DE1128047B - Process for producing contacts free of a barrier layer on a crystal made of a semiconducting A B compound by vapor deposition of aluminum - Google Patents
Process for producing contacts free of a barrier layer on a crystal made of a semiconducting A B compound by vapor deposition of aluminumInfo
- Publication number
- DE1128047B DE1128047B DED32006A DED0032006A DE1128047B DE 1128047 B DE1128047 B DE 1128047B DE D32006 A DED32006 A DE D32006A DE D0032006 A DED0032006 A DE D0032006A DE 1128047 B DE1128047 B DE 1128047B
- Authority
- DE
- Germany
- Prior art keywords
- aluminum
- vapor deposition
- crystal
- vol
- barrier layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims description 19
- 229910052782 aluminium Inorganic materials 0.000 title claims description 12
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 12
- 238000000034 method Methods 0.000 title claims description 11
- 238000007740 vapor deposition Methods 0.000 title claims description 9
- 230000004888 barrier function Effects 0.000 title claims description 7
- 150000001875 compounds Chemical class 0.000 title claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
- H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
- H01L21/479—Application of electric currents or fields, e.g. for electroforming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/81—Structural details of the junction
- H10N10/817—Structural details of the junction the junction being non-separable, e.g. being cemented, sintered or soldered
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Electromagnetism (AREA)
- Physical Vapour Deposition (AREA)
Description
Verfahren zum Herstellen von sperrschichtfreien Kontakten auf einem Kristall aus einer halbleitenden Aii BvI-Verbindung durch Aufdampfen von Aluminium Die Erfindung betrifft ein Verfahren zum Herstellen von sperrschichtfreien Kontakten auf einem Kristall aus einer halbleitenden Verbindung zwischen einem Element der II. Nebengruppe und einem Element der VI. Hauptgruppe des Periodischen Systems der Elemente durch Aufdampfen von Aluminium.Method for making contacts without a barrier layer on a Crystal from a semiconducting Aii BvI compound by vapor deposition of aluminum The invention relates to a method for producing contacts without a barrier layer on a crystal of a semiconducting compound between an element of the II. Subgroup and an element of the VI. Main group of the periodic table of Elements by vapor deposition of aluminum.
Die nach den bisher bekannten Verfahren hergestellten Kontakte auf Kristallen aus diesen Verbindungen, die im wesentlichen wegen ihrer Photoleitung eine technische Bedeutung haben und deshalb z. B. als Photowiderstände und Photozellen Verwendung finden, sind nur zu einem sehr geringen Prozentsatz sperrschichtfrei. Deshalb muß ein großer Teil der kontaktierten Kristalle infolge der auftretenden Gleichrichterwirkung bei der Herstellung als Ausschuß verworfen werden. Außerdem haben solche Kristalle eine zu geringe Empfindlichkeit, eine unzureichende Stabilität und ein unverhältnismäßig großes Stromrauschen.The contacts made by the previously known method Crystals from these compounds, mainly because of their photoconductivity have a technical meaning and therefore z. B. as photoresistors and photocells Only a very small percentage of them are free of barrier layers. Therefore, a large part of the contacted crystals must as a result of the occurring Rectifier effect can be discarded as scrap during manufacture. aside from that If the sensitivity of such crystals is too low, the stability is inadequate and a disproportionately large current noise.
Bei den bekannten Verfahren wird als Kontaktierungsmaterial beispielsweise Gold, Silber, Indium oder Gallium usw. benutzt. Diese Metalle sind entweder relativ teuer, und außerdem diffundieren einige von ihnen bereits wenig oberhalb der Zimmertemperatur in das Kristallinnere hinein. Dadurch wird die Belastbarkeit der Kristalle durch Licht- oder Stromerwärmung begrenzt. So darf z. B. für CDS-Kristalle in diesem Falle eine maximale Betriebstemperatur von 50° C nicht überschritten werden.In the known methods, the contacting material used is, for example Gold, silver, indium or gallium etc. are used. These metals are either relative expensive, and moreover some of them already diffuse a little above room temperature into the crystal interior. This increases the resilience of the crystals Light or electricity heating is limited. So z. B. for CDS crystals in this case a maximum operating temperature of 50 ° C must not be exceeded.
Zur Beseitigung unerwünschter Gleichrichtereffekte und von Abweichungen vom Ohmschen Gesetz ist bereits auch ein Verfahren bekannt, bei welchem die Kristalle vor dem Aufdampfen, z. B. mit Aluminium, oder anderweitigem Aufbringen der elektrischen Kontakte oder während des Aufbringens mit Elektronen, Ionen, Atomen oder Molekülen beschossen werden. Bei dem Verfahren nach der Erfindung wird dieses Ziel auf wesentlich einfachere Weise erreicht, und zwar dadurch, daß der Kristall auf mindestens 150° C erwärmt und dann das Aluminium im Vakuum aufgedampft wird.To eliminate unwanted rectifier effects and deviations A method is already known from Ohm's law in which the crystals before vapor deposition, e.g. B. with aluminum, or otherwise applying the electrical Contacts or during application with electrons, ions, atoms or molecules to be shot at. In the method according to the invention this aim becomes essential Easier way achieved, namely that the crystal to at least 150 ° C and then the aluminum is evaporated in vacuo.
