DE1114941B - Process for the production of a boron-doped region of monocrystalline semiconductor bodies - Google Patents
Process for the production of a boron-doped region of monocrystalline semiconductor bodiesInfo
- Publication number
- DE1114941B DE1114941B DES71692A DES0071692A DE1114941B DE 1114941 B DE1114941 B DE 1114941B DE S71692 A DES71692 A DE S71692A DE S0071692 A DES0071692 A DE S0071692A DE 1114941 B DE1114941 B DE 1114941B
- Authority
- DE
- Germany
- Prior art keywords
- boron
- gold
- production
- semiconductor bodies
- doped region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 19
- 229910052796 boron Inorganic materials 0.000 claims description 17
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 239000011888 foil Substances 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 238000002844 melting Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 description 7
- 239000000956 alloy Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 241000947853 Vibrionales Species 0.000 description 1
- OFLYIWITHZJFLS-UHFFFAOYSA-N [Si].[Au] Chemical compound [Si].[Au] OFLYIWITHZJFLS-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- OPEKUPPJGIMIDT-UHFFFAOYSA-N boron gold Chemical compound [B].[Au] OPEKUPPJGIMIDT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Die Bonding (AREA)
Description
Verfahren zur Herstellung eines mit Bor dotierten Bereiches von einkristallinen Halbleiterkörpern Halbleiteranordnungen wie Gleichrichter, Transistoren, Fotodioden u. dgl. bestehen meistens aus einem im wesentlichen einkristallinen Grundkörper aus Germanium, Silizium oder einer intermetallischen Verbindung von Elementen der IIl. und V. Gruppe des Periodischen Systems, auf dem Elektroden aufgebracht sind.Process for the production of a boron-doped region of monocrystalline Semiconductor bodies semiconductor arrangements such as rectifiers, transistors, photodiodes and the like mostly consist of an essentially monocrystalline base body of germanium, silicon or an intermetallic compound of elements of the IIl. and V. group of the periodic table on which electrodes are applied.
Das Aufbringen der Elektroden kann auf verschiedene Art erfolgen, beispielsweise durch Diffusion oder Legierung. Bei dem Legierungsverfahren wird gewöhnlich eine Folie aus dem Dotierungsstoff bzw. eine Folie aus einem den Dotierungsstoff enthaltenden Material auf eine Halbleiterscheibe aufgelegt und durch eine Wärmebehandlung auflegiert. Hierbei bildet sich eine flüssige Legierung, aus der beim nachfolgenden Erstarren in dem zuerst rekristallisierenden Halbleiterstoff ein kleiner Teil des Dotierungsmaterials verbleibt, während die Restschmelze als Eutektikum erstarrt. Es entsteht in dem Halbleiterkörper eine hochdotierte Rekristallisationszone mit einer auflegierten Schicht aus dem Legierungsmaterial, die etwas Halbleitermaterial gelöst enthält.The electrodes can be applied in different ways, for example by diffusion or alloy. In the alloying process, usually a foil made of the dopant or a foil made of one of the dopant containing material placed on a semiconductor wafer and subjected to a heat treatment alloyed. A liquid alloy is formed here, from which the following A small part of the solidify in the first recrystallizing semiconductor material Doping material remains while the residual melt solidifies as a eutectic. A highly doped recrystallization zone also arises in the semiconductor body an alloyed layer of the alloy material containing some semiconductor material contains dissolved.
Die Erfindung betrifft ein Verfahren zur Herstellung eines mit Bor dotierten Bereiches in einkristallinen Halbleiterkörpern, insbesondere aus Silizium, durch Auflegieren von Folien aus Bor enthaltendem Gold. Es ist gekennzeichnet durch die Verwendung einer Folie, die in der Weise hergestellt ist, daß Goldpulver und Borpulver innig miteinander gemengt, unter Druck zusammengepreßt und mehrere Tage lang bei einer für eine Diffusion des Bors genügenden Temperatur unterhalb der Schmelztemperatur des Goldes, vorzugsweise bei etwa 900° C, getempert werden, und daß der entstandene Preßling anschließend geschmolzen und danach zu einer Folie ausgewalzt wird.The invention relates to a method for producing a with boron doped area in monocrystalline semiconductor bodies, in particular made of silicon, by alloying foils of gold containing boron. It is characterized by the use of a foil made in such a way that gold powder and Boron powder intimately mixed with one another, compressed under pressure and several days long at a temperature below the melting temperature sufficient for diffusion of the boron of the gold, preferably at about 900 ° C, are annealed, and that the resulting The compact is then melted and then rolled out into a film.
