DE1238103B - Method for producing a semiconductor component - Google Patents
Method for producing a semiconductor componentInfo
- Publication number
- DE1238103B DE1238103B DE1962S0079771 DES0079771A DE1238103B DE 1238103 B DE1238103 B DE 1238103B DE 1962S0079771 DE1962S0079771 DE 1962S0079771 DE S0079771 A DES0079771 A DE S0079771A DE 1238103 B DE1238103 B DE 1238103B
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor
- etchant
- passivation
- connecting conductors
- semiconductor component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 238000000034 method Methods 0.000 claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 238000000576 coating method Methods 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 239000010953 base metal Substances 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 239000011253 protective coating Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims description 2
- 238000005476 soldering Methods 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000010970 precious metal Substances 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002085 persistent effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Description
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. Cl.:Int. Cl .:
HOIlHOIl
Deutsche Kl.: 21 g-11/02 German class: 21 g- 11/02
Nummer: 1 238 103Number: 1 238 103
Aktenzeichen: S 79771 VIII c/21 gFile number: S 79771 VIII c / 21 g
Anmeldetag: 5. Juni 1962Filing date: June 5, 1962
Auslegetag: 6. April 1967Opened on: April 6, 1967
Bekanntlich müssen bei der Herstellung von Halbleiterbauelementen verschiedene Ätzvorgänge zur Reinigung der Oberfläche durchgeführt werden. Eine einwandfreie Reinigung der Oberflächen läßt sich jedoch mit einem Ätzmittel nur dann erreichen, wenn dieses sich während des Ätzvorganges nicht verunreinigt. Das Ätzmittel darf daher nicht mit solchen Bauelementen in Berührung kommen, die sich dabei auflösen würden. Man hat daher bereits vorgeschlagen, derartige Teile, insbesondere Elektroden, durch Schutzschichten abzudecken oder mit einem Überzug aus einem Edelmetall, wie Gold, zu versehen. Abgesehen davon, daß Edelmetalle teuer sind, hat ein Überzug mit Gold noch den zusätzlichen Nachteil, daß Gold mit der Bleikomponente des Lotes spröde Verbindungen bildet, die die Lötstelle nachteilig beeinflussen. Ferner ist es bekannt, den Ätzvorgang so durchzuführen, daß das Ätzmittel durch mechanische Vorrichtungen von Teilen aus unedlem Metall ferngehalten wird. Dabei müssen aber die einzelnen Bauelemente in bestimmte Positionen gebracht werden, wodurch die Durchführung des Verfahrens erheblich erschwert wird.It is known that various etching processes must be carried out for cleaning in the manufacture of semiconductor components the surface. A perfect cleaning of the surfaces can be but only achieve with an etchant if this does not become contaminated during the etching process. The etchant must therefore not be used with such Components come into contact that would dissolve. It has therefore already been suggested to cover such parts, in particular electrodes, with protective layers or with a coating made of a precious metal such as gold. Apart from the fact that precious metals are expensive, a Coating with gold has the additional disadvantage that gold becomes brittle with the lead component of the solder Forms connections that adversely affect the solder joint. It is also known that the etching process perform that the etchant is kept away from parts made of base metal by mechanical devices will. However, the individual components must be brought into certain positions, whereby the implementation of the method is made considerably more difficult.
Die Erfindung bezieht sich auf ein Verfahren zum Herstellen eines Halbleiterbauelementes, bei dem die mit den Elektroden des Halbleiterelementes durch Lötung oder Schweißung verbundenen und aus einem gegenüber dem zur Ätzung der Halbleiteranordnung benutzten Ätzmittel nicht inerten Werkstoff bestehenden Anschlußleiter mit einem gegenüber dem Ätzmittel inerten metallischen Schutzüberzug versehen werden.The invention relates to a method for producing a semiconductor component in which the connected to the electrodes of the semiconductor element by soldering or welding and off a material that is not inert to the etchant used to etch the semiconductor arrangement existing connection conductor with a metallic protective coating which is inert towards the etchant be provided.
Der Erfindung liegt die Aufgabe zugrunde, die Verwendung von Anschlußelementen aus unedlem Material zu ermöglichen und zugleich den bisher üblichen Aufwand zum Schutz dieser Elemente gegen das Ätzmittel herabzusetzen.The invention has for its object the use of connecting elements made of non-noble To enable material and at the same time the usual effort to protect these elements against to degrade the etchant.
