DE1257976B - Method for connecting at least two small-area electrodes, which are arranged closely next to one another on a semiconductor crystal of a semiconductor component, with connecting wires by cold welding or thermocompression - Google Patents

Method for connecting at least two small-area electrodes, which are arranged closely next to one another on a semiconductor crystal of a semiconductor component, with connecting wires by cold welding or thermocompression

Info

Publication number
DE1257976B
DE1257976B DES64016A DES0064016A DE1257976B DE 1257976 B DE1257976 B DE 1257976B DE S64016 A DES64016 A DE S64016A DE S0064016 A DES0064016 A DE S0064016A DE 1257976 B DE1257976 B DE 1257976B
Authority
DE
Germany
Prior art keywords
electrodes
wire
connecting wire
semiconductor
auxiliary wire
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES64016A
Other languages
German (de)
Inventor
Dr Richard Wiesner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL133497D priority Critical patent/NL133497C/xx
Priority to NL252977D priority patent/NL252977A/xx
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES64016A priority patent/DE1257976B/en
Priority to FR829496A priority patent/FR1259256A/en
Priority to CH753060A priority patent/CH383505A/en
Priority to GB25441/60A priority patent/GB892063A/en
Publication of DE1257976B publication Critical patent/DE1257976B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01032—Germanium [Ge]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01051—Antimony [Sb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)
  • Manufacturing Of Electrical Connectors (AREA)

Description

BUNDESREPUBLIK DEUTSCHLANDFEDERAL REPUBLIC OF GERMANY

DEUTSCHESGERMAN

PATENTAMTPATENT OFFICE

AUSLEGESCHRIFTEDITORIAL

Int. CL:Int. CL:

HOIlHOIl

Deutsche Kl.: 21g-11/02German class: 21g-11/02

Nummer: 1257 976Number: 1257 976

Aktenzeichen: S 64016 VIII c/21 gFile number: S 64016 VIII c / 21 g

Anmeldetag: 21. Juli 1959 Filing date: July 21, 1959

Auslegetag: 4. Januar 1968Open date: January 4, 1968

Das Bestreben, Transistoren mit möglichst hoher Grenzfrequenz herzustellen, führte zur Ausbildung von Transistoren mit einer extrem schmalen effektiven Basiszone. Dies führte gleichzeitig dazu, Emitter und Basis des Transistors möglichst nahe nebeneinander auf dem Halbleiterkörper anzuordnen und sehr kleinflächig auszubilden. Aber auch aus anderen Gründen sind Transistoren kleinster Abmessungen erwünscht. Um eine Vorstellung über häufig vorliegende Größenordnungen zu geben, sei darauf hingewiesen, daß es ohne weiteres möglich ist, benachbarte, z. B. als Emitter und Basis dienende Kontaktelektroden bei sogenannten Mesatransistoren in der Größe von 25 · 100 μ auf Halbleiterkristallen mit einem gegenseitigen Abstand von 10 μ herzustellen. Diese Dimensionen können noch erheblich unterschritten werden.The endeavor to produce transistors with the highest possible cutoff frequency led to the training of transistors with an extremely narrow effective base zone. This also resulted in emitters and to arrange the base of the transistor as close to one another as possible on the semiconductor body and to train very small areas. But transistors are also extremely small for other reasons he wishes. In order to give an idea of the frequently occurring orders of magnitude, it should be pointed out that that it is easily possible, adjacent, z. B. serving as emitter and base contact electrodes with so-called mesa transistors with a size of 25 · 100 μ on semiconductor crystals to establish a mutual distance of 10 μ. These dimensions can still be significantly lower will.

Weiter wird auf Halbleitergleichrichter für Höchstfrequenzen, die Kontaktierung kleinster Einkristallproben, die Kontaktierung von kleindimensionalen Hallgeneratoren und kleiner Thermoelemente oder Bolometer, wie sie für hochempfindliche Strahlungsmesser verwendet werden, hingewiesen.Furthermore, semiconductor rectifiers for maximum frequencies, the contacting of the smallest single crystal samples, the contacting of small-dimensional Hall generators and small thermocouples or Bolometers of the type used for highly sensitive radiation meters.