Es ist bereits ein Verfahren zur Herstellung eines n-dotierten Bereiches in Körpern aus Silizium bekanntgeworden, bei dem einem aus Gold bestehenden Teil vor dessen Verbindung mit dem Silizium ein Donatorelement, z. B. Antimon, zulegiert wird.It is already a method for producing an n-doped region in bodies made of silicon, one of which is made of gold a donor element, e.g. B. antimony, added will.
Ferner ist es bekannt, zur Herstellung eines p-dotierten Bereiches in Körpern aus Halbleitermaterial auf diese ein aus Aluminium bestehendes Teil aufzulegieren. Dieses Verfahren hat den Nachteil, daß hierbei relativ hohe Temperaturen (700° C) zur Anwendung kommen müssen, wodurch die Lebensdauer der Minoritätsträger stärker herabgesetzt wird als bei der Einlegierung von Teilen aus Geld in den Halbleiterkörper (400 bis 500° C).It is also known to produce a p-doped region to alloy a part made of aluminum in bodies made of semiconductor material. This process has the disadvantage that relatively high temperatures (700 ° C) must be applied, making the life of minority carriers stronger is reduced than when alloying parts made of money in the semiconductor body (400 to 500 ° C).
Es hat deshalb nicht an Anstrengungen gefehlt, die günstigen Bedingungen beim Auflegieren von Teilen aus Gold, die das Dotierungsmaterial enthalten, auf Halbleiterkörper auch zur Herstellung. von mit Bor dotierten Bereichen auszunutzen, weil mit Bor wegen seiner hohen Löslichkeit im Silizium - der Verteilungskoeffizient ist nahezu 1 - eine hohe Dotierungskonzentration erreicht werden kann. Das Einbringen von Bor durch Diffusion gemäß einem bekannten Verfahren weist den Nachteil sehr hoher Temperaturen (900 bis 1300° C) und der damit verbundenen starken Herabsetzung der Lebensdauer der Minoritätsträger auf. Da Bor mit Gold nicht zusammengeschmolzen werden kann (es löst sich nicht im Gold, sondern treibt aus der Schmelze auf), wurde bereits der Vorschlag gemacht, festes Bor in die flüssige Gold-Silizium-Legierung in der Weise einzuführen, daß zunächst amorphes Bor in Pulverform in eine Goldfolie mechanisch eingewalzt oder fein verteilt auf diese aufgestreut wird und dann diese Goldfolie auf den Halbleiterkörper aufgelegt und das Ganze erwärmt wird. Hierbei bildet das Geld mit einem Teil des Halbleitermaterials eine flüssige Legierung, in welche Bor ein- und bis zur Legierungsfront vordringt.There has therefore been no lack of effort, the favorable conditions when alloying parts made of gold that contain the doping material Semiconductor bodies also for manufacture. to take advantage of areas doped with boron, because with boron because of its high solubility in silicon - the partition coefficient is almost 1 - a high doping concentration can be achieved. Bringing in boron by diffusion according to a known method has the disadvantage very much high temperatures (900 to 1300 ° C) and the associated strong reduction the lifetime of the minority carriers. Because boron did not melt together with gold (it does not dissolve in the gold, but drifts up from the melt), became the proposal has already been made to incorporate solid boron into the liquid gold-silicon alloy to introduce amorphous boron in powder form into a gold foil mechanically rolled in or finely scattered on this and then this Gold foil is placed on the semiconductor body and the whole is heated. Here the money forms a liquid alloy with part of the semiconductor material, in which boron penetrates and up to the alloy front.
Das Verfahren nach der Erfindung zeigt nun einen Weg, borhaltiges Gold zu erzeugen und mit Hilfe von aus diesem borhaltigen Gold hergestellten Folien einen mit Bor dotierten Bereich in Halbleiterkörpern durch einen Legierungsvorgang herzustellen. Werden Goldpulver und Borpulver innig miteinander gemengt, unter Druck zusammengepreßt und mehrere Tage lang bei einer unterhalb der Schmelztemperatur des Goldes liegenden entsprechend hohen Temperatur getempert, so diffundiert Bor in genügender Menge in das angrenzende Gold bzw. umgekehrt, so daß hierdurch in etwa eine Bor-Gold-Legierung entsteht. Das Bor liegt im Gold nicht mehr in (relativ) grobstückiger, sondern in der Hauptsache in molekularer Verteilung vor. Auch beim anschließenden. Schmelzen und Auswalzen zu einer Folie findet keine Entmischung in einem' ins Gewicht fallenden Ausmaß statt.The method according to the invention now shows a way of producing boron-containing gold and using foils produced from this boron-containing gold to produce a boron-doped region in semiconductor bodies by an alloying process. If gold powder and boron powder are intimately mixed with one another, pressed together under pressure and tempered for several days at a correspondingly high temperature below the melting temperature of the gold, then boron diffuses in sufficient quantities into the adjacent gold or vice versa, so that as a result approximately a boron Gold alloy is created. The boron is no longer present in gold in (relatively) coarse, but mainly in a molecular distribution. Even with the subsequent . Melting and rolling into a film does not take place to a significant extent.
