DE1056277B - Method for producing an electrically asymmetrically conductive semiconductor arrangement with alloyed wire electrodes made of aluminum - Google Patents
Method for producing an electrically asymmetrically conductive semiconductor arrangement with alloyed wire electrodes made of aluminumInfo
- Publication number
- DE1056277B DE1056277B DEL29647A DEL0029647A DE1056277B DE 1056277 B DE1056277 B DE 1056277B DE L29647 A DEL29647 A DE L29647A DE L0029647 A DEL0029647 A DE L0029647A DE 1056277 B DE1056277 B DE 1056277B
- Authority
- DE
- Germany
- Prior art keywords
- aluminum
- wire
- producing
- alloyed
- conductive semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 14
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 10
- 229910052782 aluminium Inorganic materials 0.000 title claims description 10
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims description 12
- 239000000956 alloy Substances 0.000 claims description 7
- 229910045601 alloy Inorganic materials 0.000 claims description 7
- 238000005275 alloying Methods 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000000740 bleeding effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Description
In der Halbleitertechnik ist man dazu übergegangen, Kleinflächengleichrichter aber auch Transistoren mit Silizium oder einer dem Silizium entsprechenden halbleitenden Verbindung unter Verwendung von Elektroden aus Aluminiumdraht oder aus Aluminium enthaltendem Draht derart herzustellen, daß man den betreffenden Draht senkrecht zu seiner Achse schnitt und die entstandene Schnittfläche mit der Oberfläche des betreffenden Halbleiterkörpers legierte. Die besondere Schwierigkeit bei diesem Verfahren besteht darin, daß der anlegierte Draht während des Legierungsvorganges auseinanderläuft und somit die Legierungsfläche größer wird als erforderlich oder beabsichtigt. Da zudem die so entstehende Legierungsfläche stets verschieden ausgebildet ist, andererseits aber Form und Größe der Legierungsfläche die technischen Daten der Halbleiteranordnung bestimmen, führte dieses Verlaufen des anlegierten Drahtes zu breiten Streuungen in der Fabrikation. Da zur Herstellung des Legierungskontaktes eine bestimmte Temperatur eingehalten werden mußte, war es auch nicht möglich, diese Schwierigkeit durch Anwendung geringerer Temperaturen zu überwinden. Man hat weiterhin versucht, diesem Mangel durch Verwendung formbegrenzender Körper beizukommen. Aber diese Verwendung von Formen bedingte einen hohen apparativen Aufwand und erleichterte das Einschleppen von unerwünschten Verunreinigungen in die entstehende Legierung.Semiconductor technology has moved on to this, small-area rectifiers but also transistors with silicon or a semiconducting compound corresponding to silicon using Electrodes made of aluminum wire or aluminum-containing wire so that you can relevant wire cut perpendicular to its axis and the resulting intersection with the surface alloyed of the semiconductor body in question. The particular difficulty with this method is in that the alloyed wire diverges during the alloying process and thus the alloy surface becomes larger than necessary or intended. There is also the resulting alloy surface is always designed differently, but on the other hand the shape and size of the alloy surface are technical Determine data of the semiconductor device, this led to running of the alloyed wire wide variations in manufacturing. Since a certain Temperature had to be maintained, it was also not possible to apply this difficulty to overcome lower temperatures. Attempts have continued to make use of this deficiency to deal with shape-limiting bodies. But this use of forms required a great deal outlay in terms of apparatus and facilitated the introduction of undesired impurities into the resulting alloy.
Die Erfindungs bezieht sich somit auf ein Verfahren zum Herstellen einer elektrisch unsymmetrisch leitenden Halbleiteranordnung mit einem Halbleiterkörper aus Silizium oder einer dem Silizium entsprechenden halbleitenden Verbindung, die als Elektroden einen oder mehrere anlegierte Drähte aus Aluminium oder einer aluminiumhaltigen Legierung aufweist. Erfmdungsgemäß unterscheidet sich dieses von den bekannten Verfahren dadurch, daß vor dem Anlegieren der als Elektrode verwendete Draht mindestens an dem dem Halbleiter benachtbarten Ende an seiner Mantelfläche in einem besonderen Arbeitsgang mit einer verstärkten Oxydschicht versehen wird.The invention thus relates to a method for producing an electrically asymmetrical conductive semiconductor arrangement with a semiconductor body made of silicon or a silicon corresponding semiconducting compound that acts as electrodes with one or more alloyed wires made of aluminum or an aluminum-containing alloy. According to the invention this differs from the known processes in that before alloying the wire used as an electrode at least at the end adjacent to the semiconductor at its end The outer surface is provided with a reinforced oxide layer in a special operation.
