DE19828190A1 - Terminal arrangement - Google Patents

Terminal arrangement

Info

Publication number
DE19828190A1
DE19828190A1 DE19828190A DE19828190A DE19828190A1 DE 19828190 A1 DE19828190 A1 DE 19828190A1 DE 19828190 A DE19828190 A DE 19828190A DE 19828190 A DE19828190 A DE 19828190A DE 19828190 A1 DE19828190 A1 DE 19828190A1
Authority
DE
Germany
Prior art keywords
contact surfaces
bonding
aluminum
wires
lead frame
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19828190A
Other languages
German (de)
Inventor
Gottfried Beer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19828190A priority Critical patent/DE19828190A1/en
Publication of DE19828190A1 publication Critical patent/DE19828190A1/en
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49517—Additional leads
    • H01L23/4952—Additional leads the additional leads being a bump or a wire
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05555—Shape in top view being circular or elliptic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48617—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48624—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48655—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48738—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48755—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4901—Structure
    • H01L2224/4903—Connectors having different sizes, e.g. different diameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/4905—Shape
    • H01L2224/49051—Connectors having different shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399—Material
    • H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85455—Nickel (Ni) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Wire Bonding (AREA)

Abstract

The terminal or connector arrangement has a metallic conductor frame (1) with several contact surfaces (5) which connect gold terminal wires (12) by bonds which lead to signal and/or control terminal contacts (14) of an electronic component (8). The contact surfaces (5) are coated with a material (10) which is suitable both for bonding gold connector wires (12) and also for bonding aluminium connector wires (12'). At least one connection wire leading to an active connector contact is an aluminium terminal wire. Preferably the contact surfaces (5) are coated with aluminium and a nickel containing compound. The aluminium (10) may be applied to the contact surfaces by roller plating.

Description

Die Erfindung liegt auf dem Gebiet der Massenfertigung von Halbleiterbauelementen, bei denen üblicherweise ein Funktion­ selement oder elektronisches Bauteil (beispielsweise ein in­ tegrierter Schaltkreis (IC)) zur externen Kontaktierung mit einem Leiterrahmen verbunden wird. Als Bezeichnung für solche Leiterrahmen hat sich in der Fachterminologie der Begriff "Leadframe" durchgesetzt. Ein Leadframe kann eine Auflage- oder Montagefläche haben, auf der das Bauteil mittels bekann­ ter Montage- und Klebetechniken (sog. "Diebonden") befestigt wird. Der Leadframe bildet mit äußeren Leitungsenden ("outer leads") Anschlußkontakte zur späteren externen Kontaktierung das Bauteils. Innere korrespondierende Leiterenden ("inner leads") weisen Kontaktstellen (sog. "contact pads") auf, mit denen elektrische Anschlußkontakte des Bauteils über Verbin­ dungsdrähte ("Bonddrähte") kontaktiert sind. Dazu werden üb­ licherweise Drahtbondverfahren angewendet.The invention is in the field of mass production of Semiconductor devices, which usually have a function selement or electronic component (for example an in integrated circuit (IC)) for external contact with a lead frame is connected. As a term for such Lead frame has become the term in technical terminology "Leadframe" enforced. A leadframe can be a circulation or Have a mounting surface on which the component can be ter mounting and adhesive techniques (so-called "Diebonden") attached becomes. The leadframe forms with outer line ends ("outer leads ") Connection contacts for later external contacting the component. Inner corresponding conductor ends ("inner leads ") have contact points (so-called" contact pads ") with which electrical connection contacts of the component via connec extension wires ("bond wires") are contacted. To do this, wire bonding process applied.

Die Erfindung betrifft eine Anschlußanordnung mit einem me­ tallischen Leiterrahmen mit mehreren Kontaktflächen, mit de­ nen Gold-Anschlußdrähte durch Bonden verbunden sind, die zu Signal- und/oder Steuer-Anschlußkontakten eines elektroni­ schen Bauteils führen.The invention relates to a connection arrangement with a me metallic lead frame with multiple contact surfaces, with de NEN gold leads are bonded by bonding to Signal and / or control connection contacts of an electronic lead component.

