DE1499847B2 - FIXED STORAGE - Google Patents

Description

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The present invention relates to a magnetic read-only memory with at least one read-only memory to see the memory state of the relevant core. Such a memory is cumbersome both in the memory level, which produces a number of memory locations, and in operation, since those which each store a bit contain the value of the toroidal core matrix by threading the toroidal cores on the presence or absence of a 5 the control and read wires the magnetic coupling of an interrogation conductor arrangement must be established and the short-circuit plugs are difficult to place, voltage and a read conductor on the relevant one.
depends. From the German patent specification 1 133 927 is a

The German Auslegeschrift 1 174 836 also discloses a semi-fixed value memory which already has a number of such magnetic read-only memories which are essentially parallel to one another. In this known memory, the value tern and a number of essentially each binary digit depends on the presence or absence of parallel and the control conductor crossing reading of an inductive coupling between an operating conductor contains. For the control conductors and / or reading input current conductors fed with interrogation pulses, a plate is provided as a base, which consists of a loop and an output current loop. For each highly permeable binary digit to be stored at least on the crosses, a self-contained junction point is provided between the control and read conductors ring line, which is in the input current loop and is inserted with a metal plate made of electrically good loop and surrounds a magnetic core, covered with conductive material is. The metal plate is the one reading wrap, which represents the output loop, in turn covered with a plate that carries from high voltage. In order to represent the value of the binary digit stored in the permeable material at least at the magnetic core relating to the crossing points, there is between the control and read conductors. The one or the other of the two coding is selectively carried out in that current paths formed by the ring line break through slots at predetermined intersection points in the metal plate. Such a read-only memory is seen through the as. Due to the presence of coupling loops, such a memory does not provide interfering - only weak coupling through the slots and therefore only weak output signals in a space-consuming arrangement.
feasible. In the German Auslegeschrift 1 176 197 is a

It is also described above from the German patent specification Halbfestwertspeicher, which is known as the actual 1 062 742 a magnetic coding device suitable storage medium punched cards or the like from elckknotted, the at least one group of trically conductive, magnetically shielding material in a row arranged ferromagnetic toroidal cores and contains the at least one between the control and reading conductor contains a coding wire which are arranged according to fen and to the corresponding a specific code combination through the ring memory locations counter-cores the corresponding loops is passed through. These are transferred to a row depending on the value of the bit to be stored Hearing cores are on a plate or strip have a coupling hole or are closed. The shaped ones Mounted carrier in which one of the hole in the water memory has the disadvantage that the adjustment Ring corresponding opening and one next to that of the coupling holes with respect to the coupling loops Ring lying opening are provided, so that the difficult and that the output signals because of the When threading the wire, as little as possible of a weak coupling and only a small amplitude Straight line deviates. Such orders are due.

the threading awkward to manufacture. The same "A disadvantage from the German Auslegeschrift 1 197 929 also have the usual toroidal core memories matrices on how they z. B. from the German patent control ladders and a group of reading ladders that 1 087 381 are known. 45 are isolated from the control conductors, perpendicular to

From the German patent specification 1 093 116 this has also run and with this to the Kreuzungsner a semi-fixed value memory with toroidal cores can be optionally coupled. As a coupling element knows, whose storage state by pre-magnetization are used electrically conductive or closed surfaces tion by means of mechanically displaceable permanent conductor loops, which are parallel to the plane of the two magnets is adjustable. Such an arrangement is 50 ladder groups in the immediate vicinity of very space-consuming. these and are arranged isolated from them and

The German Auslegeschrift 1 101 024 essentially continues to cover the intersection in question as a semi-fixed value memory. This memory, too, is relatively complex and contains a plate made of insulating material, which is decorated with and delivers only weak signals.
Sides two intersecting sets of elongated 55 From the German Auslegeschrift 1 216 937 is conductor loops are arranged. The plate also has a semi-permanent memory with a plate from the crossing points of the conductor loops each known a magnetic material, the hole on one side in which a pin made of ferromagnetic has a rectangular grid of grooves, which material can be inserted through which the conductor then contain two sets of crossing wires. About to be inductively coupled at the relevant point. The crossover points of the wires are bridging links. This storage unit also has the disadvantage that it is made of a very magnetic material, which is costly in terms of space, since interference with the magnetic material of the disk occurs when the structure is compact. On the grooved side of the plate is