In weiterer Ausbildung der Erfindung wird eine solche Halbleiteranordnung derart hergestellt, daß der für die Elektrode vorgesehene Draht etwa 5 Stunden lang an Luft oder in Sauerstoff auf einer Temperatur vuii etwa 600 bis 620° C gehalten wird, sodann abgeschnitten und mit der Schnittfläche an den Halbleiter anlegiert wird. Dabei kann die Erhitzung des Drahtes zwecks Ausbildung der Oxydschicht bei höheren Temperaturen als 620° C kürzere Zeit als 5 Stunden dauern oder bei einer niedrigeren Temperatur entsprechend länger.In a further embodiment of the invention, such a semiconductor device is produced in such a way that the wire intended for the electrode for about 5 hours in air or in oxygen at one temperature vuii is maintained about 600 to 620 ° C, then is cut off and alloyed with the cut surface to the semiconductor. This can involve heating of the wire for the purpose of forming the oxide layer at temperatures higher than 620 ° C shorter time than 5 hours or longer if the temperature is lower.
Bei Verwendung eines Drahtes mit einer Oxyd-Verfahren zum HerstellenWhen using a wire with an oxyd process to manufacture
einer elektrisch, unsymmetrisch leitenden Halbleiteranordnung mit anlegierten Drahtelektroden aus Aluminiuman electrically, asymmetrically conductive semiconductor arrangement with an alloyed Wire electrodes made of aluminum
Anmelder:Applicant:
LICENTIA Patent-Verwaltungs -G. m. b.H., Hamburg 36, Hohe Bleichen. 22LICENTIA Patent Administration -G. m. b.H., Hamburg 36, Hohe Bleichen. 22nd
Dr. rer. nat. Siegfried Poganski und Dipl.-Phys. Friedrich Seid,Dr. rer. nat. Siegfried Poganski and Dipl.-Phys. Friedrich Seid,
Rüthen/Möhne, sind als Erfinder genannt wordenRüthen / Möhne have been named as inventors
schicht gemäß der Erfindung ergibt sich der Vorteil, daß die Oxydhaut während des Legierungsvorganges das Verlaufen des flüssigen Aluminiums praktisch verhindert. Zwar reißt die Oxydschicht häufig auf, doch ist die Oberflächenspannung des flüssigen Aluminiums dann noch immer groß, um ein Verlaufen durch die entstandenen Risse zu unterbinden.layer according to the invention there is the advantage that the oxide skin during the alloying process the running of the liquid aluminum is practically prevented. Although the oxide layer often cracks, but the surface tension of the liquid aluminum is still high to prevent bleeding to prevent the resulting cracks.
Der Legierungsvorgang ist dadurch auf eine bestimmte Fläche beschränkt. Der für das Verfahren erforderliche Aufwand ist gering, und das Einschleppen von Verunreinigungen ist weitgehend vermieden. Ferner hat das Verfahren, insbesondere gegenüber der Verwendung von Formen, den Vorteil, daß die Legierungsstelle während des Legierungsvorganges leicht einem die Oxydation unterbindenden Schutzgas, z. B. Wasserstoff, zugänglich ist. Dadurch kann der in der Umgebung der Legierungsstelle zunächst befindliche Luftsauerstoff durch das Schutzgas leicht verdrängt oder weggespült werden, wozu bei der Verwendung von Formen wesentlich mehr Zeit und mehr Schutzgas benötigt wird.The alloying process is limited to a certain area. The one required for the procedure There is little effort and the introduction of impurities is largely avoided. Furthermore, the method, in particular over the use of molds, has the advantage that the Alloying point during the alloying process easily a protective gas that prevents oxidation, z. B. hydrogen is accessible. This allows the initially located in the vicinity of the alloy point Atmospheric oxygen can easily be displaced or flushed away by the protective gas, for which purpose when using molds require significantly more time and more protective gas.
Claims (3)
Britische Patentschrift Nr. 781 061.Considered publications:
British Patent No. 781 061.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL29647A DE1056277B (en) | 1958-02-10 | 1958-02-10 | Method for producing an electrically asymmetrically conductive semiconductor arrangement with alloyed wire electrodes made of aluminum |
| FR1214762D FR1214762A (en) | 1958-02-10 | 1959-02-02 | A method of manufacturing an asymmetric electrically conductive semiconductor device comprising fused aluminum wire electrodes |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DEL29647A DE1056277B (en) | 1958-02-10 | 1958-02-10 | Method for producing an electrically asymmetrically conductive semiconductor arrangement with alloyed wire electrodes made of aluminum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE1056277B true DE1056277B (en) | 1959-04-30 |
Family
ID=7264944
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DEL29647A Pending DE1056277B (en) | 1958-02-10 | 1958-02-10 | Method for producing an electrically asymmetrically conductive semiconductor arrangement with alloyed wire electrodes made of aluminum |
Country Status (2)
| Country | Link |
|---|---|
| DE (1) | DE1056277B (en) |
| FR (1) | FR1214762A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB781061A (en) * | 1952-07-29 | 1957-08-14 | Licentia Gmbh | An arrangement for the cooling of electric unsymmetrically conductive systems with semi-conductive materials |
-
1958
- 1958-02-10 DE DEL29647A patent/DE1056277B/en active Pending
-
1959
- 1959-02-02 FR FR1214762D patent/FR1214762A/en not_active Expired
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB781061A (en) * | 1952-07-29 | 1957-08-14 | Licentia Gmbh | An arrangement for the cooling of electric unsymmetrically conductive systems with semi-conductive materials |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1214762A (en) | 1960-04-12 |
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