DE1427770A1 - Verfahren zum Zerlegen einer Halbleiterscheibe in Einzelsysteme - Google Patents

Verfahren zum Zerlegen einer Halbleiterscheibe in Einzelsysteme

Info

Publication number
DE1427770A1
DE1427770A1 DE19641427770 DE1427770A DE1427770A1 DE 1427770 A1 DE1427770 A1 DE 1427770A1 DE 19641427770 DE19641427770 DE 19641427770 DE 1427770 A DE1427770 A DE 1427770A DE 1427770 A1 DE1427770 A1 DE 1427770A1
Authority
DE
Germany
Prior art keywords
semiconductor wafer
breaking down
individual systems
individual
systems
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE19641427770
Other languages
English (en)
Inventor
Walter Klossika
Georg Reinhardt
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Publication of DE1427770A1 publication Critical patent/DE1427770A1/de
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting

Description

  •

Claims (1)

  1.
    4) Verfahren nach Anspruch 2 oder 3, dadurch gekenn-
DE19641427770 1964-06-12 1964-06-12 Verfahren zum Zerlegen einer Halbleiterscheibe in Einzelsysteme Pending DE1427770A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DET0026358 1964-06-12

Publications (1)

Publication Number Publication Date
DE1427770A1 true DE1427770A1 (de) 1968-12-12

Family

ID=7552717

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19641427770 Pending DE1427770A1 (de) 1964-06-12 1964-06-12 Verfahren zum Zerlegen einer Halbleiterscheibe in Einzelsysteme

Country Status (1)

Country Link
DE (1) DE1427770A1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075102A2 (de) * 1981-09-22 1983-03-30 Siemens Aktiengesellschaft Thyristor mit einem Mehrschichten-Halbleiterkörper mit pnpn-Schichtfolge und Verfahren zu seiner Herstellung
EP0075103A2 (de) * 1981-09-22 1983-03-30 Siemens Aktiengesellschaft Thyristor mit einem Mehrschichten-Halbleiterkörper und Verfahren zu seiner Herstellung

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0075102A2 (de) * 1981-09-22 1983-03-30 Siemens Aktiengesellschaft Thyristor mit einem Mehrschichten-Halbleiterkörper mit pnpn-Schichtfolge und Verfahren zu seiner Herstellung
EP0075103A2 (de) * 1981-09-22 1983-03-30 Siemens Aktiengesellschaft Thyristor mit einem Mehrschichten-Halbleiterkörper und Verfahren zu seiner Herstellung
EP0075102A3 (en) * 1981-09-22 1983-09-21 Siemens Aktiengesellschaft Thyristor with a multi-layer pnpn semiconductor body and process for its manufacture
EP0075103A3 (de) * 1981-09-22 1983-09-28 Siemens Aktiengesellschaft Thyristor mit einem Mehrschichten-Halbleiterkörper und Verfahren zu seiner Herstellung

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