Vorteilhafterweise kann der Kristall nach dem Aufdampfen des Aluminiums bei einer Temperatur zwischen 200 und 300° C getempert werden.The crystal can advantageously after the vapor deposition of the aluminum be annealed at a temperature between 200 and 300 ° C.
An einem Ausführungsbeispiel soll das erfindungsgemäße Verfahren näher erläutert werden.The method according to the invention is to be described in more detail using an exemplary embodiment explained.
Es ist besonders vorteilhaft, wenn für das Aufdampfen des Aluminiums eine Kristalltemperatur oberhalb 150° C, beispielsweise etwa 250° C, benutzt wird. Zweckmäßig wird ein Aluminium hohen Reinheitsgrades verwendet, was jedoch nicht Bedingung ist. Schädlich ist vor allen Dingen Bor als Beimengung des Aluminiums.It is particularly advantageous if for the vapor deposition of the aluminum a crystal temperature above 150 ° C, for example about 250 ° C, is used. An aluminum with a high degree of purity is expediently used, but this is not Condition is. Above all, boron as an admixture to aluminum is harmful.
Die nicht für die Kontaktierung vorgesehenen Teile der Oberfläche des Kristalls werden vor dem Aufdampfen mittels einer wärmebeständigen Schablone abgedeckt.The parts of the surface not intended for contacting of the crystal are made using a heat-resistant stencil before vapor deposition covered.
Im Anschluß an das Aufbringen der Kontakte können die Kristalle zweckmäßig noch eine Zeitlang getempert werden, um ein ausreichendes Hineindiffundieren des aufgedampften Kontaktmaterials in oberflächennahe Schichten zu ermöglichen. Das Tempern erfolgt im angegebenen Beispiel bei einer Ternperatur zwischen 200 und 300° C, wobei die Zeitdauer zwischen einigen Sekunden und Minuten variiert werden kann.Following the application of the contacts, the crystals can expediently be tempered for a while to allow sufficient diffusion of the to enable vapor-deposited contact material in layers close to the surface. That In the example given, tempering takes place at a temperature between 200 and 300 ° C, whereby the duration can be varied between a few seconds and minutes.
Die nach diesem Verfahren erzeugten Kontakte besitzen eine hohe Temperaturbeständigkeit bis mindestens 150° C. Der Kontakt des Kristalls selbst ist unlöslich, was für die Verwendung als Photobauelement besonders vorteilhaft ist. Störende Randschichten treten nicht mehr in Erscheinung, d. h., die Kontakte sind sperrschichtfrei. Die Ausbeute nach diesem Verfahren hergestellter, technisch verwendbarer Photobauelemente mit sperrschichtfreien Kontakten ist praktisch 1001%.The contacts produced by this process have a high temperature resistance to at least 150 ° C. The contact of the crystal itself is insoluble, which for the Use as a photo component is particularly advantageous. Disturbing edge layers no longer appear, d. i.e. the contacts are free of a barrier layer. the Yield of technically usable photo components produced by this process with contacts without a barrier layer is practically 1001%.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED32006A DE1128047B (en) | 1959-11-30 | 1959-11-30 | Process for producing contacts free of a barrier layer on a crystal made of a semiconducting A B compound by vapor deposition of aluminum |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DED32006A DE1128047B (en) | 1959-11-30 | 1959-11-30 | Process for producing contacts free of a barrier layer on a crystal made of a semiconducting A B compound by vapor deposition of aluminum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1128047B true DE1128047B (en) | 1962-04-19 |
Family
ID=7041139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DED32006A Pending DE1128047B (en) | 1959-11-30 | 1959-11-30 | Process for producing contacts free of a barrier layer on a crystal made of a semiconducting A B compound by vapor deposition of aluminum |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1128047B (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE968125C (en) * | 1951-09-24 | 1958-01-16 | Licentia Gmbh | Process for producing a barrier-free contact with germanium |
| DE1036392B (en) * | 1954-02-27 | 1958-08-14 | Philips Nv | Transistor with multi-substance emitter |
-
1959
- 1959-11-30 DE DED32006A patent/DE1128047B/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE968125C (en) * | 1951-09-24 | 1958-01-16 | Licentia Gmbh | Process for producing a barrier-free contact with germanium |
| DE1036392B (en) * | 1954-02-27 | 1958-08-14 | Philips Nv | Transistor with multi-substance emitter |
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