DE1108825B - Arrangement for measuring the intensity of the electron beam of an electron microscope - Google Patents

Arrangement for measuring the intensity of the electron beam of an electron microscope

Info

Publication number
DE1108825B
DE1108825B DES44527A DES0044527A DE1108825B DE 1108825 B DE1108825 B DE 1108825B DE S44527 A DES44527 A DE S44527A DE S0044527 A DES0044527 A DE S0044527A DE 1108825 B DE1108825 B DE 1108825B
Authority
DE
Germany
Prior art keywords
intensity
measuring
electron
arrangement
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DES44527A
Other languages
German (de)
Inventor
Dr-Ing Hans Koenig
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DES44527A priority Critical patent/DE1108825B/en
Publication of DE1108825B publication Critical patent/DE1108825B/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/22—Optical or photographic arrangements associated with the tube
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24535—Beam current

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Measurement Of Radiation (AREA)

Description

Anordnung zur Messung der Intensität des Elektronenstrahls eines Elektronen-Mikroskops Es ist bekannt, in der Strahlrichtung des Kathodenstrahls einer Kathodenstrahlröhre eine Schicht anzubringen, die durch die auftreffenden Strahlen zum Leuchten gebracht wird und einen ungefähren Anhalt für die Bestrahlungsintensität gibt. Wenn aber ein Elektronenstrahl auf einen zu untersuchenden Körper fällt, welcher sich nicht an dem Schirm der Kathodenröhre befindet, sondern welcher beispielsweise elektronenmikroskopisch untersucht werden soll, dann fehlt es bisher an einem geeigneten Mittel, um die Intensität des Elektronenstrahls zu überwachen, welcher auf den Körper trifft.Arrangement for measuring the intensity of the electron beam of an electron microscope It is known in the direction of the beam of the cathode ray of a cathode ray tube to apply a layer that is made to glow by the incident rays and gives an approximate indication of the radiation intensity. If but an electron beam falls on a body to be examined, which is not on the screen of the cathode tube, but which, for example, electron microscopically is to be investigated, then there is currently no suitable means by which the Monitor the intensity of the electron beam that hits the body.

Es ist schon bekannt, zur Messung des Strahlstromes einen isoliert angebrachten Auffänger anzuwenden, dessen Ableitstrom zur Anode verstärkt und gemessen wird. Auch ist es bekannt, den einfachen Faraday-Käfig durch eine gasgefüllte Entladungsröhre oder einen Sekundär-Elektronen-Veivielfacher mit Lennard-Fenster zu ersetzen. Diese Anordnung hat aber den Nachteil, daß die tatsächliche Strahlintensität, welche das Objekt trifft, nicht zuverlässig gemessen wird, weil man bei den bekannten Anordnungen von der Intensität der Strahlungen an einer stark gebündelten Stelle auf die Strahlung am Objekt schließen muß, wodurch Ungenauigkeiten und Fehler unvermeidlich sind.It is already known to use an isolated one for measuring the beam current attached collector, whose leakage current to the anode is amplified and measured will. It is also known to use the simple Faraday cage by means of a gas-filled discharge tube or to replace a secondary electron multiplier with a Lennard window. These However, the arrangement has the disadvantage that the actual beam intensity which the Object hits, is not measured reliably, because one with the known arrangements the intensity of the radiation at a strongly concentrated point on the radiation must close on the object, whereby inaccuracies and errors are inevitable.

Bei einer Anordnung zur Messung der Intensität des Elektronenstrahls eines Elektronenmikroskops zur Untersuchung eines in den Strahlenweg gebrachten Untersuchungsobjektes ist erfindungsgemäß eine CdS-Schicht oder ein CdS-Kristall im Strahlenweg dicht hinter dem Untersuchungsobjekt oder nahe neben dem Objekt angeordnet. Die CdS-Zelle kann auf einem Träger angeordnet sein, der beispielsweise durch eine Seitenverschiebung oder durch Herunterklappen aus dem Elektronenstrahl entfernt werden kann. Die Verschiebung oder das Herunterklappen kann im Betrieb der Röhre von außen bewirkt werden. Statt dessen kann auch der Elektronenstrahl zur Durchführung einer Intensitätsmessung vorübergehend durch magnetische oder elektrostatische Ablenkung auf die neben dem Untersuchungsobjekt angeordnete CdS-Zelle gelenkt werden.In an arrangement for measuring the intensity of the electron beam an electron microscope to examine a placed in the beam path According to the invention, the object to be examined is a CdS layer or a CdS crystal arranged in the beam path close behind the examination object or close to the object. The CdS cell can be arranged on a carrier, for example by a Removed lateral shift or by folding it down from the electron beam can be. The shifting or folding down can occur during operation of the tube be effected from the outside. Instead, the electron beam can also be used for implementation an intensity measurement temporarily due to magnetic or electrostatic deflection be directed onto the CdS cell arranged next to the examination subject.

Während man die Intensitätsverhältnisse in Elektroneninterferenzbildern bisher auf dem Umweg über die Schwärzungskurve der photographischen Platte ermittelt, sollen durch geschickte Halterung einer für Elektronen empfindlichen CdS-Zelle beim Durchführen der Zelle durch das Interferenzfeld die Intensitäten unmittelbar registriert werden.While looking at the intensity relationships in electron interference images previously determined by detour via the blackening curve of the photographic plate, should be achieved by cleverly holding a CdS cell that is sensitive to electrons Passing the cell through the interference field registers the intensities immediately will.

