DE1154874B - Transistor for high frequency circuits - Google Patents

Transistor for high frequency circuits

Info

Publication number
DE1154874B
DE1154874B DEM45121A DEM0045121A DE1154874B DE 1154874 B DE1154874 B DE 1154874B DE M45121 A DEM45121 A DE M45121A DE M0045121 A DEM0045121 A DE M0045121A DE 1154874 B DE1154874 B DE 1154874B
Authority
DE
Germany
Prior art keywords
transistor
base
frequency circuits
high frequency
socket
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DEM45121A
Other languages
German (de)
Other versions
DE1154874C2 (en
Inventor
Heinrich Menzel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to DE1960M0045121 priority Critical patent/DE1154874C2/en
Publication of DE1154874B publication Critical patent/DE1154874B/en
Application granted granted Critical
Publication of DE1154874C2 publication Critical patent/DE1154874C2/en
Expired legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/055Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads having a passage through the base
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Description

Transistor für Hochfrequenzschaltungen Die in elektrischen Hochfrequenzschaltungen verwendeten Transistoren werden in der Regel fest eingebaut, wobei ihre Anschlußdrähte mit den Schaltungsdrähten verlötet sind. In manchen Fällen, z. B. bei Versuchsschaltungen, ist ein Auswechseln des Transistors notwendig, was ein neues Verlöten der Anschlußdrähte erfordert. Dieses jedesmalige Verlöten ist zeitraubend und gefährdet den Transistor, der als Halbleiter temperaturempfindlich ist. Auch können dabei die Anschlußdrähte leicht abbrechen.Transistor for high frequency circuits Die in electrical high frequency circuits Transistors used are usually permanently installed, with their connecting wires are soldered to the circuit wires. In some cases, e.g. B. for test circuits, an exchange of the transistor is necessary, which requires a new soldering of the connecting wires requires. This repeated soldering is time consuming and endangers the transistor, which, as a semiconductor, is temperature-sensitive. The connecting wires break off easily.

Man hat bereits den Transistor auf einem zylindrischen Isoliersockel angeordnet, der mit mehreren Kontaktstiften bestückt ist, an deren eines Ende die Anschlußdrähte für den Transistor befestigt sind und deren anderes Ende in eine Fassung der Schaltung einsetzbar sind. Der Transistor ist mit einem elektrisch leitenden Stab verlötet, der die Basiselektrode des Transistors bildet und mit einem als Stromzuführung dienenden Steckerstift leitend verbunden ist. Dieser den Transistor tragende Stab ist unter Druck in den Isoliersockel eingeführt und infolge seines Preßsitzes nicht auswechselbar.You already have the transistor on a cylindrical insulating base arranged, which is equipped with several contact pins, at one end of which the Connecting wires for the transistor are attached and the other end in a Version of the circuit can be used. The transistor is electrically conductive Soldered rod that forms the base electrode of the transistor and with one as a power supply serving pin is conductively connected. This rod carrying the transistor is inserted under pressure into the insulating base and not due to its interference fit interchangeable.

Es ist ferner bekannt, Transistoren von Rundfunkempfängem gesockelt und steckbar auszubilden. Der Erfindung liegt die Aufgabe zugrunde, einen Transistor für Hochfrequenzschaltungen mit einem ihn tragenden zylindrischen lsoliersock-el, der mit mehreren Kontaktstiften bestückt ist, an deren einem Ende die Anschlußdrähte für den Transistor befestigt sind, und deren anderes Ende in eine Fassung einsteckbar ist, zu verbessern.It is also known to have socketed transistors in radio receivers and designed to be pluggable. The invention is based on the object of a transistor for high-frequency circuits with a cylindrical insulating base supporting it, which is equipped with several contact pins, at one end of which the connecting wires are attached for the transistor, and the other end can be inserted into a socket is to improve.

Diese Aufgabe wird gemäß der Erfindung dadurch gelöst, daß der Transistor in eine außermittige, am Boden geschlossene Ausnehmung des Isoliersockels eingesetzt ist.This object is achieved according to the invention in that the transistor inserted into an eccentric recess of the insulating base that is closed at the bottom is.

Die durch die Erfindung gelehrte Anordnung des Transistors in einer am Boden geschlossenen Ausnehmuna des Sockels ermöglicht ein leichtes Einsetzen und Auswechseln, ohne daß dazu eine besondere Preßvorrichtung notwendig ist. Die außermittige Lage der am Boden geschlossenen, den Transistor haltenden Ausnehmung des Sockels gibt darüber hinaus auch eine raumsparende Bauweise, denn es können die Steckerstifte auf dem gleichen Kreisbogen wie die Ausnehmung am zylindrischen Isoliersockel angebracht sein.The arrangement of the transistor taught by the invention in a The recess in the base, which is closed at the bottom, enables easy insertion and replacement without the need for a special pressing device. the eccentric position of the recess, which is closed at the bottom and holding the transistor of the base is also a space-saving design, because it can the connector pins on the same arc as the recess on the cylindrical Insulating base be attached.

