DE1499672A1 - Arrangement with a thin magnetic layer element - Google Patents

Description

U99672

Applicant:

Hughes Aircraft Company Centinela and Seale Street Culver City, Ca., USA

Stuttgart, September 26, 1966 P 1481 S / kg

Arrangement with a thin magnetic sole element

The invention relates to an arrangement with a thin magnetic layer element, in particular to one such arrangement used for digital storage can.

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In the technology of the computing systems, in which on the Reduction in size, weight and performance requirements are increasingly being considered Storage arrangements made of thin magnetic sleeves used for digital computing systems. Usually these include Arrangements a thin element made of a ferromagnetic steel Material that has uniaxial anisotropic properties defined by an anisotropy axis (axis more preferred or easy magnetizability) are marked. When the thin layer is exposed to an external magnetic field and the field is then removed is any remanent magnetization directed parallel to the axis of anisotropy. The remanent magnetization can be represented by a vector and can be directed in one of two possible directions parallel to the axis of anisotropy.

In order to use thin magnetic layers as a storage element, a vectorial direction of the remanent magnetization can be used arbitrarily to represent a digital memory state can be selected, for example to represent the digit BINS while the other vectorial direction is the Digit represents HULL. In other words, a digital ZERO can be made by the vector direction of the remanent magnetization

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Ton right to left parallel to the axis of anisotropy and a digital ZERO can be represented by the vector direction of magnetization y from left to right. Since the vectorial direction of the remanent magnetization can be controlled by externally suggested magnetic fields, it is possible to switch every magnetic element so that it either stores a ONE or a ZERO.Afterwards, the stored state can be determined by the thin layer exposed to another magnetic field and its effect on the remanent magnetization is observed.

The object of the invention is to provide the devices which make use of thin magnetic solids as discussed above lu reressern that take advantage of a «low demand Have switching and query performance. In particular, durob the invention created a device bit magnetic thin solder, iwisoben their individual Storage elements have a high level of magnetic isolation, which means that a high storage capacity per unit volume can be achieved. Nooh should also be the magnetic Shift element itself to be improved «

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The task is with an arrangement with a thin magnetic layer element and means for generating magnetic fields associated with the magnetic element are magnetically coupled that the means for generating magnetic fields have a plurality of ron etromleitenden sections which are spaced from one another side by side and of which the inner portions pass through an area which is defined by the surface of the magnetic element, while the outer portions of the field-generating means an outside of the Boundaries of the magnetic element duroh-1aufen, and that the etrom-guiding sections in series in such a way are conductively connected to one another that they are the same electric current in series duroh the inner sections in a first Stromriohtung and each between the Passage through two inner sections through one of the outer sections in the opposite direction of flow Hindu raw, so that the inner sections have an additive generate a magnetic field, so that the magnetic element is acted upon, while the outer center compensates generate magnetic fields that generate the magnetic

■ ■ ■ · »

Reduce the field strength in the peripheral areas of the additive magnetic field. .

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2s can have an equal number of current-conducting in the weeentlioeen Portions of each surface of the magnetic element adjacent to each other and substantially work in the same way, except that the Current carried in series from one of the plurality of sections to the other through the corresponding ones Sections of the two sets are directed in opposite directions

The advantage of the arrangement according to the invention is that that the additive magnetic field generated by a relatively small current in the inner sections, has a sufficient size to affect the magnetization of the thin magnetic Schlöhtelementes, and that the magnetic field generated by the current In the external waste * section is generated, a TtIl of the magnetic field strength in the edge area of the additive magnetic field extinguishes and reduces and thereby the desired magnetic field Isolation causes.

An embodiment of the invention forms a magnetic memory, in the thin magnetic layer element *, the uniaxial have anisotropic properties, which are summarized in a matrix. The conductors are arranged so that each conductor

ORIGINAL INSPECTED

above and below a variety of thin magnetic Layer elements leads along, so that he has a word or Numbers line forms. When an electric current breaks the conductor is supplied, only those of the thin magnetic layer elements associated with the conductor are passed through the magnetic field affects while the magnetic elements that are in adjacent rows or columns and in adjacent Layers are arranged by the edge area dee magnetic Field generated by the conductor are not noticeably influenced ".

Further features of the invention result from the following Description of an embodiment of the invention in conjunction with the claims and the drawings. The single features can each be for one or several in one embodiment of the invention be realized.