In the German patent specification I 132 965 there is a second disk made of non-magnetic, non-conductive semi-read-only memory arranged in the form of a toroidal core matrix 65 of the material, which is a plurality of known, in which each toroidal core has an additional holes, each of which is above one Wire loop is assigned, which is arranged by a short crossing point of the wires. In the connecting plugs are closed or interrupted Holes are rotatable plugs made of non-mechanical

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The magnetic layer 10 is systematically inserted in the pointing end has a slot which is provided with pairs of holes arranged in rows and gaps, has a magnetic bridge member which is formed by the holes, and A ' such a turning of the plug in question in one or a pair, the holes B and B ' another such pair in a different diagonal direction with respect to the relevant 5 and the holes C and C a third such pair. The crossing point of the wires is adjustable. In the illustrative example according to FIG. 1, the storage is here due to the provision of magnetic layer 10 a total of 18 pairs of holes, a bridge members and their difficult placement by the corresponding number of storage cells for the course, and such storage can be formed by storing 18 binary bits . The holes are expediently poorly miniaturized and shown in several planes in a ferrite layer produced after the painting process before sintering

Finally, the layer is stamped from the magazine "Electronics".

Engineering Issue, October 10, 1958, pp. 100 to 103, The perforated magnetic layer 10 is provided with a

a ferrite plate memory is known, which has a pair of holes printed reading conductor 12 with a connection end

for each storage space. i ₅ 14 and another connection end at 16

The object of the present invention is to see. The printed reading ladder 12 is part of the ground, shared the disadvantages described above which are known to occur on the surface of the magnetic layer 10 Avoid read-only memory. wisely on the walls of all the holes in the layer

This object is achieved according to the invention. 10 and partially on the back of the layer 10. A read-only memory of the type mentioned at the beginning 30 The one formed by the printed reading conductor 12, which is characterized in that each conduction path runs from the connection terminal 14 storage level, a layer of magnetic material with through the hole C, Via the part 18 printed on the back of the magnetic layer 10, which contains a pair of holes for each bit storage location, back that corresponding pairs of holes of all storage levels are coupled through hole C, along the top of the layer, each with a common interrogation wire 25 10 at 20, down through the hole B 'are along the pelt, going through the first hole back and forth through the back at 22, up through hole B , etc. back the second hole in the opposite sense all pairs of holes in sequential all pairs of holes in the magnetic layer are coupled to a reading conductor in a manner known per se. 10, by being through one hole of a paapelt, which runs through the first hole of a ₃₀ res down and through the other hole of the be-hole pair in a first sense of direction, through the matching pair upwards. The second hole in each case, however, in an opposite direction, is guided according to any known offset, second sense of direction, and so that driving is plated onto the magnetic layer or a conductor piece is provided for each pair of holes, so that an opening opens in the area of the hole walls remains the entry point and the exit point of the voltage _35, by connecting a wire or query -lei read conductor to the pair of holes conductive, can be drawn ter.

The value of the stored in the relevant memory location is on the top of the magnetic layer 10

cherten bits depends on whether this piece of conductor is between the holes of a pair, the one

is interrupted or not. "0" is to be saved, additional printed short-circuit

With such a read-only memory, _{4 <J} conductor sections are not provided. Such a ladder piece at

24 together with the reading winding 12, 18 only forms the disadvantages of the state of FIG. 24 outlined above

Technology avoided, it is also suitable for a conductive short-circuit path or a short-circuit

also for a miniaturized structure. winding around the magnetic material between the

Advantageous developments and refinements for both holes C and C. In a corresponding manner

45 of the read-only memory according to the invention, a conductor section 26 forms a short-circuit turn

characterized the subclaims. the magnetic material between the holes B

The following are exemplary embodiments of a and B '. Between holes A and A ' where one

Read-only memory according to the invention on the basis of the "1" is to be stored, the additional conductor ·

Drawing explained, it shows pieces omitted. Following the same scheme is

1 shows a plan view of a read-only memory 50 in all memory cells of the magnetic layer 10

according to an embodiment of the invention, the method. Those storage cells that have an additional

18 binary digits are able to store, and have Liches connecting short-circuit piece are

F i g. 2 a simplified representation of a second, each marked with a "0", in order to

Specify embodiment of the invention with three information bits stored in the, while the

Cross-section shown storage levels. 55 those memory cells that do not have an additional conductor

