DE1117168B - Transistor relay circuit - Google Patents

Transistor relay circuit

Info

Publication number
DE1117168B
DE1117168B DET17141A DET0017141A DE1117168B DE 1117168 B DE1117168 B DE 1117168B DE T17141 A DET17141 A DE T17141A DE T0017141 A DET0017141 A DE T0017141A DE 1117168 B DE1117168 B DE 1117168B
Authority
DE
Germany
Prior art keywords
transistor
voltage
circuit
alternating current
rectifiers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DET17141A
Other languages
German (de)
Inventor
Dr-Ing Werner Benz
Dipl-Phys Erich Baechle
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefunken Patentverwertungs GmbH
Original Assignee
Telefunken Patentverwertungs GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US634649A external-priority patent/US2866909A/en
Application filed by Telefunken Patentverwertungs GmbH filed Critical Telefunken Patentverwertungs GmbH
Priority to DET17141A priority Critical patent/DE1117168B/en
Publication of DE1117168B publication Critical patent/DE1117168B/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/601Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors using transformer coupling
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/64Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors having inductive loads
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/26Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback
    • H03K3/28Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback
    • H03K3/281Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator
    • H03K3/286Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of bipolar transistors with internal or external positive feedback using means other than a transformer for feedback using at least two transistors so coupled that the input of one is derived from the output of another, e.g. multivibrator bistable
    • H03K3/2893Bistables with hysteresis, e.g. Schmitt trigger

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)

Description

Bei der Steuerung elektrischer Stromkreise durch elektromechanische Relais, deren Betätigungs- und Schaltelemente in verschiedenen Stromkreisen angeordnet sind, ist der Steuerstromkreis vom Schaltstromkreis galvanisch getrennt. Eine solche galvanische Trennung ist bei einem Transistorrelais üblicher bekannter Ausführung nicht gegeben; es besteht hier daher der Nachteil, daß sich der Steuerstromkreis und der Schaltstromkreis gegenseitig beeinflussen.When controlling electrical circuits by electromechanical relays, their actuation and Switching elements are arranged in different circuits, the control circuit is from the switching circuit galvanically isolated. Such a galvanic separation is with a transistor relay usual known execution not given; there is therefore the disadvantage that the control circuit and the switching circuit affect each other.

Außerdem sind die bekannten Transistorrelais häufig so ausgebildet, daß im Schaltkreis der Emitter mit der positiven Klemme und der Kollektor mit der negativen Klemme einer Batterie über Widerstände oder andere Schaltelemente verbunden wird. Hierbei besteht die Möglichkeit, daß der Transistor durch falsches Anschließen der Batterie beschädigt wird.In addition, the known transistor relays are often designed so that the emitter in the circuit to the positive terminal and the collector to the negative terminal of a battery via resistors or other switching elements is connected. Here there is the possibility that the transistor through incorrect connection of the battery will be damaged.

Es ist eine die genannten Nachteile vermeidende Transistorrelaisschaltung bekannt, bei der eine gleichgerichtete, dem Auskopplungstransformator eines durch eine Tastspannung steuerbaren Wechselstromgenerators entnommene Wechselspannung einen Schalttransistor steuert, der in den Gleichstromzweig über einer Gleichrichterbrücke aus vier Gleichrichtern geschaltet ist, an deren Wechselstromzweig ein eine Gleichspannungsquelle enthaltender Laststromkreis angeschlossen ist, so daß für jede Polarität der Gleichspannungsquelle jeweils zwei Gleichrichter der Brücke in Durchlaßrichtung eingeschaltet sind.A transistor relay circuit which avoids the disadvantages mentioned is known in which a rectified, the decoupling transformer of an alternating current generator controllable by a probe voltage AC voltage taken controls a switching transistor, which is in the direct current branch is connected via a rectifier bridge made up of four rectifiers, on whose alternating current branch a one DC voltage source containing load circuit is connected, so that for each polarity of DC voltage source two rectifiers of the bridge are switched on in the forward direction.

