DE1255205C2 - Method for encapsulating a semiconductor body coated with an oxide layer - Google Patents

Description

35 see electrodes extending through the glass body,

It is known from US Pat. No. 2,981,977 that such a method is applied to the semiconductor body, in the case of one provided with zones and one with an oxide that the wire ends coat the ohmic electrodes coated semiconductor body for Kqntaktie- stir and when fusing the glass body with tion of the zones in the oxide layer breakthroughs and the ohmic electrodes are connected, or Ohmic electrodes to the zones on the exposed 40 that a preformed glass body with puddled Manufacture semiconductor surface. On the zenen wires and breakthroughs at the points of the Ohmic electrodes can be supply lines in the form of such ohmic electrodes to be contacted attached by wires. is applied to the semiconductor body that the From the magazine "Electronics" on November 25, 1960, breakthroughs with the ohmic electrodes P. 79, it is known, for the purpose of the surface pass- 45 cover, and that after the fusing of the glazing of semiconductor components, the semiconductor body with the oxide layer, the ohmic electrical body to passivate with an oxide layer, which trode with one wire each over the glass organic Contains groups. Electrically conductive conductive path applied from the German body. Patent specification 969 465 is also known to be tied with.

Conducted semiconductor body of a half 50 From the magazine "IBM Technical Disclosure conductor component directly with a moisture bulletin ", Vol. 3, No. 12 (May 1961), pp. 30 and 31, Although an impermeable glaze-like oxide layer was a method of applying a cover, Semiconductor coated on the side with this oxide layer - The invention is primarily intended to make known the body with at least one pn junction, encapsulate semiconductor components with a half-55, initially with the semiconductor body on one side with the Conductor body and at least one supply line is coated with an oxide layer in which the contact zone of the semiconductor body using the zones breakthroughs and ohmic therein Glass as an embedding medium improves and simplifies electrodes to the zones on the exposed half. The glass embedding should be made to the half-leather surface to which the electrical component serve directly as a support. Finally, 60 troden supply lines are attached. From French patent specification 1 267 686, however, the glass is in this known method a method of encapsulating a partially with prior to attaching the leads and prior to the an oxide layer coated semiconductor body with production of the ohmic electrodes on the oxide at least a pn junction and with supply lines layer applied and not with the Oxydzu fused the individual zones using glass 65 layer. The glass layer can thus known, which after attaching supply lines to the semiconductor element not immediately as a support Gen with parts of the supply lines and with the Oxyd- serve, especially since a fusion of the glass layer layer is fused. With this procedure with the supply line is not possible and the use

3 4

The formation of relatively thick layers of glass makes it more difficult. Fig. 1, B removed. In a subsequent diffu-

is that the glass layer for contacting the zones sion process is an inserted n-zone 42 according to

must be etched through. Fig. 1, C formed. During the diffusion process

Compared to the known method for thickening the oxide layer, while a

encapsulate a semiconductor body by means of a glass 5 new oxide layer 43 on the exposed surface

layer, the invention has the advantage that one forms. By applying a subsequent

significantly higher temperatures - over 1000 ° C - masking process using photo

can use for oxidation. A considerable amount of conductive varnish is applied and an etching

Lich thicker oxide layers are obtained so that a diffraction 44 according to FIG. 1, D is produced, which with

fusion of harmful contaminants from the io of the upper surface of the inserted zone 42 to

molten glass in the semiconductor body is impossible to cover.

is borrowed. There is therefore a greater degree of play, in a subsequent diffusion process of p-doped

Space in the selection of the glasses and the material-generating impurities is used

in the supply lines, because the latter in p-Erfiri- Zorie46 according to Fig. 1, E generated. To do this,

Apply only after oxidation. 15 notice that the oxide layer during this

As a material for the lead wires, before the diffusion process, a metal is used again over the entire upper part, which approximately expands the area of the semiconductor body,
the same coefficient of expansion as glass. The additional ones are shown on the basis of FIGS. 1, F. Work steps for the production of the component

A metal alloy can be used for this, 20 refines. These consist of a suitable masking soft with a composition of about 43% nickel and etching processes for the formation of openings, and a remainder of iron. The metal of which 47 with the p-conducting emitter zone 46, 48 can be provided with a copper jacket, with the η-conducting base zone 42 and 49 with which is connected to the adjacent p-conducting collector zone by a suitable connection. Ensure glass. The wires can also be made of vapor deposition or other known Verfaheiner alloy, which are substantially ren according to Fig. 1, G ohmic contacts 51, the same expansion coefficient as glass on- '52 and 53 on the corresponding emitter, base and generally made of 29% nickel, 17% and attached collector zones.
Cobalt, the remainder being iron. Of course, the same procedure can be used

The features and advantages of the invention are also intended to be used when encapsulating other types of halves following in connection with the drawing ladder components, for example a switchboard will. In . ment with four zones.