Bei solchen elektrischen Bauelementen tritt das Problem der Kontaktierung zweier dicht nebeneinanderliegender Umstellelektroden mit je einer Anschlußelektrode auf, was um so schwieriger ist, je kleiner die Elektroden ausgebildet und je dichter sie nebeneinander angeordnet sind.In the case of such electrical components, the problem of contacting two closely adjacent ones arises Changeover electrodes each with a connection electrode, which is more difficult ever the smaller the electrodes and the closer they are arranged side by side.

Die Erfindung bezieht sich auf ein Verfahren zum Verbinden mindestens zweier auf einem Halbleiterkristall eines Halbleiterbauelements in engem Abstand nebeneinander angeordneter kleinflächiger, durch Aufdampfen erzeugter Elektroden mit Anschlußdrähten durch Kaltschweißen oder Thermokompression, insbesondere bei der Herstellung eines Mesatransistors, und ist dadurch gekennzeichnet, daß zunächst auf der Halbleiteroberfläche zwischen den beiden Elektroden ein hochfester, dünner Hilfsdraht schräg oder senkrecht zur Verbindungslinie beider Elektroden ausgespannt wird, daß dann ein Anschlußdraht minderer Zugfestigkeit, als sie der Hilfsdraht aufweist, mit einer den Abstand der beiden Elektroden wesentlich übertreffenden Gesamtlänge unter Überbrückung des Hilfsdrahts derart über die beiden Elektroden geradlinig gespannt und mittels den gespannten Anschlußdraht gegen die Elektroden drückender Werkzeuge mit den Elektroden so verbunden wird, daß beiderseits der beiden Elektroden eine genügend große Länge des Anschlußdrahts für den weiteren elektrischen Anschluß übrigbleibt und daß schließlich unter aufrechterhaltenem Druck derThe invention relates to a method for connecting at least two on a semiconductor crystal of a semiconductor component closely spaced, small-area, electrodes produced by vapor deposition with connecting wires by cold welding or thermocompression, especially in the manufacture of a mesa transistor, and is characterized in that first a high-strength, thin auxiliary wire on the semiconductor surface between the two electrodes is stretched obliquely or perpendicular to the connecting line of the two electrodes, that then a connecting wire lesser tensile strength than the auxiliary wire has, with one the distance between the two Electrodes substantially exceeding the total length while bridging the auxiliary wire in such a way over the two electrodes stretched in a straight line and by means of the tensioned connecting wire against the electrodes pressing tools is connected to the electrodes so that both sides of the two electrodes a sufficiently large length of the connecting wire remains for the further electrical connection and that eventually under sustained pressure the

Verfahren zum Verbinden mindestens zweier auf einem Halbleiterkristall eines
Halbleiterbauelements in engem Abstand
nebeneinander angeordneter kleinflächiger
Elektroden mit Anschlußdrähten durch
Kaltschweißen oder ThermokompressionMethod for connecting at least two on a semiconductor crystal
Semiconductor component in close proximity
small-area arranged side by side
Electrodes with connecting wires through
Cold welding or thermocompression

Anmelder:Applicant:

Siemens Aktiengesellschaft, Berlin und München.Siemens Aktiengesellschaft, Berlin and Munich.

8000 München 2, Witteisbacherplatz 28000 Munich 2, Witteisbacherplatz 2

Als Erfinder benannt:Named as inventor:

Dr. Richard Wiesner, 8011 NeukeferlohDr. Richard Wiesner, 8011 Neukeferloh

die Verbindung des Anschlußdrahts mit den beiden Elekroden bewirkenden Werkzeuge der zwischen den beiden Elektroden befindliche Teil des Anschlußdrahts durch ein entsprechendes Anheben des Hilfsdrahts aufgetrennt wird.the connection of the connecting wire with the two electrodes effecting tools between the both electrodes located part of the connecting wire by lifting the auxiliary wire accordingly is separated.

