DE1613968A1 - Fuse with fusible link for electrical system parts, especially semiconductor elements - Google Patents

Fuse with fusible link for electrical system parts, especially semiconductor elements

Info

Publication number
DE1613968A1
DE1613968A1 DE19681613968 DE1613968A DE1613968A1 DE 1613968 A1 DE1613968 A1 DE 1613968A1 DE 19681613968 DE19681613968 DE 19681613968 DE 1613968 A DE1613968 A DE 1613968A DE 1613968 A1 DE1613968 A1 DE 1613968A1
Authority
DE
Germany
Prior art keywords
fusible link
fuse
electrical
electrical system
housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19681613968
Other languages
German (de)
Inventor
Dipl-El-Ing Bossi Hans Juerg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri France SA
Original Assignee
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri France SA filed Critical BBC Brown Boveri France SA
Publication of DE1613968A1 publication Critical patent/DE1613968A1/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/074Stacked arrangements of non-apertured devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01HELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H37/00Thermally-actuated switches
    • H01H37/74Switches in which only the opening movement or only the closing movement of a contact is effected by heating or cooling
    • H01H37/76Contact member actuated by melting of fusible material, actuated due to burning of combustible material or due to explosion of explosive material
    • H01H37/767Normally open
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Combustion & Propulsion (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Fuses (AREA)
  • Emergency Protection Circuit Devices (AREA)

Description

Schmelzsicherung mit Schmelzlot f - ür elektrische Anla-,o:,*enteile Halbleiterelemente Die Erfindung betrifft ein---Schmelzsi-ch,-,:#runo, mit Schmelzlat für elektrische Anlagent--ile,-insb--esondere Halble - iterblemente welche mit der Sicheruno, in einem gemeinsamen Gehäuse -zusam- mengebaut sind. Es Ist bekannt, ein elektrisches Gerät durch Kurzschliessen zu schü+.--zen,. Ferner gibt es Schmelzsicherungen, die einen Kontakt beim Schmelzen-,Überbrücken (zp 818 977)a Hierbei wird ein--Schm41z- metall vorgesehen, das im f esten -z".,-ustande in der- Nähe des Kon- taktes liegt und das in fl-Ussigem Zust-ande Über die Kontaktstrecke fliesst und-dadurch den Kontakt. schliels-St. DiesesSehmelzl,ot kann. hierbei durch die-Umgebungstemperatur als Temperatursicherung C2 wirken, wenn die Umgebungstemperatur zu gross wird- es kann aber auch lmZtroir2#"reis eingeschaltet sein, so da-ss es be-i-zu.hohen Strömen oder zu hoher Spannung durchsehmilzt und dann den Kontakt schliesst oder öffnet. Fuse with fusible f - ÜR electric plant-, o:, fleeth * Semiconductor elements The invention relates to a --- Schmelzsi-ch, -,: # runo, with Schmelzlat for electrical Anlagent - ile, -insb - pecial Halble - iterblemente which with the security of being in a common housing -together- are built. It is known to close an electrical device by short-circuiting it schü + .-- zen ,. There are also fuses that have a contact when melting, bridging (zp 818 977) a Here a - Schm41z- metal provided, which in most f -z ", -. ustande in DER near the con- clock lies and that in a liquid state over the contact path flows and thereby the contact. Schliels-St. This Sehmelzl, ot can. here by the ambient temperature as a temperature fuse C2 act when the ambient temperature is too high- but it can lmZtroir2 # "reis must also be switched on, so that it be-i-zu.high Current or too high voltage melted through and then the contact closes or opens.

Man hat auch schon vorgeschlagen, ein zu schützendes Gerät durch einen gesteuerten Stromrichter kurzzuschliessen, wobei der Steuerimpuls durch eine elektrische Grösse verursacht wird und den Stromrichter durchlässig macht (Schweiz.Pat. 429 926). It has also already been proposed to short-circuit a device to be protected by a controlled converter, the control pulse being caused by an electrical variable and making the converter permeable (Swiss Pat. 429 926).

