DE1963374A1 - Method and device for storing information - Google Patents

Description

PATENTANWÄLTE Phone: (0271) 32409

DIPL-ING. ERICH SCHUBERT Telegram address: Patschub, Siegen

DIPL-ING. DIPL-W.-ING. G. ZWIRNER

59 Siegen, PO Box 325 Bank accounts:

Eiserner Strasse 227 Deutsche Bank AG.,

Branches in Siegen and Oberhausen (RhId.)

69 174 Zw / A December 17, 1969

UNITED KINGDOM ATOMIC ENERGY AUTHORITY 11, Charles II Street, London S.W.1, England

Priority is claimed for this application from British patent application No. 28605/69 dated June 5, 1969 »

Method and device for storing information

The invention relates to a method and an apparatus for. Storage of information.

The invention is particularly applicable to storage and reproduction of information in the technical branches of digital computer storage, storage oscilloscope and visual Playback devices such as radar, alphanumeric, graphic and videophone displays

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Compared to existing facilities and techniques for information storage and reproduction in the mentioned branches of technology, the following advantages are related achieved with the invention.

1. The invention is found in digital computer storage devices Use with main storage as well as with smaller supplementary storage. It is estimated that with comparable Do the memories according to the invention cost a greater capacity, faster access time and greater over-

fc than the best at the moment existing memory.

2. The application of the invention in the field of storage oscilloscopes and visual display devices can expect a long life of the stored information, and the information can be repeated either by exposure to an electron beam or by exposure to ultraviolet Light can be reproduced. The latter technique has the merit of greater stored life Information. Furthermore, parts of the stored information can be brought up to date if necessary, without having to destroy other parts.

3. The invention is based on the application of the following phenomena:

When phosphors are excited by electrons, they luminesce; however, at the same time incorrect or Defects created which quench the luminescence. These imperfections can, however, be eliminated or "cured" by heating for a corresponding period of time. will. For example, the fluorescent Kl / Tl shines - Thallium doped potassium iodide - at room temperature

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sufficiently strong if this fluorescent material is excited by high-energy electrons. The light is emitted in a broad band with a tip at 400 nm (nanometers), but such electrons can be impaired by a factor of more than 100 "up to the extinction of the luminescence "damaged ¹¹ v / earth. In the following, the term “radiation defect” (the luminescent radiation) is used. An electron beam can also be used to reverse or "heal" the radiation defect and restore the phosphor to its original luminescent state.

According to the present invention, the above-described phenomena are used for the purpose of storing information through education of areas of varying degrees of radiation defects on the surface of an electron-luminescent phosphor exploited.

While an electron luminescent phosphor is preferred as the phosphor, the invention includes a method the storage of information by forming areas of inconsistent degrees of radiation defects on a surface of a luminescent phosphor. In In this case it is important that the phosphor is selected so that the luminescence produced by irradiating the Phosphors can be excited with ultraviolet light, in areas that are exposed to radiation damage, deleted wordc? η can.

When applying the invention only storage of i; for digital information, writing and reading are also involved high -! eGehwii.digkoit an essential requirement, and “in The feature of the invention is based on the fact that two üra ^ e 'lc'r Lumine.; κ; -> η:;, which differ sufficiently clearly,

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around at high speeds by means of a scanning Electron beam to be read by the process electron beam damage and electron heating can be enrolled, and that both, especially the latter, with practical requirements satisfactory writing speed can be carried out. It can be shown that one enroll time. in the order of magnitude of 2 / us (microseconds) per bit possible is.