Eine derartige, aus der EP-0 513 521 A2 bekannte Anschluß­ anordnung umfaßt einen Leiterrahmen aus einer Kupferlegierung oder aus einem mit einer Kupferlegierung beschichtetem Me­ tall. Ein von dem Leiterrahmen getragenes Bauteil ist mit diesem verbunden, indem Golddrähte (Bonddrähte) von Anschluß­ kontakten des Bauteils zu Kontaktflächen auf den "inner leads" des Leiterrahmens führen. Such a connection, known from EP-0 513 521 A2 Arrangement comprises a lead frame made of a copper alloy or from a Me coated with a copper alloy tall. A component carried by the lead frame is included this connected by connecting gold wires (bond wires) from connector contacts of the component to contact surfaces on the "inner leads "of the lead frame.  

Diese Verbindungen können insbesondere bei Leistungs-Halb­ leiterbauteilen, bei denen erhebliche elektrische Leistungen über die Bonddrähte zu übertragen sind, zur Problemen führen. Bei der Verwendung von Gold-Bonddrähten sind als Leistungszu­ leitungen vergleichsweise dicke und ggf. mehrere parallele Gold-Bonddrähte vorzusehen. Dabei muß aus prozeßtechnischen Gründen der gleiche Bonddraht - d. h. auch der gleiche Gold- Draht-Durchmesser - auch für mit wesentlich geringeren Lei­ stungen beaufschlagte Steuer- oder Signalleitungen verwendet werden. Dies stellt einen teueren Kompromiß bei insgesamt nur unbefriedigender Leistungsfähigkeit der Verbindung dar.These connections can be used especially at power half conductor components with significant electrical power over which are to be transferred, lead to problems. When using gold bond wires are considered as performance Cables comparatively thick and possibly several parallel ones Provide gold bond wires. It must be from a process engineering point of view Establish the same bond wire - d. H. also the same gold Wire diameter - even for those with much lower lei used control or signal lines become. This represents an expensive compromise in total only unsatisfactory performance of the connection.

Eine Alternative könnte in der Verwendung von Aluminium- Bonddrähten auf mit Nickel oder Nickel-Phosphor (Ni/NiP) be­ schichteten Leiterrahmen bestehen. Dabei sind für mit hoher Leistung beaufschlagte Verbindungen relativ dicke Aluminium- Bonddrähte (von beispielsweise 125 bis 650 µm) vorzusehen, wo­ bei ggf. auch hier mehrere parallele Verbindungen erforder­ lich sind. Für die Verbindungen der Steuer- oder Signallei­ tungen müßten vergleichsweise dünne Aluminium-Bonddrähte (mit einem Durchmesser von weniger als 125 µm) verwendet werden. Dazu muß aber ein Aluminium-Dünndraht-Bondprozeß eingesetzt werden, der gegenüber bekannten Gold-Nailhead-Bondprozessen teuerer ist und größere Bondflächen erfordert. Ein weiteres Problem hinsichtlich der Variabilität beim Einsatz verschie­ dener Bondprozesse bei demselben Leiterrahmen besteht nämlich darin, daß Aluminium nur sehr eingeschränkt auf Silber­ beschichteten Trägerrahmen bondbar ist, während Gold sich nur sehr bedingt bzw. schwierig auf mit Nickel/Nickel-Phosphor bzw. mit reinem Kupfer beschichteten Leiterrahmen bonden läßt.An alternative could be in the use of aluminum Bond wires on with nickel or nickel phosphorus (Ni / NiP) layered lead frames exist. Are for high Power Connections Relatively Thick Aluminum To provide bond wires (for example 125 to 650 microns) where if several parallel connections may also be required here are. For the connections of the control or signal line comparatively thin aluminum bonding wires (with a diameter of less than 125 µm) can be used. However, an aluminum-thin wire bonding process must be used for this compared to known gold nailhead bonding processes is more expensive and requires larger bond areas. Another one Problem with variability when using various whose bonding processes exist with the same lead frame in that aluminum is very limited to silver coated carrier frame is bondable, while gold only very limited or difficult with nickel / nickel phosphorus or bond lead frames coated with pure copper leaves.

Die Aufgabe der Erfindung besteht daher in der Schaffung ei­ ner Anschlußanordnung, die für Hochleistungs-Bauteile eine kostenoptimierte Gestaltung erlaubt. The object of the invention is therefore to create egg ner connection arrangement, the one for high-performance components Cost-optimized design allowed.  