Es ist nun in vielen Fällen erwünscht, daß eine solche Transistorrelaisschaltung nur auf Tastspannungen reagiert, die zwischen zwei nur um einen geringen Betrag voneinander verschiedenen Schwellwerten liegen. Dies wird erfindungsgemäß dadurch erreicht, daß der Wechselstromgenerator einen in Basisschaltung arbeitenden Transistor enthält, der gleichzeitig Bestandteil einer aus zwei emittergekoppelten Transistoren bestehenden, auf eine Schwellspannung ansprechende Kippschaltung (Schmitt-Trigger) ist, welche die Tastspannung für den Wechselstromgenerator liefert.It is now desirable in many cases that such a transistor relay circuit only on key voltages responds that between two threshold values that differ from one another only by a small amount lie. This is achieved according to the invention in that the alternating current generator has a basic circuit contains working transistor, which is also part of one of two emitter-coupled transistors is an existing flip-flop circuit (Schmitt trigger) that responds to a threshold voltage, which supplies the sampling voltage for the alternator.

Die Figur zeigt ein Ausführungsbeispiel der Erfindung. Als Kippschaltung für die Steuerung des Generators dient ein Schmitt-Trigger mit zwei Transistoren Ts1 und Ts2, die einen gemeinsamen Emitterwiderstand i?4 aufweisen.The figure shows an embodiment of the invention. A Schmitt trigger with two transistors Ts 1 and Ts 2 , which have a common emitter resistance i? 4 have.

Der Schmitt-Trigger kann je nach Steuerung an der Eingangselektrode eine von zwei stabilen Lagen einnehmen. Irgendwelche Zwischenstellungen sind bei dieser Anordnung nicht möglich. Wird eine bestimmte Ansprechschwelle, welche durch die Dimensionierung bestimmt wird, überschritten, so TransistorrelaisschaltungDepending on the control, the Schmitt trigger can have one of two stable positions on the input electrode take in. Any intermediate positions are not possible with this arrangement. Will be a certain response threshold, which is determined by the dimensioning, exceeded, see above Transistor relay circuit

Anmelder:Applicant:

TelefunkenTelefunken

Patentverwertungsgesellschaft m. b. H.,
Ulm/Donau, Elisabethenstr. 3
Patentverwertungsgesellschaft mb H.,
Ulm / Danube, Elisabethenstr. 3

Dr.-Ing. Werner Benz und Dipl.-Phys. Erich Bächle,Dr.-Ing. Werner Benz and Dipl.-Phys. Erich Bächle,

Backnang (Württ),
sind als Erfinder genannt worden
Backnang (Württ),
have been named as inventors

springt die Schaltung von der einen stabilen Lage in die andere. Sie springt wieder zurück in die erste Lage, wenn die Ansprechschwelle um einen bestimmten Betrag unterschritten wird. Die Werte, die das Hin- und Zurückkippen bewirken, sind um einen geringen Betrag voneinander verschieden.the circuit jumps from one stable position to the other. She jumps back into the first one Position when the response threshold is undershot by a certain amount. The values that the Tilting back and forth are different from each other by a small amount.

Im Ruhezustand der Einrichtung, d. h. wenn dem TransistorTs1 an den Klemmen«, b keine Steuerspannung zugeführt wird, ist die Basis des Transistors Ti1 durch die Spannungsteilung der Widerstände R1, R2 negativ gegen den Emitter vorgespannt. Der Transistor Ts1 führt einen Strom über die Widerstände Rs und i?4, wodurch die Spannungsteilung der Widerstände R3, R4, R6 und R7 an der Basis des Transistors Ts2 eine Vorspannung bewirkt, die den Transistor Ts2 sperrt.In the idle state of the device, ie when no control voltage is fed to the transistor Ts 1 at the terminals, b , the base of the transistor Ti 1 is negatively biased towards the emitter by the voltage division of the resistors R 1 , R 2. The transistor Ts 1 carries a current through the resistors R s and i? 4 , whereby the voltage division of the resistors R 3 , R 4 , R 6 and R 7 at the base of the transistor Ts 2 causes a bias voltage which blocks the transistor Ts 2.

