EP0000123A1 - Method for growing monocrystalline layers from the liquid phase by the sliding boat system. - Google Patents
Method for growing monocrystalline layers from the liquid phase by the sliding boat system. Download PDFInfo
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- EP0000123A1 EP0000123A1 EP78100110A EP78100110A EP0000123A1 EP 0000123 A1 EP0000123 A1 EP 0000123A1 EP 78100110 A EP78100110 A EP 78100110A EP 78100110 A EP78100110 A EP 78100110A EP 0000123 A1 EP0000123 A1 EP 0000123A1
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- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000007791 liquid phase Substances 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 73
- 239000000155 melt Substances 0.000 claims abstract description 54
- 238000000151 deposition Methods 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 9
- 238000000407 epitaxy Methods 0.000 claims abstract description 6
- 230000010363 phase shift Effects 0.000 claims abstract description 3
- 238000005137 deposition process Methods 0.000 claims abstract 2
- 239000013078 crystal Substances 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 17
- 238000001816 cooling Methods 0.000 description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 101100346656 Drosophila melanogaster strat gene Proteins 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000000289 melt material Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B09—DISPOSAL OF SOLID WASTE; RECLAMATION OF CONTAMINATED SOIL
- B09B—DISPOSAL OF SOLID WASTE NOT OTHERWISE PROVIDED FOR
- B09B1/00—Dumping solid waste
- B09B1/008—Subterranean disposal, e.g. in boreholes or subsurface fractures
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
- C30B19/063—Sliding boat system
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02395—Arsenides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02463—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/02546—Arsenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02625—Liquid deposition using melted materials
Definitions
- the invention relates to a method for depositing single-crystalline layers according to the liquid-phase shift epitaxy, as specified in the preamble of claim 1.
- a melt containing the material to be deposited is pushed onto the surface of a substrate with the aid of a slide and then by slightly cooling the: melt material deposited single-crystal on the substrate surface. As soon as the intended layer thickness of the single-crystalline layer is reached with the deposition, the remaining melt is pushed off the substrate surface or the grown epitaxial layer with the aid of the slide.
- Such a sliding epitaxy method and a device for carrying out this method are described, for example, in US Pat. No. 3,753,801.
- Layer sequences are usually produced using sliding devices in which the substrate disks are located in suitably designed depressions in a graphite “boat” and in which a movable slide is present which has several Has chambers for different melts of different compositions.
- the substrate disks are arranged one behind the other or concentrically at the same distance, and the chambers of the slide are also arranged one behind the other or concentrically with the corresponding distance.
- the melts are pushed one after the other over the respective substrate crystal, a single-crystal layer growing each time by cooling the melt by a certain amount of temperature.
- the thickness of the grown layer is determined by the size of the temperature drop in the melt and by the thickness of the melt above the sub strat and, unless the amount of dissolved substance corresponding to the lowering of temperature is completely deposited on the substrate, also determined by the cooling rate of the melt. If very thin layers are to be deposited on a substrate, then melts must be used for the deposition, which are saturated with the material of the substrate, so that when the melt is pushed on, there is no uncontrolled dissolution of the substrate crystal on its surface and, as a result, an uncontrolled one Layer growth occurs.
- the object of the invention is a method for separation to indicate the single-crystalline layers after the liquid-phase shift epitaxy, with which it is possible to provide a plurality of substrate wafers simultaneously with a multilayer structure without the need for such pre-substrates and which allows the number of chambers of the slide intended for the melt to be pushed on Reduce.
- the advantage of the method according to the invention is that the individual layers are deposited on the respective substrate wafers from the same melt, and that the temperature is reduced by the same amount for the individual melts. To control the thickness of the layer deposited in each case, the thickness of the melt located above the substrate wafer is varied accordingly.
- the respective melt from which the layer in question is to be deposited in single crystal remains on the substrate crystal until it is in equilibrium with it.
- the substrate wafers to be coated are arranged one behind the other in the apparatus used to carry out the method according to the invention at the same distance as the distance between the chambers of the slide provided for the melts.