Diese Aufgabe wird erfindungsgemäß bei einer Anschlußanord­ nung der eingangs genannten Art dadurch gelöst, daß die Kon­ taktflächen mit einem Material beschichtet sind, das sowohl zum Bonden von Gold-Anschlußdrähten als auch zum Bonden von Aluminium-Anschlußdrähten geeignet ist, und daß zumindest ein zu einem Leistungs-Anschlußkontakt führender Anschlußdraht ein Aluminium-Anschlußdraht ist.This object is inventively in a connection arrangement solution of the type mentioned in that the Kon tact surfaces are coated with a material that both for bonding gold leads as well as for bonding Aluminum connecting wires is suitable, and that at least one Lead leading to a power connection contact is an aluminum lead wire.

Ein wesentlicher Vorteil der erfindungsgemäßen Anordnung be­ steht darin, daß die Kontaktflächen-Beschichtung wahlweise sowohl ein Bonden von Aluminium-Drähten als auch ein Bonden von Gold-Drähten erlaubt. Der Leiterrahmen ist daher je nach spezifischen Leistungsanforderungen ggf. mit unterschiedli­ chen Bonddrähten kontaktierbar. Dies ermöglicht, Steuer- oder Signalleitungen weiterhin unter Verwendung von Gold-Bond­ drähten zu realisieren, deren Bonden vergleichsweise preis­ wert ist.A major advantage of the arrangement according to the invention be is that the contact surface coating is optional both aluminum wire bonding and bonding allowed by gold wires. The lead frame is therefore different specific performance requirements with different Chen bond wires contactable. This enables tax or Signal lines continue to use gold bond to realize wires whose bonding is comparatively expensive is worth.

Bevorzugt ist (als "preplated lead frame") zur Beschichtung Aluminium oder eine nickelhaltige Verbindung, beispielsweise Nickel-Gold (NiAu), Nickel-Palladium (NiPd), Nickel- Palladium-Gold (NiPdAu) oder Nickel-Silber-Palladium (NiPdAg) vorgesehen.Is preferred (as a "preplated lead frame") for coating Aluminum or a nickel-containing compound, for example Nickel-gold (NiAu), nickel-palladium (NiPd), nickel Palladium-Gold (NiPdAu) or Nickel-Silver-Palladium (NiPdAg) intended.

Aluminium kann grundsätzlich galvanisch auf den Leiterrahmen aufgebracht werden. Eine besonders kostengünstige und prozeß­ technisch bevorzugte Ausgestaltung der Erfindung sieht aller­ dings vor, daß das Aluminium auf die Kontaktflächen durch Walzplattieren aufgebracht ist.Aluminum can be galvanically applied to the lead frame be applied. A particularly inexpensive and process technically preferred embodiment of the invention sees everyone dings before that the aluminum on the contact surfaces Roll cladding is applied.

Eine weitere Vereinfachung des Fertigungsprozesses und eine erhebliche Einsparung von Beschichtungsmaterial läßt sich nach einer vorteilhaften Fortbildung der Erfindung dadurch erreichen, daß der Leiterrahmen nur partiell auf den Kontakt­ flächen beschichtet ist.Another simplification of the manufacturing process and one considerable savings in coating material can be made after an advantageous development of the invention  achieve that the lead frame is only partially on the contact surface is coated.

Ausführungsbeispiele der Erfindung werden nachfolgend anhand einer Zeichnung weiter erläutert; dabei zeigen vergrößert:Exemplary embodiments of the invention are described below a drawing further explained; show enlarged:

Fig. 1 eine erfindungsgemäße Anschlußanordnung, Fig. 1 shows a connector assembly according to the invention,

Fig. 2 einen Querschnitt der entlang der Linie I-I in Fig. 1 und Fig. 2 shows a cross section along the line II in Fig. 1 and

Fig. 3 eine weitere erfindungsgemäße Anschlußanordnung. Fig. 3 shows a further connection arrangement according to the invention.

