DE1913855A1 - Metalloxidhalbleiter- oder Metallisolatorhalbleiter-Photodioden - Google Patents
Metalloxidhalbleiter- oder Metallisolatorhalbleiter-PhotodiodenInfo
- Publication number
- DE1913855A1 DE1913855A1 DE19691913855 DE1913855A DE1913855A1 DE 1913855 A1 DE1913855 A1 DE 1913855A1 DE 19691913855 DE19691913855 DE 19691913855 DE 1913855 A DE1913855 A DE 1913855A DE 1913855 A1 DE1913855 A1 DE 1913855A1
- Authority
- DE
- Germany
- Prior art keywords
- source
- metal
- photodiodes
- semiconductor
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000012212 insulator Substances 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000002184 metal Substances 0.000 title description 3
- 229910044991 metal oxide Inorganic materials 0.000 title description 3
- 150000004706 metal oxides Chemical class 0.000 title description 3
- 239000000758 substrate Substances 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/112—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor
- H01L31/113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor
- H01L31/1136—Devices sensitive to infrared, visible or ultraviolet radiation characterised by field-effect operation, e.g. junction field-effect phototransistor being of the conductor-insulator-semiconductor type, e.g. metal-insulator-semiconductor field-effect transistor the device being a metal-insulator-semiconductor field-effect transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR144509 | 1968-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1913855A1 true DE1913855A1 (de) | 1969-10-16 |
Family
ID=8647729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691913855 Pending DE1913855A1 (de) | 1968-03-20 | 1969-03-19 | Metalloxidhalbleiter- oder Metallisolatorhalbleiter-Photodioden |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1913855A1 (nl) |
| FR (1) | FR1566558A (nl) |
| NL (1) | NL6904337A (nl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577047A (en) * | 1969-01-15 | 1971-05-04 | Ibm | Field effect device |
| CA1106477A (en) * | 1972-07-10 | 1981-08-04 | Carlo H. Sequin | Overflow channel for charge transfer imaging devices |
-
1968
- 1968-03-20 FR FR1566558D patent/FR1566558A/fr not_active Expired
-
1969
- 1969-03-19 DE DE19691913855 patent/DE1913855A1/de active Pending
- 1969-03-20 NL NL6904337A patent/NL6904337A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6904337A (nl) | 1969-09-23 |
| FR1566558A (nl) | 1969-05-09 |
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