Ea show:

Fig. 1 shows a diagram of a thin magnetic representation Schihfctelejaentea, the uniaxial anisotropic property having,

Figures 2a and 2b are graphical representations of typical magnetic Fields that are used for influencing © ines ScareIb- or serve for leaping processes,

Flg. 3 is a plan view of one of thin magnetic Layers making use of an arrangement according to the invention,

Figo 4 is a cross-section along the line 4-4 through the Arrangement according to Fig. 3 and

Flg. 5 a diagram for the Yeraneo visualization of the magnetic Field in the arrangement according to FIGS. 3 and 4 in the ratio su the magnetic field that passes through a hitherto customary single conductor is generated.

Flg. 1 is an aehsmatleeh illustration of one of a thin magnetic layer existing element 12, dae Has uniaxial anisotropic properties, which are characterized by an anisotropy axis A-A «Bs let for the uniaxial anisotropy characteristic of any remanent Magnetization N has tendencies or striving to align itself parallel to the axis of anisotropy A-A and vectorial length in one of the two possible directions to assign this axis «The two possible vectorial Directions of the remanent magnetization M can be chosen arbitrarily in order to have two visual digital storage conditions

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* For example, the remanent magnetization H. if they vectorially from left to right on an O ° -Hefer <»ni point is directed, a storage state for a digital Represent ZERO. On the other hand, the remanent magnetization H, if it is vectorially directed from right near left to a 180 ° reference point, a storage situation represent for a digital ONE.

To write such digital information, a pair of intersecting magnetic fields, as shown in FIG. 2a, is applied from the outside to the thin magnetic object element 12 in order to make the real magnetization M from the axis of the anisotropy AA over an angle turn it out and turn it back into a preferred orientation parallel to the axis of the anisotropy AA, which points vectorially in a selected direction along this axis. For example, a magnetic field H ₁ or H _{2 can be applied} across the axis of anisotropy AA sum turning, including the remanent magnetization M in the direction of a 90 ° reference

point or in the direction of a 270 ° reference point see below. In addition, a wide sagnetisohes field B «o4er H * parallel to the Aohee of the anisotropy A-A, so that

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the resulting magnetic field resulting from the combination with the magnetic transverse field H ₁ rotates the remanent magnetization M vectorially into an angle £ M, which is either between 0 ° and 90 ° or between 90 ° and 180 °. In other words, after the magnetic field H ₁ is removed, the remanent magnetization M rotates back in the direction parallel to the Aohee of the anisotropy AA and is vectorially directed from left to right (0 °) if the combined fields H ₁ and H * were applied . Instead, the remanent magnetization M rektorieli ron is directed right to the left (180 °) if the two fields H ₁ and H were applied together. Thus, depending on the selection of the magnetic fields, a digital MULL or a digital EZHS can be written into the thin magnetic layer element and stored in it »

In order to query or read the memory state of the thin magnetic layer element 12 ′, a magnetic field H ₅ or Hg (FIG. 2b) is applied transversely to the Aohee of the anisotropy AA and the remanent magnetization M is thereby rotated. Such a rotation of the magnetization rectifier M induces a change in a “(not soaped) conductor that is magnetically coupled to the element.

ORlGfNAU INSPECTEO

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Slerung M yon oriented left to right. Therefore, when the thin magnetic film element 12 is exposed to an magnetic field He, the vectorial rotation of the magnetization vector H will induce a signal of a first polarity in the read conductor. On the other hand, in the case of a stored EIIiTS, the real magnetization M is directed vectorially from right to left. If a transverse magnetic field He is now applied to the thin magnetic layer element 12, the vectorial rotation of the remanent magnetization H will therefore induce a signal of opposite polarity in the read conductor. After removing the transverse field H ₅ during reading, the magnetization can return to its original state if a non-destructive reading is carried out.

It goes without saying, of course, that other methods can be used to detect and query the remanent magnetization in the thin magnetic layer element 12 and that the above description of the Eotatlonssohalt is used to explain the switching operations in the uniaxial anisotropic properties of the Schevatlscbeschauierte magnetic material . >

Details of the arrangement according to the invention are in the 5 and 4 show the different views of the same

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Show object. No anisotropy axis AA has been established in these figures because, although the means of generating the magnetic field are preferably used to generate a transverse magnetic field for a plurality of bits, such as an example of a phrase, if desired in another embodiment can also be used to generate magnetic fields running parallel to the axis of anisotropy. to be magnetically coupled with these conductors,

In operation, the conductor 14 when it generates an electrical Current leads, a magnetic field that is applied to the thin magnetic Schiohtelement, around its remanent Affect magnetization cu. In unity, the leader 14 consists of a number of management deputies 16, 16, 20, 22 and 24, which run parallel to each other or side mn side back and forth in a plane that benmohbart the plane in which the surface of the thin magnetic substrate 12 is located. Bs understands eich naturlioh, dml

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it is not a critical requirement for the individual Leitungeabeohnitte, in the same plane su lie rushes you one a line sections are at their Baden do a Serieneohaltung interconnected eo tHe same Stro "hindurehfließt in series through each Leitungsabsehnitt in a selected order.