When the fluorescent Zl / Tl is damaged by radiation has been, it must be heated over a few hundred degrees Celsius if the damage or the radiation defect ih should be healed for less than a few seconds. Therefore, reducing the light output pulse by one large factor for a given read pulse, which is referred to as writing 1> 0, by means of a pulsed

Electron beam are carried out, which has such an energy level and power per pulse that the temperature of the affected volume of the phosphor is not increased above a few hundred degrees Celsius, with optimal Radiation defects and minimal annealing are created. It can be shown, for example, that a dose of 500 Jcm in the phosphor KI / Tl by means of a beam of 20 kV (kilovolts) and 6.4 mW (milliwatts) within a volume that is surrounded by a hemisphere of 2 / µm (micron) Diameter is shown, put in / 5 / US without exceeding the curing temperature would be, but the dose represents a radiation intensity strong enough to cause the desired defects

to achieve. You can also write 0 ^ 1 with

a pulsed electron beam, preferably from the same source, but at a higher power level per pulse be carried out so that the temperature of the affected

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Volume of the luminescent material (which in the sense of the 'viewing device 1 * 0 is damaged) close to the melting point of the fluorescent substance increases.

According to a further feature of the invention, the

The healing rate is increased and the 0 M

Writing time reduced to a small value by applying a pulse of energy only sufficient to heal approximately half of the defects. It can be shown that the time now required is reduced by a factor of about 1/100 in relation to the time required to eliminate about 99 ⁽ ß> of the defects, and that the change or difference in luminescence is nevertheless so great, that two states can be distinguished.

When an electron luminescent phosphor is used read out by pulsed electron beams of relatively low intensity, preferably from the same source » be effected. The damaged or Healed areas each generate a small or a large photon pulse, from which in turn a photocathode a corresponding current pulse is derived.

If, for example, a corresponding photoluminescent Phosphor is used, the radiation defect may

and the healing for writing 1 * O and Q »

take place as described above by means of electron beams, while reading with a luminescence excitation Radiation such as ultraviolet light would be carried out.

The use of an electron luminescent phosphor and da3 readout with an electron beam lower Intensity is preferred because it is the same electron beam source can be used for reading out as well as for registered mail.

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Further features of the invention are based on the device for carrying out the methods explained above,

The device can be an electron gun together with the associated beam deflection system, a target, the has a plate made of luminescent phosphor, which by means of electrons of the electron gun during the required Inscription damage and can be healed, a device for pulsing the beam at different times Current values, a device for directing the beam consisting of the exciting radiation to the fluorescent target and a luminescence sensitive device, preferably a photocathode, zur.Ableitung of readout signals from the phosphor.

The phosphor is preferably electron-luminescent and the reading is carried out by the excitation of luminescence a low-intensity electron beam from the electron gun.

The gun and target are located within a vacuum chamber, but the photocathode is preferably located in a separate chamber and can be part of a known photomultiplier.

The phosphor can be on the order of 1 mm thick and the area depends on the number of bits to be stored and the selected resolution. The phosphor can consist of a single crystal or be produced as a polycrystalline mass be. The annealing can be carried out without the phosphor being brought above its melting point, however, if necessary, more rapid healing can take place by partially dividing the volume corresponding to each bit is melted by placing a thin high melting point metal film on the surface of the struck by the electrons

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Luminous substance is brought, this partial melting can be allowed. The thin metal film holds the molten one Back phosphor and has the additional advantage of increasing the photon yield through reflection and undesirable to keep electrostatic effects low.

It has been found, however, that healing can already be achieved with 400 to 500 ⁰ G, despite the fact that at these temperatures healing due to a purely thermal cause cannot be expected. It is believed that healing is promoted by increased defect mobility in the radiation field.

According to the invention, a device for the combined storage and reproduction of information is also provided, the one coated with a luminescent phosphor surface, the luminescence locally by a Defect radiation, for example by bombarding with an electron beam, can be extinguished, a means of forming areas of varying degrees of radiation defects of the phosphor on the surface and a device for exciting the luminescence of the phosphor. The phosphor can, for example, be electron luminescent or be photoluminescent.

The phosphor is preferably applied as a layer to the screen surface of a cathode ray tube, for example by coating them with powdery phosphor and subjecting them to a heat treatment ("baked") will.

