DE1193609B - Method for manufacturing semiconductor components - Google Patents
Method for manufacturing semiconductor componentsInfo
- Publication number
- DE1193609B DE1193609B DEN20834A DEN0020834A DE1193609B DE 1193609 B DE1193609 B DE 1193609B DE N20834 A DEN20834 A DE N20834A DE N0020834 A DEN0020834 A DE N0020834A DE 1193609 B DE1193609 B DE 1193609B
- Authority
- DE
- Germany
- Prior art keywords
- electrode material
- semiconductor body
- chamber
- semiconductor
- mold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 31
- 238000000034 method Methods 0.000 title claims description 7
- 238000004519 manufacturing process Methods 0.000 title claims description 3
- 239000007772 electrode material Substances 0.000 claims description 34
- 238000002844 melting Methods 0.000 claims description 5
- 230000008018 melting Effects 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000370 acceptor Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05556—Shape in side view
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01006—Carbon [C]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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- H01L2924/01033—Arsenic [As]
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- H01L2924/01082—Lead [Pb]
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10252—Germanium [Ge]
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Silicon Compounds (AREA)
Description
BUNDESREPUBLIK DEUTSCHLANDFEDERAL REPUBLIC OF GERMANY
DEUTSCHESGERMAN
PATENTAMTPATENT OFFICE
AUSLEGESCHRIFTEDITORIAL
Int. Cl.:Int. Cl .:
HOIlHOIl
Deutschem.: 21g-11/02 German: 21g -11/02
Nummer: 1193 609Number: 1193 609
Aktenzeichen: N 20834 VIII c/21 gFile number: N 20834 VIII c / 21 g
Anmeldetag: 17. November 1961Filing date: November 17, 1961
Auslegetag: 26. Mai 1965Opening day: May 26, 1965
Die Erfindung bezieht sich auf ein Verfahren zur Herstellung von Halbleiterbauelementen, wie Transistoren und Kristalldioden, bei dem ein Halbleiterkörper und mindestens eine Elektrodenmaterialmenge getrennt in einer Form auf eine Temperatur erwärmt werden, die höher als der Schmelzpunkt des Elektrodenmaterials, jedoch niedriger als der Schmelzpunkt des Halbleiterkörpers ist, wonach das Elektrodenmaterial auf den Körper aufgebracht und mit ihm vereinigt wird, und bei dem die Form Aufnahmeräume für den Halbleiterkörper und für das Elektrodenmaterial sowie mindestens einen Kanal aufweist, der diese Aufnahmeräume miteinander verbindet und in eine an den Aufnahmeraum für den Halbleiterkörper grenzende Kammer mündet, deren Höhe klein im Verhältnis zu mindestens einer ihrer Bodenabmessungen ist.The invention relates to a method for manufacturing semiconductor components such as transistors and crystal diodes, in which a semiconductor body and at least a quantity of electrode material separately in a mold to a temperature higher than the melting point of the Electrode material, but lower than the melting point of the semiconductor body, after which the electrode material is applied to the body and united with it, and in which the form is receiving spaces for the semiconductor body and for the electrode material as well as at least one channel, which connects these recording rooms with each other and in one to the recording room for the The chamber bordering the semiconductor body opens, the height of which is small in relation to at least one of its Floor dimensions is.
Unter dem Boden der Kammer ist hier die Fläche zu verstehen, durch die die Kammer und der Aufnahmeraum des Halbleiterkörpers miteinander zusammenhängen und die somit auch die Fläche ist, auf der der Halbleiterkörper vom Elektrodenmaterial bedeckt wird.The bottom of the chamber is to be understood here as the area through which the chamber and the receiving space of the semiconductor body are related to each other and which is therefore also the area on which the semiconductor body is covered by the electrode material.
Bei einem derartigen bekannten Verfahren bildet der Aufnahmeraum für das Elektrodenmaterial einen Teil des Kanals, und beim Schmelzen des Elektrodenmaterials fällt das Elektrodenmaterial zugleich auf den Halbleiterkörper. Da es äußerst schwierig ist, das Elektrodenmaterial sehr rasch zu schmelzen, besteht die Gefahr, daß beim Erhitzen zuerst einige Tropfen auf den Halbleiterkörper fallen und dann die ganze Menge des Elektrodenmaterials, worin noch feste Teile anwesend sein können. Dadurch ist ein homogenes Legieren schwierig zu erreichen.In such a known method, the receiving space for the electrode material forms one Part of the channel, and when the electrode material melts, the electrode material is noticeable at the same time the semiconductor body. Since it is extremely difficult to melt the electrode material very quickly, there is the risk that, when heated, a few drops will fall onto the semiconductor body and then the whole amount of the electrode material, in which solid parts can still be present. This is a homogeneous alloying difficult to achieve.
