DE1156508C2 - - Google Patents

Info

Publication number
DE1156508C2
DE1156508C2 DE1959S0065225 DES0065225A DE1156508C2 DE 1156508 C2 DE1156508 C2 DE 1156508C2 DE 1959S0065225 DE1959S0065225 DE 1959S0065225 DE S0065225 A DES0065225 A DE S0065225A DE 1156508 C2 DE1156508 C2 DE 1156508C2
Authority
DE
Germany
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE1959S0065225
Other languages
German (de)
Other versions
DE1156508B (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to DES65225A priority Critical patent/DE1156508B/en
Publication of DE1156508B publication Critical patent/DE1156508B/en
Application granted granted Critical
Publication of DE1156508C2 publication Critical patent/DE1156508C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thyristors (AREA)
DES65225A 1959-09-30 1959-09-30 Controllable and switching four-layer semiconductor component Granted DE1156508B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES65225A DE1156508B (en) 1959-09-30 1959-09-30 Controllable and switching four-layer semiconductor component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES65225A DE1156508B (en) 1959-09-30 1959-09-30 Controllable and switching four-layer semiconductor component

Publications (2)

Publication Number Publication Date
DE1156508B DE1156508B (en) 1963-10-31
DE1156508C2 true DE1156508C2 (en) 1964-05-06

Family

ID=7497867

Family Applications (1)

Application Number Title Priority Date Filing Date
DES65225A Granted DE1156508B (en) 1959-09-30 1959-09-30 Controllable and switching four-layer semiconductor component

Country Status (1)

Country Link
DE (1) DE1156508B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1095469A (en) * 1964-03-21
DE1276185B (en) * 1965-05-03 1968-08-29 Siemens Ag Arrangement for controlling a thyristor which can be switched on and off via a single control electrode
SE338363B (en) * 1967-03-16 1971-09-06 Asea Ab

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2756285A (en) * 1951-08-24 1956-07-24 Bell Telephone Labor Inc Semiconductor signal translating devices
DE954624C (en) * 1952-06-19 1956-12-20 Western Electric Co High frequency semiconductor amplifier
BE526156A (en) * 1953-02-02
DE966276C (en) * 1953-03-01 1957-07-18 Siemens Ag Semiconductor arrangement with at least two control electrodes or groups of control electrodes for electronic scanning or switching arrangements
BE541575A (en) * 1954-09-27
GB807582A (en) * 1954-12-27 1959-01-21 Clevite Corp High power junction transistor
NL211758A (en) * 1955-10-29

Also Published As

Publication number Publication date
DE1156508B (en) 1963-10-31

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