The electron beam device of the cathode ray tube can be arranged to control a radiation defect or healing of the defect takes place on the phosphor surface. It should be noted, however, that one is taking revenge

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copy J

• ϊ es-1: 9.6337.

Scanning an electron-luminescent phosphor surface with an electron beam of relatively low intensity, which is so strong that it causes luminescence but is not so strong that a radiation defect would occur is possible, and that the areas of the surface where "the luminescence has been extinguished by radiation spots in 1, contrast with the areas where the luminescence is not has been deleted.

By appropriately controlling the writing electron beam, any pattern can be recorded on the screen for "subsequent playback; - ^: " ■ · ■ ''^; ■ '- - ■ ^{; :} ·

While it is possible for the purpose of reproduction that the scanning 'electron supplies the excitation, best *: another appearance at elektroneniumineszentcn phosphors such as thallium doped-potassium iodide ^r is that the luminescence ultraviolet by irradiation to Leuchi the substance. Light · -excited ·: be. can, - The ε generated luminescence refrains from being extinguished at cells on which the radiation defect caused by the visual friction / electron beam is given- In a similar way, the luminescence is not at such points sα geTöGclrt ,. an.denen there is no radiation defect,., or an._denen _; _the ^ beam is not defective at least to one, essential: extent (in the order of 1/2 or more) ^ is healed. ..,. -, · ..-. _

Therefore, a preferred embodiment of the invention a device for irradiating the fluorescent-coated surface with ultraviolet light ... When using A cathode tube is this device at Pinem Ppnstor in the side wall of the tube bo-.jtigt, and an ultraviolet lamp is arranged so that iii through daa Fenater on the Suhirrache.

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The phosphor can be photoluminescent, different from electron luminescence, provided that that in the photoluminescent phosphor by electron beam bombardment generated radiation defect results in a local extinction of the luminescence with subsequent excitation radiation, for example with ultraviolet light.

To further explain the invention, reference is now made to the drawing, specifically showing:

Fig. 1 is a sketchy representation of a practical

Embodiment of the invention designed for storing 10 bits of digital information is.

Fig. 2 is a cross-sectional sketch of a second embodiment of the invention for the combined Storage and reproduction of information, and

3 shows a sketch of a modification the device according to FIG. 1.

A vacuum jacket E (Fig. 1) contains a miniature electron gun 2 and a X and Y deflecting system 5 with deflection electrodes. The target of the gun is a phosphor in the form of a plate 4 of thallium-doped potassium iodide (KI / Tl). The plate 4 is 6 mm square, is approximately 1 mm thick and is attached to the end face of the man-. by means of E. The thallium concentration is maintained within a range of 1/100 to 1/10 weight percent throughout the phosphor in order to ensure a generally uniform luminosity. A miniature photomultiplier tube 5 fits closely against this surface

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and has a photocathode 6 made of GsSbO, the spectral sensitivity of which corresponds to the emission of the phosphor. speaks.

Me cannon 2 is set up to emit an electron beam 7 of 15 kV, the diameter of which "for the phosphor is approximately 2 µm and has three different current values, namely 1, 200 and 500 nA. The penetration depth of a beam of 15 kV in Kl / Tl is approximately 1 mm, so that an approximately semicircular volume is affected by this radius, regardless of the magnitude of the current. The beam current is controlled to these values by means of a modulator M, depending on whether read pulses

to terminal a or write pulses for 1 K> at the

Terminal b or write pulses for 0> 1 applied to terminal c will.

The deflection electrode system 3 and the associated electronic control device (not shown) must control the beam 7 from 2 / µm in diameter to a linear accuracy in the case of the phosphor 4- from at least 1 to 3000 so as to control the Writing and reading out 10 'bits can be accommodated on an area of 6 by 6 mm of the phosphor 4.

The signal output of the photomultiplier 5 is via a suitable shaping and amplification stage A to a readout terminal d forwarded.