- the substrate disks or the chambers provided for the melts can be linear or concentrated trical circles.
- a first melt is pushed onto a first substrate.
- the first melt can optionally have been brought into solution equilibrium via a pre-substrate.
- the arrangement is cooled by a certain temperature interval ⁇ t, which is, for example, approximately 1 ° C.
- Material that is dissolved in the melt is deposited epitaxially on the substrate surface.
- the melt is left on the substrate until the melt has reached the solution equilibrium prevailing at this new temperature, ie until the melt is exhausted for the deposition. It can be assumed that the growth out of the melt is determined by the diffusion of the substance dissolved in the melt, for example in the deposition of GaAs by the diffusion of the As in the Ga melt.
- the minimum residence time of the melt on the substrate after the cooling is completed by the equation where W max is the greatest thickness of the melt used for deposition and D is the diffusion coefficient of the dissolved material in the melt.
- W max is the greatest thickness of the melt used for deposition
- D is the diffusion coefficient of the dissolved material in the melt.
- ⁇ . ⁇ t «t min is fulfilled, where ⁇ is the cooling rate, At is the cooling interval. If the equation ⁇ ⁇ ⁇ > t min applies instead of this last equation, the minimum dwell time can be kept correspondingly lower after cooling. If the Abkühlgeschwin- held g di ness of the melt sufficiently small, could a holding time of the melt on the substrate without simultaneously lowering the temperature is even completely eliminated.
- the thickness of the each deposited layer is proportional to the thickness of the melt located above the respective substrate wafer.
- the thickness of the melt must be approximately 1 mm in order to grow a 1 / um thick GaAs layer, taking the hold time according to the equation with D approximately equal to 5.10 -5 cm sec -1 . must be about 200 sec.
- the first melt is then pushed onto the second substrate by sliding the slide; at the same time the second melt is then pushed onto the first substrate for the deposition of the second layer.
- the arrangement is then cooled again by the same amount of temperature, that is to say 1 ° C. in the example given.
- the first melt is then pushed onto the third substrate wafer, the second melt onto the second substrate wafer, and the third melt onto the first substrate wafer, and the entire arrangement is then cooled again by 1 ° C.
- FIG. 1 schematically shows the process for producing a 4-layer structure on GaAs substrates.
- the substrate disks 11, 12, 13, 14 and 15 are located in a "boat" 1, which consists, for example, of graphite.
- a slide 2 is placed, which contains four chambers in which the melts 21, 22, 23 and 24 are included.
- the thickness of the respective melts over the substrates is adjusted by the amount of the melt filled.
- Stamps 3 prevent the melt from contracting into a drop due to surface tension at small melt thicknesses.
- the slide is first in one position brought, in which the melt 21 is located above the substrate 11. A layer 111 is deposited on the substrate 11. The slide is then brought into the next position so that the melt 21 is above the substrate 12.
- the temperature of the arrangement is now again lowered by an amount of approximately 1 ° C.
- a layer 121 is deposited on the substrate 12 in a single crystal, and a layer 112 is deposited on the substrate 11 from the melt 22 now located above the substrate 11.
- the slide 2 ′ is again pushed in the direction of the arrow so that the melt 21 is now above the substrate 13. This state is shown in Fig.1.
- the first epitaxial layer then deposits on the substrate 13, the second epitaxial layer on the substrate 12 and the third epitaxial layer on the substrate 11.
- the slide 2 is again moved by one position so that the melt 21 is now above the substrate 14, the melt 24 is above the substrate 11.
- the process continues until all substrates are covered with a 4-layer structure.
- Fig. 2 shows the temperature profile of the entire arrangement.
- the initial temperature t A is, for example, 800 ° C. According to the existing number of substrates and the number of deposited layers takes place a gradual decrease in temperature by an amount At, for example, 1 0 C.
- the final temperature T E is a method in which ten substrate wafers with a 4-layer structure are coated, e.g. 15 ° lower than the initial temperature.