Bei hohen Spannungen werden Stromrichterelemente,beispielsweise Thyristoren, in Reihe geschaltet. Zur Ableitung von Ueberspannunsen in gesperrtem Zustande werden entgegengesetzt in Reihe geschaltete CD avalanche-Dioden.parallel geschaltet. Es kann nun der Fall eintreten, CD dass bei einem Thyristorglied dieser Kette die Zündung nicht richtig CD C> arbeitet und dieses-Glied dann gesperrt bleibt, während die anderen W - Glieder der Kette leitend werden. Dann müsste der-gesamte Strom der Kette statt durch den-Thyristor über die avalanche-Dioden fliessen. Dies kann zur Zerstörung dieser Dioden führen. In diesem Falle sind beide Teile der avalanche-Dioden sehr g-,fährdet, die in Sperrrichtun3 gepolte Diode wird-in einem solchen Falle sofort zerstört, die andere in Durchlassrichtung liegende Diode überlastet.At high voltages, power converter elements, for example thyristors, are connected in series. In order to dissipate excess voltages in the blocked state, CD avalanche diodes connected in opposite directions are connected in parallel. It may now be the case that in a CD Thyristorglied this chain ignition incorrect CD C> works and this element will be locked while the other W - members are conducting the chain. Then the entire current of the chain would have to flow through the avalanche diodes instead of through the thyristor. This can destroy these diodes. In this case, both parts of the avalanche diodes are very dangerous, the reverse-biased diode is immediately destroyed and the other forward-biased diode is overloaded.

Zur Vermeidung dieses Nachteiles und unter Verwendung von Schmelzsicherungen, welche einen Kontakt kurzschliessen und mit dem betreffenden Anlageteil"in diesem Fall der avalanche-Dioden.. in einem Gehäuse zusammengebaut sind,- wird erfindungsgemäss vorgeschlagen, das. sehen iß in dem Gehäuse eln-Hohlraun, vor& Jn. welchem Anfang und Ende des elektrizehen Gerätes hineinragen, da-ss das Schmelzlot in festem Zustande diesem Hohlraum angeordnet ist# to--dass das Schme@1zIot beim Durch#sclwelgen in diesen.Hohlr hineinfliesst und,- das elektrische Gerät kwzsbhliesst. Die riguren zeigen ein Ausf U eL e spie der- Erfin-du#pg, Es, sind zwei entfec-,en,-",esetzt in-,Reihe Zepchaltete Äval-.anch.ei#Dioden darge- stellt, welche in ein.-,e#m Ge4äu###se pit der Sicherung 11 gep Es kön#n e en aber auch andere- elektrizch,.e Iggeteile a- f diese Weiße ># schützt werden, Die FJ.--. 1 zeigt die Ziehältu#n- D er TIi.yr-,izt#,or 14 der bei- .U.r spielsweise.zu ei.ner- -ist du. entgegegge- setzt in'Re:U,.e evalanche-Dioden 2 &egen Uebe-r,.zpanr-,nung ge- scht'Itzt. Diese wiederuni z in d du r e h die B,#,cherung- -3 ge U, pn. -- g,#e, n eberz trom gesIchert, DIeze 8;L#,icherun#lz ist zo a u-,s ge f un r t , -.dass -s ie durch den durch d ie, DIoden hindurch#fUe,--seer#iden Strom erwärmt wind und dann "derart du 1, elzt-, 2 -,e "llu f ür ##,d i e Dioden dar- stellt. # m? sei -n e# er (gie im daz 0 eh Uuvse de, r !Dlc,d,e.n eip au -Zt." e- v k-, t man aus der- j## 2-,- Beidle iLoden e 1 gi, d m ie, de r jm i- t 2 ete :'t z tt der SU--, d#az ße#,m -Z- bezeicUnet, 4,er Zteom il -,u- v*,)?b A##e Z leitungeg 6 dient"" Z#nt,"er- 41.en- e 4 VIt ie4 geg#rem# 7" ,v,o..r,gezehei#x; DM-e eus ibezt#nliendie *Jagd 4.es ß eih,41, tte #4 J.,st perforiert, besitzt also- Löcher. Wenn nun das Lot durchsehmilzt, so kann es durch- diese Löcher in den Hohlraum 7 fliessen. Dadurch entsteht- ei:ne unmittelbare Verbindung von der einen Anschlussfahne 6 über die Behälter -4, das Im -Hohlraum 7 befindliche Schmelzlot 5 zum anderen Behälter 4 und der anderen Anschlussfahne 6. Die Dioden sind also dann kurzgeschlossen. Dieser Zustand ist in der Figur gezeigt; dort befindet sich das Schmelzlot 5 im Hohlraum 7, Das Ganze ist In-ein Kunststoffgehäuse 8 eingebettet.To avoid this disadvantage and using fuses which short-circuit a contact and are assembled in a housing with the relevant system part "in this case the avalanche diodes .., - it is proposed according to the invention that. see eat in the housing eln-Hohlraun, in front of & Jn. which beginning and Elektrizehen end of the device protrude, since the fusible link in-ss solid state this cavity is arranged # to - that the Schme @ 1zIot when through # smwelgen in this.Hohlr flows into and, - the electrical device closes. The rigures show an Ausf U eL e spie der- Invention-du # pg, It, are two dis-, en, - ", esetzt in, row Zepchelte Äval-.anch.ei # diodes shown sets which in a .-, e # m Ge4äu ### se pit of the fuse 11 can be e en but also other electrical and electronic parts a- f this white ># protects be, The FJ .--. 1 shows the Ziehältu # n T he TIi.yr-, izt #, or 14 of the examples .Ur for example.to a.ner- you are opposite sets in'Re: U, .e evalanche diodes 2 & egen Uebe-r, .zpanr-, voltage ge protects. This wiederuni z d in re du h B, #, cherung- -3 ge U, pn. - g, # e, n eberz trom secured, DIeze 8; L #, icherun # lz is zo a u-, s ge f un rt , -that -s ie through the ie by d, diodes through # R & D, - seer # identical current heats the wind, and then "so you 1, elzt-, 2 -, e "llu f or ##, diodes d ie DAR represents. # m? be -n e # er (gie im daz 0 eh Uuvse the ! Dlc, d, en eip au -Zt. "E- v k-, t one from the- j ## 2 -, - Beidle iLoden e 1 gi, d m ie, de r jm i- t 2 ete : 't z tt der SU--, d # az ße #, m -Z- denoted, 4, er Zteom il -, u- v *,)? b A ## e Z line 6 serves "" Z # nt, "er 41.en- e 4 VIt ie4 g # rem # 7" , v, o..r, gezei # x; DM-e eus ibezt # nliendie * Jagd 4.es ß eih, 41, tte # 4 y., St perforated, so it has holes. When the solder now melts through, it can flow through these holes into the cavity 7 . This creates a direct connection from one connection lug 6 via the container 4, the fusible link 5 located in the cavity 7 to the other container 4 and the other connection lug 6. The diodes are then short-circuited. This state is shown in the figure; The fusible link 5 is located there in the cavity 7. The whole is embedded in a plastic housing 8.

