DE1489696A1 - Semiconductor element, in particular with an improved switch-on behavior - Google Patents

Semiconductor element, in particular with an improved switch-on behavior

Info

Publication number
DE1489696A1
DE1489696A1 DE19651489696 DE1489696A DE1489696A1 DE 1489696 A1 DE1489696 A1 DE 1489696A1 DE 19651489696 DE19651489696 DE 19651489696 DE 1489696 A DE1489696 A DE 1489696A DE 1489696 A1 DE1489696 A1 DE 1489696A1
Authority
DE
Germany
Prior art keywords
control electrode
semiconductor element
emitter
area
distance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19651489696
Other languages
German (de)
Inventor
Lutz Dr Edgar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri France SA
Original Assignee
BBC Brown Boveri France SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri France SA filed Critical BBC Brown Boveri France SA
Publication of DE1489696A1 publication Critical patent/DE1489696A1/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Bipolar Transistors (AREA)

Description

Halbleiterelement, insbesondere mit einem verbesserten Einschaltverhalten Die Erfindung bezieht sich auf ein Halbleiterelement mit mindestens drei pn-Übergängen, zwei Hauptelektroden und einer Steuerelektrode. Es ist bekannt, daß bei Zündung derartiger Halbleiterelemente durch den Steuerstrom zuerst nur eine kleine Stelle der Sperrschicht in der Nähe der Steuerelektrode gezündet wird. Von dieser kleinen Stelle breitet sich die Zündung mit einer endlichen Geschwindigkeit über die gesamte Fläche dex Sperrrschicht aus.Semiconductor element, in particular with an improved switch-on behavior The invention relates to a semiconductor element with at least three pn junctions, two main electrodes and one control electrode. It is known that upon ignition Such semiconductor elements only have a small point at first due to the control current the barrier layer in the vicinity of the control electrode is ignited. From this little one The ignition spreads with a finite speed over the entire place Surface made of dex barrier layer.

Diese endliche Ausbreitungsgeschwindigkeit des Zündvorganges hat, insbesondere bei steil ansteigendem Durchlaßstrom - also einem großen di/dt - eine hocke Stromdichte in demjenigen Bereich zur Folge, in dem die Zündung einsetzt. Dort erwärmt sich das Halbleiterelement sehr stark und es tritt möglicherweise, d. h. bei zu großem di/dt,eine Zerstörung des Halbleiterelementes ein. Bei bekannten Halbleiterelementen liegt die Begrenzungsfläche des Emitters im Halbleiterkörper im wesentlichen parallel zum benachbarten pn-Übergang. @s ist in der Erfindung erkannt worden, daß ein Halbleiterelement eine größere Zündausbreitungsgeschwindigkeit als die bekannten Halbleiterelemente hat, und damit einen steileren Stromanstieg ohne Zerstörung des Elementes bewältigen kann, wenn die Hauptelektrode (Emitter), die sich auf der gleichen Fläche des Halbleiterplättchens befindet, wie die Steuerelektrode, in dem der Steuerelektrode am nächsten liegenden Bereich den größten und in dem von der Steuerelektrode entferntesten Bereich den kleinsten Abstand vom nächsten pn-Übergang hat.This finite speed of propagation of the ignition process has especially with a steeply increasing forward current - i.e. a large di / dt - one squat current density in the area in which the ignition begins. There the semiconductor element heats up very strongly and it may occur d. H. if the di / dt is too large, the semiconductor element will be destroyed. At acquaintances Semiconductor elements, the boundary surface of the emitter lies in the semiconductor body essentially parallel to the adjacent pn junction. @s is recognized in the invention been that a semiconductor element has a greater ignition propagation speed than the known semiconductor elements, and thus a steeper current rise without Destruction of the element can cope with if the main electrode (emitter) that is on the same surface of the semiconductor die as the control electrode, in the area closest to the control electrode the largest and in the the smallest area from the control electrode distance from the next pn junction.

Dabei ist es in Weiterbildung der Erfindung zweckmäßig, daß der Abstand des Emitters vom nächsten pn-Übergang, von dem der Steuerelektrode am nächsten liegenden Bereich zu dem von der Steuerelektrode entferntesten Bereich, kontinuierlich abnimmt. Gemäß einer weiteren Ausbildung der Erfindung ist es von Vorteil, wenn der Abstand der Steuerelektrode vom nächsten pn-Übergang kleiner ist, als der größte Abstand des Emitters von diesem. Erfindungsgemäß wird der Emitter einlegiert. Die beanspruchte unterschiedliche Eindringtiefe wird bevorzugt durch entsprechende Anordnung der Gewichte beim ?inlegieren eingestellt. Es ist auch möglich, die unterschiedliche rindringtiefe des Emitters durch Einstellung eines entsprechenden Temperaturgradienten über die Legierungsform bei gleichmäßiger Verteilung der Gewichte beim Einlegieren einzustellen. Die Erfindung ist bei allen legiert-diffundierten Halbleiterelementen zum Schalten anwendbar. Zur näheren Erläuterung der Erfindung wird auf die Zeichnung Bezug genommen, in der ein Ausführungsbeispiel des erfindungsgemäßen Halbleiterelementes schematisch im Querschnitt dargestellt ist. In ein in an sich bekannter Weise durch Diffusion hergestelltes pnp-Element werden die Hauptelektroden 1 (Emitter) und 4 und die Steuerelektrode 2 einlegiert. Dabei ist durch entsprechende Anordnung der Gewichte beim Einlegieren eine unterschiedliche Eindringtiefe des -:mitters 1 erzielt worden. Der der Steuerelektrode 2 benachbarte Bereich des mitters 1 hat vom nächsten pn-Übergang 3 eine größere Entfernung als der vor. der Steuerelektrode abgewandte Bereich des Emitters. Die Entfernung des Emitters vom nächsten pn-übergang ändert sich zwischen. den beiden genannten Bereichen kontinuierlich. Die Steuerelektrode 2 hat vom pn-i-*bergang 3 eine -Entfernung, die geringer ist, als die größte Entfernung des Emitters von üiesem.It is expedient in a further development of the invention that the distance of the emitter from the next pn junction, from the one closest to the control electrode Area to the area farthest from the control electrode, decreases continuously. According to a further embodiment of the invention, it is advantageous if the distance the control electrode from the next pn junction is smaller than the greatest distance the emitter of this. According to the invention, the emitter is alloyed. The claimed different penetration depth is preferred by appropriate arrangement of the Weights set when alloying. It is also possible to have the different penetration depth of the emitter by setting a corresponding temperature gradient on the alloy form with an even distribution of the weights during alloying to adjust. The invention applies to all alloy-diffused semiconductor elements applicable for switching. For a more detailed explanation of the invention, reference is made to the drawing Reference is made in the one embodiment of the semiconductor element according to the invention is shown schematically in cross section. In a manner known per se The main electrodes 1 (emitter) and 4 become the diffusion-made pnp element and the control electrode 2 is alloyed. The appropriate arrangement of the Weights when alloying a different penetration depth of the -: middle 1 achieved been. The area of the center 1 adjacent to the control electrode 2 has the next one pn junction 3 a greater distance than the one before. facing away from the control electrode Area of the emitter. The distance of the emitter from the next pn junction changes between. the two areas mentioned continuously. The control electrode 2 has a distance from the pn-i junction 3 which is less than the greatest distance of the emitter of this.