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- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Life Sciences & Earth Sciences (AREA)
- Environmental & Geological Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Verfahren zum Abscheiden jeweils mehrerer einkristalliner Schichten (111, 112, 121) gleichzeitig auf mehreren Substraten (11, 12, 13) nach dem Prinzip der Flüssigphasen-Schiebeepitaxie, wobei die abzuscheidenden Materialien in einzelnen Kammern (21, 22, 23) vorliegen und wobei sowohl die Substrate (11, 12, 13) als auch die Kammern (21, 22, 23) in gleichen Abständen voneinander angeordnet sind und bei einem jeden Abscheidevorgang die Temperatur aller sich jeweils auf einem Substrat (11, 12, 13) befindlichen Schmelzen um den gleichen Betrag gesenkt wird.Method for depositing several single-crystalline layers (111, 112, 121) simultaneously on multiple substrates (11, 12, 13) according to the principle of the liquid phase shift epitaxy, the materials to be deposited being present in individual chambers (21, 22, 23) and wherein Both the substrates (11, 12, 13) and the chambers (21, 22, 23) are arranged at equal distances from one another and the temperature of all the melts located on each substrate (11, 12, 13) during each deposition process the same amount is reduced.
Description
Die Erfindung betrifft ein Verfahren zum Abscheiden einkristalliner Schichten nach der Flüssigphasen-Schiebeepitaxie, wie es im Oberbegriff des Patentanspruches 1 näher angegeben ist.The invention relates to a method for depositing single-crystalline layers according to the liquid-phase shift epitaxy, as specified in the preamble of
Zur Herstellung bestimmter Halbleiterbauelemente, z.B. zur Herstellung von Lumineszenzdioden oder Laserdioden, ist es notwendig, auf einem Halbleiterkristall eine oder mehrere Schichten aus Halbleitermaterial epitaxial abzuscheiden. Insbesondere zur Herstellung von Halbleiterbauelementen aus intermetallischen III-V-Verbindungen und deren Mischkristalle wird dazu die Technik der Flüssigphasen-Schiebeepitaxie angewendet.For the manufacture of certain semiconductor devices, e.g. for the production of luminescent diodes or laser diodes, it is necessary to epitaxially deposit one or more layers of semiconductor material on a semiconductor crystal. In particular for the production of semiconductor components from intermetallic III-V compounds and their mixed crystals, the technique of liquid phase shift epitaxy is used.
Bei dieser Methode wird mit Hilfe eines Schiebers eine Schmelze, die das abzuscheidende Material enthält, auf die Oberfläche eines Substrates aufgeschoben und sodann durch leichtes Abkühlen der:Schmelze Material auf der Substratoberfläche einkristallin abgeschieden. Sobald mit dem Abscheiden die vorgesehene Schichtdicke der einkristallinen Schicht erreicht ist, wird mit Hilfe des Schiebers die restliche Schmelze von der Substratoberfläche bzw. der aufgewachsenen Epitaxieschicht abgeschoben. Ein solches Schiebeepitaxie-Verfahren sowie eine Vorrichtung zur Durchführung dieses Verfahrens sind beispielsweise in der US-Patentschrift 3 753 801 beschrieben. Zur Herstellung von kohärent und inkohärent strahlenden Doppelheterostruktur-Dioden, z.B. einer (Ga, Al) As-GaAs-Diode, sowie auch bei Mikrowellen-Bauelementen mit Heterostruktur ist es notwendig, aufeinander mehrere Schichten epitaxial abzuscheiden. Diese Schichten unterscheiden sich dabei in ihrer Zusammensetzung, z.B. bei einer GaAs-(GaAl)As-Schichtfolge, im Aluminiumgehalt.In this method, a melt containing the material to be deposited is pushed onto the surface of a substrate with the aid of a slide and then by slightly cooling the: melt material deposited single-crystal on the substrate surface. As soon as the intended layer thickness of the single-crystalline layer is reached with the deposition, the remaining melt is pushed off the substrate surface or the grown epitaxial layer with the aid of the slide. Such a sliding epitaxy method and a device for carrying out this method are described, for example, in US Pat. No. 3,753,801. To produce coherently and incoherently radiating double heterostructure diodes, for example a (Ga, Al) As-GaAs diode, and also in the case of microwave components with a heterostructure, it is necessary to epitaxially deposit several layers on top of one another. These layers differ in their composition, for example in the case of a GaAs (GaAl) As layer sequence, in the aluminum content.
