DE19843479A1 - Semiconducting component - Google Patents

Semiconducting component

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Publication number
DE19843479A1
DE19843479A1 DE19843479A DE19843479A DE19843479A1 DE 19843479 A1 DE19843479 A1 DE 19843479A1 DE 19843479 A DE19843479 A DE 19843479A DE 19843479 A DE19843479 A DE 19843479A DE 19843479 A1 DE19843479 A1 DE 19843479A1
Authority
DE
Germany
Prior art keywords
plate
heat
housing
conducting plate
semiconductor chip
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19843479A
Other languages
German (de)
Inventor
Jens Pohl
Simon Muff
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19843479A priority Critical patent/DE19843479A1/en
Publication of DE19843479A1 publication Critical patent/DE19843479A1/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49568—Lead-frames or other flat leads specifically adapted to facilitate heat dissipation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details

Abstract

The component has a semiconducting chip (5) on a heat conducting plate (6) and several connecting elements (4), each with one end (10) leading to the chip and with an electrical connection to the chip or to the heat conducting plate. The connecting elements protrude through an enclosing casing (1) which is partly formed by the heat conducting plate. One connecting element is connected to the plate at the end leading to the chip. The plate has a cooling body.

Description

Die Erfindung betrifft ein Halbleiterbauelement gemäß Patent­ anspruch 1.The invention relates to a semiconductor component according to the patent claim 1.

Mit steigender Leistungsfähigkeit der Halbleiterbauelemente wächst das Problem, daß innerhalb des Gehäuses zunehmend Ver­ lustwärme entsteht, die abgeführt werden muß. Übliche Baufor­ men von Halbleiterbauelementen weisen Zuführelemente, soge­ nannte Leads auf, die von außerhalb in das Gehäuse des Haupt­ bauelementes in die Nähe des Halbleiterchips herangeführt sind, und mit diesem elektrisch kontaktiert sind. Der Halb­ leiterchip wiederum ist entweder direkt mit diesen sogenann­ ten Leads verbunden oder auf einer Trageplatte angeordnet. Weiterhin besteht des Gehäuse hinterer Bauform häufig aus ei­ ner Kunststoffpreßmasse über die die entstehende Wärme nicht ausreichend abgeführt werden kann. Nunmehr ist oftmals zu­ sätzlich vorgesehen, daß die vom Halbleiterchip erzeugte Wär­ me über die Leads oder über das Trageelement abgeführt wird. Hierbei tritt die Schwierigkeit auf, die Rückseite des Trage­ elemetes nachträglich galvanisch zu bearbeiten.With increasing performance of the semiconductor components the problem grows that Ver increasingly within the housing lust heat arises, which must be dissipated. Usual construction Men of semiconductor devices have feed elements, so-called called leads on from outside into the main casing component brought close to the semiconductor chip are, and are electrically contacted with this. The half conductor chip in turn is either directly with these so-called ten leads connected or arranged on a support plate. Furthermore, the rear design housing often consists of egg ner plastic molding compound about the heat generated can be dissipated sufficiently. Now is often too additionally provided that the heat generated by the semiconductor chip me is dissipated via the leads or the support element. The difficulty arises here, the back of the stretcher Subsequent galvanic processing of elemetes.

Daher liegt der Erfindung zugrunde, ein Halbleiterbauelement vorzusehen, bei dem eine Trageplatte zur Wärmeabfuhr vorgese­ hen ist, die nachträglich galvanisch bearbeitbar ist.The invention is therefore based on a semiconductor component to provide, in which a support plate for heat dissipation hen is that can be subsequently electroplated.

Diese Aufgabe wird erfindungsgemäß mit den im Patentanspruch 1 angegebenen Maßnahmen gelöst.This object is achieved with the in claim 1 specified measures solved.

Insbesondere das Vorsehen des Halbleiterchip auf einer wärme­ leitenden Platte und durch die zusätzliche Maßnahme, daß ein Zuführelement das mit der wärmeleitenden Platte in Berührung steht, wird die nachträgliche galvanische Bearbeitung leicht ermöglicht. In particular, the provision of the semiconductor chip on a heat conductive plate and by the additional measure that a Feeding element in contact with the heat-conducting plate stands, the subsequent galvanic processing is easy enables.  

