DE1514422B2 - Process for the series production of semiconductor components - Google Patents

Process for the series production of semiconductor components

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Publication number
DE1514422B2
DE1514422B2 DE1514422A DES0096206A DE1514422B2 DE 1514422 B2 DE1514422 B2 DE 1514422B2 DE 1514422 A DE1514422 A DE 1514422A DE S0096206 A DES0096206 A DE S0096206A DE 1514422 B2 DE1514422 B2 DE 1514422B2
Authority
DE
Germany
Prior art keywords
semiconductor components
connections
components
carrier body
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE1514422A
Other languages
German (de)
Other versions
DE1514422A1 (en
Inventor
Fritz-Werner Dipl.Chem.Dr. Kenilworth Court Calif. Beyerlein (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE1514422A priority Critical patent/DE1514422B2/en
Publication of DE1514422A1 publication Critical patent/DE1514422A1/en
Publication of DE1514422B2 publication Critical patent/DE1514422B2/en
Granted legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
    • H01L21/4842—Mechanical treatment, e.g. punching, cutting, deforming, cold welding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01068—Erbium [Er]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Description

3 43 4

mehrere Halbleiterbauelemente mit einer Verguß- spielsweise vergoldeter FeNiCo-Legierung, bestehen-several semiconductor components with a potting - for example gold-plated FeNiCo alloy, consist-

masse versehen werden. Zum Vergießen werden den Trägerkörper 2 nach einem bekannten Legierver-mass are provided. For casting, the carrier body 2 is made according to a known alloy casting

hauptsächlich gießbare Kunststoffe, niedrigschmel- fahren aufgebracht. Die zu kontaktierenden HaIb-mainly castable plastics, applied with low melting point. The Halb-

zende Gläser und auch keramische Massen verwen- leiterbauelemente 1 werden dann mittels eines anZende glasses and also ceramic materials are used conductor components 1 by means of a

det. 5 sich bekannten Verfahrens, z. B. durch Thermokom-det. 5 known method, for. B. by thermocouple

Das Umhüllen der Halbleiterbauelemente kann pression, mit den Kontaktierungsdrähten 3 und 4, dieThe sheathing of the semiconductor components can pression, with the contacting wires 3 and 4, the

auch in einem Formkörper vorgenommen werden, aus Gold, Aluminium, Silber oder anderen Metall-can also be made in a molded body, made of gold, aluminum, silver or other metal

bei dem gleichzeitig mehrere Bauelemente mit einer drahten bestehen, versehen.in which there are several components with a wire at the same time.

Vergußmasse versehen werden und wobei der Form- In F i g. 2 wird gezeigt, wie gemäß der Lehre der körper so ausgebildet ist, daß er sowohl als Gießform io Erfindung mit Hilfe einer Vorrichtung eine (7) die als auch als Gehäusebestandteil nach entsprechender mit den beiden anderen (5 und 6) in einer Ebene lie-Zerteilung der Halbleiterbauelemente dient. In die- genden Elektroden, in dem hier beschriebenen Aussem Falle werden vorwiegend Formkörper verwen- führungsbeispiel die Elektrode 7, durch Verformung det, die aus einem gleichartigen Material, insbeson- des Trägerkörpers in eine Stellung gebracht ist, die dere aus einem aushärtbaren Kunststoff, Vorzugs- 15 sich von der Ebene der in der Ausgangsstellung beweise Epoxidharz, bestehen, wie die Vergußmassen. findlichen Elektroden 5 und 6 um einen Winkel bei-Casting compound are provided and the form- In F i g. 2 shows how, according to the teaching of body is designed so that it can be used both as a mold io invention with the help of a device (7) the as well as a housing component according to the same with the other two (5 and 6) in one level lie-subdivision which serves semiconductor components. In the following electrodes, in the exterior described here Traps are predominantly shaped bodies using the electrode 7, for example, by deformation det, which is made of a material of the same type, in particular the carrier body, is brought into a position which those made of a hardenable plastic, preferably 15 different from the level of the evidence in the starting position Epoxy resin, like the potting compounds. sensitive electrodes 5 and 6 at an angle

