ) be composed of several layers. It is known to the skilled person from the prior art that the efficiency of light-emitting components can be markedly improved by incorporating buffer layers, blocking layers, transport layers or doped layers (see for example D. Braun "Semiconducting polymer LEDs" in Materials Today 32-39 (June 2002) for organic light-emitting diodes) In addition, it may be advantageous that a type of waveguide structure or "optical confinement" is achieved by additional layers or layer stacks.

For example, organic, light-emitting, ambipolar Feldeftekttransistoren with a double layer as the active layer ( 2 ), wherein one layer acts as an electron transporter and the other layer acts as a hole transporter (see C. Rost, DJ Gundlach, S. Karg and W. Riess "Ambipolar Organic Field Effect Transistor Based on Organic Heterostructure" in Applied Physics Letters 95, 5782-5784 (2004); C. Rost, S. Karg, W. Riess, MA Loi, M. Murgia and M. Muccini, "Light-emitting Ambipolar Organic Heterostructure Field-effect Transistors" in Synthetic Metals 146, 237 -241 (2004)). 8th looks a schematic structure of an advantageous development of in 4a illustrated color changeable light source le. The active layer ( 2 ) is passed through a hole-transporting layer ( 12 ) and an electron-transporting layer ( 13 ) expanded. The charge carrier injecting contacts ( 3 . 4 ) are arranged so that the hole-injecting contact ( 4 ) in contact with the hole-transporting layer ( 12 ) and the electron-injecting contact ( 3 ) in contact with the electron-transporting layer ( 13 ). By choosing suitable materials and layer thicknesses for the charge carrier transporting layers ( 12 . 13 ), the efficiency of the light source can be increased. It will be apparent to those skilled in the art that supplementing the active layer ( 2 ) by only one charge carrier transporting layer ( 12 or 13 ) Also an advantageous development of in 4a can represent illustrated arrangement. Likewise, it is possible for a person skilled in the art by the prior art in the field of light-emitting diodes by inserting further layers in 8th shown arrangement to improve. For this purpose, the region of the radiative recombination can be constructed, for example, by a plurality of recombination layers.

It It is understood that the foregoing descriptions are illustrative only for the Invention are. Various alternatives and modifications can be made a person skilled in the art without departing from the invention considered become. Accordingly, the present invention is intended to cover all such alternatives, Includes modifications and variations that fall within the scope of the appended claims.

Claims (21)

Electrically operated component consisting of a substrate ( 1 ), an active layer ( 2 ), which can transport both negative charge carriers, electrons, as well as positive charge carriers, holes, one in contact with the active layer ( 2 ) electron injecting contact ( 3 ), in contact with the active layer ( 2 ) hole-injecting contact ( 4 ) and a gate electrode ( 6 ) through an electrically insulating layer ( 5 ) of the active layer ( 2 ) separated by application to a voltage between the gate electrode ( 6 ) and one of the carrier injecting contacts ( 3 . 4 ) and the application of a voltage between the two charge carrier injecting contacts ( 3 . 4 ) a light emission ( 8th ), characterized in that the active layer ( 2 ) a locally laterally varying emission wavelength ( 9 . 10 . 11 ) and that by the variation of the applied voltages to the gate electrode ( 6 ) and / or the charge carrier injecting contacts ( 3 . 4 ) the position of the recombination zone ( 7 ) is varied locally and that thereby a controlled variation of the emission spectrum of the light emission ( 8th ) he follows. Electrically operated component according to claim 1, characterized in that solely by the variation of the to the gate electrode ( 6 ) a controlled variation of the emission spectrum of the light emission ( 8th ) he follows. Electrically operated component according to claim 1, characterized in that solely by the variation of the charge carrier injecting contacts ( 3 . 4 ) a controlled variation of the emission spectrum of the light emission ( 8th ) he follows. Electrically operated component after one or several of the claims 1 to 3, characterized in that controlled red, green and blue Light can be emitted. Electrically operated component according to one or more of claims 1 to 3, characterized in that the light emission ( 8th ) in the infrared region of the spectrum. Electrically operated component according to one or more of claims 1 to 5, characterized in that the active layer ( 2 ) contains an organic semiconductor. Electrically operated component according to one or more of claims 1 to 6, characterized in that the active layer ( 2 ) contains a plurality of organic semiconductors. Electrically operated component according to one or more of claims 1 to 7, characterized in that the active layer ( 2 ) has a local variation of the chemical composition. Electrically operated component according to one or more of claims 1 to 7, characterized in that the active layer ( 2 ) is locally doped. Electrically operated component according to claim 8, characterized in that the active layer ( 2 ) has lateral variations of one or more dopants. Electrically operated component according to one or more of Claims 1 to 10, characterized in that the active layer ( 2 ) further hole-transporting ( 12 ) and electron-transporting layers ( 13 ) having. Electrically operated component according to one or more of claims 1 to 11, characterized in that the active layer ( 2 ) has one or more additional recombination layers. Electrically operated component according to one or more of claims 1 to 12, characterized in that the light emission ( 8th ) is coherent. Electrically operated component after one or several of the claims 1 to 13, characterized in that the component one or more having optical resonator structures. Electrically operated component according to one or more of Claims 1 to 14, characterized in that the active layer ( 2 ) is executed one-dimensionally. Electrically operated component according to claim 15, characterized in that the one-dimensional active layer ( 2 ) consists of carbon nanotubes or semiconductor nanowires. Electrically operated component according to claim 16, characterized in that the carbon nanotubes or semiconductor nanowires of the one-dimensional active layer ( 2 ) are chemically doped, modified and / or functionalized locally. Electrically operated component according to one or more of Claims 1 to 17, characterized in that the substrate ( 1 ) is mechanically flexible. Electrically operated component according to one or more of claims 1 to 18, characterized in that the active layer ( 2 ) is separated from one or more solvents. Electrically operated component according to one or more of claims 1 to 19, characterized in that the active layer ( 2 ) is produced by a printing process. Electrically operated component according to one or more of claims 1 to 20, characterized in that the charge carrier injecting contacts ( 3 . 4 ) and / or the gate electrode ( 6 ) are produced by a printing process.