Schichtfolgen, wie sie beispielsweise für Doppelheterostruktur-Laserdioden oder -Lumineszenzdioden benötigt werden, werden üblicherweise mit Schiebeapparaturen hergestellt, bei denen sich in einem Graphit-"Boot" in geeignet ausgebildeten Vertiefungen die Substratscheiben befinden, und bei denen ein beweglicher Schieber vorhanden ist, der mehrere Kammern für die verschiedenen Schmelzen unterschiedlicher Zusammensetzung aufweist. Die Substratscheiben sind dabei hintereinander oder konzentrisch im gleichen Abstand angeordnet, und die Kammern des Schiebers sind ebenfalls hintereinander oder konzentrisch mit dem entsprechenden Abstand angeordnet. Durch Weiterschieben-bzw. Drehen des Schiebers werden die Schmelzen nacheinander über den jeweiligen Substratkristall geschoben, wobei jedes Mal durch Abkühlen der Schmelze um einen gewissen Temperaturbetrag auf der Substratscheibe.eine einkristalline Schicht aufwächst. Die Dicke der aufgewachsenen-Schicht wird durch die Größe der Temperaturabsenkung der Schmelze und durch die Dicke der Schmelze über.dem Substrat und, sofern nicht die der Temperaturabsenkung entsprechende Menge gelöster Substanz zur Gänze auf dem Substrat abgeschieden wird, auch durch die Abkühlgeschwindigkeit der Schmelze festgelegt. Wenn auf einem Substrat sehr dünne Schichten abgeschieden werden sollen, so müssen zum Abscheiden Schmelzen verwendet werden., die mit dem Material des Substrates gesättigt sind, damit beim Aufschieben.der Schmelze nicht eine unkontrollierte Auflösung des Substratkristalles an seiner Oberfläche und als deren Folge ein unkontrolliertes Schichtwachstum auftritt. Eine exakte Sättigung der Schmelzen wird am einfachsten dadurch bewerkstelligt, daß die jeweils verwendete Schmelze durch genügend langes Verweilen auf einem Vorsubstrat in ein Lösungsgleichgewicht gebracht wird, bevor sie auf das eigentliche Substrat aufgeschoben wird. Bei Apparaturen, bei denen mehrere Substratscheiben gleichzeitig beschichtet werden sollen, muß für jede abzuscheidende Schicht einer jeden Substratscheibe eine gesonderte Kammer in dem Schieber vorgesehen werden. So müßte beispielsweise zur Herstellung einer 4-Schichtstruktur, bei der zur Abscheidung der einzelnen Schichten jeweils unterschiedliche Abkühlintervalle angewendet werden, ein Schieber eingesetzt werden, dessen Kammerzahl 4 mal so groß ist'wie die Zahl der zu beschichtenden Substratscheiben. Dies würde bereits bei einer kleineren Zahl von Substratscheiben zu einer sehr komplizierten Konstruktion des Schiebers bzw. des "Bootes" führen. Ferner könnte die hohe Kammerzahl bei der Beschickung dieser "Boote" leicht zu Fehlern führen. Schließlich ist wegen der Notwendigkeit von Vorsubstraten bei diesem Verfahren die doppelte Anzahl von Substratscheiben erforderlich, was die Kosten.des Verfahrens zusätzlich erhöht.Layer sequences, as are required, for example, for double heterostructure laser diodes or luminescent diodes, are usually produced using sliding devices in which the substrate disks are located in suitably designed depressions in a graphite “boat” and in which a movable slide is present which has several Has chambers for different melts of different compositions. The substrate disks are arranged one behind the other or concentrically at the same distance, and the chambers of the slide are also arranged one behind the other or concentrically with the corresponding distance. By pushing or Rotating the slide, the melts are pushed one after the other over the respective substrate crystal, a single-crystal layer growing each time by cooling the melt by a certain amount of temperature. The thickness of the grown layer is determined by the size of the