Weitere vorteilhafte Ausführungen sind in den Unteransprüchen angegeben.Further advantageous designs are in the subclaims specified.

Dadurch, daß das Zuführelement in einer Ausnehmung der wärme­ leitenden Platte eingreift ist die Übergangsfläche zwischen der Platte und dem Zuführelement für eine verbesserte elek­ trische Kontaktierung vergrößert. Durch Vorsehen eines Kühl­ körpers ist weiterhin das Vermögen Wärme abzuführen insbeson­ dere dadurch, daß der Kühlkörper mittels eines Verbindungse­ lementes an das Trageteil angeschweißt ist, vergrößert.The fact that the feed element in a recess of the heat engages conductive plate is the transition surface between the plate and the feed element for improved elec trical contact increased. By providing a cool body is still the ability to dissipate heat in particular the fact that the heat sink by means of a connection lementes is welded to the support member, enlarged.

Nachfolgend wir die Erfindung im einzelnen unter Bezugnahme auf die dazugehörenden Zeichnungen beschrieben.In the following we refer to the invention in detail described in the accompanying drawings.

Es zeigen:Show it:

Fig. 1 ein typisches modernes Halbleiterbauelemente­ gehäuse in Perspektivansicht, Fig. 1, a typical modern semiconductor devices housing in perspective view,

Fig. 2 das in Fig. 1 gezeigte Gehäuse in zwei Schnitt­ ansichten, Fig. 2, the housing shown in Fig. 1 in two sectional views,

Fig. 3 das in Fig. 1 dargestellte Gehäuse in zwei Schnittansichten, in erfindungsgemäßer Ausgabehalterung Fig. 3, the housing shown in Fig. 1 in two sectional views, in the output holder according to the invention

Fig. 4A bis 4C in Ausschnittsvergrößerungen Einzelheiten weiterer erfindungsgemäßer Ausgestaltungen, FIGS. 4A to 4C in detail enlargements details of further embodiments according to the invention,

Fig. 5 eine Ausschnittvergrößerung einer Weiterbildung der erfindungsgemäßen Ausge­ staltungen und Fig. 5 shows an enlarged detail of a further development of the events according to the invention

Fig. 6 ein Verbindungselement gemäß einer weiteren erfindungsgemäßen Ausgabenhalterung. Fig. 6 shows a connecting element according to a further output support according to the invention.

In Fig. 1 ist eine bisher weitgehend bekannte Gehäuseform dargestellt, wie sie insbesondere für Halbleiterspeicherbau­ steine verwendet wird. Das Gehäuse 1 ist beispielsweise aus Kunststoff-Preßmasse hergestellt, wobei bei der hier darge­ stellten aufrecht stehenden Gehäuseform auf einer Seite An­ schlußelemente 4 heraus geführt sind, die der Spannungsver­ sorgung und/oder dem Zuführen beziehungsweise Abführen von Daten dienen. An der Hauptfläche des Bauelementes 1, die ge­ mäß Fig. 1 als Rückseite dargestellt ist, ist eine Wärmesenke beziehungsweise Kühlkörper 2 am Bauelement angeordnet, wobei die Wärmesenke 2 Anschlußstifte aufweist, die in einer nicht dargestellten Trägerplatte, beziehungsweise Halterung zur me­ chanischen Stabilisierung des Bauelementes beziehungsweise zur Weiterleitung der anfallenden Wärme, eingeführt werden.In Fig. 1 a previously largely known housing shape is shown, such as is used in particular for semiconductor memory devices. The housing 1 is made, for example, of plastic molding compound, in the case of the upright housing shape shown here on one side of the circuit elements 4 which are used to supply voltage and / or to supply or discharge data. On the main surface of the component 1 , which is shown ge as shown in FIG. 1 as the rear, a heat sink or heat sink 2 is arranged on the component, the heat sink having 2 connecting pins in a carrier plate, not shown, or holder for me mechanical stabilization of the component or to transfer the heat generated.