Wenn an den Klemmen a, b bezüglich der Basis des Transistors Ts1 eine positive Steuerspannung auftritt, die größer ist als die Ansprechspannung, so wird dieser Transistor gesperrt. Dadurch verändert sich die Basisspannung für den Transistor Ti2, so daß dieser stromleitend wird. Dieser Zustand bleibt bestehen, bis die Abfallspannung an den Klemmen a, b unterschritten und der Ausgangszustand wiederhergestellt wird.If a positive control voltage occurs at the terminals a, b with respect to the base of the transistor Ts 1 which is greater than the response voltage, this transistor is blocked. This changes the base voltage for the transistor Ti 2 , so that it becomes conductive. This state remains until the voltage drops below the dropout voltage at terminals a, b and the initial state is restored.

In der vorliegenden Anordnung bewirkt der Transistor Ts2 nicht nur eine Kippsteuerung, sondern er dient auch als Schwingungserzeuger. Mit der Primärwicklung des Übertragers Ü und den Kondensatoren C1 bis C4 bildet der Transistor Ij2 einen Dreipunktgenerator, wobei dieser in Basisschaltung betrieben wird. Der Schwingzustand dieses Generators ist er-In the present arrangement, the transistor Ts 2 not only effects tilt control, but also serves as a vibration generator. With the primary winding of the transformer U and the capacitors C 1 to C 4 , the transistor Ij 2 forms a three-point generator, which is operated in a base circuit. The oscillation state of this generator is

109 739/281109 739/281

reicht, wenn an den Klemmen α, b die Ansprechspannung überschntten und der Transistor Ts2 stromleitend wird.is sufficient if the response voltage at the terminals α, b overshoots and the transistor Ts 2 is conductive.

Im Ausgangskreis des Transistors Ts2 wird die Schwingenergie durch den Transformator U ausgekoppelt
Der in
In the output circuit of the transistor Ts 2 , the oscillation energy is decoupled by the transformer U
The in

und gleichgerichtet am Gleichrichter Gr6 derand rectified at the rectifier Gr 6 of the

Emitterschaltung angeordnete Schalttransistor Ts3 dient als elektronischer Schalter. Wenn an den Klemmen c, d der Sekundärwicklung des Übertragers Ü eine Steuerspannung auftritt, d. h. wenn die Basis gegenüber dem Emitter ein negatives Potential erhält, wird der Schalttransistor Ts3 leitend. Die am Ausgang der Anordnung, zwischen den Klemmen e, f bestehende Betriebsspannung U liegt am Stromkreis: Switching transistor Ts 3 arranged in the emitter circuit serves as an electronic switch. When a control voltage occurs at the terminals c, d of the secondary winding of the transformer U , ie when the base receives a negative potential with respect to the emitter, the switching transistor Ts 3 becomes conductive. The operating voltage U existing at the output of the arrangement, between terminals e, f , is applied to the circuit:

Gr4, Gr5 Size 4 , size 5

TsJR0,TsJR 0 ,

Gr2, RLe(-),Gr 2 , R L e (-),

1010

wobei die Gleichrichter Gr4 und Gr2 bezüglich der Polarität dieser Spannung in Durchlaßrichtung angeordnet sind. Dagegen bewirken die Gleichrichter Gr1 und Gr3 eine Sperrung dieser Spannung.the rectifiers Gr 4 and Gr 2 are arranged in the forward direction with respect to the polarity of this voltage. In contrast, the rectifiers Gr 1 and Gr 3 cause this voltage to be blocked.

Bei Umkehrung der Betriebsspannung U liegt diese am Stromkreis:When the operating voltage U is reversed, it is applied to the circuit:

e(+), Rl, Gr3, Gr., Ts3ZR9, Gr1, /(-), e (+), Rl, Gr 3 , Gr., Ts 3 ZR 9 , Gr 1 , / (-),

2525th

wobei die Gleichrichter Gr1 und Gr3 bezüglich der Polarität dieser Spannung in Durchlaßrichtung angeordnet sind. Die Gleichrichter Gr2 und Gr4 sperren diese Spannung.wherein the rectifiers Gr 1 and Gr 3 are arranged with respect to the polarity of this voltage in the forward direction. The rectifiers Gr 2 and Gr 4 block this voltage.