Überdies hat das geschmolzene Elektrodenmaterial die Neigung, sich zu einer Halbkugel zusammenzuziehen, wodurch sich Schwierigkeiten bei der Herstellung größerer, verhältnismäßig dünnerer Elektroden oder Elektroden mit einer nicht kreisförmigen, z.B. rechteckigen, Berührungsfläche am Halbleiterkörper ergeben können.In addition, the molten electrode material has a tendency to contract into a hemisphere, thereby creating difficulties in making larger, relatively thinner electrodes or electrodes with a non-circular, e.g. rectangular, contact area on the semiconductor body can result.
Diese Schwierigkeiten werden gemäß der Erfindung dadurch umgangen, daß die Elektrodenmaterialmenge größer als der Rauminhalt der Kammer ist und im geschmolzenen Zustand durch Kippen der Form auf den Halbleiterkörper geworfen wird.These difficulties are avoided according to the invention in that the amount of electrode material is larger than the volume of the chamber and is thrown onto the semiconductor body in the molten state by tilting the mold will.
Infolge der Beschleunigung, die das geschmolzene Elektrodenmaterial beim Kippen erhält, wird das
Elektrodenmaterial sich schnell über einen durch die Form begrenzten Bereich des Körpers ausbreiten und
in diesem Bereich bis zu einer gleichmäßigen Tiefe Verfahren zum Herstellen von
HalbleiterbauelementenAs a result of the acceleration that the molten electrode material receives when it is tilted, the electrode material will spread rapidly over an area of the body limited by the shape and in this area to a uniform depth
Semiconductor components
Anmelder:Applicant:
N. V. Philips' Gloeilampenfabrieken,N. V. Philips' Gloeilampenfabrieken,
Eindhoven (Niederlande)Eindhoven (Netherlands)
Vertreter:Representative:
Dr. rer. nat. P. Roßbach, Patentanwalt,Dr. rer. nat. P. Roßbach, patent attorney,
Hamburg 1, Mönckebergstr. 7Hamburg 1, Mönckebergstr. 7th
Als Erfinder benannt:
Willem Gerard Einthoven,
Eindhoven (Niederlande)Named as inventor:
Willem Gerard Einthoven,
Eindhoven (Netherlands)
Beanspruchte Priorität:Claimed priority:
Niederlande vom 21. November 1960 (258 204)Netherlands of November 21, 1960 (258 204)
mit dem Halbleiterkörper verschmelzen. Weiter wird nicht nur die Kammer mit Elektrodenmaterial gefüllt, sondern auch in dem an die Kammer grenzenden Teil des Kanals wird eine Elektrodenmaterialmenge gesammelt, deren Gewicht und kinetische Energie dazu beitragen, daß sich die Kammer bis in die Ecken völlig mit dem Elektrodenmaterial füllt, sogar wenn ihre Höhe sehr gering ist.fuse with the semiconductor body. Furthermore, not only is the chamber filled with electrode material, but also in the part of the channel adjoining the chamber there is an amount of electrode material collected, whose weight and kinetic energy contribute to the fact that the chamber up into completely fills the corners with the electrode material, even if their height is very small.
Es sei bemerkt, daß nach einem nicht zum Stand der Technik gehörenden älteren Vorschlag das Legierungsmaterial durch Kippen der Form aus einer Mulde mit dem Halbleiterkörper in Berührung gebracht werden kann. Nach der Erfindung ist die Elektrodenmaterialmenge größer als der Rauminhalt der Kammer, wodurch auch der angrenzende Teil des Kanals mit Elektrodenmaterial gefüllt wird und sich die obenerwähnten Vorteile ergeben.It should be noted that according to an earlier proposal, not belonging to the prior art, the Alloy material brought into contact with the semiconductor body by tilting the mold from a trough can be. According to the invention, the amount of electrode material is greater than the volume the chamber, whereby the adjacent part of the channel is also filled with electrode material and the advantages mentioned above result.
Die bei dem Verfahren verwendete Form kann mehrfach sein, d. h., sie kann zum Anbringen mehrerer Elektroden auf einem Körper oder auf mehreren Körpern in der Weise eingerichtet sein, daß ein oder mehrere Aufnahmeräume für einen Halbleiterkörper eine Kammer durch mehr als einen Kanal mit durch einen oder mehrere Kanäle mit einem oder mehreren Aufnahmeräumen für Elektrodenmaterial verbunden sind.The shape used in the method can be multiple; i.e., it can be used to attach several Electrodes on a body or on several bodies to be set up in such a way that one or several receiving spaces for a semiconductor body through a chamber through more than one channel one or more channels connected to one or more receiving spaces for electrode material are.
Die Erfindung wird nachstehend an Hand eines durch eine Zeichnung verdeutlichten Ausführungsbeispieles näher erläutert. The invention is explained in more detail below using an exemplary embodiment illustrated by a drawing.
