DE19641980C1 - White light source used in opto-electronic devices - Google Patents

White light source used in opto-electronic devices

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Publication number
DE19641980C1
DE19641980C1 DE19641980A DE19641980A DE19641980C1 DE 19641980 C1 DE19641980 C1 DE 19641980C1 DE 19641980 A DE19641980 A DE 19641980A DE 19641980 A DE19641980 A DE 19641980A DE 19641980 C1 DE19641980 C1 DE 19641980C1
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Germany
Prior art keywords
light
white light
light source
chip
emitting
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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DE19641980A
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German (de)
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DE19641980C5 (en
Inventor
Hans-Dieter Wustlich
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Led Device Packages (AREA)

Abstract

White light source comprises an arrangement of phosphor diode chips emitting light in different colours. The novelty is that the arrangement has two phosphor diode chips (11, 12) emitting blue light at 425-460 nm and yellow-green light at 560-570 nm.

Description

Die Erfindung betrifft eine Weißlichtquelle mit einer dem additiven Farbmischen dienenden Anordnung von Licht in unterschiedlichen Farben emittierenden Leuchtdioden-Chips.The invention relates to a white light source with a additive color mixing arrangement of light in different color emitting light emitting diode chips.

Es ist durch Benutzung gemäß Siemens-Firmendruckschrift "Optoelectronics Data Book 1995 · 1996" bekannt, mittels einer Anordnung von mehreren, jeweils farbiges Licht ausstrahlenden Leuchtdioden-Chips nach dem Prinzip des additiven Farbmischens die Emission von weißem Licht zu erzeugen. Ein besonderes Merkmal der eingesetzten Leuchtdioden-Chips besteht darin, daß die Leuchtdioden-Chips in Abhängigkeit von ihrer Zusammensetzung einfarbiges Licht der drei Grundfarben rot - grün - blau (RGB) mit einer aus der Zusammensetzung jeweils resultierenden Peakwellenlänge des emittierten Lichts abstrahlen. Bekannte Weißlichtquellen basieren daher auf einer Anordnung von in allen drei Grundfarben lichtemittierenden Leuchtdioden-Chips. Damit ist der Nachteil verbunden, daß die Erzeugung eines möglichst reinen Weißlicht-Empfindens aufgrund der erforderlichen Einstellung von drei Farbkomponenten aufwendig und teuer ist.It is by use according to Siemens company brochure "Optoelectronics Data Book 1995 · 1996", by means of an arrangement of several, each colored light emitting light emitting diode chips according to the principle of additive color mixing the emission of white light produce. A special feature of the used Light-emitting diode chips is that the light-emitting diode chips depending on their composition, single-color light of the three primary colors red - green - blue (RGB) with one off the composition of the resulting peak wavelength emit the emitted light. Known  White light sources are therefore based on an arrangement of in all three basic colors of light-emitting diode chips. This has the disadvantage that the generation of a pure white light sensation due to the required setting of three color components is complex and expensive.

Aus der US 48 57 801 ist z. B. eine Anzeige bekannt, welche aus einer Kombination von roten, grünen und blauen LEDs bestehen kann.From US 48 57 801 z. B. an ad known, which consists of a combination of red, green and blue LEDs can exist.

Der Erfindung liegt daher die Aufgabe zugrunde, eine Weißlichtquelle mit den gattungsgemäßen Merkmalen zu vereinfachen und gleichzeitig das Weißlicht-Empfinden zu verbessern.The invention is therefore based on the object White light source with the generic features simplify and at the same time the feeling of white light improve.

Die Lösung dieser Aufgabe ergibt sich einschließlich vorteilhafter Ausgestaltungen und Weiterbildungen aus dem Inhalt der Patentansprüche.The solution to this problem is inclusive advantageous refinements and developments from Content of the claims.

Die Erfindung sieht in ihrem Grundgedanken eine Anordnung von zwei in den Farben blau bei einer Peakwellenlänge von 425 bis 460 nm sowie gelbgrün bei einer Peakwellenlänge von 560 bis 570 nm lichtemittierenden Leuchtdioden-Chips vor. Hiermit ist der Vorteil verbunden, daß zur Erzeugung eines Weißlichtes nur zwei Chips angeordnet und eingestellt werden müssen. Dabei hat sich überraschend herausgestellt, daß schon mit einer Anordnung von zwei in den Farben blau und gelbgrün vorliegendes Licht emittierenden Leuchtdioden- Chips ein sehr guter Weißlicht-Effekt zu erzielen ist. Damit ist der Aufwand für entsprechende Weißlichtquellen erheblich herabgesetzt, wobei die Reinheit des Weißlichtes gleichzeitig verbessert ist. The basic idea of the invention is an arrangement of two in the colors blue at a peak wavelength of 425 to 460 nm and yellow-green at a peak wavelength of 560 to 570 nm light emitting diode chips. This has the advantage that to generate a White light only two chips arranged and set Need to become. It surprisingly turned out that already with an arrangement of two in the colors blue and yellow-green light-emitting light emitting diodes Chips a very good white light effect can be achieved. In order to the effort for corresponding white light sources is considerable reduced, the purity of the white light is improved at the same time.  