In Fig. 2 ist das in Fig. 1 dargestellte Bauteil in einem üb­ lichen Aufbau schnittbildlich dargestellt. Wie in Fig. 2 zu sehen ist, umgibt das in Fig. 1 dargestellt Gehäuse einen Halbleiterchip 5, der auf einer wärmeleitenden Platte 6 ange­ ordnet ist. Weiterhin sind die Anschlußelemente 4, die gemäß Fig. 1 aus dem Gehäuse heraus geführt sind, bis in die Nähe zugeordneter Anschlußelemente beziehungsweise Kontaktpads 7 des Halbleiterchips 5 heran geführt und mittels Drahtbondver­ bindungen 8 elektrisch leitend verbunden. Wie der Darstellung gemäß Fig. 2 weiterhin zu entnehmen ist, stellt die Platte 6 ein Teil der Gehäuseoberfläche dar und liegt somit zur Abfüh­ rung von Wärme nach außen frei. An dieser Platte 6 ist nun­ mehr der Kühlkörper 2 zum Weiterleiten der beim Betrieb des Bauelementes anfallenden Wärme angeordnet.In Fig. 2 the component shown in Fig. 1 is shown in sectional view in a usual structure. As seen in Figure 2. That shown in Fig. 1 housing surrounds a semiconductor chip 5, which is on a heat conducting plate 6 is arranged. Furthermore, the connecting elements 4, as shown in FIG. 1 are led out of the housing to the vicinity of associated connecting elements or contact pads 7 are of the semiconductor chip 5 and performed by means of compounds Drahtbondver 8 electrically conductively connected zoom. As can further be seen from the illustration according to FIG. 2, the plate 6 represents part of the housing surface and is therefore exposed to heat for removal from the outside. On this plate 6 , the heat sink 2 is now arranged to transmit the heat generated during operation of the component.

Fig. 3 zeigt nunmehr ein erfindungsgemäßes Ausführungsbei­ spiel, das nach außen die gleiche Gehäuseform aufweist, wie das in Fig. 1 dargestellte Bauelement. Gemäß Fig. 3 sind einige Anschlußelemente 4' breiter ausgebildet als andere Anschluße­ lemente 4. Diese dienen dem Zuführen elektrischer Energie zur wärmeleitenden Platte 6. Sie können ebenfalls mit zugeordne­ ten Kontaktpads elektrisch verbunden werden, um Teile des Halbleiterchip 5 mit dem gleichen Potential zu versehen. Überhaupt geschieht die elektrische Kontaktierung der An­ schlußelemente 4 bei dem in Fig. 3 dargestellten Ausführungs­ beispiel ähnlich wie bezüglich Fig. 2 zuvor beschrieben und in Fig. 2 dargestellt ist. Fig. 3 shows a game according to the invention Ausführungsbei, which has the same housing shape on the outside as the component shown in Fig. 1. According to Fig. 3, some connecting elements 4 'wider than other ELEMENTS CONNECTION 4. These serve to supply electrical energy to the heat-conducting plate 6 . They can also be electrically connected to assigned contact pads in order to provide parts of the semiconductor chip 5 with the same potential. In general, the electrical contacting of the connection elements 4 takes place in the embodiment shown in FIG. 3, for example similar to that described with reference to FIG. 2 and shown in FIG. 2.

Weiterhin ist in Fig. 3 zusätzlich ein Mold-Anker 9 darge­ stellt, der der mechanischen Stabilisierung der Anschlußele­ mente 4 bzw. 4' in einer Lead-Frame-Anordnung für den Monta­ geprozeß dient.Furthermore, in Fig. 3 is additionally a mold anchor 9 Darge provides the mechanical stabilization of the elements 4 or 4 'in a lead frame arrangement for the mounting process for the assembly elements.

Gemäß Fig. 4A bis 4C sind unterschiedliche Ausgestaltungen der elektrischen Verbindung zwischen einem Anschlußelement 4' und der wärmeleitenden Platte 6 dargestellt. Hierbei ist deutlich erkennbar, daß diese Anschlußelemente 4" in Richtung der wär­ meleitenden Platte 6 in der Nähe des Halbleiterchips 5 abge­ bogen sind, um die Trageplatte 6 im fertigen Halbleiterbau­ element zu berühren. Dabei kann, wie in Fig. 4B dargestellt ist, an der Stelle, an der ein Ende des Anschlußelementes 4' die Platte 6 berührt, diese mit einer speziellen Auflage 14 versehen ist, um einen besseren Kontakt herzustellen.Referring to FIG. 4A to 4C different embodiments of the electrical connection between a connecting element 4 'and the heat conductive plate 6 are shown. It can be clearly seen that these connection elements 4 "are bent in the direction of the heat-conducting plate 6 in the vicinity of the semiconductor chip 5 in order to touch the support plate 6 in the finished semiconductor device. Thereby, as shown in FIG. 4B, can the place where one end of the connecting element 4 'touches the plate 6 , this is provided with a special support 14 in order to make better contact.