Die Wirkungsweise Ist folgende Wird der Thyristor 1, welcher in einer Thyristorkette liegt, nicht gezUndet, während die in Reihe liegenden Thyristoren gezündet werden, so entsteht an den entgegengesetzt in Reihe liegenden avalanche-Dioden 2 eine hohe Spannung. Diese zündet daher in beiden Richtungen und der ganze durch die Thyristoren-' kette fliessehde Strom muss durch die avalan-che-Dioden fliessen. Diese werden dadurch -stark überlastet werden. Der Strom geht dann auch über das Schmelzlot 5 auf beiden Seiten der avalanche-Dioden und schmilzt es. Es fliesst dann durch die Oeffnungen des Behälters 4 nach unten. -Beide Schmelzlote kommen dadurch zusammen Und schliessen damit die Diode kurz. Dadurch- kann die ganze #Kette den Strom unbeschadet des nicht gezUhdeten Thyristors und der parallel liegenden avalanche-Dioden weiterführen. Solche Anordnungen -sind auch bei and eren elektrischen Geräten mÖglich, wenn diese gegen Ueberlast zu schützen sind. Tritt eine solche Ueberlas-tung beispielsweise bei Messinstrumenten-auf.. so schliesst das schmelzende Lot-das Gerät kurz. Auch an Spannung liegende Geräte.kUnnen dadurch geschUtzt werden" wobei dann durch den Kurzschluss--ein'.Schalter daie Gerät abschaltet.-The mode of operation is as follows: If the thyristor 1, which is located in a thyristor chain, is not ignited while the thyristors in series are ignited, a high voltage is generated at the avalanche diodes 2 in opposite series. This ignites in both directions and the entire current flowing through the thyristor chain must flow through the avalanche diodes. As a result, they will be heavily overloaded. The current then also goes through the fusible link 5 on both sides of the avalanche diodes and melts it. It then flows down through the openings of the container 4. -Both fusible links come together and short-circuit the diode. As a result, the entire chain can continue to carry the current without prejudice to the non-fired thyristor and the parallel avalanche diodes. Such arrangements - are also at older and electrical equipment possible if they are to be protected against overload. If such an overload occurs, for example, in measuring instruments ... the melting solder short-circuits the device. Devices that are connected to voltage can also be protected in this way.