temperature drop in the melt and by the thickness of the melt above the sub strat and, unless the amount of dissolved substance corresponding to the lowering of temperature is completely deposited on the substrate, also determined by the cooling rate of the melt. If very thin layers are to be deposited on a substrate, then melts must be used for the deposition, which are saturated with the material of the substrate, so that when the melt is pushed on, there is no uncontrolled dissolution of the substrate crystal on its surface and, as a result, an uncontrolled one Layer growth occurs. The easiest way to achieve exact saturation of the melts is to bring the melt used in each case into a solution equilibrium by lingering on a pre-substrate for a sufficiently long time before it is pushed onto the actual substrate. In the case of apparatuses in which a plurality of substrate wafers are to be coated at the same time, a separate chamber must be provided in the slide for each layer to be deposited on each substrate wafer. For example, to produce a 4-layer structure in which different cooling intervals are used to deposit the individual layers, a slide would have to be used, the number of chambers of which is 4 times as large as the number of substrate wafers to be coated. Even with a smaller number of substrate disks, this would lead to a very complicated construction of the slide or the "boat". Furthermore, the high number of chambers when loading these "boats" could easily lead to errors. Finally, because of the need for pre-substrates, this method requires twice the number of substrate wafers, which increases the cost of the method.
Aufgabe der Erfindung ist es, ein Verfahren zum Abscheiden einkristalliner Schichten nach der Flüssigphasen-Schiebeepitaxie anzugeben, mit dem es möglich ist, mehrere Substratscheiben gleichzeitig mit einer Vielschicht-Struktur zu versehen, ohne daß derartige Vorsubstrate notwendig sind und das es erlaubt, die Zahl der für die aufzuschiebenden Schmelzen vorgesehenen Kammern des Schiebers zu vermindern.The object of the invention is a method for separation to indicate the single-crystalline layers after the liquid-phase shift epitaxy, with which it is possible to provide a plurality of substrate wafers simultaneously with a multilayer structure without the need for such pre-substrates and which allows the number of chambers of the slide intended for the melt to be pushed on Reduce.
Diese Aufgabe wird bei einem wie im Oberbegriff des Patentanspruches 1 angegebenen Verfahren erfindungsgemäß nach der im kennzeichnenden Teil des Patentanspruches 1 angegebenen Weise gelöst.This object is achieved in a method as specified in the preamble of
Vorteilhafte Ausgestaltungen der Erfindung sind in den Unteransprüchen angegeben.Advantageous embodiments of the invention are specified in the subclaims.
Der Vorteil des erfindungsgemäßen Verfahrens besteht einmal darin, daß die einzelnen Schichten auf den jeweiligen Substratscheiben jeweils aus derselben Schmelze abgeschieden werden, und daß weiterhin die Ttmperaturabsen- kung.für die einzelnen Schmelzen jeweils um den gleichen Betrag erfolgt. Zur Steuerung der Dicke der jeweils abgeschiedenen Schicht wird die Dicke der über der Substratscheibe befindlichen Schmelze entsprechend variiert.The advantage of the method according to the invention is that the individual layers are deposited on the respective substrate wafers from the same melt, and that the temperature is reduced by the same amount for the individual melts. To control the thickness of the layer deposited in each case, the thickness of the melt located above the substrate wafer is varied accordingly.
