DE1913855A1 - Metalloxidhalbleiter- oder Metallisolatorhalbleiter-Photodioden - Google Patents
Metalloxidhalbleiter- oder Metallisolatorhalbleiter-PhotodiodenInfo
- Publication number
- DE1913855A1 DE1913855A1 DE19691913855 DE1913855A DE1913855A1 DE 1913855 A1 DE1913855 A1 DE 1913855A1 DE 19691913855 DE19691913855 DE 19691913855 DE 1913855 A DE1913855 A DE 1913855A DE 1913855 A1 DE1913855 A1 DE 1913855A1
- Authority
- DE
- Germany
- Prior art keywords
- source
- metal
- photodiodes
- semiconductor
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
- H10F30/282—Insulated-gate field-effect transistors [IGFET], e.g. MISFET [metal-insulator-semiconductor field-effect transistor] phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR144509 | 1968-03-20 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1913855A1 true DE1913855A1 (de) | 1969-10-16 |
Family
ID=8647729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19691913855 Pending DE1913855A1 (de) | 1968-03-20 | 1969-03-19 | Metalloxidhalbleiter- oder Metallisolatorhalbleiter-Photodioden |
Country Status (3)
| Country | Link |
|---|---|
| DE (1) | DE1913855A1 (enrdf_load_stackoverflow) |
| FR (1) | FR1566558A (enrdf_load_stackoverflow) |
| NL (1) | NL6904337A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3577047A (en) * | 1969-01-15 | 1971-05-04 | Ibm | Field effect device |
| CA1106477A (en) * | 1972-07-10 | 1981-08-04 | Carlo H. Sequin | Overflow channel for charge transfer imaging devices |
-
1968
- 1968-03-20 FR FR144509A patent/FR1566558A/fr not_active Expired
-
1969
- 1969-03-19 DE DE19691913855 patent/DE1913855A1/de active Pending
- 1969-03-20 NL NL6904337A patent/NL6904337A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6904337A (enrdf_load_stackoverflow) | 1969-09-23 |
| FR1566558A (enrdf_load_stackoverflow) | 1969-05-09 |
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