Dieses Verfahren ist gegenüber einem bekannten, zum Anbringen von Anschlußdrähten an einem rohrförmigen isolierenden oder halbleitenden Körper mit metallischer Innen- und Außenbelegung dienenden Verfahren, bei dem das Röhrchen auf einen Schenkel eines in Form einer Haarnadel gebogenen Drahtes aufgeschoben und in einiger Entfernung auf die Biegung zwischen den Schenkeln der Haarnadel festgeklemmt wird, erheblich verschieden. Abgesehen davon, daß sich das erfindungsgemäße Verfahren im Gegensatz zu dem bekannten Verfahren auf das Verbinden zweier auf einem Halbleiterkristall in einem Abstand nebeneinander, kleinflächiger, durch Aufdampfen erzeugter Elektroden mit Anschlußdrähten durch Kaltverschweißen oder Thermokompression bezieht, wäre auch beim Bekannten die Verwendung eines Hilfsdrahts zum Aufreißen des Anschlußdrahts nachteilig, weil dieser Hilfsdraht in der Biegung des haarnadelförmig gebogenen Anschlußdrahts angreifen müßte und deshalb der Anschlußdraht an den Kon-This method is opposite to a known one for attaching lead wires to a tubular insulating or semiconducting body with metallic interior and exterior covering Method in which the tube is placed on one leg of a wire bent in the shape of a hairpin pushed open and clamped some distance on the bend between the legs of the hairpin becomes considerably different. Apart from the fact that the inventive method in In contrast to the known method on joining two on a semiconductor crystal at a distance next to each other, smaller area, by vapor deposition generated electrodes with connecting wires by cold welding or thermocompression relates, the use of an auxiliary wire for tearing open the connecting wire would also be with the acquaintance disadvantageous because this auxiliary wire attack in the bend of the hairpin-shaped bent connecting wire would have to and therefore the connecting wire to the

709 717/478709 717/478

taktstellen ausschließlich durch tangentialen Zug während des Aufreißens beansprucht würde.clock points would be claimed exclusively by tangential pull during the tearing open.

Notwendig für das Funktionieren des Verfahrens ist vor allem, daß die Zerreißfestigkeit des Hilfsdrahts größer ist als die des Anschlußdrahts. Aus diesem Grunde wird bevorzugt ein Hilfsdraht aus Tantal, Wolfram oder Molybdän verwendet. Der Anschlußdraht kann dann in üblicher Weise aus Gold bestehen. Für die Verbindung der Kontaktierungsstellen mit dem darübergelegten Anschlußdraht kommen eine Reihe von Befestigungsarten, wie Löten, Schweißen, Kaltschweißen und Legieren, in Frage, deren Auswahl sich nach der Art der Materialien des Anschlußdrahts und der zu kontaktierenden Stellen der betreffenden Anordnung richtet. Insbesondere kann auch die sogenannte Thermokompression verwendet werden, welche bekanntlich als eine abgeänderte Art des Kaltschweißens aufgefaßt werden kann. Bekanntlich werden beim Kaltschweißen die zu verbindenden Metallteile lediglich durch Druck, also ohne Wärmezufuhr, verschweißt. Bei Halbleiterbauelementen ist jedoch wegen der Sprödigkeit vieler Halbleitermaterialien eine solche Verbindungsart nur mit Vorsicht anzuwenden. Es empfiehlt sich daher, die als Thermokompression bezeichnete Abänderung des Kaltschweißens anzuwenden, bei welcher der zum Verbinden erforderliche. Druck infolge zusätzlicher Wärmezufuhr erheblich niedriger als beim Kaltschweißen gehalten werden kann.Above all, it is necessary for the operation of the method that the tensile strength of the auxiliary wire larger than that of the lead wire. For this reason, an auxiliary wire is preferred Tantalum, tungsten or molybdenum are used. The connecting wire can then be made in the usual way Consist of gold. For connecting the contact points with the connecting wire placed over them A number of types of fastening, such as soldering, welding, cold welding, and alloying, come in Question, the choice of which depends on the type of materials of the connecting wire and the one to be contacted Bodies of the order in question. In particular, the so-called thermocompression can also be used can be used, which is known to be understood as a modified type of cold welding can be. It is known that the metal parts to be connected are only welded by pressure, i.e. without the supply of heat. In semiconductor components, however, is because of the Brittleness of many semiconductor materials, such a type of connection should only be used with caution. It it is therefore advisable to use the modification of cold welding known as thermocompression, at which the required to connect. Pressure due to additional heat supply is considerable can be kept lower than with cold welding.

