DE1197987B - Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und Betriebsschaltungen - Google Patents
Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und BetriebsschaltungenInfo
- Publication number
- DE1197987B DE1197987B DEF33075A DEF0033075A DE1197987B DE 1197987 B DE1197987 B DE 1197987B DE F33075 A DEF33075 A DE F33075A DE F0033075 A DEF0033075 A DE F0033075A DE 1197987 B DE1197987 B DE 1197987B
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- rectifying
- semiconductor component
- semiconductor
- semiconductor body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000002800 charge carrier Substances 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP243260 | 1960-01-26 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1197987B true DE1197987B (de) | 1965-08-05 |
| DE1197987C2 DE1197987C2 (lt) | 1966-03-10 |
Family
ID=11529084
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEF33075A Granted DE1197987B (de) | 1960-01-26 | 1961-01-26 | Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und Betriebsschaltungen |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1197987B (lt) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE890847C (de) * | 1948-09-24 | 1953-09-24 | Western Electric Co | Halbleiter-UEbertragungsvorrichtung |
| DE943964C (de) * | 1952-10-31 | 1956-08-16 | Western Electric Co | Halbleiter-Signaluebertragungseinrichtung |
| US2790034A (en) * | 1953-03-05 | 1957-04-23 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ |
-
1961
- 1961-01-26 DE DEF33075A patent/DE1197987B/de active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE890847C (de) * | 1948-09-24 | 1953-09-24 | Western Electric Co | Halbleiter-UEbertragungsvorrichtung |
| DE943964C (de) * | 1952-10-31 | 1956-08-16 | Western Electric Co | Halbleiter-Signaluebertragungseinrichtung |
| US2790034A (en) * | 1953-03-05 | 1957-04-23 | Bell Telephone Labor Inc | Semiconductor signal translating devices |
| FR1210880A (fr) * | 1958-08-29 | 1960-03-11 | Perfectionnements aux transistors à effet de champ |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1197987C2 (lt) | 1966-03-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE3011557C2 (de) | Zweipoliger Überstromschutz | |
| DE2009102C3 (de) | Integrierte Halbleiteranordnung mit komplementären Feldeffekttransistoren | |
| DE2505573C3 (de) | Halbleiterschaltungsanordnung mit zwei Isolierschicht-Feldeffekttransistoren | |
| DE1564221A1 (de) | Halbleiterbauelement vom Feldeffekttyp,insbesondere zur Realisierung von logischen Funktionen | |
| DE1216435B (de) | Schaltbares Halbleiterbauelement mit vier Zonen | |
| DE1062821B (de) | Drifttransistor mit in der Basiszone abgestuftem spezifischem Widerstand | |
| DE1614250C3 (de) | Halbleiteranordnung mit Gruppen von sich kreuzenden Verbindungen | |
| DE2263075C3 (de) | Elektrische Spannungsversorgung für eine monolithisch integrierte Halbleiteranordnung | |
| DE1564863C2 (de) | Planartransistor mit einer Emitter-, einer Basis- und einer Kollektorzone | |
| DE1197987B (de) | Halbleiterbauelement mit Feldsteuerung fuer Schaltzwecke und Betriebsschaltungen | |
| DE2559361C2 (de) | Halbleiterbauelement mit mehreren, Feldeffekttransistoren definierenden Zonen | |
| DE1539982B2 (de) | Zweiweg-halbleiterschalter | |
| DE2742361C2 (lt) | ||
| DE2009358A1 (de) | Halbleiterbauelement mit einer integrierten Impulstorschaltung und Verfahren zur Herstellung dieses Bauelements | |
| DE2206353A1 (de) | Integrierter Transistor und Emitter-Kollektor-Diode | |
| DE2013228A1 (de) | Halbleiterelement mit mindestens einer Steuerelektrode | |
| DE2210386A1 (de) | Thyristor | |
| DE1564343B2 (de) | Halbleiterbauelement mit negativer widerstandscharakteristik | |
| DE2042313C3 (de) | Halbleiterbauelement | |
| DE1171992C2 (de) | Transistor mit Dotierung der Basiszone | |
| DE1922754C3 (de) | Halbleiterbauelement mit mindestens zwei miteinander gekoppelten bistabilen Halbleiterschaltungselementen | |
| DE1918557A1 (de) | Integrierter Schaltkreis | |
| DE2227339A1 (de) | Elektrische Schutzschaltung | |
| DE68919695T2 (de) | Integrierte schaltung mit einem vertikalen transistor. | |
| DE1614990A1 (de) | Halbleiterschaltelement mit mehreren UEbergaengen und Verfahren zu seiner Herstellung |