DE19615291C2 - Process for the selective epitaxial growth of Si or Si¶1¶-¶x¶Ge¶x¶ on structured Si (113) surfaces - Google Patents

Process for the selective epitaxial growth of Si or Si¶1¶-¶x¶Ge¶x¶ on structured Si (113) surfaces

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Publication number
DE19615291C2
DE19615291C2 DE19615291A DE19615291A DE19615291C2 DE 19615291 C2 DE19615291 C2 DE 19615291C2 DE 19615291 A DE19615291 A DE 19615291A DE 19615291 A DE19615291 A DE 19615291A DE 19615291 C2 DE19615291 C2 DE 19615291C2
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Prior art keywords
structured
epitaxial growth
selective epitaxial
sio
selective
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Expired - Fee Related
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DE19615291A
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German (de)
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DE19615291A1 (en
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Hans-Joachim Muessig
Jaroslaw Dabrowski
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INST HALBLEITERPHYSIK GmbH
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INST HALBLEITERPHYSIK GmbH
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/08—Germanium
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/52—Alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition

Description

Die Erfindung betrifft ein Verfahren zum selektiven epitaktischen Wachstum von Si oder Si1-xGex auf strukturierten Si(113)- Oberflächen.The invention relates to a method for the selective epitaxial growth of Si or Si 1-x Ge x on structured Si (113) surfaces.

Auf dem Weg zur Höchstintegration werden immer kleinere Halbleiterstrukturen angestrebt. Das bedeutet, daß die elektronische Struktur zunehmend empfindlicher auf die reale Geometrie reagiert. Je geordneter die Grenzflächen zwischen dem eigenschaftsbestimmenden Kern und der Matrix sind, desto idealer werden die Eigenschaften sein. Die Beeinflussung bzw. die Unterdrückung der Facettenbildung bei der selektiven Epitaxie für ULSI-Bauelemente (ultralarge-scale integrated) ist bisher nicht gelöst.On the way to maximum integration are getting smaller and smaller Semiconductor structures sought. That means that electronic structure increasingly sensitive to the real Geometry reacts. The more ordered the interfaces between the property-defining core and matrix, the more ideal will be the properties. The influence or the Suppression of facet formation in selective epitaxy for ULSI components (ultralarge-scale integrated) are not yet available solved.

Die Erfindung basiert auf der Beobachtung von H. Hirayama et. al., /Phys. Rev. B 48, 1993, S. 17331 ff/, daß die Wachstums­ geschwindigkeit von Si mittels UHV-CVD auf Si(001) größer als auf Si(113) ist sowie darauf, daß sich die Si(113)-Oberfläche wegen ihrer atomaren Glattheit, ihrer thermischen Stabilität und ihrer geringen Oberflächenenergie nach /J. Dabrowski, H.-J. Müssig, and G. Wolff, Phys. Rev. Lett. 73, 1994, S. 1660 ff./ als Substrat für das epitaktische Wachstum potentiell eignet.The invention is based on the observation by H. Hirayama et. al., / Phys. Rev. B 48, 1993, pp. 17331 ff / that the growth speed of Si using UHV-CVD on Si (001) greater than on Si (113) is as well as the fact that the Si (113) surface due to their atomic smoothness, their thermal stability and their low surface energy according to / J. Dabrowski, H.-J. Müssig, and G. Wolff, Phys. Rev. Lett. 73, 1994, p. 1660 ff./ as substrate for the epitaxial growth is potentially suitable.

Die allgemein praktizierte epitaktische oder heteroepitaktische Abscheidung von Si, Ge oder Si1-xGex auf Si(001)- oder Si(113)- Oberflächen wird desweiteren in EP 0 430 280 sowie von /J. Knall and J. B. Pethica in Surface Science 265 (1992) 156 167 North- Holland/ beschrieben. The generally practiced epitaxial or heteroepitaxial deposition of Si, Ge or Si 1-x Ge x on Si (001) or Si (113) surfaces is further described in EP 0 430 280 and by / J. Knall and JB Pethica in Surface Science 265 (1992) 156 167 North Holland /.

Der Erfindung liegt die Aufgabe zugrunde, die Wachstumskinetik für Si oder Si1-xGex auf Si-Wafern, die mit SiO2 strukturiert sind, so zu beeinflussen, daß die leeren Gräben zwischen den SiO2- Seitenwänden und den Facettenflächen der selektiv gewachsenen Si- oder Si1-xGex-Schichten kleiner werden bzw. verschwinden.The invention has for its object to influence the growth kinetics for Si or Si 1-x Ge x on Si wafers structured with SiO 2 in such a way that the empty trenches between the SiO 2 side walls and the facet surfaces of the selectively grown ones Si or Si 1-x Ge x layers become smaller or disappear.

Diese Aufgabe wird durch die kennzeichnenden Merkmale des Patent­ anspruches gelöst.This object is achieved through the characteristic features of the patent claim solved.