Das Verfahren gemäß der Erfindung beschränkt spielsweise von etwa 90° unterscheidet. Dabei versieh nicht nur auf die Herstellung von Halbleiterbau- kürzt sich die Entfernung zwischen der Elektrode 5 elementen, wie Mikroplanartransistoren, sondern und 7, wobei der Kontaktierungsdraht 4, des auf den läßt sich in gleich vorteilhafter Weise auch auf die 20 Trägerkörper 2 auflegierten Halbleiterbauelements 1 Herstellung von mehrpoligen Bauelementen, wie etwas stärker durchgebogen wird, als der Kontaktiez. B. integrierten Schaltungen, Heißleitern, Hallgene- rungsdraht3.
ratoren usw. anwenden. F i g. 3 veranschaulicht, wie zum Schutz gegen äu-The method according to the invention is limited, for example, by about 90 °. The distance between the electrode 5 elements, such as microplanar transistors, is shortened not only to the manufacture of semiconductor components, but also 7 and 7, whereby the contacting wire 4 of the can also be used in an equally advantageous manner on the semiconductor component 1 alloyed onto the carrier body 2 Manufacture of multi-pole components, like something more bent than the Kontaktiez. B. integrated circuits, NTC thermistors, Hall generation wire3.
use rators etc. F i g. 3 illustrates how to protect against external

Nähere Einzelheiten gehen aus dem an Hand der ßere atmosphärische Einflüsse und zur Erhöhung derFurther details go from the hand of the ßere atmospheric influences and to increase the

F i g. 1 bis 4 beschriebenen Ausführungsbeispiel her- 25 Stabilität die Halbleiterbauelemente und die Verbin-F i g. 1 to 4 described embodiment her- 25 stability the semiconductor components and the connec-

vor. dungsstellen zwischen den Kontaktierungsdrähtenbefore. connection points between the contacting wires

In F i g. 1 ist in Draufsicht ein mit mehreren Halb- und den Anschlüssen mit einer niedrigschmelzenden, leiterbauelementen 1 versehener Trägerkörper 2 aus- bei der Betriebstemperatur, jies herzustellenden Bauschnittweise dargestellt, an dem entsprechend der elements festen Vergußmasse umhüllt worden ist und Anzahl der äußeren Elektroden des zu fertigenden 30 die vergossene Stirnseite 8 abgetrennt wurde.
Bauelements — am Ausführungsbeispiel sind es drei Die Halbleiterbauelemente 9 und 10, die der in Elektroden — drahtförmige elektrische An- F i g. 4 angegebenen Konfiguration der Elektroden Schlüsse5,6 und7, z.B. aus einer FeNiCo-Legie- entsprechen, wurden nach dem Aushärten der Verrung, angepunktet sind. Die Halbleiterbauelemente 1 gußmasse durch entsprechendes Schneiden oder Säwerden auf den aus Kontaktierungsmaterial, bei- 35 gen erhalten.In Fig. 1 shows a top view of a carrier body 2 provided with several semiconductors and the connections with a low-melting, conductor components 1 from the operating temperature, each structural section to be produced, on which solid potting compound has been encased according to the elements and the number of outer electrodes of the to be produced 30 the encapsulated end face 8 was separated.
Component - in the exemplary embodiment there are three The semiconductor components 9 and 10, which in electrodes - wire-shaped electrical connection. 4 specified configuration of the electrodes conclusions 5, 6 and 7, for example from a FeNiCo alloy, were spotted after the hardening of the Verrung. The semiconductor components 1 casting compound are obtained by appropriate cutting or sawing on the parts made of contacting material.