F i g. 1 are the first steps in the Her- After F i g. 2, A becomes a preformed glass body

position of the semiconductor component shown; 66 with fused leads in the form of

Fig. 2 illustrates a method of contacting glass-separated leads 67

embedding using a preformed glass with the top surface of one in FIG. 1, G dar-

body; brought brought semiconductor device, which a

Fig. 3 illustrates a process with the oxide layer and separate electrodes 51α and 52α

Features of the invention using a. The arrangement is heated to the glass

preformed glass body; 40 to adhere to the top surface

F i g. 4 shows a section along the line 9-9 and the connecting wires with the electrodes according to FIG

of Fig. 3. Fig. 2, B to be soldered. Finally, the arrangement

An encapsulated semiconductor structure is thus obtained that is immersed in molten glass around which

element, in which the semiconductor component is to be covered with glass 68 from the rest of the surface.

Glass layer is supported, which the semiconductor body 45 Fig. 3, A illustrates a further embodiment

protects against environmental conditions. implementation of the method according to the invention

. It should be noted that the various zones using a preformed glass body,

of the semiconductor body against contamination from The preformed glass body 76 contains openings

the glass layer through the oxide layer on the upper 77 and thickenings 78 with embedded therein

surface of the semiconductor body are protected. The 50 connecting wires79. Fig. 3, B shows the on the

Impurities from the glass can consequently not adhere to the preformed glass surface adhering to the upper surface.

the different zones as harmful or doping bodies. Figures 3, C and 4 illustrate the

rende impurities occur when the hot production of the ohmic connections to the

Glass on the surface of the semiconductor body on electrodes SIa and 52a by vapor deposition of metal

is brought. Boron or other harmful contaminants on certain surface areas of the

cleaning can therefore not damage the formed glass body.

Cause semiconductor component. The unwanted capacity of the vaporized

Fig. 1 schematically illustrates the interconnects due to the thickness of the glass

Operations in the production of a Planarran- reduced compared to the capacity, which is in the

sistors. In Fig. 1, A is a plate 11 made of p-conductors 60 direct vapor deposition of the interconnects on the

the semiconductor material shown. The platelet would result in an oxide layer.

It should also be noted that the glass layer

exposed to a dying atmosphere to produce an oxide - essentially the same expansion coefficient -

to form layer 21 on the surface. By means of should have such as a used

Suitable masking and etching processes are used for the 65 semiconductor bodies made of silicon. So that becomes the danger

Oxide layer over certain surface areas of cracking due to temperature changes in the

for producing a breakthrough 41 according to the glass layer reduced to a minimum.

1 sheet of drawings

Claims (1)

1 2 Claim · ^w * ^rc * ^ ^e oxide layer on the exposed part of the Semiconductor body only after attaching the supply Process for encapsulating a with a conduit and etching made. After that, will Oxide produced by thermal oxidation - the encapsulation of the semiconductor body under layer-coated semiconductor body with at least 5 turns of glass carried out with the oxide at least one pn junction and layer is fused with leads. In this order of in the form of wires to the individual zones production of semiconductor components can be the using glass, which after oxidation of the semiconductor surface is only relatively Attaching the supply lines with parts of the too low temperatures to be carried out lines and fused with the oxide layer, the diffusion of undesired impurities is, characterized in that to be connected to the lead in the semiconductor body next prevent the semiconductor body with the oxide layer. Otherwise you have to use the leads is coated that then provided for contacting a protective layer or one is in the the zones in the oxide layer narrowed openings and choice of material with regard to the supply lines, therein ohmic electrodes to the zones on the free 15 The object of the invention is to avoid this laid semiconductor surface are produced, disadvantages. that a glass body shaped in this way is then incorporated. The invention relates to a method for fusing Wires that are in place of the capsules one with a thermal oxidation ohmic electrodes to be contacted by means of semiconductor electrodes coated with an oxide layer Extending glass body, in this way on the half-body with at least one pn junction and with Conductor body is applied that the wire leads in the form of wires to the individual end up touching the ohmic electrodes and zones using glass, which after when fusing the glass body with the attaching of supply lines, at most with parts Ohmic electrodes are connected, or the leads and melted with the oxide layer a preformed glass body with a, 25 zen is. The disadvantages of the French Paschmolzenen Wires and breakthroughs are known to the tentschrift 1 267 686 process Making the ohmic electrical to be contacted is avoided according to the invention by initially Trode in this way on the semiconductor body on the semiconductor body coated with the oxide layer is brought that the breakthroughs with the is that then to contact the zones in ohmic electrodes cover, and that after 30 the oxide layer breakthroughs and ohmic therein Fusion of the glass body with the oxide electrodes to form the zones on the exposed half-layer the ohmic electrodes are made with a leather surface each, so that one Wire over a shaped glass body with melted wires attached to the glass body, Interconnect are connected in an electrically conductive manner. which are located at the point of the ohmic