Nach einem Ausführungsbeispiel der Erfindung ist der blaues Licht emittierende Leuchtdioden-Chip ein aus Gallium- Nitrit (GaN) bestehender Chip. Dieser GaN-Chip kann nach einem Ausführungsbeispiel der Erfindung aus GaN auf Siliciumcarbid-Substrat (GaN auf SiC) bestehen, wobei ein derartiger Chip auf eine Peakwellenlänge des emittierten Lichts von 427 nm bis 437 nm eingestellt ist, vorzugsweise auf eine Peakwellenlänge von 432 nm.According to one embodiment of the invention, the blue one Light emitting light emitting diode chip made of gallium Nitrite (GaN) existing chip. This GaN chip can be an embodiment of the invention made of GaN Silicon carbide substrate (GaN on SiC) exist, where a such chip to a peak wavelength of the emitted Light is set from 427 nm to 437 nm, preferably to a peak wavelength of 432 nm.

Als gelbgrünes Licht emittierender Chip ist ein Gallium- Phosphit-Chip (GaP) vorgesehen, der nach einem Ausführungsbeispiel der Erfindung auf eine Wellenlänge des emittierten Lichts von 565 nm eingestellt sein kann.As a yellow-green light-emitting chip, a gallium Phosphite chip (GaP) provided after a Embodiment of the invention in a The wavelength of the emitted light is set at 565 nm can be.

Nach einem Ausführungsbeispiel der Erfindung kann das Weißlicht -Empfinden des menschlichen Auges dadurch verbessert werden, daß die Leuchtdichten (cd/m²) beziehungsweise die Leuchtstärken (cd) des blaues Licht emittierenden Leuchtdioden-Chips und des gelbgrünes Licht emittierenden Leuchtdioden-Chips in einem Verhältnis zwischen 1 : 5 und 1 : 8 eingestellt sind, wobei vorzugsweise ein Verhältnis von zwischen 1 : 6,5 und 1:7,5 eingestellt ist.According to an embodiment of the invention, this can White light sensation of the human eye be improved so that the luminance (cd / m²) or the luminosity (cd) of the blue Light-emitting light emitting diode chips and yellow-green Light emitting diode chips in a ratio are set between 1: 5 and 1: 8, where preferably a ratio of between 1: 6.5 and 1: 7.5 is set.

Überraschend wurde aufgefunden, daß die Anordnung der beiden verschiedenfarbiges Licht abstrahlenden Chip-Arten zueinander für die Weißlicht-Emission nicht von Bedeutung ist, solange an jedem Punkt der Emissionsquelle die oben beschriebenen Leuchtdichte- beziehungsweise Leuchtstärke­ verhältnisse eingehalten werden. Mögliche Anordnungen der Leuchtdioden-Chips sind in den beiden nachstehend beschriebenen Hintergrundbeleuchtungen angegeben; derartige Hintergrundbeleuchtungen sind in ihrer prinzipiellen Bauweise beispielsweise in der DE 39 14 448 C2 beschrieben.It was surprisingly found that the arrangement of the two different-colored light-emitting chip types not relevant to each other for the white light emission is as long as the above at each point of the emission source described luminance or luminosity conditions are observed. Possible arrangements of the LED chips are in the two below backlights described; such  Backlights are basic in their Construction described for example in DE 39 14 448 C2.

Die Erfindung wird im folgenden anhand zweier Ausführungs­ beispiele erläutert.The invention is based on two embodiments examples explained.

Die in Fig. 1 dargestellte Zusammenstellung läßt in einer Draufsicht auf eine Platine 10 die Anordnung von blaues Licht emittierenden GaN-Chips 11 sowie von gelbgrünes Licht emittierenden GaP-Chips 12 erkennen. Die beiden unterschiedlichen Leuchtdioden-Chips 11, 12 sind in zwei Reihen jeweils im Wechsel zueinander angeordnet.See compilation shown in FIG. 1 can be in a top view of a circuit board 10, the arrangement of blue light-emitting GaN-chip 11 and emitting light of yellow-green GaP chip 12. The two different light-emitting diode chips 11 , 12 are arranged alternately in two rows.