509 577/311509 577/311
Die F i g. 1 und 2 zeigen schaubildlich die Ober- und Unterseite eines Halbleiterbauelementes und die Grenzen der auf denen Halbleiterkörper anzubringenden Elektroden;The F i g. 1 and 2 show diagrammatically the top and bottom of a semiconductor component and the Limits of the electrodes to be applied to the semiconductor body;
Fig. 3, 4 und 5 zeigen Schnitte durch eine Form in drei Stufen des Verfahrens;Figures 3, 4 and 5 show sections through a mold in three stages of the process;
F i g. 6 und 7 stellen schaubildlich die Ober- und die Unterseite des fertigen Halbleiterbauelementes dar.F i g. 6 and 7 show diagrammatically the top and bottom of the finished semiconductor component.
Beim nachstehenden Beispiel ist von der Voraussetzung ausgegangen, daß ein Halbleiterkörper 1 auf einer Seite mit einer verhältnismäßig ausgedehnten Elektrode 2 und einer kleineren Elektrode 3, wie dies in der F i g. 1 dargestellt ist, und auf der anderen Seite mit einer verhältnismäßig großen Elektrode 4 (Fig. 2) versehen werden muß. Diese Elektroden sind nur im Umriß angegeben. Die Zusammensetzung des Halbleiterkörpers und der Elektroden ist für das Verfahren nicht von wesentlicher Bedeutung; auch ist es in diesem Zusammenhang belanglos, ob im Körper Teile von unterschiedlichem Leitungstyp und/oder unterschiedlicher Leitfähigkeit vorhanden sind und ob die Elektroden ohmsche oder gleichrichtende Kontakte mit dem Körper bilden. Der Halbleiterkörper kann z. B. aus Germanium oder Silizium bestehen, das Elektrodenmaterial, ζ. Β. aus Indium, Blei, Zinn, Wismut, gegebenenfalls mit einem Zusatz von Donatoren und/oder Akzeptoren wie Antimon, Arsen, Phosphor, Aluminium, Gallium, Bor und gegebenenfalls auch aus Halbleitermaterial.The following example is based on the assumption that a semiconductor body 1 on one side with a relatively extended electrode 2 and a smaller electrode 3, such as this in FIG. 1, and on the other hand with a relatively large electrode 4 (Fig. 2) must be provided. These electrodes are shown only in outline. The composition the semiconductor body and the electrodes are not essential for the method; even In this context it is irrelevant whether parts of the body have different conductivity types and / or different conductivity are present and whether the electrodes are ohmic or rectifying Make contact with the body. The semiconductor body can, for. B. from germanium or Made of silicon, the electrode material, ζ. Β. of indium, lead, tin, bismuth, optionally with an addition of donors and / or acceptors such as antimony, arsenic, phosphorus, aluminum, gallium, Boron and possibly also from semiconductor material.
Zum Aufschmelzen dieser Elektroden findet z. B. die in der F i g. 3 dargestellte Form Verwendung, die aus einer Unterhälfte 10 und Oberhälfte 11 besteht. In der Unterhälfte ist ein Aufnahmeraum 12 für den Halbleiterkörper 1 ausgespart. Die beiden Hälften werden mittels eines Paßrandes 13 in bezug aufeinander fixiert. In der unteren Hälfte 10 ist eine Kammer 15 ausgespart, die an den Aufnahmeraum 12 für den Halbleiterkörper grenzt. Diese Kammer 15 ist durch Kanäle 16 mit Aufnahmeräumen 17 für zwei Elektrodenmaterialmengen 18 verbunden. In der oberen Hälfte 11 der Form ist eine zweite Kammer 20 ausgespart, die gleichfalls an den Aufnahmeraum 12 grenzt und durch einen Kanal 21 mit einem Aufnahmeraum 22 für eine Elektrodenmaterialmenge 23 in Verbindung steht. In der Oberhälfteil der Form ist ein zweiter Kanal 25 vorgesehen, der mit einem Aufnahmeraum 26 für eine Elektrodenmaterialmenge 27 in Verbindung steht. Dieser Kanal 25 mündet unmittelbar, d. h. ohne Kammer, in den Aufnahmeraum 12 für den Halbleiterkörper 1.To melt these electrodes there is, for. B. in the F i g. 3 form shown use that consists of a lower half 10 and an upper half 11. In the lower half is a receiving space 12 for the Semiconductor body 1 cut out. The two halves are by means of a mating edge 13 with respect to each other fixed. In the lower half 10, a chamber 15 is recessed, which is attached to the receiving space 12 for the semiconductor body is adjacent. This chamber 15 is through channels 16 with receiving spaces 17 for two sets of electrode material 18 connected. In the upper half 11 of the mold is a second chamber 20 recessed, which is also adjacent to the receiving space 12 and through a channel 21 with a Receiving space 22 for a quantity of electrode material 23 is in communication. In the upper half of the Form a second channel 25 is provided, which with a receiving space 26 for a quantity of electrode material 27 communicates. This channel 25 opens directly, i. H. without chamber, in the Receiving space 12 for the semiconductor body 1.