Das Verfahren wird deshalb' in folgender Weise durchgeführt: Goldpulver und Borpulver werden innig gemengt, unter Druck zusammengepreßt und im Vakuum oder unter Schutzgas bei etwa 900° C mehrere Tage getempert und anschließend geschmolzen. Danach wird die so entstandene Goldlegierung ausgewalzt, und daraus hergestellte Scheiben werden auf den Halbleiterkörper auflegiert.The procedure is therefore carried out in the following way: Gold powder and boron powder are intimately mixed, compressed under pressure and in vacuo or tempered under protective gas at around 900 ° C for several days and then melted. Then the resulting gold alloy is rolled out and manufactured from it Disks are alloyed onto the semiconductor body.
Das erfindungsgemäße Verfahren kann zweckmäßig im Zusammenhang mit den in den deutschen Bundespatenten 1015152 und 1046198 geschützten Verfahren sowie im Zusammenhang mit dem in der deutschen Auslegeschrift 1089 074 beschriebenen Verfahren angewendet werden.The method according to the invention can be useful in connection with the processes protected in the German federal patents 1015152 and 1046198 as well as in connection with the method described in German Auslegeschrift 1089 074 be applied.
Claims (2)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL300609A NL300609A (en) | 1958-06-14 | ||
| DES71692A DE1114941B (en) | 1958-06-14 | 1958-06-14 | Process for the production of a boron-doped region of monocrystalline semiconductor bodies |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES71692A DE1114941B (en) | 1958-06-14 | 1958-06-14 | Process for the production of a boron-doped region of monocrystalline semiconductor bodies |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1114941B true DE1114941B (en) | 1961-10-12 |
Family
ID=7502642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DES71692A Pending DE1114941B (en) | 1958-06-14 | 1958-06-14 | Process for the production of a boron-doped region of monocrystalline semiconductor bodies |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1114941B (en) |
| NL (1) | NL300609A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1202984B (en) * | 1962-07-12 | 1965-10-14 | Siemens Ag | Process for the production of metal alloys containing boron |
| FR2105175A1 (en) * | 1970-09-02 | 1972-04-28 | Ibm |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE461469C (en) * | 1928-06-21 | Fischer Franz | Bicycle stand | |
| DE840807C (en) * | 1949-06-25 | 1952-06-05 | Karl Baierl | Keyless box lock |
| AT177475B (en) * | 1952-02-07 | 1954-02-10 | Western Electric Co | Process for the production of silicon switching elements of asymmetrical conductivity for signal conversion, in particular rectification |
| AT187556B (en) * | 1954-03-05 | 1956-11-10 | Western Electric Co | Method of manufacturing a semiconductor with a PN connection |
-
0
- NL NL300609A patent/NL300609A/xx unknown
-
1958
- 1958-06-14 DE DES71692A patent/DE1114941B/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE461469C (en) * | 1928-06-21 | Fischer Franz | Bicycle stand | |
| DE840807C (en) * | 1949-06-25 | 1952-06-05 | Karl Baierl | Keyless box lock |
| AT177475B (en) * | 1952-02-07 | 1954-02-10 | Western Electric Co | Process for the production of silicon switching elements of asymmetrical conductivity for signal conversion, in particular rectification |
| AT187556B (en) * | 1954-03-05 | 1956-11-10 | Western Electric Co | Method of manufacturing a semiconductor with a PN connection |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1202984B (en) * | 1962-07-12 | 1965-10-14 | Siemens Ag | Process for the production of metal alloys containing boron |
| FR2105175A1 (en) * | 1970-09-02 | 1972-04-28 | Ibm |
Also Published As
| Publication number | Publication date |
|---|---|
| NL300609A (en) | 1967-06-26 |
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