The read-only memory shown in FIG. 1 have pieces, denoted by a “1”, in order to hold a layer 10 of a preferably high-level information bit, permeable, low-loss magnetic material with. Of course, the symbols “0” and “1” «Arbitrarily linear © - ^ - characteristic ( ^S 13 = magnetic induction assigned to the two structural arrangements, tion; ξ> = magnetic field strength). The magnet 60 and they can just as well be interchanged or they can be made of ferrite by decoating 10 and replaced by promising other symbols, pressed ferrite particles in layer form and sintered near the lower edge of the magnet. You can layer 10 located hole pair D, D ' is provided with a magnetic layer 10 but also by scattering connecting short-circuit piece between the two surfaces of a ferrite suspension on a smooth surface, 65 holes, the hole D at 30 to allow drying and subsequent sintering for A lower edge 32 of the magnetic layer at 34, along the desired magnetic properties of the rear side of the magnetic layer at 36, back around th. the edge 32 at 38 and along the top of the

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Layer at 40 runs to hole D ' . Since the line The printed read conductors 12, 51 and 53 on the line path 30, 34, 36, 38 and 40 a short circuit win- corresponding magnetic layers 10, 50 and 52 are dung around the magnetic material between the corresponding sense amplifiers SA _and SA ₂ and SA Forming ₃ holes D and D ' , the one in question is connected. Information stored in the memory cell is a "0". 5 In operation of the memory according to FIGS. 1 and 2, the conductor piece is therefore selectively excited around the edge 32 of one of the interrogation drivers, so that it guides the magnetic layer 10 to send the stored information through the interrogation wire, the formation of " 0 «to» 1 «. The correspondingly arranged memory cells in the conductor piece can easily be coupled at 34 and / or at different magnetic layers. While 38 where the printed circuit around the edge of io in Fig. 2 only three query driver / ,, I ₂ and / "historian 10 running around, shows by means of a grinding tools, of course, has a memory package with Mages or a sharp scratch or Schabinstrü- gnetschichten each with 18 storage cells are interrupted by the Mentes. The circumferential edge 32 shown in Fig. 1 type 18 corresponding interrogation is exposed and is of the required connections. For example, if the query driver I _{1 is} disconnected from the memory. 15 selects, so that it sends a current pulse through the Ab-Die by the holes E and E ' formed memory interrogation wire 61, then in all gezelle contains a printed conductor piece, the information at 42 printed reading conductors 12, 51 and 53 and 44 has been interrupted to induce the stored pointing read signals. .
Change information from "0" to "1". On the other hand, the one on the outside of the wire 61 through the hole .4 stores the interrogation current pulse formed by the holes F and F ' induces a read signal of the memory cell a "0", since the printed conductor voltage is transmitted by the transmitter effect in the one on the pieces at 46 and 48 have remained intact. Walls of the hole located part of the reading ladder. The design and arrangement of the printed circuit also induces short-circuit conductor pieces along the memory cells through the wire 61 in the hole A '. upward current pulse a read signal of the lower edge of the magnetic layer 10 is so as voltage in the on the walls of the hole Λ 'met that the stored information of this located part of the read conductor 12. The two in-edge cells can be changed after the Duced read signal voltages are assembled in their Polari magnetic layer 10 and additive to one fact so that they cause a current to flow, memory package is wired. The memory cells at the lower edge of the magnetic layer 10, which is perceived by the read amplifier SA , can be reserve 30 The resulting read signal voltage will be from the read cells, which will only be used when the amplifier SA ₁ indicates the storage of information stored in other memory cells » 1 «is to be changed in the selected memory cell of the magnetic layer. In this case the IO can be interpreted.

Desired new information is induced in some or all of the three edge cells by wire 61, and these 35 corresponding memory cells in magnetic layer 50 can then take the place of the cells storing the old query pulse in the read conductor 51 formation there step. The outer edge of the magnetic layer 10 according to FIG. 1 forward 54 no tension. The absence of an induced arrangement can also be provided, if desired, on th voltage represents a read signal which is provided by the read amplifier SA ₂ from the other three outer edges of the magnetic layer 4 ° as an indication of the storage of a 10. “0” in the relevant cell of the magnetic layer 50 F i g. Figure 2 shows a section taken along lines 2-2. The from the query driver /, in the in F i g. 1 and, in section, two other similar memory cells controlled by magnetic layer 52 are perforated magnetic layers 50 and 52, which together are arranged in a package similar to the controlled cell in the magnet with layer 10. 45 layer 10 by storing a "1" so that the magnetic layer 50 has an induced voltage at 54 additional sense amplifiers SA _3. Short-circuit conductor pieces so that the corresponding In the same way, any of the memory cells can each store a "0". The storage cells of these in the various magnetic-magnetic layers 52 in the embodiment shown have no such short-circuit conductor pieces due to a corresponding interrogation driver, so that they are de-activated.