Die in den Fig. 1 und 2 dargestellte Anschlußanordnung um­ faßt einen Leiterrahmen 1 (auch als Zuleitungsrahmen oder "Leadframe" bezeichnet), der zunächst Bestandteil eines Lei­ terrahmenbandes 2 sein kann, das eine Vielzahl entsprechender Leiterrahmen enthält. Die Leiterrahmen sind in an sich be­ kannter Weise beispielsweise durch Stanzen eines Ausgangsban­ des aus einem metallischen Werkstoff gebildet. Im Ausfüh­ rungsbeispiel sind jeweils zwei Leiterrahmen spiegel­ symmetrisch zur Längsachse A erzeugt. Bevorzugt wird als Lei­ terrahmenwerkstoff Kupfer oder eine Kupferlegierung verwen­ det. Der Leiterrahmen weist Leitungen 3 auf, die äußere Enden 3a ("outer leads") und innere Enden 3b ("inner leads") haben. An den inneren Enden 3b sind Kontaktflächen 5 zur Kontaktie­ rung eines nur in Fig. 1 andeutungsweise dargestellten elek­ tronischen Bauteils 8 vorgesehen.The connection arrangement shown in FIGS . 1 and 2 comprises a lead frame 1 (also referred to as a lead frame or "lead frame"), which may initially be part of a Lei frame frame 2 which contains a plurality of corresponding lead frames. The lead frames are formed in a manner known per se, for example by stamping an output strip from a metallic material. In the example, two lead frames are each produced symmetrically to the longitudinal axis A. Copper or a copper alloy is preferably used as the lead frame material. The lead frame has lines 3 , the outer ends 3 a ("outer leads") and inner ends 3 b ("inner leads"). At the inner ends 3 b, contact surfaces 5 are provided for contacting an electronic component 8, which is only hinted at in FIG. 1.

Die Kontaktflächen 5 sind mit Aluminium 10 beschichtet, wobei die Beschichtung nur zur Verdeutlichung in Fig. 1 (beim rechten Leiterrahmen) kreuzschraffiert dargestellt ist. Mit der Aluminiumschicht ist durch Bonden ein Verbindungsdraht (Bonddraht) 12, 12' verbunden, der zu einem Anschlußkontakt 14, 14' des Bauteils 8 führt. Der Draht 12, 12' ist mit dem jeweiligen Anschlußkontakt ebenfalls durch Bonden verbunden. The contact surfaces 5 are coated with aluminum 10 , the coating being shown cross-hatched only for clarification in FIG. 1 (for the right lead frame). A connecting wire (bonding wire) 12 , 12 'is connected to the aluminum layer by bonding, which leads to a connection contact 14 , 14 ' of the component 8 . The wire 12 , 12 'is also connected to the respective connection contact by bonding.

Wie Fig. 1 verdeutlicht, ist der Leiterrahmen 1 nur partiell auf den Kontaktflächen 5 mit Aluminium 10 beschichtet. Das Aluminium ist bevorzugt durch Walzplattieren aufgebracht, wo­ bei vorteilhafterweise gleichzeitig mehrere Kontaktflächen 5 und 15 (vgl. linker Teil der Fig. 1) beschichtet werden.As illustrated in FIG. 1, the lead frame 1 is only partially coated with aluminum 10 on the contact surfaces 5 . The aluminum is preferably applied by roll cladding, where several contact surfaces 5 and 15 (cf. left part of FIG. 1) are advantageously coated at the same time.

Die in Fig. 3 dargestellte Anschlußanordnung umfaßt einen Kupfer-Leiterrahmen ("Leadframe") 100, von dem in Fig. 3 nur sein Innenbereich mit inneren Enden 101b von Zuleitungen 101 dargestellt ist. Auf dem Leiterrahmen 100 sind z. B. zwei elektronische Leistungs-Bauelemente 102, 103 montiert. Die Bauelemente 102, 103 können z. B. mittels Weichlot ("soft sol­ dering") oder Epoxydharz auf Inseln 105, 106 des Leiterrah­ mens 100 fixiert sein. An den inneren Enden 101b sind Kon­ taktflächen 108 zur Kontaktierung der elektronischen Bauele­ mente 102, 103 vorgesehen.The connection arrangement shown in FIG. 3 comprises a copper lead frame ("lead frame") 100 , of which only its inner region with inner ends 101 b of supply lines 101 is shown in FIG. 3. On the lead frame 100 z. B. two electronic power components 102 , 103 mounted. The components 102 , 103 can, for. B. with soft solder ("soft sol dering") or epoxy resin on islands 105 , 106 of the Leiterrah mens 100 be fixed. At the inner ends 101 b Kon contact surfaces 108 for contacting the electronic components 102 , 103 are provided.