DieErfindung besteht darin, daß zur Herstellung des Schutzüberzuges auf den Anschlußleitern eine Schicht aus unedlem Metall aufgebracht wird, die anschließend einer Passivierungsbehandlung unterzogen wird.The invention consists in that for the production of the protective coating on the connecting conductors a layer made of base metal, which is then subjected to a passivation treatment.
Unter »Passivität« ist dabei ein bei unedlen Metallen (Chrom, Eisen, Nickel, Kobalt, Aluminium, Zink) vorübergehend auftretender Zustand zu verstehen, in welchem die Metalle die chemische Wider-Standskraft von Edelmetallen aufweisen. Die Überführung eines solchen unedlen Elementes aus dem normalen Zustand in den passiven Zustand wird »Passivierung« genannt. Das passive Verhalten der Elemente wird zum Beispiel durch Eintauchen in konzentrierte Salpetersäure oder durch anodische Polarisation herbeigeführt.In the case of base metals (chromium, iron, nickel, cobalt, aluminum, Zinc) to understand temporarily occurring state in which the metals the chemical resistance force of precious metals. The transfer of such a base element from the normal state to passive state is called "passivation". The passive behavior of the Elements is made for example by immersion in concentrated nitric acid or by anodic Polarization brought about.
Verfahren zum Herstellen eines Halbleiterbauelementes Method for manufacturing a semiconductor component
Anmelder:Applicant:
Siemens Aktiengesellschaft, Berlin und München, Erlangen, Werner-von-Siemens-Str. 50Siemens Aktiengesellschaft, Berlin and Munich, Erlangen, Werner-von-Siemens-Str. 50
Als Erfinder benannt:
Dipl.-Ing. Udo Lob,
Richard Billhardt, MünchenNamed as inventor:
Dipl.-Ing. Udo praise,
Richard Billhardt, Munich
Einzelheiten der Erfindung werden im folgenden an Hand eines Ausführungsbeispieles erläutert.Details of the invention are explained below using an exemplary embodiment.
In der Figur bezeichnen einen aus Eisen oder Kupfer bestehenden grundplattenförmigen Gehäuseteil, bestehend aus einem plattenförmigen Teil 2 und einem von seiner oberen Fläche ausladenden Sockelteil 3. Der Gehäuseteil 1 ist an seiner Oberfläche mit einem Überzug 4, z. B. aus Nickel, versehen. Mit 5 ist das Halbleiterelement bezeichnet. Dieses ist z. B. eine Diode auf der Basis eines schwach p-leitenden einkristallinen Siliziumausgangskörpers, in den zur Erzeugung der notwendigen dotierten Bereiche bestimmten elektrischen Leitungstyps von der oberen Fläche aus einer aufgebrachten Dotierungssubstanz z. B. Phosphor als Donatoren liefernder Stoff und von der unteren Fläche aus einer anderen aufgebrachten Dotierungsubstanz z. B. Bor als Akzeptoren liefernder Stoff eindiffundiert worden sind. Mit 6 ist wieder ein aus Eisen oder Kupfer bestehender elektrischer Anschlußkörper bezeichnet, der an seiner Oberfläche mit einem Überzug 7 aus Nickel versehen ist. Der Halbleiterelementekörper 5 ist an seiner oberen und seiner unteren Elektrodenfläche mittels je einer Lotschicht 8 bzw. 9, z. B. aus einer Blei-Zinn-Legierung, mit den beiden elektrischen Anschlußkörpern 1 bzw. 6 verlötet worden. Die bis ta diesen Zustand gefertigte Halbleiterbauelementeanordnung könnte nunmehr unbedenklich gegen eine unerwünschte Auflösung seiner metallischen, mit dem Nickelüberzug versehenen Teile in eine Ätzmittellösung gebracht oder mit einer solchen zusammengebracht werden, die z. B. im wesentlichen aus etwa gleichen Volumenanteilen von 40- bis 50prozen tiger Flußsäure und 65- bis 70prozentiger Salpetersäure besteht, denn die beiden Teile 1 und 6 werden an ihrem Nickelüberzug, sobald dieser mit dem Ätzmittel an seiner Oberfläche in Berührung kommt, an dieser durch den stattfindenden Passivierungsprozeß beständig gemacht. Das Ätzmittel kann somitIn the figure denote a base plate-shaped housing part made of iron or copper, consisting of a plate-shaped part 2 and a base part 3 projecting from its upper surface. B. made of nickel. The semiconductor element is denoted by 5. This is e.g. B. a diode on