DE112011103927A5 - Vorrichtung zum Messen einer Ladungsträgerlebensdauer in einem Halbleitersubstrat - Google Patents

Vorrichtung zum Messen einer Ladungsträgerlebensdauer in einem Halbleitersubstrat Download PDF

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Publication number
DE112011103927A5
DE112011103927A5 DE112011103927T DE112011103927T DE112011103927A5 DE 112011103927 A5 DE112011103927 A5 DE 112011103927A5 DE 112011103927 T DE112011103927 T DE 112011103927T DE 112011103927 T DE112011103927 T DE 112011103927T DE 112011103927 A5 DE112011103927 A5 DE 112011103927A5
Authority
DE
Germany
Prior art keywords
measuring
semiconductor substrate
carrier lifetime
lifetime
carrier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE112011103927T
Other languages
English (en)
Inventor
Bernd Raabe
Giso Hahn
Gabriel Micard
David Kiliani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Universitaet Konstanz
Original Assignee
Universitaet Konstanz
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Universitaet Konstanz filed Critical Universitaet Konstanz
Publication of DE112011103927A5 publication Critical patent/DE112011103927A5/de
Withdrawn legal-status Critical Current

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Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/6489Photoluminescence of semiconductors
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/63Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light optically excited
    • G01N21/64Fluorescence; Phosphorescence
    • G01N21/6408Fluorescence; Phosphorescence with measurement of decay time, time resolved fluorescence
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01RMEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26Testing of individual semiconductor devices
    • G01R31/265Contactless testing
    • G01R31/2656Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02SGENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S50/00Monitoring or testing of PV systems, e.g. load balancing or fault identification
    • H02S50/10Testing of PV devices, e.g. of PV modules or single PV cells
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
DE112011103927T 2010-11-26 2011-08-26 Vorrichtung zum Messen einer Ladungsträgerlebensdauer in einem Halbleitersubstrat Withdrawn DE112011103927A5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010052701.7 2010-11-26
DE102010052701A DE102010052701A1 (de) 2010-11-26 2010-11-26 Vorrichtung zum Messen einer Ladungsträgerlebensdauer in einem Halbleitersubstrat
PCT/EP2011/064737 WO2012069220A1 (de) 2010-11-26 2011-08-26 Vorrichtung zum messen einer ladungsträgerlebensdauer in einem halbleitersubstrat

Publications (1)

Publication Number Publication Date
DE112011103927A5 true DE112011103927A5 (de) 2013-08-22

Family

ID=44584163

Family Applications (2)

Application Number Title Priority Date Filing Date
DE102010052701A Withdrawn DE102010052701A1 (de) 2010-11-26 2010-11-26 Vorrichtung zum Messen einer Ladungsträgerlebensdauer in einem Halbleitersubstrat
DE112011103927T Withdrawn DE112011103927A5 (de) 2010-11-26 2011-08-26 Vorrichtung zum Messen einer Ladungsträgerlebensdauer in einem Halbleitersubstrat

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE102010052701A Withdrawn DE102010052701A1 (de) 2010-11-26 2010-11-26 Vorrichtung zum Messen einer Ladungsträgerlebensdauer in einem Halbleitersubstrat

Country Status (2)

Country Link
DE (2) DE102010052701A1 (de)
WO (1) WO2012069220A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104345258B (zh) * 2013-08-07 2017-08-01 中国科学院物理研究所 光电响应测量装置
CN111398230A (zh) * 2019-03-27 2020-07-10 上海交通大学 一种时间门控荧光成像系统
CN112161946B (zh) * 2020-08-28 2022-04-15 复旦大学 一种频域发光寿命成像系统
CN111999885A (zh) * 2020-09-04 2020-11-27 之江实验室 一种电控可调光衰减装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2677106A (en) * 1950-12-02 1954-04-27 Bell Telephone Labor Inc Testing of semiconductors
JPS62124522A (ja) * 1985-11-25 1987-06-05 Canon Inc 照明光学系
WO2000006990A2 (en) * 1998-07-27 2000-02-10 Ljl Biosystems, Inc. Apparatus and methods for time-resolved spectroscopic measurements
US6621275B2 (en) * 2001-11-28 2003-09-16 Optonics Inc. Time resolved non-invasive diagnostics system
JP2008116395A (ja) * 2006-11-07 2008-05-22 Fujitsu Ltd 蛍光検出装置

Also Published As

Publication number Publication date
WO2012069220A1 (de) 2012-05-31
DE102010052701A1 (de) 2012-05-31

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R082 Change of representative

Representative=s name: QIP PATENTANWAELTE, DR. KUEHN & PARTNER MBB, DE

R119 Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee