DE1115937B - Process for the plastic deformation of germanium and silicon - Google Patents

Process for the plastic deformation of germanium and silicon

Info

Publication number
DE1115937B
DE1115937B DES29832A DES0029832A DE1115937B DE 1115937 B DE1115937 B DE 1115937B DE S29832 A DES29832 A DE S29832A DE S0029832 A DES0029832 A DE S0029832A DE 1115937 B DE1115937 B DE 1115937B
Authority
DE
Germany
Prior art keywords
germanium
silicon
plastic deformation
temperature
plastic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES29832A
Other languages
German (de)
Inventor
Dr Rer Nat Dietrich Geist
Dr Phil Habil Karl Seiler
Dr-Ing Ludwig Graf
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent Deutschland AG
Original Assignee
Standard Elektrik Lorenz AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Elektrik Lorenz AG filed Critical Standard Elektrik Lorenz AG
Priority to DES29832A priority Critical patent/DE1115937B/en
Publication of DE1115937B publication Critical patent/DE1115937B/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C3/00—Profiling tools for metal drawing; Combinations of dies and mandrels
    • B21C3/02—Dies; Selection of material therefor; Cleaning thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21B—ROLLING OF METAL
    • B21B3/00—Rolling materials of special alloys so far as the composition of the alloy requires or permits special rolling methods or sequences ; Rolling of aluminium, copper, zinc or other non-ferrous metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/16—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of other metals or alloys based thereon

Description

Verfahren zur plastischen Verformung von Germanium und Silicium Bekanntlich gehören Germanium und Silicium zu den Stoffen, deren hervorstechendste Eigenschaft ihre Sprödigkeit ist. Die Bearbeitung dieser Stoffe erfolgte aus diesem Grunde bisher allein durch Sägen, Schleifen, Atzen oder Gießen. Der Erwägung, diese Stoffe plastisch zu verformen, standen so starke theoretische Vorstellungen über die Gitterstruktur entgegen, daß kein Versuch gemacht wurde, in dieser Weise vorzugehen. Lediglich für den Temperaturbereich des Schmelzpunktes liegen theoretische Vorstellungen vor, welche die plastische Verformung möglich erscheinen lassen.Process for the plastic deformation of germanium and silicon is known Germanium and silicon are among the substances whose most prominent property is their brittleness is. For this reason, these substances have been processed up to now just by sawing, grinding, etching or casting. Considering these fabrics plastic To deform, there were so strong theoretical ideas about the lattice structure contrary to the fact that no attempt was made to proceed in this way. Only Theoretical ideas are available for the temperature range of the melting point, which make the plastic deformation appear possible.

Das bestehende Vorurteil ist aus der Vorstellung entstanden, daß Kristalle mit hoher Koordinationszahl plastisch gut verformbar sind, während sich Kristalle mit verhältnismäßig niedriger Koordinationszahl nicht verformen lassen, da bei ihnen zwar Versetzungen entstehen können, eine Versetzungswanderung jedoch nicht eintritt. Die experimentellen Ergebnisse haben gezeigt, daß insbesondere Kristalle von tetraedrischem Kristallgitteraufbau, wie der Diamant mit der Koordinationszahl 4, plastisch nicht verformbar sind. Die Halbleiterelemente Silicium und Germanium fallen wegen derselben Kristallstruktur unter das gleiche Vorurteil.The existing prejudice arose from the idea that crystals with a high coordination number are plastically deformable, while crystals are Do not let deform with a relatively low coordination number, because they dislocations can arise, however, a dislocation migration does not occur. The experimental results have shown that in particular crystals of tetrahedral Crystal lattice structure, like the diamond with the coordination number 4, is not plastic are deformable. The semiconductor elements silicon and germanium fall because of the same Crystal structure under the same prejudice.

Entgegen diesen Vorstellungen und Erfahrungen wurde gefunden, daß die genannten Stoffe im Temperaturbereich unterhalb des Schmelzpunktes leicht verformbar sind. Dementsprechend besteht die Erfindung in einem Verfahren zur plastischen Verformung von Germanium und Silicium, das dadurch gekennzeichnet ist, daß diese Verformung bei einer Temperatur von etwa 800° C (Germanium) bzw. bei einer Temperatur von etwa 1100° C (Silicium) erfolgt.Contrary to these ideas and experiences, it was found that the substances mentioned are easily deformable in the temperature range below the melting point are. Accordingly, the invention resides in a method of plastic deformation of germanium and silicon, which is characterized by the fact that this deformation at a temperature of about 800 ° C (germanium) or at a temperature of about 1100 ° C (silicon) takes place.

Die plastische Verformung kann erfindungsgemäß benutzt werden, um Bleche zu walzen, Rohre oder Drähte zu ziehen, Profile zu biegen, Bleche zu stanzen, usw.The plastic deformation can be used according to the invention to Rolling sheets, drawing pipes or wires, bending profiles, punching sheets, etc.

