DE1764756C3 - - Google Patents

Info

Publication number
DE1764756C3
DE1764756C3 DE1764756A DE1764756A DE1764756C3 DE 1764756 C3 DE1764756 C3 DE 1764756C3 DE 1764756 A DE1764756 A DE 1764756A DE 1764756 A DE1764756 A DE 1764756A DE 1764756 C3 DE1764756 C3 DE 1764756C3
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1764756A
Other languages
German (de)
Other versions
DE1764756A1 (de
DE1764756B2 (de
Inventor
Albert Sidney Trenton N.J. Waxman (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE1764756A1 publication Critical patent/DE1764756A1/de
Publication of DE1764756B2 publication Critical patent/DE1764756B2/de
Application granted granted Critical
Publication of DE1764756C3 publication Critical patent/DE1764756C3/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6319—Formation by plasma treatments, e.g. plasma oxidation of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6324—Formation by anodic treatments, e.g. anodic oxidation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6938—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides
    • H10P14/6939—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal
    • H10P14/69391—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides characterised by the metal the material containing aluminium, e.g. Al2O3
DE19681764756 1967-08-04 1968-07-31 Verfahren zur herstellung eines duennfilm-feldeffekt-bauelementes Granted DE1764756B2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US65854167A 1967-08-04 1967-08-04

Publications (3)

Publication Number Publication Date
DE1764756A1 DE1764756A1 (de) 1972-01-13
DE1764756B2 DE1764756B2 (de) 1973-07-19
DE1764756C3 true DE1764756C3 (enExample) 1974-02-21

Family

ID=24641673

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19681764756 Granted DE1764756B2 (de) 1967-08-04 1968-07-31 Verfahren zur herstellung eines duennfilm-feldeffekt-bauelementes

Country Status (3)

Country Link
DE (1) DE1764756B2 (enExample)
FR (1) FR1572063A (enExample)
GB (1) GB1161647A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7608958A (nl) * 1975-08-29 1977-03-02 Westinghouse Electric Corp Dunne film transistorinrichting.
DE2704312A1 (de) * 1976-08-20 1978-02-23 Westinghouse Electric Corp Duennschicht-transistoreinrichtung
US4115799A (en) * 1977-01-26 1978-09-19 Westinghouse Electric Corp. Thin film copper transition between aluminum and indium copper films
JPS58100461A (ja) * 1981-12-10 1983-06-15 Japan Electronic Ind Dev Assoc<Jeida> 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
GB1161647A (en) 1969-08-13
FR1572063A (enExample) 1969-06-20
DE1764756A1 (de) 1972-01-13
DE1764756B2 (de) 1973-07-19

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)