Gemäß Fig. 4A bis 4C ist ebenfalls die Preßmassenform 15 dar­ gestellt, in die die Platte 6 zusammen mit dem Halbleiterchip 5 und dem Anschlußelement 4' eingelegt wird, so daß die Plat­ te 6 nach fertiger Montage Teil der Gehäuseoberfläche ist. Wie gemäß Fig. 4C dargestellt ist, kann es nunmehr vorteilhaft sein, daß wärmeleitende Anschlußelement 4' derart abzubiegen, daß ein Zwischenbereich die der Trageplatte 6 gegenüberlie­ gende Seite der Preßmassenform 15 im geschlossenen Zustand vor dem Einführen der Preßmasse berührt. Somit wird das Ende 10 des Anschlußelementes 4' gegen die Platte 6 drückt. Durch diesen Druck kommt es zu einem weiter verbesserten Kontakt zwischen der Platte 6 und dem Anschlußelement 4'.According to FIGS. 4A to 4C, the Preßmassenform 15 is also provided, in which the plate 6 together with the semiconductor chip 5 and the connecting element is inserted 4 ', so that the Plat te 6 after finished mounting part of the housing surface. As shown in FIG. 4C, it can now be advantageous to bend the heat-conducting connecting element 4 'in such a way that an intermediate region touches the side of the molding compound mold 15 opposite the supporting plate 6 in the closed state before the molding compound is introduced. Thus, the end 10 of the connecting element 4 'is pressed against the plate 6 . This pressure leads to a further improved contact between the plate 6 and the connecting element 4 '.

Um den zuvor beschriebenen Effekt weiter zu verstärken, kann, wie in Fig. 5 dargestellt ist, in der Platte 6 ebenfalls eine Ausnehmung 13 ausgebildet sein, die der Form des Endes 10 des Anschlußelementes 4' entspricht. Auf diese Art und Weise er­ gibt sich eine große Kontaktfläche zwischen der Platte 6 und dem Ende 10 des Anschlußelementes 4'. In order to further reinforce the previously described effect, as is shown in FIG. 5, a recess 13 can also be formed in the plate 6 , which corresponds to the shape of the end 10 of the connection element 4 '. In this way, there is a large contact area between the plate 6 and the end 10 of the connecting element 4 '.

Um den gemäß in Fig. 1 und 2 dargestellten Kühlkörper 2 fest und mit einem guten Wärmeübergang versehen, mit der Platte 6 zu verbinden, kann der Kühlkörper 2, wie in Fig. 6 darge­ stellt ist, Öffnungen aufweisen, die mit Anschlußzungen 11 versehen sind. Ist der Kühlkörper 2 nunmehr auf die Platte 6 aufgelegt, so können in Bereich dieser Zungen 11 leicht Schweißverbindungen hergestellt werden, um, wie zuvor gefor­ dert, eine feste und gut Wärme leitende Verbindung zwischen Kühlkörper 2 und der Platte 6 zu erzeugen. Diese mit den An­ schlußzungen 11 versehenen Öffnungen können dabei in ge­ wünschter Weise auf der Fläche des Kühlkörpers verteilt sein.To the heat sink shown according to Fig. 1 and 2 2-resistant and provided with a good heat transfer, to be connected to the plate 6, the heat sink 2 as shown in Fig. 6 can Darge provides is, have openings which are provided with connecting tongues 11 . If the heat sink 2 is now placed on the plate 6 , welded connections can easily be made in the area of these tongues 11 in order, as previously required, to produce a firm and good heat-conducting connection between the heat sink 2 and the plate 6 . These with the circuit tongues 11 provided openings can be distributed in the desired manner on the surface of the heat sink.