Claims (6)

Patentansprüche 1. HalrleiteTelement mit mindestens drei pn-Übergängen, zwei Hauptelektroden und einer Steuerelektrode, dadurch gekennzeichnet, daß die aauptelektrode (1) (Emitter), die sich auf der gleichen Fliehe des Halbleiterplättchens befindet wie die Steuerelektrode (2), in dem der Steuerelektrode am nächsten liegenden Bereich den größten und in dem von der Steuerelektrode entferntesten Bereich den kleinsten Abstand vom nächsten pn-Übergang (3) hat. Claims 1. HalrleiteTelement with at least three pn junctions, two main electrodes and a control electrode, characterized in that the aauptelektrode (1) (emitter) that is located on the same Escape of the semiconductor chip as the control electrode (2), in which the control electrode the closest area has the largest and, in the area furthest from the control electrode, the smallest distance from the next pn junction (3). 2. Halbleiterelement nach Anspruch 1, dadurch gekennzeichnet, daß der Abstand des Emitters (1) vom nächsten pn-f)bergang (3), von dem der Steuerelektrode (2).am nächsten liegenden Bereich zu dem von der Steuerelektrode entferntesten Bereich, kontinuierlich abnimmt. 2. Semiconductor element according to Claim 1, characterized in that the distance of the emitter (1) from the next pn-f) transition (3), from the area closest to the control electrode (2) to the area farthest from the control electrode, decreases continuously. 3. Halbleiterelement nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß der Abstand der Steuerelektrode (2) vom nächsten pn-Übcrgang (3) kleiner ist, als der größte Abstand des ."mitters (1) von diesen. 3. Semiconductor element according to Claim 1 or 2, characterized in that the spacing the control electrode (2) from the next pn junction (3) is smaller than the largest Distance of the. "Middle (1) from these. 4. Verfahren zur Herstellung des Iialbleiterelementes nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, daß der rmitter (1) einlegiert wird. 4. Process for the production of the Iialleitelementes according to one of the preceding claims, characterized in that the rmitter (1) is alloyed. 5. Verfahren zur Herstellung des Halbleiterelementes nac':i Anspruch 4, dadurch gekennzeichnet, daß die unterschiedliche Eindringtiefe des Emitters (1) durch entsprechende Anordnung der Ge#.:,ichte beim Einlepieren eingestellt wird. 5. Method of manufacturing the semiconductor element nac ': i Claim 4, characterized in that the different penetration depths of the emitter (1) by arranging the Ge #. 6. Verfahren zur "erstelltinn des Nalbleiterelernentes nach Anspruc:: 4, dadurch gekennzeichnet, dar) die unterschiedliche Eindringtiefe des rnitters (1) curch 7instellun# eines entsprechenden Temperaturgradienten über die LegiLrurgsform bei gleiciz:näßiger Verteilung .der Ge,:ichte beim 7inlegieren eingestellt wird:6. Method for "created the Nalbleiterelernentes according to Anspruc :: 4, thereby marked, represent) the different depth of penetration of the ritter (1) by 7instellun # a corresponding temperature gradient over the legislative form at the same time: wetter Distribution of the density is set when alloying:
DE19651489696 1965-07-20 1965-07-20 Semiconductor element, in particular with an improved switch-on behavior Pending DE1489696A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEB0082919 1965-07-20

Publications (1)

Publication Number Publication Date
DE1489696A1 true DE1489696A1 (en) 1969-04-24

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ID=6981722

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19651489696 Pending DE1489696A1 (en) 1965-07-20 1965-07-20 Semiconductor element, in particular with an improved switch-on behavior

Country Status (3)

Country Link
CH (1) CH441511A (en)
DE (1) DE1489696A1 (en)
FR (1) FR1486904A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2211116A1 (en) * 1972-03-08 1973-09-13 Semikron Gleichrichterbau CONTROLLABLE SEMICONDUCTOR COMPONENT WITH FOUR LAYERS OF ALTERNATING OPPOSITE CONDUCTIVITY TYPES

Also Published As

Publication number Publication date
FR1486904A (en) 1967-06-30
CH441511A (en) 1967-08-15

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