Claims (1)

.P a t e n t a n s p r U c h e ehmelzsicherung mit Schmelzlot für elektrische Anlagenteile insbesondprQ Halbleiter#el-emehte., welche mit der Sicherung in einem gemeinsamen Gehäuse zUsammengäbaut sind., dadurch Eekennzeichnet, dass In dem Gehäuse (8) ein Hohlraum (7) vorgesehen ist, in welchen Anfang und Ende des*elektrischen Gerätes (2) hineinragen.."das;s das Schmelzlot (5) in festem-Zustand Über diesem-:Hohlraum (7) angeordnet ist, so dass das 8'Chm.eizlot-(5) beim Durohschmelzen.in dlesen.Hohlraum (7),hineinfliesst und das elektrische 2) -Schmelzsicher'Ung,- nach Anspruch 1":. dadurch SekennzeLchnet, dass -der Hohlraue l(7) U-förmig- ausgeftHirt ist und je ein Schmelzlot Uber den Enden des-Hohlraumes angeordnet i.st und das s zwischen-Lot und Hohlraum eine perforierte Zwischenwand v-orgezehien-ist,9 3) Schmelzsicherung nach Anspruch 2, dadurch gekennzeichnet"dass die perfofierte Zwischenwand aus Metall besteht und elektrisch je mit 'der zum elektrischen Anlageteil (2) verbunden ist. Zuleitung (6 4) Schmelzeie herunr, nach Anspruch 1, dadurch gekennzeichnet-,t dass der elektrische Anlageteil (2) mit dem Schmelzlot (5) in einem Nunststofrgehäuse untergebracht ist,.P atentans p r U C HE ehmelzsicherung with fusible link for electrical equipments insbesondprQ semiconductor # el-emehte., Which are zUsammengäbaut with the fuse in a common housing. Characterized Eekennzeichnet that in the housing (8), a cavity (7) provided is, in which the beginning and end of the * electrical device (2) protrude .. "that; s the fusible link (5) in the solid state Above this-: cavity (7) is arranged so that the 8'Chm.eizlot- (5) during Durohschmelzen.in dlesen.Hohlraum (7), flows into it and the electrical 2) -schmelzicherung'Ung, - according to claim 1 ":. This means that the hollow ridge (7) is U-shaped and a fusible link is arranged over the ends of the hollow space and the intermediate solder and hollow space is a perforated partition, 9 3 ) melting fuse according to claim 2, characterized in "that the perfofierte intermediate wall consists of metal and is each electrically connected 'of the electrical system part (2). supply line (6 4) Schmelzeie herunr according to claim 1, gekennzeichnet- fact t that the electrical system part (2) with the fusible link (5) is housed in a plastic housing,
DE19681613968 1967-12-04 1968-01-15 Fuse with fusible link for electrical system parts, especially semiconductor elements Pending DE1613968A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH1692367A CH466427A (en) 1967-12-04 1967-12-04 Fuses with fusible links for electrical devices, in particular semiconductor elements

Publications (1)

Publication Number Publication Date
DE1613968A1 true DE1613968A1 (en) 1971-06-03

Family

ID=4421383

Family Applications (2)

Application Number Title Priority Date Filing Date
DE1968@@6608558U Expired DE6608558U (en) 1967-12-04 1968-01-15 FUSION FUSE WITH FUSIBLE SOLDER FOR ELECTRICAL SYSTEM COMPONENTS IN PARTICULAR SEMICONDUCTOR ELEMENTS
DE19681613968 Pending DE1613968A1 (en) 1967-12-04 1968-01-15 Fuse with fusible link for electrical system parts, especially semiconductor elements

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE1968@@6608558U Expired DE6608558U (en) 1967-12-04 1968-01-15 FUSION FUSE WITH FUSIBLE SOLDER FOR ELECTRICAL SYSTEM COMPONENTS IN PARTICULAR SEMICONDUCTOR ELEMENTS