An Hand der als Ausführungsbeispiel anzusehenden F i g. 1 und 2 soll das Wesen der Erfindung kurz dargelegt werden. In den Figuren bedeutet 1 den zu kontaktierenden Halbleiterkörper, 2 und 3 die zu kontaktierenden Stellen des Halbleiterkörpers, ζ. Β. die aufgedampften und einlegierten Elektroden eines Kleinsttransistors. Das Bezugszeichen 4 ist der Hilfsdraht, welcher zwischen den beiden Kontaktierungsstellen 2 und 3 geführt und mittels des Rahmens 5 in gespannter Lage unmittelbar auf bzw. nahe über der Halbleiteroberfläche gehalten wird.On the basis of FIG. 1 and 2 are intended to briefly outline the essence of the invention be set out. In the figures, 1 denotes the semiconductor body to be contacted, 2 and 3 denotes the to contacting points of the semiconductor body, ζ. Β. the vapor-deposited and alloyed electrodes of one Miniature transistor. The reference number 4 is the auxiliary wire which is between the two contacting points 2 and 3 out and by means of the frame 5 in the tensioned position directly on or close to the semiconductor surface is held.

In F i g. 1 ist diejenige Phase des erfindungsgemäßen Verfahrens dargestellt, in welcher der Anschlußdraht 6 durch Thermokompression mittels der Befestigungsstempel 1, 8 verschweißt wird.In Fig. 1 shows that phase of the method according to the invention in which the connecting wire 6 is welded by thermocompression by means of the fastening stamp 1, 8.

In F i g. 2 ist die Phase des Auftrennens des kontaktierenden Drahtes 6 gezeigt. Zu diesem Zweck wird der Hilfsdraht 4, beispielsweise parallel zu sich selber, nach oben gezogen und übt auf diese Weise auf den Anschlußdraht 6 eine Kraft aus, welche schließlich zum Einreißen desselben führt. Dabei empfiehlt es sich, die mechanische Festigkeit der Verbindungen des Kontaktierungsdrahts 6 mit den Kontaktstellen 2,3 während des Auftrennens des Anschlußdrahts durch zusätzliche Mittel zu unterstützen. So können z. B. die Befestigungsstempel 7, 8 während des Hochreißens des Kontaktierungsdrahts 8 diesen an den Kontaktierungsstellen nach unten drükkenund auf diese Weise die mechanischeBelastung der Kontaktierungsstellen vermeiden bzw. vermindern.In Fig. 2 shows the phase of severing the contacting wire 6. For this purpose, the auxiliary wire 4 is pulled upwards, for example parallel to itself, and in this way exerts a force on the connecting wire 6 which ultimately leads to its tearing. It is recommended that the mechanical strength of the connections between the contact wire 6 and the contact points 2, 3 be supported by additional means while the connection wire is being separated. So z. B. while the contacting wire 8 is being torn up, the fastening stamps 7, 8 press it downwards at the contacting points and in this way avoid or reduce the mechanical stress on the contacting points.