Die Kontaktflächen 108 sind mit einer nickelhaltigen Be­ schichtung 110 z. B. aus Nickel-Palladium (NiPd), Nickel- Palladium-Gold (NiPdAu) oder Nickel-Palladium-Silber (NiPdAg) versehen. Die Beschichtung ist zur Hervorhebung in Fig. 3 schraffiert dargestellt. Die Beschichtung kann bereits vor der endgültigen Strukturierung und Formung (z. B. durch einen Stanzvorgang) des Leiterrahmens 100 an den Stellen des Lei­ terrahmens 100 aufgebracht werden, an denen später die inne­ ren Enden 101b entstehen (sog. "preplated leadframe"). Mit der Beschichtung 110 ist jeweils durch Bonden ein Verbin­ dungsdraht 112 verbunden, der zu einem Anschlußkontakt 114 des Bauelements 102 führt. Der Draht 112 ist mit dem An­ schlußkontakt 114 ebenfalls durch Bonden verbunden. Der An­ schlußkontakt 114 ist einem Steuer- oder Signaleingang des Bauelements 102 zugeordnet, der mit einer nur geringen Si­ gnalleistung beaufschlagt wird. Demgemäß kann für den Bond­ draht 112 ein Golddraht (Au-Bonddraht) eingesetzt werde, der kostengünstig bondbar ist und nur einen vergleichsweise ge­ ringen Durchmesser und einen geringen Flächenbedarf hat, so daß die Flache des Anschlußkontaktes 114 vergleichsweise klein und platzsparend ausgeführt werden kann.The contact surfaces 108 are with a nickel-containing coating 110 z. B. made of nickel-palladium (NiPd), nickel-palladium-gold (NiPdAu) or nickel-palladium-silver (NiPdAg). The coating is shown hatched in FIG. 3 for emphasis. The coating can already before the final structuring and forming (for. Example, by a stamping operation) of the lead frame 100 at the positions of Lei be applied terrahmens 100 at which later the inherent ren ends 101 b are formed (so-called. "Preplated lead frame") . With the coating 110 , a connec tion wire 112 is connected by bonding, which leads to a connection contact 114 of the component 102 . The wire 112 is connected to the terminal contact 114 also by bonding. At the terminal contact 114 is assigned to a control or signal input of the component 102 , which is acted upon with only a small signal output. Accordingly, a gold wire (Au bond wire) can be used for the bond wire 112 , which can be bonded cost-effectively and has only a comparatively low ring diameter and a small area requirement, so that the area of the contact 114 can be made comparatively small and space-saving.

Die Bauelemente 102, 103 sind als Leistungs-Bauelemente mit Leistungs-Anschlüssen (Leistungsanschluß-Kontakten) 117, 118 versehen, über die Ströme mit erheblicher Leistung fließen. Dazu sind entsprechend größere Leitungsquerschnitte auch der Anschlußdrähte vorgesehen. Die dafür verwendeten Anschluß­ drähte 120, 121 sind Aluminium-Bonddrähte.The components 102 , 103 are provided as power components with power connections (power connection contacts) 117 , 118 , over which currents with considerable power flow. Correspondingly larger cable cross-sections of the connecting wires are also provided. The connecting wires 120 , 121 used for this are aluminum bonding wires.

Der Leiterrahmen gestattet aufgrund der Beschichtung seiner Kontaktflächen 5 (Fig. 1 und 2) bzw. 108 (Fig. 3) sowohl die Verwendung von Gold-Bonddrähten 12 bzw. 112 als auch Alu­ minium-Bonddrähten 12' bzw. 121. Dies eröffnet die vorteil­ hafte Möglichkeit, das Material der Bonddrähte anwendungsspe­ zifisch auszuwählen. Insbesondere können für Leistungsverbin­ dungen vergleichsweise dicke Aluminium-Bonddrähte eingesetzt werden, während für Steuer- oder Signalleitungen dünne Gold- Bonddrähte verwendet werden können, so daß sich insgesamt die Kosten zur Herstellung der Bondverbindungen erheblich redu­ zieren lassen.Due to the coating of its contact surfaces 5 ( FIGS. 1 and 2) and 108 ( FIG. 3), the lead frame permits the use of gold bonding wires 12 and 112 as well as aluminum bonding wires 12 'and 121 . This opens up the advantageous possibility of selecting the material of the bonding wires in an application-specific manner. In particular, comparatively thick aluminum bonding wires can be used for power connections, while thin gold bonding wires can be used for control or signal lines, so that overall the costs for producing the bonding connections can be considerably reduced.