Die in Fig. 2 dargestellte Draufsicht auf eine Platine 10 läßt einzelne Pads 13 erkennen, wobei auf jedem Pad 13 - wie nicht weiter dargestellt - jeweils ein blaues Licht emittierender GaN-Chip 11 und ein gelbgrünes Licht emittierender GaP-Chip 12 angeordnet sind.The plan view of a circuit board 10 shown in FIG. 2 shows individual pads 13 , wherein a blue light-emitting GaN chip 11 and a yellow-green light-emitting GaP chip 12 are arranged on each pad 13 , as is not shown further.

Beide Ausführungsformen zeigen bei einer jeweils gleichmäßigen Bestromung zur Erzeugung eines Leuchtdichten- (beziehungsweise Leuchtstärken-) verhältnisses zwischen blauem und gelbgrünem Licht zwischen 1 : 6,5 und 1 : 7,5 gute Weißlicht-Ausleuchtung.Both embodiments show in each case uniform current supply to generate a luminance (or luminosity) ratio between blue and yellow-green light between 1: 6.5 and 1: 7.5 good white light illumination.

Die Erfindung ist auch anwendbar auf die Erzeugung von Weißlicht abstrahlenden Leuchtdioden, bei denen in einem zugeordneten Reflektor jeweils ein blaues Licht und ein gelbgrünes Licht emittierender Leuchtdioden-Chip angeordnet sind.The invention is also applicable to the generation of White light emitting diodes, in which in one assigned a blue light and a reflector arranged yellow-green light-emitting diode chip are.

Maßgeblich für die Zuordnung der verschiedenfarbiges Licht abstrahlenden Leuchtdioden-Chips 11, 12 und deren Bestromung ist allein die beabsichtigte Gesamtleuchtdichte (Intensität) der Weißlichtquelle als solcher; insofern ergibt sich die zur Erzielung der Gesamtleuchtdichte erforderliche Anzahl von Chips pro cm² in den vorgegebenen Farbemissionen.Only the intended total luminance (intensity) of the white light source as such is decisive for the assignment of the differently colored light-emitting diode chips 11 , 12 and their energization; In this respect, the number of chips per cm² required to achieve the overall luminance results in the given color emissions.

Claims (8)

1. Weißlichtquelle mit einer dem additiven Farbmischen dienenden Anordnung von Licht in unterschiedlichen Farben emittierenden Leuchtdioden-Chips, gekennzeichnet durch eine Anordnung von zwei in den Farben blau bei einer Peakwellenlänge von 425 bis 460 nm sowie gelbgrün bei einer Peakwellenlänge von 560 bis 570 nm lichtemittierenden Leuchtdioden-Chips (11, 12).1.White light source with an additive color mixing arrangement of light-emitting diode chips emitting light in different colors, characterized by an arrangement of two light-emitting light-emitting diodes in the colors blue at a peak wavelength of 425 to 460 nm and yellow-green at a peak wavelength of 560 to 570 nm Chips ( 11 , 12 ). 2. Weißlichtquelle nach Anspruch 1, dadurch gekennzeichnet, daß der blaues Licht emittierende Leuchtdioden-Chip (11) ein aus Gallium-Nitrit (GaN) bestehender Chip ist. 2. White light source according to claim 1, characterized in that the blue light-emitting LED chip ( 11 ) is a gallium nitrite (GaN) chip. 3. Weißlichtquelle nach Anspruch 2, dadurch gekennzeichnet, daß der blaues Licht emittierende Leuchtdioden-Chip aus GaN auf Siliciumcarbid-Substrat (GaN auf SiC), besteht und auf eine Peakwellenlänge des emittierten Lichts zwischen 427 nm und 435 nm eingestellt ist.3. White light source according to claim 2, characterized in that that the blue light emitting diode chip GaN on silicon carbide substrate (GaN on SiC) and to a peak wavelength of the emitted light is set between 427 nm and 435 nm. 4. Weißlichtquelle nach Anspruch 3, dadurch gekennzeichnet, daß der GaN auf SiC-Chip auf eine Peakwellenlänge des emittierten Lichts von 432 nm eingestellt ist.4. White light source according to claim 3, characterized in that the GaN on SiC chip to a peak wavelength of emitted light of 432 nm is set. 5. Weißlichtquelle nach Anspruch 1, dadurch gekennzeichnet, daß der gelbgrünes Licht emittierende Leuchtdioden-Chip (12) ein aus Gallium-Phosphit bestehender Chip (GaP) ist.5. White light source according to claim 1, characterized in that the yellow-green light-emitting diode chip ( 12 ) is a gallium phosphite chip (GaP). 6. Weißlichtquelle nach Anspruch 5, dadurch gekennzeichnet, daß der GaP-Chip auf eine Wellenlänge des emittierten Lichts von 565 nm eingestellt ist.6. White light source according to claim 5, characterized in that that the GaP chip at a wavelength of the emitted Light of 565 nm is set. 7. Weißlichtquelle nach einem der Ansprüche 1 bis 6, dadurch gekennzeichnet, daß die Leuchtdichten (cd/m²) und/oder die Leuchtstärken (cd) des blaues Licht emittierenden Leuchtdioden-Chips (11) und des gelbgrünes Licht emittierenden Leuchtdioden-Chips (12) in einem Verhältnis zwischen 1 : 5 und 1 : 8 eingestellt sind.7. White light source according to one of claims 1 to 6, characterized in that the luminance (cd / m²) and / or the luminosity (cd) of the blue light-emitting diode chip ( 11 ) and the yellow-green light-emitting diode chip ( 12 ) are set in a ratio between 1: 5 and 1: 8. 8. Weißlichtquelle nach Anspruch 7, dadurch gekennzeichnet, daß die Leuchtdichten und/oder die Leuchtstärken zwischen 1 : 6,5 und 1 : 7,5 eingestellt sind.8. White light source according to claim 7, characterized in that that the luminance and / or the luminosity are set between 1: 6.5 and 1: 7.5.
DE19641980A 1996-10-11 1996-10-11 White light source based on light-emitting diode chips with only two different color-emitting light-emitting diode chips Expired - Lifetime DE19641980C5 (en)