The phosphor 4 is preferably erased over the entire surface before assembly, so that it has the state

0 occupies. In operation, the beam control system causes a scan of the phosphor at a line spacing of 2 / µm and a dwell time at each line of approximately

1 / us. To write and to information every 2 / to save, the 0- or 1-signals are assigned to the climbing b or ο supplied. O signals applied to terminal b

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switch the beam current to 200 nA, which corresponds to this Time has no effect because the phosphor is entirely in the O-state. 1-signals fed to terminal c switch the beam current to 500 nA, which is sufficient to clear the radiation defect at any such writing position to heal. Subsequent O signals applied to terminal b cause a radiation defect and reduce the luminescence in those writing areas that occur during the 0 ^ 1 writing step have been healed. During this The photomultiplier is switched off.

To read out the photomultiplier 5 is switched on and a continuous train of pulses is applied to the terminal a, which switches the beam current to 1 nA. This value of the beam current is sufficient to excite each individual piece of volume of the phosphor to a high or low intensity of the luminescence, so that a corresponding electrical signal of high or low amplitude is derived from the photomultiplier. The luminescence lifetime in the range from 0 to 200 ^° C. is approximately between 300 to 100 ns. "

For ease of understanding, the above have been made Operations of writing and reading in relation to sequence and Serial access described. The device of this example however, it also allows direct parallel access.

A very beneficial facility can be a single electronic control device for controlling a plurality of memories included, for example those described above Execution form. Preferably each bit of a word allocated to a separate memory, so that the entire "facility can process all bits of 3 words at the same time.

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It should be noted that the device according to the previous example can also serve as an analog memory, since the luminescence intensity at a given Radiation dose is essentially a linear puncture of the jet stream, and for a given stream, one exponentially decreasing puncture dose, the concentration of impurities is however in such a Application particularly important and a polycrystalline liner A pressed part in pressed disk technology lends itself to achieving a sufficiently uniform impurity concentration in the phosphor.

In the embodiment of FIG. 2, the screen is 12 a cathode ray tube 11 coated inside with phosphor. The phosphor used preferably comprises KMgJV (Mn), i. potassium-magnesium fluoride doped with manganese. Potassium iodide doped with potassium can also be used, but for one Visual reproduction has the merit of manganese-doped potassium-magnesium fluoride in that the luminescence is peaked has a lianometer at a wavelength of about GOO. This is in the visible area, in which the eye is particularly sensitive. The power of KMgF- (Mn) im Compared to KI / Tl is that the contrast between the healed and the defected stage is low However, the choice of the phosphor can offset this disadvantage the necessity given when using ΚΙ / ΐΙ The conversion of the peak luminescent energy into visible light is considered to be balanced.

The manufacture of d - fluorescent crystals from KMgIV (Mn) or Kl / Tl is straightforward by simply adding the ingredients

fused to the necessary proportions, uxid crystals can be drawn into the well-known V-Ise. A approximately useful range of concentration is from 0.05 to 0.5 percent by weight in the

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This is the coating technique in which powdered phosphor is baked onto the surface known method for coating the luminescent screens of the Cathode ray tubes. The thickness of the phosphor layer should be chosen so that it is almost, but not entirely, that Electron beam is penetrated, which bombards the layer.

Inside the yakuum chamber formed by the tube 11 the electron gun 13 and the X and Y deflection electrodes 14 and 15 are arranged.

The electron gun 13 can be operated in a manner similar to that described with reference to FIG. 1, and Pig. 2 shows a sketch of a modulator Ma with control terminals aa, ba and ca for controlling the intensity of the Electron beam. When the size of the beam tip is 20 µm for writing the information to be reproduced should have, and the electron beam is accelerated by 15kV, then beam currents of 300 nA and 2 / uA required.

With a current at 300 η A, the areas exposed to the radiation by the beam on the screen are during the writing time in the order of 10 / us radiation damage. With a beam of 2 / uA, areas on the screen 12 exposed to the radiation from the beam are created

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during the deletion time in the order of magnitude of 10 / us accordingly healed and glow brightly compared to the extinguished areas.