Claims (4)

1. Halbleiterbauelement mit einem Halbleiter-Chip (5), der auf einer wärmeleitenden Platte (6) angeordnet ist und mehre­ ren Zuführelementen (4), die mit jeweils einem Ende 10 an den Halbleiterchip (5) herangeführt sind und mit dem Halbleiter­ chip (5) und/oder der wärmeleitenden Platte (6) eine elektri­ sche Verbindung (8) aufweisen, wobei die Anordnung von einem Gehäuse (1) umgeben ist, aus dem die Zuführelemente (4) her­ ausragen und das teilweise von der wärmeleitenden Platte ge­ bildet ist und wobei, wenn ein Zuführelement (4) mit der wär­ meleitenden Platte (6) verbunden ist, am Ende (10), das an den Halbleiterchip (5) herangeführt ist, die wärmeleitende Platte (6) berührt, die einen Teil des Gehäuses.1. Semiconductor component with a semiconductor chip ( 5 ), which is arranged on a heat-conducting plate ( 6 ) and several ren supply elements ( 4 ), which are each brought up to the semiconductor chip ( 5 ) with one end 10 and with the semiconductor chip ( 5 ) and / or the heat-conducting plate ( 6 ) have an electrical connection ( 8 ), the arrangement being surrounded by a housing ( 1 ) from which the feed elements ( 4 ) protrude and which forms part of the heat-conducting plate and wherein, when a feeding member (4) is connected to the would meleitenden plate (6), at the end (10), which is introduced to the semiconductor chip (5) contacts the heat conductive plate (6), the part of the housing . 2. Halbleiterbauelement nach Anspruch 1, bei dem das die wär­ meleitende Platte (6) berührende Zuführelement (4) in eine Ausnehmung (13) der wärmeleitenden Platte (6) eingreift.2. A semiconductor device according to claim 1, wherein the engaging the would meleitende plate (6) contacting feed element (4) in a recess (13) of the heat-conducting plate (6). 3. Halbleiterbauelement nach Anspruch 2, bei dem die wärme­ leitende Platte (6), dort wo sie Teil des Gehäuses ist, einen Kühlkörper (2) ausweist.3. A semiconductor device according to claim 2, wherein the heat-conducting plate ( 6 ), where it is part of the housing, has a heat sink ( 2 ). 4. Halbleiterbauelement nach Anspruch 3, bei dem der Kühlkör­ per (2) mittels eines Verbindungselementes (11) an die Platte (6) im Bereich der Gehäuseoberfläche angeschweißt ist.4. The semiconductor component according to claim 3, wherein the heat sink is welded by ( 2 ) by means of a connecting element ( 11 ) to the plate ( 6 ) in the region of the housing surface.
DE19843479A 1998-09-22 1998-09-22 Semiconducting component Ceased DE19843479A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2008511A1 (en) * 1969-03-01 1970-09-10 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Semiconductor component
US5444304A (en) * 1992-08-24 1995-08-22 Hitachi, Ltd. Semiconductor device having a radiating part
DE19514375A1 (en) * 1994-04-19 1995-10-26 Mitsubishi Electric Corp Semiconductor device, method for its production and semiconductor module
DE19716674A1 (en) * 1997-04-21 1998-08-20 Siemens Ag Semiconductor component with two or more chips for multiple switch
DE19740946A1 (en) * 1997-09-17 1998-11-19 Siemens Ag Semiconductor chip and housing arrangement for memory device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2008511A1 (en) * 1969-03-01 1970-09-10 N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) Semiconductor component
US5444304A (en) * 1992-08-24 1995-08-22 Hitachi, Ltd. Semiconductor device having a radiating part
DE19514375A1 (en) * 1994-04-19 1995-10-26 Mitsubishi Electric Corp Semiconductor device, method for its production and semiconductor module
DE19716674A1 (en) * 1997-04-21 1998-08-20 Siemens Ag Semiconductor component with two or more chips for multiple switch
DE19740946A1 (en) * 1997-09-17 1998-11-19 Siemens Ag Semiconductor chip and housing arrangement for memory device

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP 02-123759 A. In: Pat.Abstr. of JP, E-958 *

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