Nachdem die Form in der in der F i g. 3 dargestellten Lage, z. B. in Wasserstoff, bis über den Schmelzpunkt des Elektrodenmaterials erhitzt ist, wird die Form in die in der F i g. 4 dargestellte Lage gebracht, wodurch die Elektrodenmaterialmengen 23 und 27 auf den Körper fallen. Das Elektrodenmaterial 27 bildet dabei auf an sich bekannte Weise die Elektrode 3.After the shape is in the form shown in FIG. 3 position shown, for. B. in hydrogen, up to above the melting point of the electrode material is heated, the shape is made into the shape shown in FIG. 4 position shown, whereby the electrode material amounts 23 and 27 fall on the body. The electrode material 27 forms the electrode 3 in a manner known per se.
Die Elektrodenmaterialmenge 23 ist so groß, daß sie nicht nur die Kammer 20, sondern auch den unteren Teil des Kanals 21 füllt, wodurch die rascheThe amount of electrode material 23 is so large that they not only the chamber 20, but also the lower part of the channel 21 fills, whereby the rapid
ίο und völlige Füllung der Kammer gefördert wird. Diese Menge bildet die Elektrode 2.ίο and complete filling of the chamber is encouraged. This amount forms the electrode 2.
Dann wird die Form abermals, jetzt jedoch um 180°, gedreht, bis sie die in der Fig. 5 dargestellte Lage einnimmt, wodurch die beiden Elektrodenmaterialmengen 18 in die Kammer 15 fallen und die Elektrode 4 bilden.Then the shape is rotated again, but now by 180 °, until it is the one shown in FIG Assumes position, whereby the two amounts of electrode material 18 fall into the chamber 15 and the Form electrode 4.
Die so gebildeten Elektroden 2 und 4 haben, wie in den F i g. 6 und 7 deutlicher ersichtlich ist, kleine Erhebungen 20, die zeigen, daß die Kammern 15 bzw. 20 völlig gefüllt wurden. Diese Erhebungen können zum Anlöten von Zuführungsdrähten 21 Verwendung finden.The electrodes 2 and 4 thus formed have, as shown in FIGS. 6 and 7 can be seen more clearly, small Elevations 20, which show that the chambers 15 and 20 have been completely filled. These surveys can be used for soldering lead wires 21.
Claims (1)
Deutsche Auslegeschrift Nr. 1 054 583.Considered publications:
German interpretative document No. 1 054 583.
Deutsches Patent Nr. 1110763.Legacy Patents Considered:
German Patent No. 1110763.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL258204 | 1960-11-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE1193609B true DE1193609B (en) | 1965-05-26 |
Family
ID=19752712
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DEN20834A Pending DE1193609B (en) | 1960-11-21 | 1961-11-17 | Method for manufacturing semiconductor components |
Country Status (5)
Country | Link |
---|---|
CH (1) | CH411139A (en) |
DE (1) | DE1193609B (en) |
ES (1) | ES272141A1 (en) |
GB (1) | GB972387A (en) |
NL (1) | NL258204A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2238569A1 (en) * | 1971-08-07 | 1973-02-22 | Matsushita Electronics Corp | METHOD OF SOLDERING A SEMICONDUCTOR BOARD |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1054583B (en) * | 1957-03-05 | 1959-04-09 | Bbc Brown Boveri & Cie | Process for the production of pn junctions on semiconductor bodies |
-
0
- NL NL258204D patent/NL258204A/xx unknown
-
1961
- 1961-11-17 GB GB41244/61A patent/GB972387A/en not_active Expired
- 1961-11-17 CH CH1339861A patent/CH411139A/en unknown
- 1961-11-17 DE DEN20834A patent/DE1193609B/en active Pending
-
1962
- 1962-11-18 ES ES272141A patent/ES272141A1/en not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1054583B (en) * | 1957-03-05 | 1959-04-09 | Bbc Brown Boveri & Cie | Process for the production of pn junctions on semiconductor bodies |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2238569A1 (en) * | 1971-08-07 | 1973-02-22 | Matsushita Electronics Corp | METHOD OF SOLDERING A SEMICONDUCTOR BOARD |
Also Published As
Publication number | Publication date |
---|---|
CH411139A (en) | 1966-04-15 |
GB972387A (en) | 1964-10-14 |
ES272141A1 (en) | 1962-06-16 |
NL258204A (en) | 1900-01-01 |
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