Claims (1)

PATENTANSPRUCH:PATENT CLAIM: Transistorrelaisschaltung, bei der eine gleichgerichtete, dem Auskopplungstransformator eines durch eine Tastspannung steuerbaren Wechselstromgenerators entnommene Wechselspannung einen Schalttransistor steuert, der in den Gleichstromzweig über einer Gleichrichterbrücke aus vier Gleichrichtern geschaltet ist, an deren Wechselstromzweig ein eine Gleichspannungsquelle enthaltender Laststromkreis angeschlossen ist, so daß für jede Polarität der Gleichspannungsquelle jeweils zwei Gleichrichter der Brücke in Durchlaßrichtung eingeschaltet sind, dadurch gekennzeich net, daß der Wechselstromgenerator einen in Basisschaltung arbeitenden Transistor (Ts2) enthält, der gleichzeitig Bestandteil einer aus zwei emittergekoppelten Transistoren (Ts1, Ts2) bestehenden, auf eine Schwellspannung ansprechenden Kippschaltung ist, welche die Tastspannung für den Wechselstromgenerator liefert.Transistor relay circuit, in which a rectified alternating voltage taken from the decoupling transformer of an alternating current generator controllable by a probe voltage controls a switching transistor which is connected to the direct current branch via a rectifier bridge made up of four rectifiers, to whose alternating current branch a load circuit containing a direct voltage source is connected, so that for each polarity of the DC voltage source, two rectifiers of the bridge are switched on in the forward direction, characterized in that the alternating current generator contains a transistor (Ts 2 ) operating in a base circuit, which is also part of a threshold voltage consisting of two emitter-coupled transistors (Ts 1 , Ts 2 ) is responsive flip-flop which supplies the duty cycle for the alternator. In Betracht gezogene Druckschriften:
Deutsche Auslegeschrift Nr. 1 063 208;
USA.-Patentschrift Nr. 2 866 909.
Considered publications:
German Auslegeschrift No. 1 063 208;
U.S. Patent No. 2,866,909.
Hierzu 1 Blatt Zeichnungen1 sheet of drawings © 109 739/281 11.61© 109 739/281 11.61
DET17141A 1957-01-17 1959-08-29 Transistor relay circuit Pending DE1117168B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DET17141A DE1117168B (en) 1957-01-17 1959-08-29 Transistor relay circuit

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US634649A US2866909A (en) 1957-01-17 1957-01-17 Electronic switch
DET17141A DE1117168B (en) 1957-01-17 1959-08-29 Transistor relay circuit

Publications (1)

Publication Number Publication Date
DE1117168B true DE1117168B (en) 1961-11-16

Family

ID=25999335

Family Applications (1)

Application Number Title Priority Date Filing Date
DET17141A Pending DE1117168B (en) 1957-01-17 1959-08-29 Transistor relay circuit

Country Status (1)

Country Link
DE (1) DE1117168B (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1179591B (en) * 1963-01-30 1964-10-15 Siemens Ag Magnetic field-dependent arrangement for keying a signal transmitter using a transistor oscillator
DE1186507B (en) * 1963-05-25 1965-02-04 Standard Elektrik Lorenz Ag Circuit arrangement for preventing reverse current in a transistor
DE1192254B (en) * 1963-09-11 1965-05-06 Siemens Ag Circuit arrangement for alternating current control for emitting an output signal which is dependent on the phase position of an alternating current input signal relative to a control signal
DE1200356B (en) * 1964-03-04 1965-09-09 Int Standard Electric Corp Circuit arrangement for the electronic simulation of a telegraph relay for double current operation
DE1218507B (en) * 1963-01-08 1966-06-08 Hurth Masch Zahnrad Carl Transistor relay switching device
DE1222975B (en) * 1963-12-04 1966-08-18 Hurth Masch Zahnrad Carl Transistor relay switching device
DE1236568B (en) * 1965-03-09 1967-03-16 Bbc Brown Boveri & Cie Gate circuit for direct and alternating currents
DE1244241B (en) * 1964-07-29 1967-07-13 Siemens Ag Circuit arrangement for switching on or off or reversing the polarity of an output direct current by means of short input pulses
DE1244242B (en) * 1964-09-01 1967-07-13 Siemens Ag Circuit arrangement with feedback generator for converting pulse combinations arriving in series into rectangular currents or sinus currents and re-rectification
DE1247392B (en) * 1965-07-08 1967-08-17 Siemens Ag Contactless switching device for switching on one of two galvanically separated alternating current circuits
DE1272982B (en) * 1966-08-12 1968-07-18 Siemens Ag Electronic switch with several galvanically separated circuits for alternating or pulsating direct currents
DE1285533B (en) * 1966-07-13 1968-12-19 Thomson Houston Comp Francaise Circuit for transmitting pulses between two logic circuits controlled by non-synchronous timers
DE1296187B (en) * 1966-04-15 1969-05-29 Thomson Houston Comp Francaise Electronic circuit that can be used as an electronic relay for switching at least one voltage
DE2258722A1 (en) * 1971-12-01 1973-06-07 Amf Inc TELEGRAPH RELAY
DE3028986A1 (en) * 1980-07-30 1982-03-04 Siemens AG, 1000 Berlin und 8000 München MOS FET switch - has triple wound input transformer with blocking oscillator
DE2411871C2 (en) * 1974-03-12 1984-09-13 Nixdorf Computer Ag, 4790 Paderborn Circuit arrangement for the floating transmission of signals via isolating points in telecommunications systems