Claims (4)

1. Anschlußanordnung
  • - mit einem metallischen Leiterrahmen (1) mit mehreren Kon­ taktflächen (5), mit denen Gold-Anschlußdrähte (12) durch Bonden verbunden sind, die zu Signal- und/oder Steuer- Anschlußkontakten (14) eines elektronischen Bauteils (8) führen, dadurch gekennzeichnet, daß
  • - die Kontaktflächen (5) mit einem Material (10) beschichtet sind, das sowohl zum Bonden von Gold-Anschlußdrähten (12) als auch zum Bonden von Aluminium-Anschlußdrähten (12') ge­ eignet ist, und daß
  • - zumindest ein zu einem Leistungs-Anschlußkontakt (14', 117) führender Anschlußdraht ein Aluminium-Anschlußdraht (12') ist.
1. Connection arrangement
  • - With a metallic lead frame ( 1 ) with a plurality of contact surfaces ( 5 ), with which gold connecting wires ( 12 ) are connected by bonding, which lead to signal and / or control connection contacts ( 14 ) of an electronic component ( 8 ), characterized in that
  • - The contact surfaces ( 5 ) are coated with a material ( 10 ), which is suitable for both the bonding of gold connecting wires ( 12 ) and for bonding aluminum connecting wires ( 12 '), and that
  • - At least one lead wire leading to a power connection contact ( 14 ', 117 ) is an aluminum lead wire ( 12 ').
2. Anschlußanordnung nach Anspruch 1, dadurch gekennzeichnet, daß
  • - die Kontaktflächen (5) mit Aluminium oder einer nickelhal­ tigen Verbindung beschichtet sind.
2. Connection arrangement according to claim 1, characterized in that
  • - The contact surfaces ( 5 ) are coated with aluminum or a nickel-containing compound.
3. Anschlußanordnung nach Anspruch 2, dadurch gekennzeichnet, daß das Aluminium (10) auf die Kontaktflächen (5) durch Walzplat­ tieren aufgebracht ist.3. Connection arrangement according to claim 2, characterized in that the aluminum ( 10 ) on the contact surfaces ( 5 ) is applied by rolling plates. 4. Anschlußanordnung nach Anspruch 1, 2 oder 3, dadurch gekennzeichnet, daß der Leiterrahmen (1) nur partiell auf den Kontaktflächen (5) beschichtet ist.4. Connection arrangement according to claim 1, 2 or 3, characterized in that the lead frame ( 1 ) is only partially coated on the contact surfaces ( 5 ).
DE19828190A 1998-06-24 1998-06-24 Terminal arrangement Ceased DE19828190A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19828190A DE19828190A1 (en) 1998-06-24 1998-06-24 Terminal arrangement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19828190A DE19828190A1 (en) 1998-06-24 1998-06-24 Terminal arrangement

Publications (1)

Publication Number Publication Date
DE19828190A1 true DE19828190A1 (en) 1999-09-23

Family

ID=7871900

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19828190A Ceased DE19828190A1 (en) 1998-06-24 1998-06-24 Terminal arrangement

Country Status (1)

Country Link
DE (1) DE19828190A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006018671A1 (en) * 2004-08-19 2006-02-23 Infineon Technologies Ag Mixed wire semiconductor lead frame package
US11598904B2 (en) 2018-12-11 2023-03-07 Infineon Technologies Ag Power semiconductor module and method for producing a power semiconductor module

