DE1223472B - Photosensitive rectifier - Google Patents

Photosensitive rectifier

Info

Publication number
DE1223472B
DE1223472B DEL28858A DEL0028858A DE1223472B DE 1223472 B DE1223472 B DE 1223472B DE L28858 A DEL28858 A DE L28858A DE L0028858 A DEL0028858 A DE L0028858A DE 1223472 B DE1223472 B DE 1223472B
Authority
DE
Germany
Prior art keywords
rectifier
light
photosensitive
opaque
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DEL28858A
Other languages
German (de)
Inventor
Wilhelm Buttler
Dr Wilhelm Muscheid
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lab fur Strahlungstechnik G M
Original Assignee
Lab fur Strahlungstechnik G M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lab fur Strahlungstechnik G M filed Critical Lab fur Strahlungstechnik G M
Priority to DEL28858A priority Critical patent/DE1223472B/en
Publication of DE1223472B publication Critical patent/DE1223472B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)

Description

Lichtempfindlicher Gleichrichter Die Erfindung betrifft einen lichtempfindlichen Gleichrichter mit einem lichtempfindlichen Halbleiterkörper, der sich auf einem undurchsichtigen Träger befindet und eine ohmsche und eine Sperrschichtelektrode auf der dem Licht zugewandten Seite trägt.Photosensitive rectifier The invention relates to a photosensitive rectifier Rectifier with a light-sensitive semiconductor body, which is on a opaque carrier and an ohmic and a barrier electrode on the side facing the light.

Es ist bekannt, einen Fotowiderstand mit einem Sperrschichtgleichrichter so zusammenzubauen, daß der Fotowiderstand und der Gleichrichter einen Halbleiterkörper gemeinsam haben. Ein solcher in Schichten aufgebauter Gleichrichter hat auf jeder seiner Flachseiten je eine Anschlußelektrode. Das den Widerstandswert des Fotowiderstandes steuernde Licht fällt immer nur von einer Seite auf die Mehrschichtenanordnung des so gestalteten Gleichrichters.It is known to use a photoresistor with a barrier rectifier assemble so that the photoresistor and the rectifier form a semiconductor body have in common. Such a rectifier built in layers has on each one its flat sides each have a connection electrode. That is the resistance value of the photo resistor The controlling light always falls on the multilayer arrangement of the so designed rectifier.

Ziel der Erfindung ist es, einen lichtempfindlichen Gleichrichter zu schaffen, der auf einfache Weise aus einem Fotowiderstand herstellbar ist, der also nicht den verhältnismäßig komplizierten Aufbau des bekannten, aus Fotowiderstand und Gleichrichter kombinierten Schaltungselementes hat.The aim of the invention is to provide a photosensitive rectifier to create that can be produced in a simple manner from a photoresistor, the So not the relatively complicated structure of the well-known photo resistor and rectifier has combined circuit element.

Erfindungsgemäß wird der eingangs angegebene lichtempfindliche Gleichrichter so gestaltet, daß die Sperrschichtelektrode mit einer lichtundurchlässigen Schicht so abgedeckt ist, daß der Lichteinfall auf die Sperrschicht vollständig verhindert wird. Wie ersichtlich, können mit sehr einfachen Mitteln einem Fotowiderstand, dessen Elektroden auf der dem Licht zugewandten Seite liegen, Gleichrichtereigenschaften gegeben werden. Als Sperrschichtelektrode wird z. B. eine mit einer Silberpaste hergestellte leitende Schicht auf einem Cadmiumsulfidkörper verwendet. Eine solche Sperrschicht hat eine Sperrspannung von etwa 100 V und einen Sperrwiderstand von 100 kOhm. Ein derartiger lichtempfindlicher Gleichrichter eignet sich insbesondere zur Verwendung in kurzschlußsicheren Flammenwächterschaltungen. Die erfindungsgemäßen Gleichrichter sind allgemein dort anwendbar, wo aus schaltungstechnischen Gründen oder Sicherheitsgründen eine Zusammenschaltung von Gleichrichtern und Fotowiderständen erwünscht ist.According to the invention, the photosensitive rectifier specified at the outset is used designed so that the barrier electrode is covered with an opaque layer is covered in such a way that the incidence of light on the barrier layer is completely prevented will. As can be seen, a photo resistor, its Electrodes are on the side facing the light, rectifier properties are given. As a barrier electrode, for. B. one with a silver paste produced conductive layer used on a cadmium sulfide body. Such Blocking layer has a blocking voltage of about 100 V and a blocking resistance of 100 kOhm. Such a photosensitive rectifier is particularly suitable for use in short-circuit-proof flame monitor circuits. The invention Rectifiers are generally applicable where for circuit reasons or for safety reasons, an interconnection of rectifiers and photoresistors is desirable.