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2866909A (en) * 1957-01-17 1958-12-30 Gen Dynamics Corp Electronic switch
DE1063208B (en) * 1956-12-19 1959-08-13 Telefunken Gmbh Electronic switch with a diode bridge

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1063208B (en) * 1956-12-19 1959-08-13 Telefunken Gmbh Electronic switch with a diode bridge
US2866909A (en) * 1957-01-17 1958-12-30 Gen Dynamics Corp Electronic switch

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1218507B (en) * 1963-01-08 1966-06-08 Hurth Masch Zahnrad Carl Transistor relay switching device
DE1179591B (en) * 1963-01-30 1964-10-15 Siemens Ag Magnetic field-dependent arrangement for keying a signal transmitter using a transistor oscillator
DE1186507B (en) * 1963-05-25 1965-02-04 Standard Elektrik Lorenz Ag Circuit arrangement for preventing reverse current in a transistor
DE1192254B (en) * 1963-09-11 1965-05-06 Siemens Ag Circuit arrangement for alternating current control for emitting an output signal which is dependent on the phase position of an alternating current input signal relative to a control signal
DE1222975B (en) * 1963-12-04 1966-08-18 Hurth Masch Zahnrad Carl Transistor relay switching device
DE1200356B (en) * 1964-03-04 1965-09-09 Int Standard Electric Corp Circuit arrangement for the electronic simulation of a telegraph relay for double current operation
DE1244241B (en) * 1964-07-29 1967-07-13 Siemens Ag Circuit arrangement for switching on or off or reversing the polarity of an output direct current by means of short input pulses
DE1244242B (en) * 1964-09-01 1967-07-13 Siemens Ag Circuit arrangement with feedback generator for converting pulse combinations arriving in series into rectangular currents or sinus currents and re-rectification
DE1236568B (en) * 1965-03-09 1967-03-16 Bbc Brown Boveri & Cie Gate circuit for direct and alternating currents
DE1247392B (en) * 1965-07-08 1967-08-17 Siemens Ag Contactless switching device for switching on one of two galvanically separated alternating current circuits
DE1296187B (en) * 1966-04-15 1969-05-29 Thomson Houston Comp Francaise Electronic circuit that can be used as an electronic relay for switching at least one voltage
DE1285533B (en) * 1966-07-13 1968-12-19 Thomson Houston Comp Francaise Circuit for transmitting pulses between two logic circuits controlled by non-synchronous timers
DE1272982B (en) * 1966-08-12 1968-07-18 Siemens Ag Electronic switch with several galvanically separated circuits for alternating or pulsating direct currents
DE2258722A1 (en) * 1971-12-01 1973-06-07 Amf Inc TELEGRAPH RELAY
DE2411871C2 (en) * 1974-03-12 1984-09-13 Nixdorf Computer Ag, 4790 Paderborn Circuit arrangement for the floating transmission of signals via isolating points in telecommunications systems
DE3028986A1 (en) * 1980-07-30 1982-03-04 Siemens AG, 1000 Berlin und 8000 München MOS FET switch - has triple wound input transformer with blocking oscillator

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