Die jeweilige Schmelze, aus der heraus die betreffende Schicht einkristallin abgeschieden werden soll, verbleibt solange auf dem Substratkristall, bis sie sich mit diesem im Gleichgewicht befindet. Die zu beschichtenden Substratscheiben sind in der für die Durchführung des erfindungsgemäßen Verfahrens verwendeten Apparatur hintereinander im gleichen Abstand wie der Abstand der für die Schmelzen vorgesehenen Kammern des Schiebers angeordnet. Die Substratscheiben bzw. die.für die Schmelzen vorgesehenen Kammern können linear oder auch auf konzentrischen Kreisen angeordnet sein.The respective melt from which the layer in question is to be deposited in single crystal remains on the substrate crystal until it is in equilibrium with it. The substrate wafers to be coated are arranged one behind the other in the apparatus used to carry out the method according to the invention at the same distance as the distance between the chambers of the slide provided for the melts. The substrate disks or the chambers provided for the melts can be linear or concentrated trical circles.
Zum Abscheiden der ersten einkristallinen Schichten wird eine erste Schmelze auf ein erstes Substrat aufgeschoben. Die erste Schmelze kann gegebenenfalls auch über ein Vorsubstrat in das Lösungsgleichgewicht gebracht worden sein. Nachdem die erste Schmelze auf das erste Substrat aufgeschoben worden-ist, wird die Anordnung um ein bestimmtes Temperaturintervall Δt, das beispielsweise etwa 1°C beträgt, abgekühlt. Dabei scheidet sich Material, das in der Schmelze gelöst ist, auf der Substratoberfläche epitaktisch ab. Die Schmleze wird solange auf dem Substrat belassen, bis die Schmelze das bei dieser neuen Temperatur herrschende Lösungsgleichgewicht erreicht hat, d.h. bis die Schmelze für die Abscheidung erschöpft ist. Man kann davon ausgehen, daß das Wachstum aus der Schmelze heraus durch die Diffusion des in der Schmelze gelösten Stoffes bestimmt wird, beispielsweise bei der Abscheidung von GaAs durch die Diffusion des As in der Ga-Schmelze. In diesem Falle ist die Mindestverweilzeit der Schmelze auf dem Substrat nach Abschluß der Abkühlung durch die Gleichung
Im folgenden wird die Erfindung anhand eines in den Figuren dargestellten Ausführungsbeispiels beschrieben und näher erläutert.The invention is described and explained in more detail below with reference to an exemplary embodiment shown in the figures.
- Fig.1 zeigt schematisch die für die Durchführung des erfindungsgemäßen Verfahrens verwendete Apparatur,1 shows schematically the apparatus used to carry out the method according to the invention,
- Fig.2 zeigt schematisch, wie die Temperatur der gesamten Anordnung zur Abscheidung einzelner Schichten auf den jeweiligen Substratscheiben abgesenkt werden wird.2 shows schematically how the temperature of the entire arrangement for depositing individual layers on the respective substrate wafers will be reduced.