On the side of the cathode ray tube 11 is a window 16, in the vicinity of which an ultraviolet light source, which "is indicated in the form of a sketch at 17, is attached.

When the screen 12 is irradiated with ultraviolet light, the information stored in the screen becomes as a result the contrast of the luminescence between the defective and the non-defective or healed regions.

Information stored in the screen in this way has a long life and can be repeated by irradiation can be reproduced with ultraviolet light. Certain parts of the information reproduced can be attributed to the can be brought up to date without other parts having to be destroyed.

Provided that the phosphor is electron luminescent an alternative technique for displaying the stored information is to display the entire screen with to flood a beam of electrons with a moderate total current. The terminal aa in Fig. 2 can be used to control the modulator Ma control to perform this function.

In relation to the example of Fig. 1 it should be mentioned that that the electronic control device controls the beam to an accuracy of 1 in 3000 in the particular mentioned Must control example. It should be noted that this is a minimum requirement since there is a whole bug for example daa neighboring bit instead of the addressed one

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Bits would be read. It is desirable that the control system for the example given have an accuracy on the order of magnitude of 1: 10000 should have. While such accuracies are found in comparable designs of electronic Control devices are required, such a degree of accuracy is not generally considered to be achievable, when direct diversion control is operated.

Up to this hatred limits the achievable accuracy the storage capacity of the electronic beam control device. However, it is a technique for achieving one high accuracy of control of electronic beams known, without strict requirements to be placed on the electronic control device. This is the so-called "Fly's eye", whereby the electron beam is deflected in two stages. "In the first stage, the electron beam is guided to a selected hole in a mask that has a precise array of holes. On the exit side of the mask is each hole with a separate further beam deflection system Mistake. For example, the mask can have an array of (128) holes in a right angle Matrix, and the second stage deflection system can be used to deflect a beam from one of the holes to a

for example (128) separate locations within an area in a matrix of separate areas

are arranged, each corresponding to one of the (128) holes in the mask.

The required accuracy for the first-stage deflection is thus in the order of 1 to 300 and to 500. With these accuracies for the second stage in the order of for example 1 sure L, _ 'l errors. This level of accuracy an electronic distraction control device

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are achieved and the "described arrangement would be a corresponding Provide beam steering for a memory with a capacity of approximately 268 χ 10 bits.

The way in which the "fly's eye" technique is used to control an electron beam for a binary memory may be used in accordance with the invention is shown in FIG.

In Fig. 3 components that correspond to those of FIG. 1, with corresponding reference numerals, which also have a Suffix b has been added.

■ A vacuum vessel Eb contains a miniature electron gun 2 B. The target of the gun is a phosphor in the form of a plate 4 "b made of potassium iodide doped with potassium Target 4b, the photocathode 6b, the pulse shaper and amplifier stage Ab and the readout terminal db correspond directly the arrangement of Fig. 1, as well as the modulator Mb with its control terminals ab, bb and cb.

The electron beam generated by the electron gun 2b however, is applied to the target 4b using a "fly's eye" system controlled, which has a primary X and Y deflection system 21 and 22, which is used to direct the beam on one of a plurality of holes 23 in a mask 24 is used.

The holes 23 are arranged in a rectangular matrix and machined very precisely to be uniformly spaced and size to ensure.

On the exit side of the mask, each hole has a miniature X-Y deflection system assigned. For drawing reasons

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is only one such miniature deflection system 25 and 26 shown.

With regard to the address of the beam control are separate appropriate deflection control signals are of course required for the two stages of beam deflection. Apart from that however, the mode of operation of the device according to FIG. 3 is exactly the same as that of FIG. 1.

Pig's facility. 3 can also be built into a system in which a single electronic control device controls a plurality of memories. A preferred one Arrangement for processing words of 32 bits would include 32 memories so that each bit of a word is in a separate one Memory stands and the whole arrangement could be operated simultaneously with regard to all bits of a word.