Claims (1)

PATENTANSPRUCH: Verfahren zur plastischen Verformung von Germanium und Silicium, dadurch gekennzeichnet, daß diese Verformung bei einer Temperatur von etwa 800° C (Germanium) bzw. bei einer Temperatur von etwa 1100° C (Silicium) erfolgt. In Betracht gezogene Druckschriften: Deutsche Patentschrift Nr. 567 696; H a l l a, »Kristallchemie und Kristallphysik metallischer Werkstoffe«, 1939, S. 142/143; Kochendörfer, »Plastische Eigenschaften von Kristallen und metallischen Werkstoffen«, 1940, S.131.PATENT CLAIM: Process for the plastic deformation of germanium and silicon, characterized in that this deformation occurs at a temperature of around 800 ° C (germanium) or at a temperature of around 1100 ° C (silicon) he follows. Documents considered: German Patent No. 567 696; H a l l a, "Crystal Chemistry and Crystal Physics of Metallic Materials", 1939, p. 142/143; Kochendörfer, »Plastic properties of crystals and metallic Materials «, 1940, p.131.
DES29832A 1952-08-19 1952-08-19 Process for the plastic deformation of germanium and silicon Pending DE1115937B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES29832A DE1115937B (en) 1952-08-19 1952-08-19 Process for the plastic deformation of germanium and silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES29832A DE1115937B (en) 1952-08-19 1952-08-19 Process for the plastic deformation of germanium and silicon

Publications (1)

Publication Number Publication Date
DE1115937B true DE1115937B (en) 1961-10-26

Family

ID=7479921

Family Applications (1)

Application Number Title Priority Date Filing Date
DES29832A Pending DE1115937B (en) 1952-08-19 1952-08-19 Process for the plastic deformation of germanium and silicon

Country Status (1)

Country Link
DE (1) DE1115937B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219379B (en) * 1962-08-29 1966-06-16 Siemens Ag Method for the production of crystalline semiconductor wafers for semiconductor components from a crystalline semiconductor rod
WO2010062357A1 (en) * 2008-10-31 2010-06-03 Globalfoundries Inc. Method and device for fabricating bonding wires on the basis of microelectronic manufacturing techniques

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE567696C (en) * 1931-01-10 1933-01-07 Metallgesellschaft Ag Improvement of the mechanical properties, in particular the strength of compounds of metals with silicon or phosphorus or of alloys with a content of these compounds in excess of 40%

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE567696C (en) * 1931-01-10 1933-01-07 Metallgesellschaft Ag Improvement of the mechanical properties, in particular the strength of compounds of metals with silicon or phosphorus or of alloys with a content of these compounds in excess of 40%

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1219379B (en) * 1962-08-29 1966-06-16 Siemens Ag Method for the production of crystalline semiconductor wafers for semiconductor components from a crystalline semiconductor rod
WO2010062357A1 (en) * 2008-10-31 2010-06-03 Globalfoundries Inc. Method and device for fabricating bonding wires on the basis of microelectronic manufacturing techniques
US8561446B2 (en) 2008-10-31 2013-10-22 Globalfoundries Inc. Method and device for fabricating bonding wires on the basis of microelectronic manufacturing techniques
CN102215994B (en) * 2008-10-31 2016-02-10 格罗方德半导体公司 Method and the device of bonding line is manufactured based on microelectronic manufacturing technology

Similar Documents

Publication Publication Date Title
DE1134459B (en) Semiconductor component with a semiconductor body made of silicon
DE2654063A1 (en) METHOD OF MANUFACTURING A RIBBON OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL
DE2038564C3 (en) Quartz glass device part, in particular quartz glass tube, with nuclei that promote crystal formation contained in its outer surface layer for use at high temperatures, in particular for carrying out semiconductor technology processes
DE1115937B (en) Process for the plastic deformation of germanium and silicon
DE1264406B (en) Anti-foaming agents
DE1199098B (en) Process for the etching of essentially single-crystal semiconductor bodies
DE1544281B2 (en) Method for doping silicon semiconductor material
DE2318662B1 (en) Use of a copper material
DE508064C (en) Manufacture of sulfuric acid
DE810225C (en) Process for hardening alloys by diffusing in a metalloid
DE1275208B (en) Controllable semiconductor rectifier
AT100208B (en) Process for the mechanical processing of wires, strips, etc. consisting of one or more crystals made of difficult-to-melt metals.
DE855604C (en) Process for the production of a collector, in particular for direct current machines
AT231512B (en) Process for manufacturing semiconductor devices
DE1139210B (en) Process for the selection of the material for the production of semiconductor arrangements with pn-junction
AT239308B (en) Process for the controlled reduction of the area of transitions
DE943604C (en) Method for stabilizing the electrical properties of semiconductor material
AT229911B (en) Process for the etching of essentially single-crystal semiconductor bodies
DE837317C (en) Process for the production of copper foils for rectifier elements
AT108418B (en) Process for producing drawn metal wire, preferably from tungsten.
DE1914563A1 (en) Process for the manufacture of an electroluminescent element
DE1223814B (en) Process for the production of interference semiconductor systems
DE850437C (en) Process for the production of pipes with a roughened surface
DE3012009A1 (en) METHOD FOR PRODUCING SEMI-FINISHED PRODUCTS AND FINISHED PARTS FROM AN ALMNSI ALLOY
DE1041987B (en) Thermocouple, especially for thermoelectric cold generation