Claims (3)

PATENTANSPRÜCHE: 1. Anordnung zur Messung der Intensität des Elektronenstrahls eines Elektronen-Mikroskops zur Untersuchung eines in den Strahlenweg gebrachten Untersuchungsobjektes, dadurch gekennzeichnet, daß eine CdS-Schicht oder ein CdS-Kristall im Strahlenweg dicht hinter dem Untersuchungsobjekt oder nahe neben dem Objekt angeordnet ist. PATENT CLAIMS: 1. Arrangement for measuring the intensity of the electron beam of an electron microscope for examining an examination object brought into the beam path, characterized in that a CdS layer or a CdS crystal is arranged in the beam path close behind the examination object or close to the object . 2. Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß die Cadmiumsulfid-Schicht auf einem beweglichen Träger so angebracht ist, daß sie zur Messung in den Kathodenstrahl zu bringen ist. 2. Arrangement according to claim 1, characterized in that that the cadmium sulfide layer is attached to a movable support so that it is to be brought into the cathode ray for measurement. 3. Anordnung nach Anspruch 1, dadurch gekennzeichnet, daß für die Zwecke der Intensitätsmessung der Elektronenstrahl durch magnetische oder elektrostatische Ablenkmittel auf die CdS-Zelle gelenkt ist. In Betracht gezogene Druckschriften: Deutsche Patentschriften Nr. 760 410, 898 208.3. Arrangement according to claim 1, characterized in that for the purpose of measuring the intensity of the electron beam directed onto the CdS cell by magnetic or electrostatic deflection means. Considered publications: German Patent Specifications No. 760 410, 898 208.
DES44527A 1955-06-28 1955-06-28 Arrangement for measuring the intensity of the electron beam of an electron microscope Pending DE1108825B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DES44527A DE1108825B (en) 1955-06-28 1955-06-28 Arrangement for measuring the intensity of the electron beam of an electron microscope

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES44527A DE1108825B (en) 1955-06-28 1955-06-28 Arrangement for measuring the intensity of the electron beam of an electron microscope

Publications (1)

Publication Number Publication Date
DE1108825B true DE1108825B (en) 1961-06-15

Family

ID=7485158

Family Applications (1)

Application Number Title Priority Date Filing Date
DES44527A Pending DE1108825B (en) 1955-06-28 1955-06-28 Arrangement for measuring the intensity of the electron beam of an electron microscope

Country Status (1)

Country Link
DE (1) DE1108825B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1232288B (en) * 1963-09-13 1967-01-12 Siemens Ag Exposure meter for corpuscular beam devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE760410C (en) * 1941-02-11 1953-10-05 Aeg Use of a catcher arranged in a microscope for focusing
DE898208C (en) * 1943-04-06 1953-11-30 Siemens Ag Arrangement for exposure of the photographic layer in electron or ion beam devices

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE760410C (en) * 1941-02-11 1953-10-05 Aeg Use of a catcher arranged in a microscope for focusing
DE898208C (en) * 1943-04-06 1953-11-30 Siemens Ag Arrangement for exposure of the photographic layer in electron or ion beam devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1232288B (en) * 1963-09-13 1967-01-12 Siemens Ag Exposure meter for corpuscular beam devices

Similar Documents

Publication Publication Date Title
Robinson The construction and uses of an efficient backscattered electron detector for scanning electron microscopy
DE1919824A1 (en) Neutron detector
DE1908395A1 (en) Scintillation ion detector
Owe et al. Evaluation of a Compton camera concept using the 3D CdZnTe drift strip detectors
Yudowitch Latex particle size from X‐ray diffraction peaks
DE1130089B (en) Device for searching for deposits of radioactive ores
DE1108825B (en) Arrangement for measuring the intensity of the electron beam of an electron microscope
Van de Graaff et al. Experiments on the Elastic Single Scattering of Electrons by Nuclei
DE1096061B (en) Electron lens
DE102018100131A1 (en) Method for calibrating a high-voltage generator of an X-ray tube in a tube-detector system
Sargent The β-and γ-RAYS of Actinium B and Actinium C ″
Cooke-Yarborough et al. The automatic counting of red blood cells
DE548085C (en) Device to determine the blackening energy of the photographic plate in photographic recordings, in particular X-ray recordings with amplifying film
US2222452A (en) Apparatus for measuring shortwave rays
McCue The Ionization Cross Section of the Silver L III State
Du Mond et al. Energy of K α 3 of Copper as a Function of Applied Voltage with the Double Crystal Spectrometer
DE745332C (en) Device for measuring x-ray or radium rays by means of two ionization chambers
DE19620907A1 (en) Monitor for measuring the radioactivity of an area
CH391122A (en) Device for measuring the energy flow in an X-ray beam
DE679330C (en) Electron microscope, in which substances that emit electrons are shown on a larger scale
DE684518C (en) Differential dosimeter to determine the amount and the ability to penetrate a very short cathode ray surge
DE694687C (en) Method for the detection and determination of foreign substances in gases
DE659355C (en) Arrangement for measuring high voltages using an electron beam tube without baffles
DE387474C (en) Method and device for measuring the dust content of the air
AT250523B (en) Device for registering light intensities