Der neue lichtempfindliche Gleichrichter ist nachstehend in der schematisch gehaltenen Zeichnung näher erläutert. Die Zeichnung gibt einen Querschnitt durch den Halbleiterkörper mit seinem Träger wieder.The new photosensitive rectifier is shown schematically below in FIG held drawing explained in more detail. The drawing gives a cross-section the semiconductor body with its carrier again.

Ein Fotohalbleiter 2 ist auf einer Tragplatte 1 aus undurchsichtigem Isolierstoff angebracht. Der Halbleiter 2 ist mit einer nichtsperrenden Elektrode 3 und auf der Gegenseite mit einer sperrenden Elektrode 4 versehen. Die Sperrelektrode 4 und der ihr benachbarte Teil des Halbleiters 2 sind durch eine Lackschicht 5 abgedeckt, die für den lichtempfindlichen Bereich des Halbleiters 2 bzw. den Lichtbereich, mit dem der Halbleiter belichtet werden soll, lichtundurchlässig ist.A photo semiconductor 2 is on a support plate 1 made of opaque Insulating material attached. The semiconductor 2 is provided with a non-blocking electrode 3 and provided with a blocking electrode 4 on the opposite side. The barrier electrode 4 and the part of the semiconductor 2 adjacent to it are covered by a lacquer layer 5, those for the light-sensitive area of the semiconductor 2 or the light area, with which the semiconductor is to be exposed is opaque.

Claims (2)

Patentansprüche: 1. Lichtempfindlicher Gleichrichter mit einem auf einem undurchsichtigen Träger aufgebrachten lichtempfindlichen Halbleiterkörper, der eine ohmsche und eine Sperrschichtelektrode auf der dem Licht zugewandten Seite trägt, dadurch gekennzeichnet, daß die Sperrschichtelektrode (4) mit einer lichtundurchlässigen Schicht (5) so abgedeckt ist, daß der Lichteinfall auf die Sperrschicht vollständig verhindert wird. Claims: 1. Photosensitive rectifier with a light-sensitive semiconductor body applied to an opaque carrier, the one ohmic and one barrier electrode on the side facing the light carries, characterized in that the barrier layer electrode (4) with an opaque Layer (5) is covered so that the light falls on the barrier layer completely is prevented. 2. Lichtempfindlicher Gleichrichter nach Anspruch 1, dadurch gekennzeichnet, daß die abdeckende Schicht aus einem lichtundurchlässigen Lack besteht. In Betracht gezogene Druckschriften: Deutsche Patentschrift Nr. 972 869.2. Photosensitive rectifier according to claim 1, characterized in that that the covering layer consists of an opaque varnish. Into consideration Printed publications: German Patent No. 972 869.
DEL28858A 1957-10-07 1957-10-07 Photosensitive rectifier Pending DE1223472B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DEL28858A DE1223472B (en) 1957-10-07 1957-10-07 Photosensitive rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DEL28858A DE1223472B (en) 1957-10-07 1957-10-07 Photosensitive rectifier

Publications (1)

Publication Number Publication Date
DE1223472B true DE1223472B (en) 1966-08-25

Family

ID=7264675

Family Applications (1)

Application Number Title Priority Date Filing Date
DEL28858A Pending DE1223472B (en) 1957-10-07 1957-10-07 Photosensitive rectifier

Country Status (1)

Country Link
DE (1) DE1223472B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3106215A1 (en) * 1980-03-07 1982-01-21 General Dynamics Corp., St. Louis, Mo. SCHOTTKY BARRIER PHOTODETECTOR AND METHOD FOR THE PRODUCTION THEREOF

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE972869C (en) * 1951-07-17 1959-10-15 Siemens Ag Controllable rectifier arrangement

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE972869C (en) * 1951-07-17 1959-10-15 Siemens Ag Controllable rectifier arrangement

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3106215A1 (en) * 1980-03-07 1982-01-21 General Dynamics Corp., St. Louis, Mo. SCHOTTKY BARRIER PHOTODETECTOR AND METHOD FOR THE PRODUCTION THEREOF
DE3153186C2 (en) * 1980-03-07 1985-10-10 General Dynamics Corp., St. Louis, Mo. Method of making a Schottky barrier photodetector

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