The individual sections of the conductor H are attached in such a way that that an electric current supplied to an input end of the conductor near the surface of each thin layer element 12 duroh an area or a space, that is constrained by the hands or the surface of the thin magnetic substrate 12 several times in one direction (left to reohte) with the help of the inner sections 16, 20 and 24 and an additive Magnetic field generated that is applied to the thin magnetic Film elements 12 is applied. Furthermore, the current in series between two such inner passages is duroh the outer conductors 18 and 22 led through "in area surüok (from right to left), which is outside the · area ·· »ta» through the edges de · dtiaiyn Magnetic Schiohtileeentee is limited, and it creates a magnetic field, there Part of the additive magnetic field · in a band area partially extinguished and reduced. Ee also lies in i · frame

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der Inventionι the edge area at any desired point of the thin layer, such as a length of one edge to add bit storage areas in the thin layer 12 define. The magnetic element of interest is then a certain area which is delimited within the total area of the thin layer 12.

The conductor 14 is arranged above the lower conductor 26 which generates a magnetic field and which is congruent with the conductor 14 and is located in a deeper plane, parallel to the plane of the surface of the thin magnetic Layer element it 12 runs. Of course one can other arrangements may be possible in each individual conductor lower ladder 26 'to use »the two conductors 14 and are both with the help of a connecting member 25 to each other connected in series. As a result, the other or lower conductor 26 in series carries the same current in the same way and way, apart from the fact that the Strtimriehtujsf in the individual conductor sections 28, 30, 32, 54 and 36 opposite see below the current direction in the entepreohenävtt: Atoeofeattten of the conductor 14 is, as it is by the holy ait the dickled Shafts is illustrated. All results will be the additive magnetic fields of conductor 14 and the conductor also added when attached to the thin bagaetite element 12 can be created.

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In operation, a current from a binganga clip 40 of the "conductor 14" is applied and first passed through the inner section from left to right through an area defined by the surface of the thin magnetic layer. The current is then passed over to the abundant section 18 and directed backwards along a path through an area which is outside the boundaries of the magnetic bite tea 12. For the next passage, the current is conducted inwards and through the inner conductor section 20 sa the thin magnetic visual element in the same biohtusg (from link * naoh reohte) as in the inner section 16. At the end of the conductor section 20 the current goes on outer ladder office 22 UiMr ₉ in which he is again led surtiok (from reohte naoh link ·). Thereafter, the current goes back inwards to the inner conductor section 24 and again crosses the area defined by the flat, thin magnetic solenoid element 12 in the same orientation as it was previously through the inner sections 16 va & 20. ϊβηη the current errsleat the end of the inner section 24 »it is slid down the lower conductor 26 with the help of the Yer% in & 3 & g * limbs · 25, which is shown in dash-dotted lines ·

as previously stated, is nasty under · £ eif »r 26 su des Head 14 coagruent and deesalo in Ä «r Bteufsiaiit naoh fi«, 3 not visible. Se understands the current in the

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Ladder 26 takes the same path as in ladder 14 »as it is illustrated by the dashed arrows. This circuit is better reproducible, albeit on Reference is made to Fig. 4, in which the conductor sections 28, 30, 32, 34 and 36 illustrated in cross section are.

In operation, the current from the connecting member 2, 5 is first fed to the end of the straight parent section 28 and then in accordance with FIG. 3 from right to left or in proportion. guided out of the drawing plane. For the purposes of the description, in FIG. 4 the direction of the straw has been represented by a point (.) When the flow of current comes out of the plane of the drawing, and by an ac when the flow of the flow into the plane of the drawing. The point (.) In Flg. 4 corresponds to the current flow from right to left in Flg. 3 and the ζ a current flow from left to right. Accordingly, according to Flg. If the current is thus directed to an inner filed 28 and flows below the corresponding inner CULled 24 τοη right to left · Sr then changes over nt an outer section 30 and flows therein τοη left to right under the corresponding section 22. The current then changes again to an inner section 32 and flows in it iron right to the left under the corresponding inner section

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along. The current then goes back to an external one Abeohnitt 34 over, in which he went from left to right under the corresponding outer Abeohnitt 18 is passed along. When the stream passes the end of the outer sections «34 has reached, he returns to an inner habit 36 «urüok, in which it then flows from right to left under the corresponding inner section 16 to an output terminal 42.