Das Verfahren gemäß Erfindung ist insbesondere zum Kontaktieren von Halbleiteranordnungen mit zwei eng nebeneinanderliegenden Kontaktstellen gedacht. Dabei steht besonders ein für den Betrieb bei sehr hohen Frequenzen entwickelter Transistor im Vordergrund des Interesses. Dieser Transistor wird folgendermaßen hergestellt. In einen Halbleiterkristall des einen Leitungstyps werden Störstellen, die den entgegengesetzten Leitungstyp erzeugen, aus der Gasphase eindiffundiert, z. B. Arsenatome in einen p-leitenden Germaniumkristall von 0,8 Ohmzentimeter bei einer Temperatur von etwa 6000C. Die Diffusion wird so lange durchgeführt, bis der Halbleiterkristall an seiner Oberfläche innerhalb einer dünnen Schicht den entgegengesetzten Leitungstyp wie das Grundmaterial aufweist. Diese umdotierte Schicht wird durch Aufdampfen zweier Metallflecken kontaktiert, die in möglichst engem Abstand voneinander gehalten werden. Der eine der beiden Metallflecken erzeugt den gleichen Leitungstyp wie er im Grundmaterial vorliegt (z. B. Aluminium), während der andere gegenüber dem Halbleitermaterial entweder neutral ist oder den gleichen Leitungstyp wie er in der umdotierten Schicht herrscht, erzeugt (z. B. eine Gold-Antimon-Legierung). Die umdotierte Schicht wird dabei vorzugsweise bis auf die unmittelbare Umgebung der beiden Aufdampfflecken wieder weggeätzt. Außerdem werden die beiden als Elektroden dienenden Aufdampfflecken durch eine Wärmebehandlung in den Halbleiterkörper einlegiert, so daß die eine der beiden Elektroden notwendig einen pn-übergang mit der umdotierten Schicht bilden muß.The method according to the invention is intended in particular for contacting semiconductor arrangements with two closely adjacent contact points. A transistor developed for operation at very high frequencies is of particular interest. This transistor is manufactured as follows. In a semiconductor crystal of one conductivity type, impurities which generate the opposite conductivity type are diffused from the gas phase, e.g. As arsenic atoms in a p-type germanium crystal of 0.8 ohm-cm at a temperature of about 600 0 C. The diffusion is so long carried out until the semiconductor crystal at its surface within a thin layer has the opposite conductivity type as the base material. This redoped layer is contacted by vapor deposition of two metal spots, which are kept as close as possible to one another. One of the two metal spots generates the same conductivity type as it is in the base material (e.g. aluminum), while the other is either neutral to the semiconductor material or generates the same conductivity type as it is in the redoped layer (e.g. a Gold-antimony alloy). The redoped layer is preferably etched away again except for the immediate vicinity of the two vapor deposition spots. In addition, the two vapor deposition spots serving as electrodes are alloyed into the semiconductor body by a heat treatment, so that one of the two electrodes must necessarily form a pn junction with the redoped layer.

Der Transistor ist für den Betrieb bei sehr hohen Frequenzen gedacht und muß zu diesem Zweck mit sehr eng nebeneinanderliegenden und kleinflächigen Elektroden versehen werden, die vorzugsweise als Emitter und als Basis dienen. Der Halbleiterkristall wird mit einer weiteren vorzugsweise sperrfrei aufgebrachten Elektrode versehen, die vorzugsweise als Kollektor betrieben wird.The transistor is intended for operation at very high frequencies and must be used for this purpose very closely spaced and small-area electrodes are provided, which are preferably used as Emitter and serve as a base. The semiconductor crystal is applied with a further preferably barrier-free Electrode provided, which is preferably operated as a collector.

Claims (3)