Die Erfindung soll nachstehend an Hand eines Ausführungsbei­ spieles näher erläutert werden:The invention is described below with the aid of an embodiment game are explained in more detail:

In den zugehörigen Zeichnungen zeigenShow in the accompanying drawings

Fig. 1. das selektive epitaktische Wachstum von Si oder Si1-xGex auf Si(001) nach bekanntem Stand der Technik und Fig. 1. the selective epitaxial growth of Si or Si 1-x Ge x on Si (001) according to known prior art and

Fig. 2. dasselbe erfindungsgemäß auf Si(113). Fig. 2. the same according to the invention on Si (113).

Wie aus Fig. 1(a) ersichtlich ist, bewirkt die im Vergleich zu Si(113) größere Wachstumsgeschwindigkeit auf Si(001), daß sich die (113)-Facettenflächen auf Kosten der (001)-Oberfläche vergrößern, wodurch große Zwischenräume und damit elektrisch nicht aktive Gebiete an den SiO2-Strukturkanten entstehen.As can be seen from Fig. 1 (a), the faster growth rate on Si (001) compared to Si (113) causes the (113) facet areas to increase at the expense of the (001) surface, causing large gaps and so that electrically inactive areas arise at the SiO 2 structure edges.

Da die Si(113)-Oberfläche eine geringe Oberflächenenergie besitzt, thermisch stabil und atomar glatt ist sowie ähnlich der Si(001)- Oberfläche hydriert bzw. oxydiert werden kann, ist sie ein geeignetes Substrat für das epitaktische Wachstum. Das neue Verfahren besteht darin, die selektive Epitaxie von Si oder Si1-xGex nicht wie bisher auf Si(001) sondern auf Si(113) durchzuführen. Das hat zur Folge, daß sich bei der Epitaxie die (113)-Oberfläche auf Kosten der (001)-Facettenflächen vergrößert und so die Entstehung von leeren Gräben zwischen den epitaktischen Schichten und den SiO2-Seitenwänden, wie in Fig. 2(b) dargestellt, vermieden werden kann.Since the Si (113) surface has a low surface energy, is thermally stable and atomically smooth and, like the Si (001) surface, can be hydrogenated or oxidized, it is a suitable substrate for epitaxial growth. The new method consists in performing the selective epitaxy of Si or Si 1-x Ge x not on Si (001) as before, but on Si (113). As a result, the (113) surface area in epitaxy increases at the expense of the (001) facet surface area and thus the formation of empty trenches between the epitaxial layers and the SiO 2 side walls, as in FIG. 2 (b ) can be avoided.

Claims (1)

Verfahren zum selektiven epitaktischen bzw. heteroepitak­ tischen Wachstum von Si oder Si1-xGex auf Si-Wafern, die mit SiO2 strukturiert sind, gekennzeichnet dadurch, daß die üblicherweise verwendete Si(001)-Substratorientierung durch die Si(113)-Orientierung ersetzt wird, so daß sich bei der selektiven Epitaxie von Si- oder Si1-xGex-Schichten auf Si(113) die (113)- Oberfläche auf Kosten der (001)-Facettenflächen vergrößert und so die Entstehung von leeren Gräben zwischen den epitaktischen Schichten und den SiO2-Seitenwänden vermieden werden kann.Process for the selective epitaxial or heteroepitaxial growth of Si or Si 1-x Ge x on Si wafers which are structured with SiO 2 , characterized in that the Si (001) substrate orientation usually used by the Si (113) - Orientation is replaced so that the selective epitaxy of Si or Si 1-x Ge x layers on Si (113) increases the (113) surface area at the expense of the (001) facet surfaces and thus the formation of empty trenches can be avoided between the epitaxial layers and the SiO 2 side walls.
DE19615291A 1996-04-18 1996-04-18 Process for the selective epitaxial growth of Si or Si¶1¶-¶x¶Ge¶x¶ on structured Si (113) surfaces Expired - Fee Related DE19615291C2 (en)

Priority Applications (1)

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DE19615291A DE19615291C2 (en) 1996-04-18 1996-04-18 Process for the selective epitaxial growth of Si or Si¶1¶-¶x¶Ge¶x¶ on structured Si (113) surfaces

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Application Number Priority Date Filing Date Title
DE19615291A DE19615291C2 (en) 1996-04-18 1996-04-18 Process for the selective epitaxial growth of Si or Si¶1¶-¶x¶Ge¶x¶ on structured Si (113) surfaces

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DE19615291A1 DE19615291A1 (en) 1997-10-23
DE19615291C2 true DE19615291C2 (en) 1999-07-22

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DE10205085B4 (en) * 2002-02-07 2006-03-23 Siltronic Ag Single crystal of silicon and process for its production

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0430280A2 (en) * 1989-12-01 1991-06-05 Hewlett-Packard Company Selective and non-selective deposition of Si1-x Gex on a Si substrate that is partially masked with Si O2

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0430280A2 (en) * 1989-12-01 1991-06-05 Hewlett-Packard Company Selective and non-selective deposition of Si1-x Gex on a Si substrate that is partially masked with Si O2

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
Knall J. et al.: Growth of Ge on Si (100) and Si (113) studied by STM. In: Surface Science, 1992, Vol.265, S.156-167 *
Phys. Rev. B 48, 1993, S.17331f *
Phys. Rev. Letters 73, 1994, S.1660f *

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