DE1215814C2 - - Google Patents
Info
- Publication number
- DE1215814C2 DE1215814C2 DE1955S0043730 DES0043730A DE1215814C2 DE 1215814 C2 DE1215814 C2 DE 1215814C2 DE 1955S0043730 DE1955S0043730 DE 1955S0043730 DE S0043730 A DES0043730 A DE S0043730A DE 1215814 C2 DE1215814 C2 DE 1215814C2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
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- H10P95/00—
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- H10P95/50—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES43730A DE1215814B (de) | 1955-04-29 | 1955-04-29 | Halbleiterbauelement mit kleiner Relaxationszeit fuer schnelle Schaltvorgaenge mit einer Halbleiterlegierung aus Silizium und Germanium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES43730A DE1215814B (de) | 1955-04-29 | 1955-04-29 | Halbleiterbauelement mit kleiner Relaxationszeit fuer schnelle Schaltvorgaenge mit einer Halbleiterlegierung aus Silizium und Germanium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1215814B DE1215814B (de) | 1966-05-05 |
| DE1215814C2 true DE1215814C2 (OSRAM) | 1966-11-17 |
Family
ID=7484851
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES43730A Granted DE1215814B (de) | 1955-04-29 | 1955-04-29 | Halbleiterbauelement mit kleiner Relaxationszeit fuer schnelle Schaltvorgaenge mit einer Halbleiterlegierung aus Silizium und Germanium |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1215814B (OSRAM) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2514879A (en) * | 1945-07-13 | 1950-07-11 | Purdue Research Foundation | Alloys and rectifiers made thereof |
| DE868354C (de) * | 1951-06-20 | 1953-02-23 | Telefunken Gmbh | Verfahren zur Herstellung von Halbleitern fuer Dioden oder Verstaerker |
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1955
- 1955-04-29 DE DES43730A patent/DE1215814B/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE1215814B (de) | 1966-05-05 |