Hierzu 1 Blatt Zeichnungen1 sheet of drawings

Claims (6)

1 2 sondere aus einem aushärtbaren Kunststoff, vorPatentansprüche· zugsweise Epoxidharz, besteht wie die Vergußmasse.1 2 is made of a curable plastic, preferably epoxy resin, like the potting compound. 1. Verfahren zur Serienfertigung von Halb- 51. Procedure for series production of semi-5 leiterbauelementen oder Mikroschaltungen, bei Die Zusatzanmeldung P 15 14 412.4-33 beziehtladder components or microcircuits, with additional application P 15 14 412.4-33 dem ein als Transportband während der Herstel- sich auf ein Verfahren zur Serienfertigung von HaIblung der Halbleiterbauelemente dienender leiterbauelementen oder Mikroschaltungen, bei dem Trägerkörper aus Kontaktierungsmaterial ver- ein als Transportband während der Herstellung der wendet wird, der entsprechend einem den erfor- io Halbleiterbauelemente dienender Trägerkörper aus derlichen Anschlüssen für die zu fertigenden Kontaktierungsmaterial verwendet wird, der entspre-Halbleiterbauelemente angepaßten Raster mit pe- chend einem den erforderlichen Anschlüssen für die riodisch wiederkehrenden Einschnitten, insbeson- zu fertigenden Halbleiterbauelemente angepaßten dere durch Ausstanzen, versehen ist, bei dem Raster mit periodisch wiederkehrenden Einschnitten, weiterhin drahtförmige, elektrische Anschlüsse, 15 insbesondere durch Ausstanzen, versehen ist, bei deren Anzahl durch die Zahl der äußeren Elek- dem weiterhin drahtförmige, elektrische Anschlüsse, troden der zu fertigenden Halbleiterbauelemente deren Anzahl durch die Zahl der äußeren Elektroden bestimmt ist, an den jeweiligen Stellen des der zu fertigenden Halbleiterbauelemente bestimmt Trägerkörpers, die als Elektroden ausgebildet ist, an den jeweiligen Stellen des Trägerkörpers, die sind, angebracht werden, bei dem dann die Halb- 20 als Elektroden ausgebildet sind, angebracht werden, leiterbauelemente auf dem Trägerkörper aufle- bei dem dann die Halbleiterbauelemente auf dem giert und die Kontaktierungsdrähte mit den An- Trägerkörper auflegiert und die Kontaktierungsschlüssen verbunden werden, wonach die Halb- drähte mit den Anschlüssen verbunden werden, woleiterbauelemente und die Verbindungsstellen nach die Halbleiterbauelemente und die Verbinzwischen Kontaktierungsdrähten und den An- 25 dungsstellen zwischen Kontaktierungsdrähte und den Schlüssen mit einer niedrigschmelzenden, bei der Anschlüssen mit einer niedrigschmelzenden, bei der Betriebstemperatur des herzustellenden Bauele- Betriebstemperatur des herzustellenden Bauelements ments festen Vergußmasse umhüllt werden, wo- festen Vergußmasse umhüllt werden, wobei die bei die drahtförmigen elektrischen Anschlüsse drahtförmigen elektrischen Anschlüsse aus dem veraus dem vergossenen Bauelement herausragen, 30 gossenen Bauelement herausragen, und bei dem in und bei dem in einem abschließenden. Arbeits- einem abschließenden Arbeitsgang Trägerkörper und gang Trägerkörper und Anschlüsse zerteilt wer- Anschlüsse zerteilt werden.the one as a conveyor belt during the manufacturing process for the series production of halves the semiconductor components serving conductor components or microcircuits, in which Carrier bodies made of contacting material act as a conveyor belt during the manufacture of the is used, which corresponds to a carrier body serving the required semiconductor components Such connections are used for the contacting material to be manufactured, the corresponding semiconductor components adapted grid with corresponding one of the necessary connections for the periodically recurring incisions, in particular semiconductor components to be manufactured which is provided by punching, in the grid with periodically recurring incisions, furthermore, wire-shaped electrical connections 15 are provided, in particular by punching out the number of which is determined by the number of external electrodes, furthermore wire-shaped electrical connections, The number of semiconductor components to be manufactured depends on the number of external electrodes is determined, determined at the respective points of the semiconductor components to be manufactured Carrier