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3112507A1 (en) * 1981-03-30 1982-10-07 Siemens AG, 1000 Berlin und 8000 München SYSTEM CARRIER
DE3717246A1 (en) * 1986-05-23 1987-11-26 Mitsubishi Electric Corp NICKEL-BASED MATERIAL FOR A SEMICONDUCTOR ARRANGEMENT
EP0250146A1 (en) * 1986-06-16 1987-12-23 Texas Instruments Incorporated Palladium plated lead frame for integrated circuit
DE4414729A1 (en) * 1993-04-28 1994-11-03 Mitsubishi Shindo Kk Material for a line frame and line frame for semiconductor components
EP0731505A2 (en) * 1995-03-06 1996-09-11 Motorola, Inc. Semiconductor leadframe structure and method of manufacturing the same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3112507A1 (en) * 1981-03-30 1982-10-07 Siemens AG, 1000 Berlin und 8000 München SYSTEM CARRIER
DE3717246A1 (en) * 1986-05-23 1987-11-26 Mitsubishi Electric Corp NICKEL-BASED MATERIAL FOR A SEMICONDUCTOR ARRANGEMENT
EP0250146A1 (en) * 1986-06-16 1987-12-23 Texas Instruments Incorporated Palladium plated lead frame for integrated circuit
DE4414729A1 (en) * 1993-04-28 1994-11-03 Mitsubishi Shindo Kk Material for a line frame and line frame for semiconductor components
EP0731505A2 (en) * 1995-03-06 1996-09-11 Motorola, Inc. Semiconductor leadframe structure and method of manufacturing the same

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP 06318662 A, In: Pat. Abstr. of JP *
JP 07161905 A, In: Pat. Abstr. of JP *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006018671A1 (en) * 2004-08-19 2006-02-23 Infineon Technologies Ag Mixed wire semiconductor lead frame package
US8105932B2 (en) 2004-08-19 2012-01-31 Infineon Technologies Ag Mixed wire semiconductor lead frame package
US9087827B2 (en) 2004-08-19 2015-07-21 Infineon Technologies Ag Mixed wire semiconductor lead frame package
US11598904B2 (en) 2018-12-11 2023-03-07 Infineon Technologies Ag Power semiconductor module and method for producing a power semiconductor module

Similar Documents

Publication Publication Date Title
DE102005028951B4 (en) Arrangement for the electrical connection of a semiconductor circuit arrangement with an external contact device
DE102007016061B4 (en) Module with semiconductor chip and method
DE3009295A1 (en) SEMICONDUCTOR BLOCK
DE102005039165B4 (en) Wire and strip bonded semiconductor power device and method of making the same
EP2743973A2 (en) Method for contacting a semiconductor element by welding a contact element to a sintered layer on the semiconductor element and semiconductor component with increased stability against thermomechanical influence
DE102013107725A1 (en) Smart card module
DE69805404T2 (en) METHOD FOR PRODUCING CONTACTLESS CARDS WITH ANTENNA CONNECTION BY SOLDERED WIRES
DE3428881A1 (en) METHOD FOR PRODUCING AN INTEGRATED CIRCUIT DEVICE
DE69004581T2 (en) Plastic-coated hybrid semiconductor device.
DE102007036841B4 (en) Semiconductor device with semiconductor chip and method for its production
DE112017002198T5 (en) SEMICONDUCTOR DEVICE
DE10223738B4 (en) Method for connecting integrated circuits
DE102006023998B4 (en) Electronic circuit arrangement and method for producing such
DE10200268A1 (en) Semiconductor device
DE10124141B4 (en) Connecting device for an electronic circuit arrangement and circuit arrangement
EP2133915A1 (en) Semiconductor assembly with specially formed bonds and method for manufacturing the same
DE102004036905A1 (en) Vertical power semiconductor device with a semiconductor chip and method for producing the same
DE10333800B3 (en) Semiconductor component e.g. bridge circuit, using chip-on-chip technology with end sections of electrical terminal bonding wires as contact region between lower and upper semiconductor elements
DE19828190A1 (en) Terminal arrangement
WO2007014800A1 (en) Chip module for installing in sensor chip cards for fluidic applications and method for producing a chip module of this type
DE102007002807B4 (en) chip system
DE102008033410A1 (en) Power electronic connection device and manufacturing method for this purpose
DE10134943A1 (en) Electronic power component comprises a semiconductor chip having contact surfaces of source contacts on its active surface and a gate contact
DE112019003664T5 (en) SEMICONDUCTOR COMPONENT AND METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT
DE102006038875B4 (en) Manufacturing process for an electronic component and electronic component

Legal Events

Date Code Title Description
OAV Publication of unexamined application with consent of applicant
OP8 Request for examination as to paragraph 44 patent law
8131 Rejection