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DE19641980A DE19641980C5 (en) 1996-10-11 1996-10-11 White light source based on light-emitting diode chips with only two different color-emitting light-emitting diode chips

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Application Number Priority Date Filing Date Title
DE19641980A DE19641980C5 (en) 1996-10-11 1996-10-11 White light source based on light-emitting diode chips with only two different color-emitting light-emitting diode chips

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DE19641980C1 true DE19641980C1 (en) 1998-01-29
DE19641980C5 DE19641980C5 (en) 2004-08-26

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1046196A1 (en) † 1998-09-28 2000-10-25 Koninklijke Philips Electronics N.V. Lighting system
JP2004080046A (en) * 2000-05-31 2004-03-11 Matsushita Electric Ind Co Ltd Led lamp and lamp unit
EP1160883A3 (en) * 2000-05-31 2005-06-22 Matsushita Electric Industrial Co., Ltd. LED lamp
DE10230105B4 (en) * 2001-07-05 2007-07-26 Tridonic Optoelectronics Gmbh White LED light source
EP2287925A3 (en) * 1998-01-30 2012-04-18 OSRAM Opto Semiconductors GmbH Expansion compensated optoelectronic semiconductor device, in particular UV emitting diode and process for manufacturing the same
DE102011000657A1 (en) * 2011-02-11 2012-08-16 Andree Jahnel Light strip e.g. LED strip, for e.g. decorative lighting application, has three sets of LEDs secured at carrier, where LEDs are arranged along longitudinal direction of carrier and controlled independent of each other

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857801A (en) * 1983-04-18 1989-08-15 Litton Systems Canada Limited Dense LED matrix for high resolution full color video
EP0713999A1 (en) * 1994-11-24 1996-05-29 Siemens Integra Verkehrstechnik Ag Colour-light signal using LEDs
US5661074A (en) * 1995-02-03 1997-08-26 Advanced Technology Materials, Inc. High brightness electroluminescent device emitting in the green to ultraviolet spectrum and method of making the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2287925A3 (en) * 1998-01-30 2012-04-18 OSRAM Opto Semiconductors GmbH Expansion compensated optoelectronic semiconductor device, in particular UV emitting diode and process for manufacturing the same
EP1046196A1 (en) † 1998-09-28 2000-10-25 Koninklijke Philips Electronics N.V. Lighting system
EP1046196B2 (en) † 1998-09-28 2011-07-27 Koninklijke Philips Electronics N.V. Lighting system
JP2004080046A (en) * 2000-05-31 2004-03-11 Matsushita Electric Ind Co Ltd Led lamp and lamp unit
EP1160883A3 (en) * 2000-05-31 2005-06-22 Matsushita Electric Industrial Co., Ltd. LED lamp
DE10230105B4 (en) * 2001-07-05 2007-07-26 Tridonic Optoelectronics Gmbh White LED light source
DE102011000657A1 (en) * 2011-02-11 2012-08-16 Andree Jahnel Light strip e.g. LED strip, for e.g. decorative lighting application, has three sets of LEDs secured at carrier, where LEDs are arranged along longitudinal direction of carrier and controlled independent of each other

Also Published As

Publication number Publication date
DE19641980C5 (en) 2004-08-26

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