the basis of a weakly p-conducting monocrystalline silicon starting body, in the specific electrical conduction type for generating the necessary doped areas from the upper surface of an applied dopant z. B. phosphorus as a donor supplying substance and from the lower surface of another applied dopant z. B. boron as an acceptor supplying substance have been diffused. With 6 an existing iron or copper electrical connection body is again referred to, which is provided on its surface with a coating 7 made of nickel. The semiconductor element body 5 is on its upper and its lower electrode surface by means of a solder layer 8 and 9, for. B. made of a lead-tin alloy, with the two electrical connection bodies 1 and 6 respectively. The up to ta this state manufactured semiconductor component arrangement could now be brought into an etchant solution or brought together with such a solution, which z. B. consists essentially of approximately equal proportions by volume of 40 to 50 percent hydrofluoric acid and 65 to 70 percent nitric acid, because the two parts 1 and 6 are on their nickel coating as soon as it comes into contact with the etchant on its surface, through this made persistent the passivation process taking place. The etchant can thus
■ ■ :■' ' 709 548/283■ ■ : ■ '' 709 548/283
durch sonst von den Anschlußkörpern gelöste Teile nicht verunreinigt werden und behält den erwünschten Reinheitsgrad.are not contaminated by parts otherwise loosened from the connection bodies and maintains the desired Degree of purity.
Das Aufbringen der Metallüberzüge kann z. B. durch Aufdampfen, Aufspritzen, nach einem galvanischen oder vorzugsweise nach einem stromlosen Abscheidungsverfahren erfolgen.The application of the metal coatings can, for. B. by vapor deposition, spraying, after a galvanic or preferably by an electroless deposition process.
Claims (6)
Deutsche Auslegeschriften Nr. 1 086 350,
097 574;Considered publications:
German Auslegeschrift No. 1 086 350,
097 574;
ySA.-Patentschrift Nr. 2 863 105.British Patent No. 885 137;
ySA. Patent No. 2,863,105.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1962S0079771 DE1238103B (en) | 1962-06-05 | 1962-06-05 | Method for producing a semiconductor component |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE1962S0079771 DE1238103B (en) | 1962-06-05 | 1962-06-05 | Method for producing a semiconductor component |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1238103B true DE1238103B (en) | 1967-04-06 |
Family
ID=7508428
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE1962S0079771 Pending DE1238103B (en) | 1962-06-05 | 1962-06-05 | Method for producing a semiconductor component |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1238103B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2863105A (en) * | 1955-11-10 | 1958-12-02 | Hoffman Electronics Corp | Rectifying device |
| DE1086350B (en) * | 1957-05-09 | 1960-08-04 | Westinghouse Electric Corp | A method of manufacturing a semiconductor device, e.g. B. a silicon rectifier |
| DE1097574B (en) * | 1957-01-31 | 1961-01-19 | Westinghouse Electric Corp | Method for manufacturing a semiconductor component |
| GB885137A (en) * | 1959-09-16 | 1961-12-20 | Philips Electrical Ind Ltd | Improvements in or relating to methods of manufacturing semi-conductive devices |
-
1962
- 1962-06-05 DE DE1962S0079771 patent/DE1238103B/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2863105A (en) * | 1955-11-10 | 1958-12-02 | Hoffman Electronics Corp | Rectifying device |
| DE1097574B (en) * | 1957-01-31 | 1961-01-19 | Westinghouse Electric Corp | Method for manufacturing a semiconductor component |
| DE1086350B (en) * | 1957-05-09 | 1960-08-04 | Westinghouse Electric Corp | A method of manufacturing a semiconductor device, e.g. B. a silicon rectifier |
| GB885137A (en) * | 1959-09-16 | 1961-12-20 | Philips Electrical Ind Ltd | Improvements in or relating to methods of manufacturing semi-conductive devices |
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