DE1733396U - SEMI-CONDUCTOR DEVICE. - Google Patents

Description

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Semiconductor device,

The firing is based on a semiconductor device, in particular on an Eristall ^ leji ^ hsiaib ± .sr jxLer «amplifier ₉ whose envelope consists entirely of metal and is filled with a suitable, preferably insulating, liquid ο Metal sleeve and liquid filling are s _: B _{a used} there _? where the semiconductor contacts or even the crystal during operation are subject to considerable warming, which can make the device unusable or at least severely limit its load-bearing capacity, especially with low-melting semiconductors. fl.y.eJeta.11_hfn se by thermal conduction to dissipate the heat harmful contribute Me liquid is selected so that it engages _s neither electrically nor in contact with it parts of the apparatus passes substantially *

But even with the use of highly insulating liquids, it cannot be used. Threshing floor id en _? that these liquids detach metal from the sleeve and other parts of the semiconductor device, even if only to a small extent. Is the semiconductor material "less noble"? Doh, in the series of voltages further to the left than the dissolved metal, the latter can be deposited on the semiconductor surface in exchange for semiconductor material and thereby noticeably worsen the properties of the device ο This phenomenon has been observed with the relatively base germanium been. But the same danger also exists in other AEEN mostly similar base semiconductors that are used in ICristalldioden or enhancers under a heat dissipating liquid "One might indeed sleeves

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SAF / Reg. 676

Use glass or some other insulator; as they are already known for crystal semiconductor devices; but must be wief who accept a considerable deterioration in heat dissipation,

According to the innovation, it is therefore proposed; to coat the metal parts of the semiconductor device, which are contacted by the liquid to the exclusion or inclusion of the semiconductor crystal itself with a dense layer of a suitable insulating coating or with a metal that is not nobler than the semiconductor itself _f. Consists of semiconductors such as germanium, so apart from germanium, silicon, alkaline earth metals, antimony / arsenic or similar non-precious materials can even be used to coat the metal parts _B These substances can "Although in.lösung go to a small extent? But will not * by / electrochemical reactions on the semiconductor surface ^ precipitate, it must be ensured that the coating according to the innovation is not significantly attacked by the liquid.

A double safeguard against the observed deficiency is obtained, even if the semiconductor crystal is coated with a layer of lacquer ο In terms of the! Price increase, is it also? if with tip diodes or transistors, the contacts in a known manner after 'setting with a drop of a suitable varnish ^ Resin or wax can be fixed ^

A tip transistor? in which the coating agents proposed by the innovation are used, the attached drawing shows in section as an example. The metal cylinder 1 is closed with an antimony cover ^ -4! ^ Xa £ hsn__u5td - audL- on one side by a metal plug 3 on which a germanium crystal 4 "is conductively attached * On the other side an insulator forms _{f> i} plug 5 with the bushings for the tip electrodes 6 the

Closure, the electrodes 6 are coated with insulating varnish -7, are ^. the Z ₀ B. set through the window 8 in the cylinder 1 and fixed with the resin droplet 9 * after coating the crystal 4 and the metal plug 5 with the lacquer layer 10, the insulating liquid 11 is "filled" and the window 8 with a suitable one Isolierstoffverschlosse.no -. ^

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Until control is also in other pormen _? as in the drawing dargestellts- realizable particular also for area = rectifier and ₀ allows Uoa without this the Gefa.hr suspend junction transistors applicable ₀ one effective liquid cooling of Halbleiterkon = taktej> deterioration by elektrooliemisehe influences =

Attachments ^

"5 hats
1 Blο drawing

■ - 4

Claims (5)

'*' ■ ■■ '■' ■ '■:' ■ ^Λ - ϊ- ■ -. iA.i4189M3.E6 -; - .; "'if s- 676-. ■: - ■ '■■ . ■ ■ - .. ".; .. - ■■ -, '.''"·'. ■ ■. '■' ■ '■ - ^ Söhutzansgrüche ^ 1,) Semiconductor device, in particular crystal rectifier or amplifier, the casing of which consists entirely or partially of metal and is filled with a suitable, preferably insulating liquid, characterized in that the "metal parts" of the device wetted by the liquid with. are coated with an agent which is not deposited on the semiconductor surface by electrochemical reactions. '. ... ^; . '''. 2.) Semiconductor device. according to claim 1, characterized in, - That the coating on the metal parts is made of a dense Iso-. ■ · -Lier layer consists of «· - ■ ' -' - ^; . - * _: ·. ■ /: 3.) Semiconductor device "according to, claim 1; · ^.: Characterized in that <■ 'the coating on * den'Metallteile made of the same material how the semiconductor crystal anoints. '' -. ".- 4 ".) Semiconductor device according to claim 1, characterized in that the coating on the metal parts made of an equally base or less noble metal than the semiconductor crystal, for example 'wise Ge, Si or from Brdalkalien, Antimony or. Arsenic exists. 5.) Semiconductor device according to claim Ί, characterized in that • that the "coatings proposed in claims 2-4 combined are * "■. (Dr »Bso) Fu, / Ha. 29.2 "56"