Fig.1 zeigt schematisch den Verfahrensgang zur Herstellung einer 4-Schichtstruktur auf GaAs-Substraten. In einem "Boot" 1, das beispielsweise aus Graphit besteht, befinden sich die Substratscheiben 11, 12, 13, 14 und 15. Auf diesem Boot 1 ist ein Schieber 2 aufgesetzt, der vier Kammern enthält, in denen die Schmelzen 21, 22, 23 und 24 enthalten sind. Die Dicke der jeweiligen Schmelzen über den Substraten wird durch die Menge der eingefüllten Schmelze eingestellt. Mit Stempeln 3 wird verhindert, daß bei kleinen Schmelzdicken sich die Schmelze aufgrund Oberflächenspannung zu einem Tropfen zusammenzieht. Zum Abscheiden einer 4-Schichtstruktur auf den Substraten wird der Schieber zunächst in eine Position gebracht, bei der sich über dem Substrat 11 die Schmelze 21 befindet. Dabei wird auf dem Substrat 11 eine Schicht 111 abgeschieden. Sodann wird der Schieber in die nächste Position gebracht, so daß die Schmelze 21 sich über dem Substrat 12 befindet. Die Temperatur der Anordnung wird jetzt wiederum um einen Betrag von etwa 1°C abge aenkt. Dabei scheidet sich auf dem Substrat 12 eine Schicht 121 einkristallin ab, aus der jetzt über dem Substrat 11 befindlichen Schmelze 22 scheidet sich eine Schicht 112 auf dem Substrat 11 ab. Im nächsten Verfahrensschritt wird der Schieber 2'wiederum in Pfeilrichtung weitergeschoben, so daß die Schmelze 21 sich jetzt über dem Substrat 13 befindet. Dieser Zustand ist in Fig.1 dargestellt. Die Temperatur der Anordnung wird wiederum um dew Betrag Δt = 1°C abgesenkt. Dabei scheidet sich auf dem Substrat 13 dann die erste epitaxiale Schicht, auf dem Substrat 12 die zweite und auf dem Substrat 11 die dritte epitaxiale Schicht ab. Danach wird der Schieber 2 wiederum um eine Stellung weitergeschoben, so daß die Schmelze 21 nun über dem Substrat 14, die Schmelze 24 über dem Substrat 11 vorhanden ist. In entsprechender Weise wird fortgefahren, bis alle Substrate mit einer 4-Schichtstruktur überzogen sind.1 schematically shows the process for producing a 4-layer structure on GaAs substrates. The
Fig.2 zeigt den Temperaturverlauf der gesamten Anordnung. Die Anfangstemperatur tA beträgt beispielsweise 800°C. Entsprechend der vorhandenen Anzahl von Substraten sowie der Zahl der abzuscheidenden Schichten erfolgt eine schrittweise Temperaturabsenkung jeweils um einen Betrag Δt, beispielsweise um 10C. Die Endtemperatur tE liegt bei einem Verfahren, bei dem zehn Substratscheiben mit einer 4-Schichtstruktur überzogen werden, beispielsweise 15° tiefer als die Anfangstemperatur.Fig. 2 shows the temperature profile of the entire arrangement. The initial temperature t A is, for example, 800 ° C. According to the existing number of substrates and the number of deposited layers takes place a gradual decrease in temperature by an amount At, for example, 1 0 C. The final temperature T E is a method in which ten substrate wafers with a 4-layer structure are coated, e.g. 15 ° lower than the initial temperature.
Claims (5)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2730358A DE2730358C3 (en) | 1977-07-05 | 1977-07-05 | Process for the successive deposition of monocrystalline layers on a substrate according to liquid phase shift epitaxy |
DE2730358 | 1977-07-05 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0000123A1 true EP0000123A1 (en) | 1979-01-10 |
EP0000123B1 EP0000123B1 (en) | 1981-02-25 |
Family
ID=6013202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP78100110A Expired EP0000123B1 (en) | 1977-07-05 | 1978-06-07 | Method for growing monocrystalline layers from the liquid phase by the sliding boat system. |
Country Status (6)
Country | Link |
---|---|
US (1) | US4149914A (en) |
EP (1) | EP0000123B1 (en) |
JP (1) | JPS5414669A (en) |
CA (1) | CA1116312A (en) |
DE (1) | DE2730358C3 (en) |
