DE1124155C2 - - Google Patents
Info
- Publication number
- DE1124155C2 DE1124155C2 DE1959T0016889 DET0016889A DE1124155C2 DE 1124155 C2 DE1124155 C2 DE 1124155C2 DE 1959T0016889 DE1959T0016889 DE 1959T0016889 DE T0016889 A DET0016889 A DE T0016889A DE 1124155 C2 DE1124155 C2 DE 1124155C2
- Authority
- DE
- Germany
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/60—Impurity distributions or concentrations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10P32/16—
-
- H10P95/00—
-
- H10P95/50—
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET16889A DE1124155B (de) | 1959-07-04 | 1959-07-04 | Verfahren zur Herstellung eines nipin-Transistors |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DET16889A DE1124155B (de) | 1959-07-04 | 1959-07-04 | Verfahren zur Herstellung eines nipin-Transistors |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE1124155B DE1124155B (de) | 1962-02-22 |
| DE1124155C2 true DE1124155C2 (OSRAM) | 1962-09-06 |
Family
ID=7548381
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DET16889A Granted DE1124155B (de) | 1959-07-04 | 1959-07-04 | Verfahren zur Herstellung eines nipin-Transistors |
Country Status (1)
| Country | Link |
|---|---|
| DE (1) | DE1124155B (OSRAM) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL260829A (OSRAM) | 1960-02-04 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1036393B (de) * | 1954-08-05 | 1958-08-14 | Siemens Ag | Verfahren zur Herstellung von zwei p-n-UEbergaengen in Halbleiterkoerpern, z. B. Flaechentransistoren |
| BE547274A (OSRAM) * | 1955-06-20 |
-
1959
- 1959-07-04 DE DET16889A patent/DE1124155B/de active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| DE1124155B (de) | 1962-02-22 |