Patentansprüche:Patent claims: 1. Verfahren zum Verbinden mindestens zweier auf einem Halbleiterkristall eines Halbleiterbauelements in engem Abstand nebeneinander angeordneter kleinflächiger, durch Aufdampfen erzeugter Elektroden mit Anschlußdrähten durch Kaltschweißen oder Thermokompression, dadurch gekennzeichnet, daß zunächst auf der Halbleiteroberfläche zwischen den beiden Elektroden ein hochfester, dünner Hilfsdraht schräg oder senkrecht zur Verbindungslinie beider Elektroden ausgespannt wird, daß dann ein Anschlußdraht minderer Zugfestigkeit als sie der Hilfsdraht aufweist, mit einer den Abstand der beiden Elektroden wesentlich übertreffenden Gesamtlänge unter Überbrückung des Hilfsdrahts derart über die beiden Elektroden geradlinig gespannt und mittels den gespannten Anschlußdraht gegen die Elektroden drückender Werkzeuge mit den Elektroden so verbunden wird, daß beiderseits der beiden Elektroden eine genügend große Länge des Anschlußdrahts für den weiteren elektrischen Anschluß übrigbleibt und daß schließlich unter aufrechterhaltenem Druck der die Verbindung des Anschlußdrahts mit den beiden Elektroden bewirkenden Werkzeuge der zwischen den beiden Elektroden befindliche Teil des Anschlußdrahts durch ein entsprechendes Anheben des Hilfsdrahts aufgetrennt wird.1. Method for connecting at least two on a semiconductor crystal of a semiconductor component closely spaced small areas arranged next to one another, produced by vapor deposition Electrodes with connecting wires by cold welding or thermocompression, thereby characterized in that first on the semiconductor surface between the two Electrodes a high-strength, thin auxiliary wire at an angle or perpendicular to the connecting line of the two Electrodes is stretched, that then a connecting wire of lower tensile strength than they Has auxiliary wire, with a total length significantly exceeding the distance between the two electrodes so stretched in a straight line over the two electrodes by bridging the auxiliary wire and by means of tools pressing against the electrodes by means of the tensioned connecting wire the electrodes is connected so that on both sides of the two electrodes a sufficiently large Length of the connecting wire remains for the further electrical connection and that finally while maintaining pressure of the connection of the connecting wire to the two Electrodes effect tools, the part of the connecting wire located between the two electrodes is separated by lifting the auxiliary wire accordingly. 2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, daß ein Hilfsdraht aus Tantal, Wolfram oder Molybdän und ein Anschlußdraht aus Gold verwendet wird.2. The method according to claim 1, characterized in that an auxiliary wire made of tantalum, Tungsten or molybdenum and a connecting wire made of gold is used. 3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß der Hilfsdraht und gegebenenfalls auch der Anschlußdraht durch Haltern in einem Rahmen oder Bogen gespannt wird.3. The method according to claim 1 or 2, characterized in that the auxiliary wire and if necessary, the connecting wire is also stretched by holding it in a frame or arch will. In Betracht gezogene Druckschriften:Considered publications: Deutsche Auslegeschrift Nr. 1021080; Zeitschrift »Journ. appl. Phys.«, Bd. 28, Nr. 8, S. 923.German Auslegeschrift No. 1021080; Journal »Journ. appl. Phys. «, Vol. 28, No. 8, p. 923. 1957,1957, Hierzu 1 Blatt Zeichnungen1 sheet of drawings 709 717/478 12.67 © Bundesdruckerei Berlin709 717/478 12.67 © Bundesdruckerei Berlin
DES64016A 1959-07-21 1959-07-21 Method for connecting at least two small-area electrodes, which are arranged closely next to one another on a semiconductor crystal of a semiconductor component, with connecting wires by cold welding or thermocompression Pending DE1257976B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL133497D NL133497C (en) 1959-07-21
NL252977D NL252977A (en) 1959-07-21
DES64016A DE1257976B (en) 1959-07-21 1959-07-21 Method for connecting at least two small-area electrodes, which are arranged closely next to one another on a semiconductor crystal of a semiconductor component, with connecting wires by cold welding or thermocompression
FR829496A FR1259256A (en) 1959-07-21 1960-06-09 Method for attaching contacts to semiconductor elements or other electrical parts
CH753060A CH383505A (en) 1959-07-21 1960-07-01 Method for contacting semiconductor arrangements or other electrical components with at least two closely adjacent, small-area contact points
GB25441/60A GB892063A (en) 1959-07-21 1960-07-21 Improvements in or relating to methods of applying connecting wires to electrodes on electrical components

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES64016A DE1257976B (en) 1959-07-21 1959-07-21 Method for connecting at least two small-area electrodes, which are arranged closely next to one another on a semiconductor crystal of a semiconductor component, with connecting wires by cold welding or thermocompression

Publications (1)

Publication Number Publication Date
DE1257976B true DE1257976B (en) 1968-01-04

Family

ID=7496826

Family Applications (1)

