DE1214787C2 - - Google Patents

Info

Publication number
DE1214787C2
DE1214787C2 DE1961D0037185 DED0037185A DE1214787C2 DE 1214787 C2 DE1214787 C2 DE 1214787C2 DE 1961D0037185 DE1961D0037185 DE 1961D0037185 DE D0037185 A DED0037185 A DE D0037185A DE 1214787 C2 DE1214787 C2 DE 1214787C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1961D0037185
Other versions
DE1214787B (de
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DED37185A priority Critical patent/DE1214787B/de
Publication of DE1214787B publication Critical patent/DE1214787B/de
Application granted granted Critical
Publication of DE1214787C2 publication Critical patent/DE1214787C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DED37185A 1961-10-04 1961-10-04 Flaechentransistor mit teilweise fallender Charakteristik und einem sperrfreien die Kollektor-pn-UEbergangsflaeche durchstossenden Stromengekontakt Granted DE1214787B (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DED37185A DE1214787B (de) 1961-10-04 1961-10-04 Flaechentransistor mit teilweise fallender Charakteristik und einem sperrfreien die Kollektor-pn-UEbergangsflaeche durchstossenden Stromengekontakt

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DED37185A DE1214787B (de) 1961-10-04 1961-10-04 Flaechentransistor mit teilweise fallender Charakteristik und einem sperrfreien die Kollektor-pn-UEbergangsflaeche durchstossenden Stromengekontakt

Publications (2)

Publication Number Publication Date
DE1214787B DE1214787B (de) 1966-04-21
DE1214787C2 true DE1214787C2 (de) 1966-11-10

Family

ID=7043477

Family Applications (1)

Application Number Title Priority Date Filing Date
DED37185A Granted DE1214787B (de) 1961-10-04 1961-10-04 Flaechentransistor mit teilweise fallender Charakteristik und einem sperrfreien die Kollektor-pn-UEbergangsflaeche durchstossenden Stromengekontakt

Country Status (1)

Country Link
DE (1) DE1214787B (de)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1047316B (de) * 1953-08-12 1958-12-24 Gen Electric Halbleiteranordnung mit einem langgestreckten Halbleiterkoerper vom einen Leitungstyp und ohmschen Elektroden an den Enden
US2869084A (en) * 1956-07-20 1959-01-13 Bell Telephone Labor Inc Negative resistance semiconductive device
DE1054584B (de) * 1957-02-25 1959-04-09 Deutsche Bundespost Halbleiteranordnung zur wahlweisen Umschaltung eines Signals

Also Published As

Publication number Publication date
DE1214787B (de) 1966-04-21

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