The current thus carries out a total of six inner Durohgang · duroh an area that extends through the two surfaces of the thin magnetic Sohiobtelementes 12 defines let, and creates an additive magnetic field that is coupled to the element. Create the four outer electrical passages magnetic fields, which are directed opposite to the additive field, that through'die internal current passages is generated in the same plane, and have the striving, suspend part of the magnetic field in the band area. Of course this results in a different number of Stroke passages, if another set of performance decrees is provided.

A typical example of the magnetic field strength H that sucked in through the above doorway and with that thin magnetic one Layer element 12 is applied, is duroh the

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Extracted curve in the diagram naoh Flg. 5 illustrates On the vertical axis the diagram shows the magnetic Field strength B parallel to the plane of the thin layer eleraentee 12 running component applied. On the horizontal axis are the physical dimensions of the Circuit parts in a plane which corresponds to the sonitt plane naoh Fig, 4 is shown. Accordingly, they are Sections 16 to 24 of the conductor 14, the sections 30 to 30 of the conductor 26 and the thin magnetic layer element 12 drawn above and below the horizontal axis a magnetic field with an average field strength H = X is generated and the thin magnetic layer element 12 supplied. The outer ladder consoles have the « Inclination, the magnetic field strength H In deH land area iu diminish, thereby reducing the magnetic field strength in the building between the two outer conductor sections assigned to one another is reversed, then becomes slightly positive again and finally asymptotically approaches zero. In addition, that will magnetic field In the peripheral areas above the upper conductor and under the lower ladder ^ 26 through the opposite and compensating field significantly reduced ·.

If a single conductor comprising sections 46 and 48, illustrated by the dashed lines in FIG

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would be used, a current of 31 would be required, to create a magnetic field that graphison through the dashed line is shown. As a result, would the same magnetic field strength H = X in the thin nagηβΐquench Layer element are generated, while the strength of the magnetic field in the edge area can be significantly higher as in .the previously described device having the features of the invention.

Some advantages that are achieved by the embodiment according to FIG and Fig. 4 are obtained in that there is a magnetic Field ρ that has sufficient strength to show the uniaxial anisotropic properties of the thin magnetic seniohtelementee 12 is generated by a relatively low current. In addition, the same low current of the conductor also, used to determine the magnetic field strength H in the peripheral areas of the magnetic field essentially see below decrease, and »was significantly below the» magÄ # tt »o field strength comparable magnetic fields, dl · With others Funds are generated. As a result, it is «agilon, further · Rows or columns of thin magnetic Sohiobttleaente 12 arrange relatively close to other graters or crevices and stack several layers of storage elements auxus without

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that significant difficulties from magnetic creep due to repeated polling of neighboring Elements occur as a result of the low power requirement of the conductor described above, it is possible to make economic Semiconductor power sources, such as integrated so-holding parts, to use.

A device using thin layers was used manufactured and tested according to FIGS. 3 and 4 with the following dimensions and the following materials. That magnetic thin film element 12 consisted of 81

Nickel, and 19 wt _e £ iron and was in a film of 1000 A thickness-rgesehen v * It had a length of about 1.5 mm (60 mil) and a width (mil 30) of about 0.75 at. The thin magnetic layer was attached to a substrate 54 made of glass, such as Corning Micr-Sheet Ho. 0211, which is an alkali-link borosilicate glass described in Corning Glase Works Bulletin CCF 2 / 5M / 9-62 . The backing was approximately 0.15 m * (6 mils) thick. The conductors 14 and 26 were made of 0.025 mm (1 mil) thick copper and applied by printing or etching to carrier foils 56 and 58, which consisted of a cured, glass fiber reinforced epoxy resin. Each of one conductor sections 16-24 and 28-36 was approximately 0.15 mm (6 mils) wide and separated from the adjacent section by one

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Spaced approximately 0.13 mm (6 mils) wide. Around to electrically isolate the conductor H from the thin magnetic sheet member 12 and to isolate the one from each other to connect were 0.025 µm (1 mil) thick layers

60 and 62 made of non-hardened, glass fiber reinforced epoxy resin between the thin magnetic Schiohteleraent 12 and attached to the conductor 14 as well as between the conductor 26 and the carrier 54. In the final assembly, the united Solhiohten pressed together and exposed to heat, eo daO the sole 60 and 62 are cured and bind the entire assembly together.