Country Status (2)

Country Link
CH (1) CH466427A (en)
DE (2) DE6608558U (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985004045A1 (en) * 1984-03-05 1985-09-12 Hughes Aircraft Company Thermally-activated, shorting diode switch having non-operationally-alternable junction path
EP0170088A1 (en) * 1984-07-17 1986-02-05 Asea Brown Boveri Aktiengesellschaft By-pass element
EP0170883A1 (en) * 1984-07-17 1986-02-12 Asea Brown Boveri Aktiengesellschaft By-pass element
FR2737605A1 (en) * 1995-08-03 1997-02-07 Europ Agence Spatiale THERMALLY ACTIVE SHORT CIRCUIT SWITCH FOR A BATTERY CELL
DE102015222939A1 (en) * 2015-11-20 2017-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Electrical bridging device for bridging electrical components, in particular an energy source or an energy consumer
DE102017218906A1 (en) * 2017-10-24 2019-04-25 Robert Bosch Gmbh Electrical bridging element, electrical energy storage and device

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US4709253A (en) * 1986-05-02 1987-11-24 Amp Incorporated Surface mountable diode
US8743525B2 (en) 2012-06-19 2014-06-03 Raycap Intellectual Property, Ltd Overvoltage protection devices including wafer of varistor material
US9906017B2 (en) 2014-06-03 2018-02-27 Ripd Research And Ip Development Ltd. Modular overvoltage protection units
US10319545B2 (en) 2016-11-30 2019-06-11 Iskra Za{hacek over (s)}{hacek over (c)}ite d.o.o. Surge protective device modules and DIN rail device systems including same
US10447026B2 (en) 2016-12-23 2019-10-15 Ripd Ip Development Ltd Devices for active overvoltage protection
US10707678B2 (en) 2016-12-23 2020-07-07 Ripd Research And Ip Development Ltd. Overvoltage protection device including multiple varistor wafers
US10340110B2 (en) 2017-05-12 2019-07-02 Raycap IP Development Ltd Surge protective device modules including integral thermal disconnect mechanisms and methods including same
US10685767B2 (en) 2017-09-14 2020-06-16 Raycap IP Development Ltd Surge protective device modules and systems including same
US11223200B2 (en) 2018-07-26 2022-01-11 Ripd Ip Development Ltd Surge protective devices, circuits, modules and systems including same
US11862967B2 (en) 2021-09-13 2024-01-02 Raycap, S.A. Surge protective device assembly modules
US11723145B2 (en) 2021-09-20 2023-08-08 Raycap IP Development Ltd PCB-mountable surge protective device modules and SPD circuit systems and methods including same
US11990745B2 (en) 2022-01-12 2024-05-21 Raycap IP Development Ltd Methods and systems for remote monitoring of surge protective devices

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1985004045A1 (en) * 1984-03-05 1985-09-12 Hughes Aircraft Company Thermally-activated, shorting diode switch having non-operationally-alternable junction path
JPH0666406B2 (en) * 1984-03-05 1994-08-24 ヒューズ・エアクラウト・カンパニー Diode switch that is activated by heat and shorts
EP0170088A1 (en) * 1984-07-17 1986-02-05 Asea Brown Boveri Aktiengesellschaft By-pass element
EP0170883A1 (en) * 1984-07-17 1986-02-12 Asea Brown Boveri Aktiengesellschaft By-pass element
FR2737605A1 (en) * 1995-08-03 1997-02-07 Europ Agence Spatiale THERMALLY ACTIVE SHORT CIRCUIT SWITCH FOR A BATTERY CELL
US5898356A (en) * 1995-08-03 1999-04-27 Agence Spatiale Europeenne Thermally-activated switch for short-circuiting a battery cell
DE102015222939A1 (en) * 2015-11-20 2017-05-24 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Electrical bridging device for bridging electrical components, in particular an energy source or an energy consumer
US10763595B1 (en) 2015-11-20 2020-09-01 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Electrical bridging device for bridging electrical components, in particular an energy source or an energy consumer
DE102017218906A1 (en) * 2017-10-24 2019-04-25 Robert Bosch Gmbh Electrical bridging element, electrical energy storage and device

Also Published As

Publication number Publication date
CH466427A (en) 1968-12-15
DE6608558U (en) 1971-09-16

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