body, which is designed as electrodes, at the respective points of the carrier body that are attached, in which the half-20s are designed as electrodes, are attached, Conductor components on the carrier body in which the semiconductor components are then placed on the yaws and the contacting wires are alloyed with the carrier body and the contacting connections are connected, after which the half-wires are connected to the terminals, woleiterbauelemente and the connection points after the semiconductor components and the connections between them Contacting wires and the application points between the contacting wires and the Connections with a low-melting point for connections with a low-melting point for Operating temperature of the component to be manufactured Operating temperature of the component to be manufactured ments solid potting compound are enveloped, solid potting compound are enveloped, the in the wire-shaped electrical connections wire-shaped electrical connections from the veraus protrude from the molded component, protrude 30 molded component, and in the case of the in and the one in a final. Work a final work step support body and Aisle carrier body and connections are divided, connections are divided. den, nach Zusatzanmeldung P 15 14 412, da- Aufgabe der Erfindung ist es, ein rationelles Ver-the, according to additional application P 15 14 412, because the object of the invention is to provide a rational durch gekennzeichnet, daß nach der fahren anzugeben, das es erlaubt, eine Vielzahl von Kontaktierung der Halbleiterbauelemente mit 35 Halbleiterbauelementen, insbesondere von Mikroden äußeren elektrischen Anschlüssen eine der Planartransistoren, herzustellen unter Verwendung mit den beiden anderen in einer Ebene liegenden eines Trägerkörpers, der so ausgebildet ist, daß Elektroden durch Verformen des Trägerkörpers durch seine Verformung die äußeren elektrischen in eine Stellung gebracht wird, die einen be- Anschlüsse der herzustellenden Bauelemente in bestimmten Winkel, vorzugsweise 90°, mit der 40 liebigen Ebenen angeordnet sind.
Ebene der Ausgangsstellung einschließt. Man geht bei diesem Verfahren so vor, daß nachcharacterized in that according to the drive to indicate that it allows a large number of contacts to be made between the semiconductor components and 35 semiconductor components, in particular microde external electrical connections of one of the planar transistors, using the other two in one plane of a carrier body which is designed in this way is that, by deforming the carrier body, the external electrical electrodes are brought into a position by deforming them.
Includes level of the starting position. One proceeds with this procedure in such a way that after 2. Verfahren nach Anspruch 1, dadurch ge- der Kontaktierung der Halbleiterbauelemente mit kennzeichnet, daß Trägerkörper verwendet wer- den äußeren elektrischen Anschlüssen eine der mit den, die so ausgebildet sind, daß eine oder meh- den beiden anderen in einer Ebene liegenden Elekrere Elektroden durch Verformen des Trägerkör- 45 troden durch Verformung des Trägerkörpers in eine pers nach der Kontaktierung der Halbleiterbau- Stellung gebracht wird, die einen bestimmten Winkel, elemente in eine Stellung gebracht werden, die in vorzugsweis 90°, mit der Ebene der Ausgangssteleinem bestimmten Winkel, vorzugsweise 90°, zur lung einschließt.2. The method according to claim 1, characterized in that the semiconductor components are contacted indicates that the carrier body is used, one of the external electrical connections with those which are designed in such a way that one or more two other electrics lying in one plane Electrodes by deforming the support body 45 by deforming the support body into a pers is brought after the contacting of the semiconductor construction position, which a certain angle, elements are brought into a position that is preferably 90 °, with the level of the initial Steleinem includes a certain angle, preferably 90 °, to the development. Ebene der Ausgangsstellung stehen. Bei einer auf dem Erfindungsgedanken beruhen-Stand at the level of the starting position. In a case based on