The invention is not limited to the details of the preceding examples. While for example Potassium iodide doped with thallium is the preferred phosphor for the memory according to FIGS. 1 and 3, and doped with manganese Potassium magnesium fluoride is the preferred phosphor for the combined storage and display device according to FIG. 2 other suitable phosphors can also be used.

In general, the phosphor, which is composed of a base material and a "contaminating" agent intended for the doping, The activator consists, as the basic material, of an alkali halide of an alkaline earth or a mixture or combination these groups contain, furthermore, the phosphor has the conditions enough that it is sufficiently "damaged" by electron irradiation and higher by means of an electron beam Density can be effectively cured. The last requirement

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implies a system in which defects quickly disappear when thermal or electronic excitation occurs. It is believed that the phosphor should be as simple a material as possible because it is a complicated material when it heals, it is less likely to return to its original state. It is desirable that the defects are stable at room temperature. In addition, a sufficient amount of effective luminescence at room temperature is required and for binary storage, an efficient energy transfer process that is quick and responsive is desirable has a large luminous efficacy. For visual reproduction, the speed of reproduction is not so important as the G-border is generally caused by the sluggishness of the eye. For visual reproduction it is desirable that the luminescent emission of the phosphor in the visible Part of the spectrum lies. For a binary store it is it is desirable that the emission be in a region of the spectrum where the detector (photocathode) is most sensitive.

It has been found that KI / Tl meet the above requirements for a binary memory is best enough. A slight disadvantage is that although the greater part of the Luminescence is fast, but a small part of the light is delayed / more slowly / emitted. This can be the case with certain Applications lead to difficulties.

It was found that KMgFa (Mn) have the above Requirements for a combined memory with visual reproduction are satisfactorily met.

With regard to the defect or damage process, it is noteworthy that such defects, for example can be generated by X-rays or protons instead of electrons. Electron radiation is, however, in the previous examples because of the greater ease of the

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Generation, focus and control used.

While the more intense electron beams to. Healing of the defect regions "is preferred, others can also Techniques, e.g. laser beam technology, are used, if desired and if the necessary punctures can be carried out with it.

If a relatively short life of storage is required (for example, when displaying radar display on fluorescent screens), an alternative technology can be used The mode of operation for combined storage and playback can be used as follows: The one coated with the phosphor The surface is continuously flooded with radiation that stimulates luminescence, for example ultraviolet radiation Light or electron radiation, while the information to be written is from a separate, focused electron beam is supplied, the intensity of which is sufficient to produce the defects in the phosphor. By choosing the right intensity the flood radiation and / or by placing a tin oxide film under the phosphor and electrical When this film is heated, the heat acting on the fluorescent material can be used, which is produced by the focused electron beam to heal defects generated relatively slowly.

It should be noted that the rate of decay of the stored information can be increased by controlling the heating can be adjusted.

The invention also relates to modifications of the embodiment outlined in the appended claim 1 and relates above all on all - <invention features that are included in the individually - or in combination - are disclosed throughout the description and drawing.

Claims

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Claims (1)