IT (1) | IT1096839B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7712315A (en) * | 1977-11-09 | 1979-05-11 | Philips Nv | METHOD FOR EPITAXIAL DEPOSITION OF SEVERAL LAYERS. |
DE3036643C2 (en) * | 1980-09-29 | 1984-09-20 | Siemens AG, 1000 Berlin und 8000 München | Device for liquid phase epitaxy |
US4319937A (en) * | 1980-11-12 | 1982-03-16 | University Of Illinois Foundation | Homogeneous liquid phase epitaxial growth of heterojunction materials |
US4342148A (en) * | 1981-02-04 | 1982-08-03 | Northern Telecom Limited | Contemporaneous fabrication of double heterostructure light emitting diodes and laser diodes using liquid phase epitaxy |
US4547230A (en) * | 1984-07-30 | 1985-10-15 | The United States Of America As Represented By The Secretary Of The Air Force | LPE Semiconductor material transfer method |
JPH07115987B2 (en) * | 1986-09-26 | 1995-12-13 | 徳三 助川 | Fabrication of superstructures and multilayers |
TW460604B (en) * | 1998-10-13 | 2001-10-21 | Winbond Electronics Corp | A one-sided and mass production method of liquid phase deposition |
CN102995115B (en) * | 2012-12-27 | 2015-07-29 | 中国电子科技集团公司第十一研究所 | A kind of graphite boat for rheotaxial growth and liquid-phase epitaxial growth process |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE28140E (en) * | 1971-11-29 | 1974-08-27 | Bergh ctal | |
US3899137A (en) * | 1974-12-17 | 1975-08-12 | Martin Shenker | Cleaning device for photo-slides |
US3933538A (en) * | 1972-01-18 | 1976-01-20 | Sumitomo Electric Industries, Ltd. | Method and apparatus for production of liquid phase epitaxial layers of semiconductors |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE788374A (en) * | 1971-12-08 | 1973-01-02 | Rca Corp | PROCESS FOR DEPOSITING AN EPITAXIAL LAYER OF A SEMICONDUCTOR MATERIAL ON THE SURFACE OF A SUBSTRATE |
GB1414060A (en) * | 1972-07-28 | 1975-11-12 | Matsushita Electronics Corp | Semoconductor devices |
JPS5342230B2 (en) * | 1972-10-19 | 1978-11-09 | ||
US3899371A (en) * | 1973-06-25 | 1975-08-12 | Rca Corp | Method of forming PN junctions by liquid phase epitaxy |
US4028148A (en) * | 1974-12-20 | 1977-06-07 | Nippon Telegraph And Telephone Public Corporation | Method of epitaxially growing a laminate semiconductor layer in liquid phase |
US4032951A (en) * | 1976-04-13 | 1977-06-28 | Bell Telephone Laboratories, Incorporated | Growth of iii-v layers containing arsenic, antimony and phosphorus, and device uses |
-
1977
- 1977-07-05 DE DE2730358A patent/DE2730358C3/en not_active Expired
-
1978
- 1978-06-07 EP EP78100110A patent/EP0000123B1/en not_active Expired
- 1978-06-09 US US05/914,167 patent/US4149914A/en not_active Expired - Lifetime
- 1978-06-30 IT IT25180/78A patent/IT1096839B/en active
- 1978-07-03 JP JP8083378A patent/JPS5414669A/en active Granted
- 1978-07-04 CA CA000306752A patent/CA1116312A/en not_active Expired
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
USRE28140E (en) * | 1971-11-29 | 1974-08-27 | Bergh ctal | |
US3933538A (en) * | 1972-01-18 | 1976-01-20 | Sumitomo Electric Industries, Ltd. | Method and apparatus for production of liquid phase epitaxial layers of semiconductors |
US3899137A (en) * | 1974-12-17 | 1975-08-12 | Martin Shenker | Cleaning device for photo-slides |
Non-Patent Citations (1)
Title |
---|
INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, vol. 19, nr. 4, Punkt 2, 1976, S.G. ZHILENIS et al " Cassette for batch growth of layers by the liquid-epitaxy method", Seiten 1221 bis 1222 * |
Also Published As
Publication number | Publication date |
---|---|
JPS6235260B2 (en) | 1987-07-31 |
DE2730358C3 (en) | 1982-03-18 |
DE2730358B2 (en) | 1981-05-27 |
EP0000123B1 (en) | 1981-02-25 |
DE2730358A1 (en) | 1979-01-11 |
IT1096839B (en) | 1985-08-26 |
CA1116312A (en) | 1982-01-12 |
IT7825180A0 (en) | 1978-06-30 |
JPS5414669A (en) | 1979-02-03 |
US4149914A (en) | 1979-04-17 |
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