DE140818C - - Google Patents

Info

Publication number
DE140818C
DE140818C DENDAT140818D DE140818DA DE140818C DE 140818 C DE140818 C DE 140818C DE NDAT140818 D DENDAT140818 D DE NDAT140818D DE 140818D A DE140818D A DE 140818DA DE 140818 C DE140818 C DE 140818C
Authority
DE
Germany
Prior art keywords
weft
bobbin
coil
rotation
lateral axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DENDAT140818D
Other languages
German (de)
English (en)
Publication of DE140818C publication Critical patent/DE140818C/de
Active legal-status Critical Current

Links

Classifications

    • D—TEXTILES; PAPER
    • D03—WEAVING
    • D03D—WOVEN FABRICS; METHODS OF WEAVING; LOOMS
    • D03D51/00—Driving, starting, or stopping arrangements; Automatic stop motions
    • D03D51/18—Automatic stop motions
    • D03D51/34—Weft stop motions

Landscapes

  • Engineering & Computer Science (AREA)
  • Textile Engineering (AREA)
  • Looms (AREA)
DENDAT140818D Active DE140818C (enrdf_load_stackoverflow)

Publications (1)

Publication Number Publication Date
DE140818C true DE140818C (enrdf_load_stackoverflow)

Family

ID=408477

Family Applications (1)

Application Number Title Priority Date Filing Date
DENDAT140818D Active DE140818C (enrdf_load_stackoverflow)

Country Status (1)

Country Link
DE (1) DE140818C (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868137A (en) * 1987-12-29 1989-09-19 Nec Corporation Method of making insulated-gate field effect transistor
US5661048A (en) * 1995-03-21 1997-08-26 Motorola, Inc. Method of making an insulated gate semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4868137A (en) * 1987-12-29 1989-09-19 Nec Corporation Method of making insulated-gate field effect transistor
US5661048A (en) * 1995-03-21 1997-08-26 Motorola, Inc. Method of making an insulated gate semiconductor device

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