In operation, a Stroa was between 170 λ and 200 bA old a rise time of 60 hanoa seconds to the input · - and Output terminals applied, whereupon a rotation of the reaanent Magnetization was detected

It goes without saying that the dimensions mentioned above, Materials and the Arbtitsparaaeter only exemplary for one are the only structure that has been manufactured and tested, and are not to be taken in a limiting sense of the features of the invention.

To the device working with thin layers as digital Storage unit can operate eu, extend 41 · conductors

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14 and 26 according to FIG. 3 Generally parallel to an anisotropy axis AA and generate a magnetic transverse _{field, since this corresponds to the magnetic field H 1} or Hg according to FIG. 2a. These conductors can be considered to be word field turns. As previously stated, this transverse magnetic field rotates the remanent magnetization M out of the axis of the anisotropy AA. The bit line, which is indicated by dash-dotted lines in FIG Anisotropy AA, which correspond to the magnetic fields H ~ and Hj according to FIg ₀ 2, in order to determine whether the storage element assumes the state for a ZERO or a ONE.

The same bit line can also be used as a lee line when the memory cells are polled. When the word conductors 14 and 26 generate a cross-loop magnetic field, rotate around the stored remanent magnetization M au, an electrical signal is induced in the wire The polarity of this induced electrical signal corresponds to the direction in which the remanent magnetization M showed when it was being shot. 8o it is possible to read whether the storage state of a digital ZERO or a digital ONE exists by the polarity of the induced Reading signalβ is determined «

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In the arrangement described above, the magnetic layer was thin enough to carry out a rotation signal under the influence of a transverse field and a bit field. In another embodiment of the invention, the storage and switching can also take place in shifts of various other thicknesses, which only require the use of a bit holding field of sufficient strength for switching _{to overcome the H 0} de · material. The principle of the invention i "continue t on magnetic films or media applicable, have the isotropic properties and in which the E also _Q of the magnetic material with koinzidsnten fields sum 8ohalten can be overcome _o Also, the principles of the invention are not limited to one an element · , thin? Layers for each bit or structurally separate magnetically "sparks" limited, because it may be possible "to apply the principles of the invention to other suitable forms of thin film layers, such as, for example, tapes or sheets of magnetic films where dl · · Torteil the magnetic "insulation would be particularly useful because hinder su to &% m magnetiechen areas aussuereiten custody. In other words, each magnetic element could in reality be one of a large number of specific elementary areas in a larger area, since it is formed, for example, on a tape, from a film made of a magnetic material.

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Although the essential features of the invention have been described and explained on the basis of an exemplary embodiment example, it is clear that the invention is not limited to the details shown and described, but rather that modifications are possible _; which are within the scope of the invention.

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Claims (4)

Claims 1) Arrangement with a thin magnetic vision device and means on the magnetic field, unfortunately, the old are magnetically coupled to the magnetic element, thereby being characterized in that the means for diffusion magnetic fields a multitude of ron stroaltittndtn Sections (16 to 24 and 28 bit 36) that Ib Spaced from each other side by side and of which the inner Absohnitte (16, 20, 24 and 28, 32, 36) traverse an area by which the surface of the magnetic element (12) defines, while dit outer subscription (18, 22 and 30 «34) dtr ftldtrstugtndtn Means an element outside of the Qrtnitn dtt aagnttiatbtn (12) pass through the lying area, and dtJ dlt ttromleitenden Sections are conductively connected to one another in series in such a way that they have the same electrical current in Series through the inner sections in a first stream direction and in each case «wipe the passage doroh twei inner sections by sliding one dtr outer section in the opposite direction, tO that the inner sections have an additive magnttltohtt PtId erseugen, with the dae magnetitoht Sohiohteleaent entrusted is, while the outer Absohnitte erseuge compensating magnetic fields, which the magnetitht field strength in the fringes of the additive magnetic field weaknesses. .A 909887/1272 - ²⁵ V 1A99672 2) arrangement naoh claim 1, characterized in that the means for generating magnetic fields have a first plurality of sections (16 to 24) which are adjacent to a surface of the magnetic element (12), and a second plurality of sections (2Θ to 36 ) _f comprises the the other surface of the magnetic member adjacent to bind, and in that the second plurality of Absohnitten the first plurality of sections connected in series. 3) arrangement naoh claim 1 or claim 2, characterized in that a plurality of the thin magnetic Layer elements (12) form a digital storage matrix. 4) arrangement naob one of the preceding claims, characterized marked that the thin magnetisoha Sohioht (12) has uniaxial anisotropic properties. 909887/1272 Blank page