69 174 tw / h. 17th December 1969 Claims 1 · Method of storing information, thereby characterized in that areas of different degrees or states with regard to radiation defects on the surface a luminescent phosphor. 2ο procedure for storing information according to Claim 1, characterized in that the phosphor is electron luminescent. 3 ο method according to claim 1 or 2, characterized in that that in terms of high reading speed two sufficiently pronounced degrees of luminescence means of a scanning electron beam by the process of electronic radiation damage or defect generation and electron annealing can be used to store binary digital information. 4. The method according to claim 31, characterized in that that the writing of 1 - ^ 0 by means of a pulsed Electron beam is carried out, which has such an energy level and power per pulse that the temperature of the affected volume of the fluorescent about a few one hundred degrees Celsius rises, with optimal radiation damage or defect generation and minimal healing take place. 5. The method according to claim 4, characterized in that a pulsed electron beam for writing 0— ^ 1 is generated at a higher power level per pulse, so that the temperature of the volume concerned 009850/1806 of the luminescent material (which in the sense of the direction of writing 1 ^ "0 is damaged) until it is close to the melting point of the phosphor is increased. 6. The method according to claim 5, characterized in that the energy of the electron beam pulse for writing from 0- ^ M is only so large that only a fraction, however, at least half of the radiation defects can be healed. 7. The method according to any one of claims 4 to 6, using electron luminescent phosphor, thereby characterized in that the readout is effected by means of a pulsed electron beam, the intensity of which is small compared with that of the write beam for 1 -> 0, so that each of the defects or healed Set a small or a large photon pulse is derived. {8ij apparatus for carrying out the method according to einem'der preceding claims, characterized in that an electron gun (2, 2b) and an associated beam deflection system are provided, that a! Target (4, 4b) comprises a plate of luminescent phosphor of the electrons coming from the cannon (2, 2b) can be damaged or healed within the required time, and that a device (M, Mb) for pulsing the beam at different current values, a device (3, 21, 22, 24, 25, 26) for directing a beam of stimulating radiation onto the phosphor target (4 ″ b) and a device (6, 6b) which is sensitive to luminescence and serves to derive readout signals from the phosphor are provided. 009850/1806 9 β device according to claim 8, "in which the phosphor is electron luminescent, characterized in that reading out by exciting the luminescence with a Electron beam of low intensity is excited, which comes from the cannon (2, 2b). 1O ₉ device according to claim 8 or 9, characterized in that the cannon (2, 2b) and the target (4, 4b) are arranged in a vacuum chamber (E, Eb), while the luminescence-sensitive device (6, 6b) in a separate chamber (5, 5b) is arranged. 11 ο device according to one of claims 8 to 10, characterized in that the thickness of the phosphor (4, 4b) is of the order of 1 mm. 12. Device according to one of claims 8 to 11, characterized in that the phosphor (4, 4b) has a thin surface layer made of a metal with a high melting point is provided. 13. Device according to one of claims 8 to 12, characterized in that the sensitive to luminescence Device has a photocathode (6, 6b). 14. Device according to one of the preceding claims, in which for the combined storage and reproduction of information one with a luminescent Phosphor-coated surface is provided, characterized in that the luminescence of the phosphor can be extinguished locally by a radiation defect, which is generated, for example, by bombardment with an electron beam, and that a device (13 »Ma) for the formation of areas of different degrees of radiation defects of the phosphor on its upper 009850/1806 surface (12) and a device (16, 17 or 13, Ma) for Excitation of the luminescence of the phosphor are provided. 15. The device according to claim 14, characterized in that the phosphor is an electron luminescent Is fluorescent. 16 · Device according to claim 14 or 15, characterized characterized in that the phosphor is coated on the mold surface (12) of a cathode ray tube (11). 17β device according to claim 16, characterized in that that the electron beam generating and deflecting system (13, 14 »15) of the cathode ray tube (11) for Generation of controlled radiation defects or for the defect healing of the light-off surface. 18 · Device according to claim 16, "in which an electron luminescent Luminous material is provided, characterized in that the electron beam-generating and deflecting System (13,14,15) is used to reproduce the information stored on the ^ ohirm (12) by the Screen (12) is flooded with electron beams, whose intensity is moderate. 19 · Device according to one of claims 14 to 17, characterized in that a device (16, 17) for Irradiation of the fluorescent-coated surface (12) with ultraviolet light is provided 20. Apparatus according to claim 16 or 17, characterized in that the cathode ray tube (11) with a Window (16) and an ultraviolet lamp (17) which is arranged so that it passes through the screen (12) that window (16) is shining. 009850 / 180B 21 β device according to one of claims 14 "to 20, characterized in that the phosphor contains manganese having doped potassium-magnesium fluoride. 009850/1806