Ein Ausführungsbeispiel des Erfindungsgegenstandes ist in der Zeichnung veranschaulicht. In dieser zeigt Fig. 1 die Ansicht und Fig. 2 die Draufsicht des mit Kontaktstiften verschenen Sockels, Fig. 3 die Ansicht und Fig. 4 die Draufsicht des Sockels mit eingebautem Transistor, Fig. 5 den Schnitt und Fig. 6 die Ansicht einer Abschlußkappe.An exemplary embodiment of the subject matter of the invention is illustrated in the drawing. 1 shows the view and FIG. 2 shows the top view of the socket with contact pins, FIG. 3 shows the view and FIG. 4 shows the top view of the socket with built-in transistor, FIG. 5 shows the section and FIG. 6 shows the view of an end cap .

In einem aus Isolierstoff bestehenden zylindrischen Sockel 11 sind Kontaktstifte 12 befestigt, deren oben über den Sockel 11 ragendes Ende mit einer Längsbohrung13 versehen ist, während das untere Ende14 in eine nicht dargestellte Fassung der Hochfrequenzschaltung einsetzbar ist.In a cylindrical base 11 made of insulating material, contact pins 12 are fastened, the end of which protruding above the base 11 is provided with a longitudinal bore 13, while the lower end 14 can be inserted into a socket of the high-frequency circuit (not shown).

An der Oberseite des Sockels 11 ist außermittig eine zylindrische Ausnehmung 15 angebracht, die am Boden geschlossen ist. In diese Ausnehmung ist gemäß Fig. 3 und 4 ein Transistor 16 eingesetzt, dessen Anschlußdrähte 17 in die Bohrungen 13 der Kontaktstifte 12 eingeführt und mit diesen durch eine Lötung oder Quetschung 18 fest verbunden sind. Auf den Sockel 11 ist eine z. B. aus Leichtmetall bestehende Kappe 19 gesteckt, die den Transistor mechanisch schützt und auch elektrisch abschirmt.On the top of the base 11 , a cylindrical recess 15 is attached off-center, which is closed at the bottom. In this recess Fig. 3 and 4, a transistor is used according to 16, the lead wires are introduced 17 into the bores 13 of the contact pins 12 and firmly connected thereto by soldering or pinching 18th On the base 11 is a z. B. made of light metal cap 19 , which protects the transistor mechanically and also shields it electrically.

Der den Transistor 16 tragende Sockel 11 ist in gleicher Weise wie die Elektronenröhren mit seinen Kontaktstiften 14 in die Fassung einer elektrischen Schaltung einsetzbar und kann auch leicht wieder aus dieser Fassung herausgezogen werden, ohne daß irgendwelche Lötarbeiten od. dgl. notwendig sind.The base 11 carrying the transistor 16 can be inserted into the socket of an electrical circuit in the same way as the electron tubes with its contact pins 14 and can easily be pulled out of this socket again without any soldering work or the like being necessary.

Claims (1)

PATENTANSPRUCH: Transistor für Hochfrequenzschaltungen mit einem ihn tragenden zylindrischen Isoliersokkel, der mit mehreren Kontaktstiften bestückt ist, an deren einem Ende die Anschlußdrähte für den Transistor befestigt sind, und deren anderes Ende in eine Fassung einsteckbar ist, dadurch gekennzeichnet, daß der Transistor (16) in eine außermittige, am Boden geschlossene Ausnehmung (15) des Sockels eingesetzt ist. In Betracht gezogene Druckschriften: Deutsche Auslegeschrift Nr. 1009 726; »Funkschau«, Bd. 31 (1959), H. 15, S. 713. Claim: transistor for high-frequency circuits with a cylindrical insulating base carrying it, which is equipped with several contact pins, at one end of which the connecting wires for the transistor are attached, and the other end of which can be inserted into a socket, characterized in that the transistor (16) is inserted into an eccentric recess (15) in the base, which is closed at the bottom. Documents considered: German Auslegeschrift No. 1009 726; "Funkschau", Vol. 31 (1959), H. 15, p. 713.
DE1960M0045121 1960-04-26 1960-04-26 Transistor for high frequency circuits Expired DE1154874C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE1960M0045121 DE1154874C2 (en) 1960-04-26 1960-04-26 Transistor for high frequency circuits

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1960M0045121 DE1154874C2 (en) 1960-04-26 1960-04-26 Transistor for high frequency circuits

Publications (2)

Publication Number Publication Date
DE1154874B true DE1154874B (en) 1963-09-26
DE1154874C2 DE1154874C2 (en) 1964-04-09

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE1960M0045121 Expired DE1154874C2 (en) 1960-04-26 1960-04-26 Transistor for high frequency circuits

Country Status (1)

Country Link
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3324357A (en) * 1964-01-29 1967-06-06 Int Standard Electric Corp Multi-terminal semiconductor device having active element directly mounted on terminal leads

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1009726B (en) * 1952-11-15 1957-06-06 Rca Corp Transistor with connector pins for each electrode and the corresponding socket with conductive socket shells

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1009726B (en) * 1952-11-15 1957-06-06 Rca Corp Transistor with connector pins for each electrode and the corresponding socket with conductive socket shells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3324357A (en) * 1964-01-29 1967-06-06 Int Standard Electric Corp Multi-terminal semiconductor device having active element directly mounted on terminal leads

Also Published As

Publication number Publication date
DE1154874C2 (en) 1964-04-09

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