Application Number Title Priority Date Filing Date
DES64016A Pending DE1257976B (en) 1959-07-21 1959-07-21 Method for connecting at least two small-area electrodes, which are arranged closely next to one another on a semiconductor crystal of a semiconductor component, with connecting wires by cold welding or thermocompression

Country Status (4)

Country Link
CH (1) CH383505A (en)
DE (1) DE1257976B (en)
GB (1) GB892063A (en)
NL (2) NL252977A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945670C2 (en) * 1979-11-12 1982-02-11 Siemens AG, 1000 Berlin und 8000 München Electrically conductive connection of the active parts of an electrical component or an integrated circuit with connection points

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1021080B (en) * 1955-11-05 1957-12-19 Philips Nv Method for attaching connecting wires to electrical parts with a tubular body made of dielectric or semiconducting material and parts provided with connecting wires according to this method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1021080B (en) * 1955-11-05 1957-12-19 Philips Nv Method for attaching connecting wires to electrical parts with a tubular body made of dielectric or semiconducting material and parts provided with connecting wires according to this method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2945670C2 (en) * 1979-11-12 1982-02-11 Siemens AG, 1000 Berlin und 8000 München Electrically conductive connection of the active parts of an electrical component or an integrated circuit with connection points

Also Published As

Publication number Publication date
GB892063A (en) 1962-03-21
NL133497C (en) 1900-01-01
NL252977A (en) 1900-01-01
CH383505A (en) 1964-10-31

Similar Documents

Publication Publication Date Title
DE1127488B (en) Semiconductor device made of silicon or germanium and process for their manufacture
DE1204751B (en) Semiconductor component with a disk-shaped housing and method for producing such a component
DE1514254A1 (en) Semiconductor device
DE112019006032T5 (en) SEMI-CONDUCTOR COMPONENT
DE1193169B (en) Process for the production of silicon semiconductor devices
DE1614148A1 (en) Method for producing an electrode for semiconductor components
DE102017129924B4 (en) ENCAPSULATED, TERMINAL LESS PACKAGE WITH AT LEAST PARTIALLY EXPOSED INSIDE WALL OF A CHIP CARRIER, ELECTRONIC DEVICE, METHOD FOR MANUFACTURING A PACKAGE WITHOUT TERMINAL LADIES AND PREPARING METHOD FOR ESTABLISHING A PACKAGE
DE1190107B (en) Thermocompression method for attaching the contact electrode or lead of a semiconductor component
DE1257976B (en) Method for connecting at least two small-area electrodes, which are arranged closely next to one another on a semiconductor crystal of a semiconductor component, with connecting wires by cold welding or thermocompression
DE1170555B (en) Method for manufacturing a semiconductor component with three zones of alternating conductivity types
DE1182354B (en) transistor
DE102020007109A1 (en) SEMI-CONDUCTOR CLIP AND RELATED PROCEDURES
DE1199408B (en) Process for the production of semiconductor components and semiconductor component produced according to this process
AT201117B (en) Method for connecting a metallic conductor to a semiconductor body
DE1163975C2 (en) Process for improving the electrical properties of semiconductor devices
DE969508C (en) Method for producing a controlled, electrically asymmetrically conductive semiconductor arrangement
DE102018207651B4 (en) SEMICONDUCTOR DEVICES HAVING A METAL SILICIDE LAYER AND METHODS FOR THEIR PRODUCTION
DE2937989A1 (en) SEMICONDUCTOR DEVICE
AT244390B (en) Semiconductor device built into a housing
DE1100818B (en) Process for the production of a semiconductor arrangement with a single-crystal, disk-shaped base body made of silicon
DE2038283C3 (en) Semiconductor component
DE1116829B (en) Method for manufacturing a semiconductor device
DE1297238B (en) Method for connecting at least two small-area electrodes, arranged next to one another at some distance on a semiconductor crystal of a semiconductor component, with connecting wires by cold welding or thermocompression
DE1141725B (en) Silicon rectifier and process for its manufacture
DE1295237B (en) Pressure sensitive semiconductor devices and methods of making them