the concept of the invention 3. Verfahren nach Anspruch 1 und 2, dadurch 50 den Ausführungsform des Verfahrens ist es möglich, gekennzeichnet, daß das Umhüllen der Halb- unter Verwendung eines mit beliebigen Einschnitten leiterbauelemente in einem Formkörper vorge- versehenen Trägerkörpers eine oder mehrere Eleknommen wird, bei dem gleichzeitig mehrere troden in einen bestimmten Winkel zur Ebene der Halbleiterbauelemente mit einer Vergußmasse Ausgangsstellung anzuordnen.3. The method according to claim 1 and 2, thereby 50 the embodiment of the method, it is possible characterized in that the wrapping of the half using one with any incisions Conductor components in a carrier body provided in advance with one or more elements in which several trodes at a certain angle to the plane of the Arrange semiconductor components with a casting compound starting position. versehen werden. 55 Durch das Verfahren gemäß der Lehre der Erfin-be provided. 55 By the method according to the teaching of the 4. Verfahren nach einem der Ansprüche 1 dung gelingt es, Halbleiterbauelemente herzustellen, bis 3, dadurch gekennzeichnet, daß das Umhüllen deren Elektroden zueinander jede gewünschte Konfider Halbleiterbauelemente in einem Formkörper guration aufweisen. Dadurch werden die Anwenvorgenommen wird, der gleichzeitig als Gießform dungsmöglichkeiten beim Einbau dieser Bauelemente und als Gehäusebestandteil nach entsprechender 60 erheblich erweitert.4. The method according to claim 1, succeeds in producing semiconductor components, to 3, characterized in that the covering of their electrodes to each other any desired confider Have semiconductor components in a molded body guration. This makes the applications is, which at the same time as a casting mold training options when installing these components and significantly expanded as a housing component according to corresponding 60. Zerteilung der Halbleiterbauelemente dient. Die gemäß der Erfindung hergestellten Halbleiter-Division of the semiconductor components is used. The semiconductor manufactured according to the invention 5. Verfahren nach Anspruch 1 bis 4, dadurch bauelemente werden zum Schutz gegen äußere atmogekennzeichnet, daß als Vergußmassen gießbare sphärische Einflüsse, insbesondere gegen Feuchtig-Kunststoffe, niedrig schmelzende Gläser und ke- keit, und zur Erhöhung der mechanischen Stabilität ramische Massen Verwendung finden. 65 mit einer niedrigschmelzenden, bei der Betriebstem-5. The method according to claim 1 to 4, characterized in that components are marked for protection against external atmospheres, that spherical influences that can be cast as casting compounds, especially against moist plastics, low-melting glasses and keit, and to increase the mechanical stability Ramic masses are used. 65 with a low-melting point, 6. Verfahren nach Anspruch 1 bis 5, dadurch peratur des herzustellenden Bauelements festen Vergekennzcichnet, daß ein Formkörper verwendet gußmasse umhüllt, wobei ein Formkörper zur Anwird, der aus einem gleichartigen Material, insbe- wendung gelangt, der es gestattet, daß gleichzeitig6. The method according to claim 1 to 5, characterized in the temperature of the component to be produced fixed Vergekennzcichnet, that a molded body used encased casting compound, a molded body being used which is made of a material of the same type and which allows that at the same time
DE1514422A 1965-03-11 1965-03-26 Process for the series production of semiconductor components Granted DE1514422B2 (en)

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DE1514422A DE1514422B2 (en) 1965-03-11 1965-03-26 Process for the series production of semiconductor components

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DES0095882 1965-03-11
DE1514422A DE1514422B2 (en) 1965-03-11 1965-03-26 Process for the series production of semiconductor components

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DE1514422A1 DE1514422A1 (en) 1969-08-14
DE1514422B2 true DE1514422B2 (en) 1973-09-20

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C3 Grant after two publication steps (3rd publication)
E77 Valid patent as to the heymanns-index 1977