speaking memory cells each store a "1" in a practically executed and tested brazen. The query driver supplied the memory package with query-corresponding memory cells in the magnetic pulses with an amplitude of 15 milliamps and layers 10, 50 and 52 are each made by a pulse width of 20 nanoseconds. A read question conductor 61 is coupled, which can expediently have the 55 signal of 50 to 100 millivolts in each lei form of an insulated wire. The abter induces, which couples a triggered memory cell, the question wire 61 runs through each hole a "1". A single-stage of the corresponding pairs of holes in all layer transistor equipped sense differential amplifiers 10, 50 and 52 and then back through the other produced a "1" reading output signal hole of the same pairs of holes in all layers 60 of 2 volts. The read output voltage of a one-th spoke in its amplitude roughly that of the impulse it sends in the system. The arbitrary interference voltages that occur form in a corresponding manner.
Query drälitc 62 and 63 Loop path for query 65 It was found that a query driver, the impulses from the corresponding query drivers /., A query pulse of 5 milliamperes', and / _{: 1} through the corresponding pairs of holes in the Lcsc signals for "0" and can produce "1", which graze 10, 50 and 52 according to MhidUcii. Reinforcement in a single-stage diflerential reinforcement

ker have sufficient amplitudes to be fed directly into the usual switching mechanisms of the numeric calculator to become. The storage package was operated with a repetition rate of 20 megahertz. That that is, the information stored in the memory cells along an interrogation wire could be within of the period of 50 nanoseconds can be read, with occurring within the same period of time Disturbances could subside as far as it was for the initiation of the next query process necessary is.

The sets of conductors designated as read conductors and sets of conductors designated as interrogation conductors can be interchanged in terms of their function, ie interrogation drivers I ₁ , I ₂ and / ₃ can functionally with read amplifiers SA _1; SA ₂ and S ^ i _{3 are} swapped. The connection of the interrogation drivers to wires running through the various magnetic layers of the package and the connection of a sense amplifier to the printed conductor of each magnetic layer is preferable from an operational point of view in a numeric calculator, since usually one particular word of information is one of a large number of such information words should be selected with a relatively small number of information bits. For example, it may be desirable to select any one of approximately four thousand words of 64 bits each. In such an arrangement, 64 magnetic layers, each with a single sense amplifier, and four thousand interrogation wires, each routed through all 64 magnetic layers, would have to be provided.

Claims (4)

Patent claims: 1. Magnetic read-only memory with at least one memory level which contains a number of memory locations which each store a bit, the value of which depends on the presence or absence of a line connection influencing the magnetic coupling of an interrogation conductor arrangement and a read conductor at the relevant memory location, characterized in that each The memory level contains a layer (10, 50, 52) made of magnetic material with a pair of holes (A, A '; B, B'; ...) for each bit memory location, so that corresponding pairs of holes of all memory levels each have a common interrogation wire (61, 62 , 63), which runs through the first hole (A, B, ... ) Back and forth through the second hole (A ', B', ...) in the opposite sense, that in each storage level all pairs of holes in are coupled in a manner known per se with a reading conductor (12, 51, 53) which passes through the first hole (A, B ... ) of a pair of holes in a first sense of direction, through the respectively second hole (A ', B' ,. ..) but is guided in an opposite, second sense of direction, and that a conductor piece (24, 26) is provided for each pair of holes, which conductively connects the entry point and the exit point of the reading conductor on the pair of holes, the value of the in the relevant memory location stored bits depends on whether this section of conductor is interrupted or not. 2. Magnetic read-only memory according to claim 1, characterized in that the Magnetic material of the layer (10, 50, 52) has a substantially linear -. ^ - characteristic. 3. Magnetic read-only memory according to claim 1 or 2, characterized in that the Read conductor (12, 51, 53) and the conductor pieces (24, 26) designed as a printed conductor and on the Magnetic layer are arranged. 4. Magnetic read-only memory according to claim 1, 2 or 3, characterized in that the conductor piece (34, 36, 38) runs over an outer edge (32) of the magnetic layer (10). 1 sheet of drawings 109 551/396